DSS5540X-13

**DSS5540X** Cid **40V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR** 

## **Features** 

## **Mechanical Data** 

- BVCEO > -40V 

- IC = -4A Continuous Collector Current 

- Ultra-Low Collector-Emitter Saturation Voltage 

- Ideally Suited for Automated Assembly Processes 

- Ideal for Medium Power Switching or Amplification Applications 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

   - Package: SOT89 

   - Package Material: Molded Plastic. "Green” Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminals: Finish — Matte Tin Plates Leads. Solderable per MIL-STD-202, Method 208 

   - Weight: 0.055 grams (Approximate) 

- **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q101, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative.** 

**https://www.diodes.com/quality/product-definitions/** 

|||C|C||||||||
|---|---|---|---|---|---|---|---|---|---|---|
|SOT89<br>e|B<br>|E<br> ~~©~~||C<br>C<br>B<br>E<br> &|||||||
|Top View||Device Schematic|||Pin-Out Top||||||
|**Ordering Information** (Note 4)|||||||||||
||||||||||||
|**Product**<br>**Marking**||**Reel size(inches)**||**Tape width(mm)**||||||**Quantity per reel**|
|DSS5540X-13<br>ZPS54||13||12mm||||||2500|
|DSS5540XTC<br>ZPS54||13||12mm||||||4000|



## **Ordering Information** (Note 4) 

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

**==> picture [44 x 21] intentionally omitted <==**

**----- Start of picture text -----**<br>
YWW<br>ZPS54<br>**----- End of picture text -----**<br>


ZPS54 = Product Type Marking Code = Manufacturer’s Code Marking YWW = Date Code Marking Y = Last digit of year (ex: 2 = 2022) WW = Week code (01 – 53) 

1 of 7 **www.diodes.com** 

DSS5540X Document number: DS31653 Rev. 4 - 2 

January 2022 © Diodes Incorporated 

**DSS5540X** 

## **Absolute Maximum Ratings** @ TA = 25°C unless otherwise specified 

|**Absolute Maximum Ratingsgss** @ TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|@ TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Collector-Base Voltage|VCBO|-40|V|
|Collector-Emitter Voltage|VCEO|-40|V|
|Emitter-Base Voltage|VEBO|-6|V|
|Peak Pulse Collector Current|ICