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DST3946DPJ-7
Bipolar Transistor Array, Complementary NPN and PNP, 40 V, 40 V, 200 mA, 200 mA, 300 mW
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: DIODES INC.
- Product type: Bipolar Junction Transistor Arrays - BJT
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Product Range: -
- Qualification: -
- Transistor Mounting: Surface Mount
- Transistor Polarity: Complementary NPN and PNP
- Power Dissipation NPN: 300mW
- Power Dissipation PNP: 300mW
- Transistor Case Style: SOT-963
- Transition Frequency NPN: 300MHz
- Transition Frequency PNP: 300MHz
- Operating Temperature Max: 150°C
- DC Current Gain hFE Min NPN: 30hFE
- DC Current Gain hFE Min PNP: 30hFE
- Continuous Collector Current NPN: 200mA
- Continuous Collector Current PNP: 200mA
- Collector Emitter Voltage Max NPN: 40V
- Collector Emitter Voltage Max PNP: 40V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.053 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**DST3946DPJ 40V COMPLEMENTARY NPN/PNP SMALL SIGNAL TRANSISTOR IN SOT963**
## **Features**
## **Mechanical Data**
- BVCEO > 40V
- IC = 200mA Collector Current
- SOT963 Ultra Small Package of 1mm[2] Footprint
- Epitaxial Planar Die Construction
- Ideally Suited for Automated Assembly Processes
- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)**
- **Halogen and Antimony Free. “Green” Device (Note 3)**
- Case: SOT963
- Case Material: Molded Plastic “Green” Molding Compound; UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Finish Matte Tin Plated Leads; Solderable per MIL-STD-202, Method 208 **e3**
- Weight: 0.0027 grams (Approximate)
- **Qualified to AEC-Q101 Standards for High Reliability**
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SOT963<br>6 5 4<br>Q1 Q2<br>1 2 3<br>e o<br>Top View<br>Top View Device Schematic<br>and Pin-Out<br>**----- End of picture text -----**<br>
## **Ordering Information** (Note 4)
|**Product**|**Marking**|**Reel Size(inches)**|**Tape Width(mm)**|**Quantity per Reel**|
|---|---|---|---|---|
|DST3946DPJ-7|T7|7|8|10,000|
|DST3946DPJ-7B|T7|7|8|10,000|
- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/ quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
## **Marking Information**
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T7 T7 = Product Type Marking Code<br>**----- End of picture text -----**<br>
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## **Absolute Maximum Ratings - NPN (Q1)** (@TA = +25°C, unless otherwise specified.)
|**Absolute Maximum Ratings - NPN (Q1)gs - NPN (Q1)s - NPN (Q1)(Q1)Q1))**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Collector-Base Voltage|VCBO|60|V|
|Collector-Emitter Voltage|VCEO|40|V|
|Emitter-Base Voltage|VEBO|6.0|V|
|Collector Current|IC|200|mA|
## **Absolute Maximum Ratings - PNP (Q2)** (@TA = +25°C, unless otherwise specified.)
|**Absolute Maximum Ratings - PNP (Q2)gs - PNP (Q2)s - PNP (Q2)(Q2)Q2))**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Collector-Base Voltage|VCBO|-40|V|
|Collector-Emitter Voltage|VCEO|-40|V|
|Emitter-Base Voltage|VEBO|-5.0|V|
|Collector Current|IC|-200|mA|
## **Thermal Characteristics**
|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Power Dissipation(Note 5)|PD|300|mW|
|Thermal Resistance,Junction to Ambient(Note 5)|RJA|417|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C|
Note: 5. Device mounted on FR-4 PCB with minimum recommended pad layout.
## **ESD Rating** (Note 6)
|**ESD Ratingg **(Note 6)|**ESD Ratingg **(Note 6)|**ESD Ratingg **(Note 6)|**ESD Ratingg **(Note 6)|**ESD Ratingg **(Note 6)|
|---|---|---|---|---|
||||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|**JEDEC Class**|
|ElectrostaticDischarge- Human BodyModel|ESD HBM|4,000|V|3A|
|ElectrostaticDischarge- MachineModel|ESD MM|200|V|B|
Note: 6. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
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## LIES.'nm CO R PORATED
## **Thermal Characteristics and Derating Information**
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1 aas SS Esl SE EE) Se nn eneniil<br>ee D = 0.7 rr<br>HHT D = 0.5 ITT<br>D = 0.3 CEE ein Cae ee eee!<br>lll PTT PTT NP<br>0.1 PAIEH D = 0.1 0 EAMeer8 OkTIE [A] 0CELINEETN TH<br>a 0 ca a Oo cl 0 | PPP<br>ee oe A D = 0.9 RJA(t) = r(t) * RJA LET<br>FA D = 0.05 PITH fT Py R JA = 370 °C /W LT TTT<br>PT HI AE EE PT mail<br>er AIT ETT ETE ETT LTT<br>D = 0.02 P(pk)<br>LY t1<br>0.01 LoeeeEea D = 0.005D = 0.01 esOT AUW 8oe oe DutTJ - Ty ++] CAy = P tcle2 , D = t * RJA1/t(t)2 errorceaTTTTT TTT<br>FeTTo LT TTT<br>ST TN A TT<br>D = Single Pulse<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (s)<br>Fig. 1 Transient Thermal Response<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>
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1,000<br>LOTTIELOTTIE|TIE TTT TTTTITTIME TT<br>Single Pulse<br>100 jaCoitSHPom [A] [0] NtTITATTTTTATTTI TTI CTT, TIE, R RJAJA TTI, (t) = 370°C/W = r(t) PTT °C * R JA TTTHitCnty|il<br>Seo Aon Cn<br>COTTEa TN TJ - TA = P * RJA(t) Ci{fl<br>HATING CAE Duty Cycle, D = t1/t2 il<br>10 ee<br>ReetcePTIiETeectTTIeect CattNTT aaTTT tatCIPIeT eetThTT maaTTT<br>EE<br>Ek<br>1 ACeSUTaesa TACcsoT60hes enaTT| seaTTIih see|ETTsee TT<br>COPTIC<br>LOTTI [TI] TTI TI TTTrETTT TSS teeTT<br>0.1<br>0.00001 0.001 0.1 10 1,000<br>t1, PULSE DURATION TIME (s)<br>Fig. 2 Single Pulse Maximum Power Dissipation<br>P(pk), PEAK TRANSIENT POWER (W)<br>**----- End of picture text -----**<br>
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0.4<br>0.3<br>0.2<br>0.1<br>0<br>0 20 40 60 80 100 120 140 160<br>TA, AMBIENT TEMPERATURE (C)<br>Fig. 3 Power Dissipation vs. Ambient Temperature<br>D<br>, POWER DISSIPATION (W)<br>P<br>**----- End of picture text -----**<br>
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**Electrical Characteristics - NPN (Q1)** (@TA = +25°C, unless otherwise specified.)
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||||||||||
|---|---|---|---|---|---|---|---|---|
|Characteristic|Symbol|Min|Max|Unit|Test Condition|
|eG|OFF CHARACTERISTICS (Note 7)|C(O|
|po|Collector-Base Breakdown Voltage|BVCBO|60||V|IC = 10µA, IE = 0|
|pf|Collector-Emitter Breakdown Voltage (Note 7)|BVCEO|40||V|IC = 1.0mA, IB = 0|
|pf|Emitter-Base Breakdown Voltage|BVEBO|6.0||V|IE = 10µA, IC = 0|
|pf|Collector Cutoff Current|ICEX||50|nA|VCE = 30V, VEB(OFF) = 3.0V|
|po|Base Cutoff Current|IBL||50|nA|VCE = 30V, VEB(OFF) = 3.0V|
|ON CHARACTERISTICS (Note 7)|
|40||IC = 100µA, VCE = 1.0V|
|70||IC = 1.0mA, VCE = 1.0V|
|DC Current Gain|hFE|100|300||IC = 10mA, VCE = 1.0V|
|60||IC = 50mA, VCE = 1.0V|
|30||IC = 100mA, VCE = 1.0V|
|SO|Collector-Emitter Saturation Voltage|VCE(SAT)||0.20 0.30|V|IIC C = 50mA= 10mA, I, IBB = 1.0mA = 5.0mA|
|0.65|0.85|IC = 10mA, IB = 1.0mA|
|ee|Base-Emitter Saturation Voltage|VBE(SAT)||0.95|V|IC = 50mA, IB = 5.0mA|
|SMALL SIGNAL CHARACTERISTICS|
|apo|OutInput Caput Capacitance pacitance|CCOBOIBO|GO||4.0 8.5|GO|ppF F|VVCBEB = 0.5V = 5.0V,, f = 1.0MHz f = 1.0MHz,, I ICE = 0 = 0|
|a|Input Impedance|hIE|1.0|10|kΩ|
|Voltage Feedback Ratio|hRE|0.5|8.0|x 10|[-4]|VCE = 10V, IC = 1.0mA,|
|pf|Small Signal Current Gain|hFE|100|400||f = 1.0kHz|
|rrpo|Output Admittance|hOE|1.0|40|µs|
|Current Gain-Bandwidth Product|fT|300||MHz|Vf = 1CE = 20V, I00MHz C = 10mA,|
|ee|SWITCHING CHARACTERISTICS|
|Delay Time|tD||35|ns|VCC = 3.0V, IC = 10mA,|
|Sna|Rise Time|tR||Gn|35|ns|VBE(OFF) = - 0.5V, IB1 = 1.0mA|
|Storage Time|tS||200|ns|VCC = 3.0V, IC = 10mA,|
|aSS|Fall Time|tF||50|ns|IB1 = -IB2 = 1.0mA|ee|
|GC|
|Note:|7. Short duration pulse test used to minimize self-heating effect.|
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0.14 400<br>IB = 2mA<br>IB = 1.8mA V CE = 5V<br>0.12 I B = 1.6mA TA = 150°C°C<br>IB = 1.4mA<br>TTT IB = 1.2mA 300 Sn<br>0.10 IB = 1mA ~esssE TA = 125 °C<br>TA = 85°C°C<br>0.08 Bese Hh eNtl<br>IB = 0.8mA<br>IB = 0.6mA 200 TA = 25 °C<br>0.06 Bee= Huo<br>IB = 0.4mA<br>0.04 gas Hn<br>100 TA = -55°C°C<br>——= IB = 0.2mA =<br>0.02<br>0 aPT eT) 0 A<br>0 1 2 3 4 5 0.1 1 10 100 1,000<br>VCE, COLLECTOR-EMITTER VOLTAGE (V) TT ) SS IC, COLLECTOR CURRENT (mA)<br>Fig. 4 Typical Collector Current Fig. 5 Typical DC Current Gain vs. Collector Current<br>vs. Collector-Emitter Voltage<br>, COLLECTOR CURRENT (A)<br>IC<br>, DC CURRENT GAIN<br>FE<br>h<br>**----- End of picture text -----**<br>
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## (Mae wie OMA Se ee
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1 fot TT TTT TTT) 1 a Oe OO |<br>EEE ||<br>IC/IB = 10 IC/IB = 20<br>sii itd gt i nt a<br>y/ TA = 150°C°C A<br>0.1 T A = 150°C°C 0.1 T A = 125°°CC<br>CHAIa a TA = 125 °C Oo AH ————— = CH jez BAy o KY TA = 85°°CC HH<br>SoSS SSS TA = 25°C T A = 85°C °C °C maniill aon TA = -55°C ee °C TA = 25 ° C emeniil<br>TA = -55 °C<br>Cor Con cron<br>0.01 0.01<br>0.1 1 10 100 1,000 0.1 1 10 100 1,000<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Fig. 6 Typical Collector-Emitter Saturation Voltage Fig. 7 Typical Collector-Emitter Saturation Voltage<br>vs. Collector Current vs. Collector Current<br>1.1 1.2<br>Gain = 10<br>1.0 VCE = 5V<br>1.0<br>0.9<br>iia<br>0.8 a T A = -55 °C amaAAmllpgy 0.8 T as A = -55 °C igs ils<br>0.7 Ns ZA TT BA<br>He TA = 25 °C 0.6 e TA = 25 °C e ill<br>0.6<br>eer noe II srt lezcil TA = 150°C°C<br>0.5 Tiler)Le 11 TA = 125 °C T A = 150 °C 0.4 LRwee TA = 85 °C TA = 125 °C<br>0.4 HT T A = 85 °C Till raw ae<br>0.3 0.2<br>0.1 TTzai 1 iiull 10 LIE 100 TA 1,000 0.1 TTT 1 10 AI 100 1,000<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Fig. 8 Typical Base-Emitter Turn-On Voltage Fig. 9 Typical Base-Emitter Saturation Voltage<br>vs. Collector Current vs. Collector Current<br>10<br>TA = 25°°CC Single,<br>Non-Repetitive Pulse<br>Sti |<br>| tT Ty ll<br>1 |<br>aneee ee eee<br>NON PW = 1ms<br>DC<br>P W = 100µss<br>0.1 mnan PW = 100ms TaeZSAxSHH<br>re PW = 10ms fT NNN<br>Fee,<br>0.01 N<br>se Eo SEE<br>——PERaeoeel<br>| TT<br>| Er<br>0.0010.1 ee 1 10 ll 100<br>VCE, COLLECTOR EMITTER CURRENT (V)<br>Fig. 10 Safe Operation Area (NPN)<br>, BASE-EMITTER SATURATION VOLTAGE (V)<br>BE(SAT)<br>V<br>BE(ON)<br>, BASE-EMITTER TURN-ON VOLTAGE (V)<br>V<br>VOLTAGE (V)<br>, COLLECTOR-EMITTER<br>SATURATION<br>CE(SAT)<br>V<br>CE(SAT)<br>VOLTAGE (V)<br>, COLLECTOR-EMITTER<br>SATURATION<br>V<br>, COLLECTOR CURRENT (A)<br>IC<br>**----- End of picture text -----**<br>
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**Electrical Characteristics - PNP (Q2)** (@TA = +25°C, unless otherwise specified.)
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|||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|a|Characteristic|Symbol|Min|Max|(|Unit|Test Condition|
|OFF CHARACTERISTICS|
|Ce|Collector-Base Breakdown Voltage|BVCBO|-40||V|IC = -10µA, IE = 0|
|Ce|Collector-Emitter Breakdown Voltage (Note 8)|BVCEO|-40||V|IC = -1.0mA, IB = 0|
|GO|Emitter-Base Breakdown Voltage|BVEBO|-5.0||V|IE = -10µA, IC = 0|
|Collector Cutoff Current|ICEX||-50|nA|VCE = -30V, VEB(OFF) = -3.0V|
|——————————————Eee|ICBO||ee|-50|en|nA|VCE = -30V, IE = 0|
|GO|Base Cutoff Current|IBL||(|-50|nA|VCE = -30V, VEB(OFF) = -3.0V|
|ON CHARACTERISTICS (Note 8)|
|60||IC = -100µA, VCE = -1.0V|
|80||IC = -1.0mA, VCE = -1.0V|
|DC Current Gain|hFE|100|300||IC = -10mA, VCE = -1.0V|
|60||IC = -50mA, VCE = -1.0V|
|30||IC = -100mA, VCE = -1.0V|
|PO|Collector-Emitter Saturation Voltage|VCE(SAT)||-0.25 -0.40|V|IIC C = -50mA= -10mA, I, IBB = -1.0mA = -5.0mA|
|-0.65|-0.85|IC = -10mA, IB = -1.0mA|
|eee|Base-Emitter Saturation Voltage|VBE(SAT)||-0.95|V|IC = -50mA, IB = -5.0mA|
|SMALL SIGNAL CHARACTERISTICS|
|GO|Output Capacitance|COBO||4.5|pF|VCB = -5.0V, f = 1.0MHz, IE = 0|
|Re|Input Capacitance|CIBO|(||(QO(|10|pF|(|VEB = -0.5V|OO|, f = 1.0MHz, IC = 0|
|I|Input Impedance|hIE|2.0|12|kΩ|
|Voltage Feedback Ratio|hRE|0.1|10|x 10|[-4]|VCE = -10V, IC = -1.0mA,|
|a|Small Signal Current Gain|hFE|100|400||f = 1.0kHz|
|aee|Output Admittance|hOE|3.0|(|60|s|
|Current Gain-Bandwidth Product|fT|300||MHz|Vf = 100MHz CE = -20V, IC = -10mA,|
|a|SWITCHING CHARACTERISTICS|
|Delay Time|tD||35|ns|VCC = -3.0V, IC = -10mA,|
|NNa|Rise Time|tR||35|ns|VBE(OFF) = 0.5V, I|ee|B1 = -1.0mA|
|Storage Time|tS||225|ns|VCC = -3.0V, IC = -10mA,|
|SSa|Fall Time|GD|tF|I||75|Hr|ns|IB1 = -IB2 = -1.0mA|—E|
|Note:|8. Short duration pulse test used to minimize self-heating effect.|
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0.20 400<br>IB = -2mA<br>0.16 I B = -1.4mA IB = -1.6mA IB = -1.8mA 350 TA = 150 °C VCE = 5V<br>; 300 ET<br>IB = -1.2mA es Pr TA = 125°C°C ll<br>250<br>0.12 —<—_——— inst TA an = 85°C°C NU<br>IB = -1mA<br>200<br>IB = -0.8mA<br>0.08 C-—_——— IB = -0.6mA 150 SS TA = 25°C°C<br>y——— CTTSSN<br>IB = -0.4mA 100<br>0.04 ————— BA TA = -55°C°C<br>IB = -0.2mA 50<br>0 -——na 0 BFCCITT(AR NETT<br>0 1 2 3 4 5 0.1 1 10 100 1,000<br>-VCE, COLLECTOR-EMITTER VOLTAGE (V) -IC, COLLECTOR CURRENT (mA)<br>Fig. 11 Typical Collector Current Fig. 12 Typical DC Current Gain vs. Collector Current<br>vs. Collector-Emitter Voltage<br>, DC CURRENT GAIN<br>FE<br>, COLLECTOR CURRENT (A) h<br>-I<br>C<br>**----- End of picture text -----**<br>
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1 1<br>I C /I B = 10 IC/IB = 20<br>a ee Sl te EHH HHH ytTTT<br>ee eee _ ee<br>ee |<br>ee! A A<br>0.1 TnTT T A = 125 T ° ° C AC = 150°C SAAPTI ° C yy Wi Y TTT) 0.1 IOE TA = 125 ° T C A = 150°C°C Yf Y Yy A<br>T A = 85 °C T A = 85 °C<br>eeee Aaa T a A = 25 °C l ==SSS———— es T A = 25°° C PET<br>TA = -55 °C TA = -55°C °C<br>Se tit oi 1<br>0.01 0.01<br>1 10 100 1,000 0.1 1 10 100 1,000<br>-IC, COLLECTOR CURRENT (mA) -IC, COLLECTOR CURRENT (mA)<br>Fig. 13 Typical Collector-Emitter Saturation Voltage Fig. 14 Typical Collector-Emitter Saturation Voltage<br>vs. Collector Current vs. Collector Current<br>1.2 1.2<br>Gain = 10 Gain = 10<br>1.0 INE en |AIM ETaadTl 1.0 a Ely i<br>0.8 T A = -55°C°C 0.8 T A = -55°C°C<br>ee co Y<br>0.6 CNel TA = 25 °C ler <, 0.6 _—- asses TA = 25°C°C Hl “Ogaul<br>III Pe zai<br>aa T A = 150°°CC ice TA = 150°C°C<br>we = mill pe.<br>0.4 STARA TA = 125 °C 1 TM 0.4 Ee TA = 125°C°C<br>oe TA = 85 °C TA = 85 °C<br>0.2 0.2<br>0.1 1 10 100 1,000 0.1 1 10 100 1,000<br>-IC, COLLECTOR CURRENT (mA) -IC, COLLECTOR CURRENT (mA)<br>Fig. 15 Typical Base-Emitter Saturation Voltage Fig. 16 Typical Base-Emitter Saturation Voltage<br>vs. Collector Current vs. Collector Current<br>10 TA = 25°°CC Single,<br>Non-Repetitive Pulse<br>a a a {||<br>a|<br>1 I<br>PW = 1ms<br>ORTON DC PW = 100µ s a<br>|| HNN NTH<br>PW = 100ms<br>0.1 NT<br>|<br>FSH——— PW = 10ms ZSEPRRESSESE EENoENREEHHEHH<br>|_| FTEEENTINT<br>0.01 PT<br>eea ee eee pee one eee eeeNE]een Enea<br>a a a OS Oe CG OO OO OO<br>es [a] SG eeOOOOOO<br>a aee<br>0.001 el<br>0.1 1 10 100<br>-VCE, COLLECTOR EMITTER CURRENT (V)<br>Fig. 17 Safe Operation Area (PNP)<br>, BASE-EMITTER SATURATION VOLTAGE (V)<br>BE(SAT)<br>-V<br>, BASE-EMITTER TURN-ON VOLTAGE (V)<br>BE(ON)<br>-V<br>VOLTAGE (V) VOLTAGE (V)<br>, COLLECTOR-EMITTER , COLLECTOR-EMITTER<br>CE(SAT) SATURATION CE(SAT) SATURATION<br>-V -V<br>, COLLECTOR CURRENT (A)<br>C<br>-I<br>**----- End of picture text -----**<br>
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## **Package Outline Dimensions**
Please see http://www.diodes.com/package-outlines.html for the latest version.
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SOT963<br>D<br>L1<br>e1<br>SOT963<br>Dim Min Max Typ<br>E1 E A 0.40 0.50 0.45<br>A1 0.00 0.05 --<br>b 0.10 0.20 0.15<br>c 0.120 0.180 0.150<br>D 0.95 1.05 1.00<br>b e e UL c E 0.95 1.05 1.00<br>b E1 0.75 0.85 0.80<br>e -- -- 0.35<br>e1 -- -- 0.70<br>==== L1 0.05 0.15 0.10<br>All Dimensions in mm<br>A1<br>A<br>Seating plane<br>**----- End of picture text -----**<br>
## **Suggested Pad Layout**
Please see http://www.diodes.com/package-outlines.html for the latest version.
**==> picture [327 x 163] intentionally omitted <==**
**----- Start of picture text -----**<br>
SOT963<br>C<br>Value<br>Dimensions<br>(in mm)<br>C 0.350<br>Y1<br>X 0.200<br>Y 0.200<br>p ad _ Y1 1.100<br>Y<br>X<br>**----- End of picture text -----**<br>
8 of 9 **www.diodes.com**
DST3946DPJ Document number: DS32044 Rev. 3 - 2
March 2016 © Diodes Incorporated
**DST3946DPJ**
## **IMPORTANT NOTICE**
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.
## **LIFE SUPPORT**
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
- A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user.
- B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
**www.diodes.com**
9 of 9 **www.diodes.com**
DST3946DPJ Document number: DS32044 Rev. 3 - 2
March 2016 © Diodes Incorporated
Updated at March 26, 2026
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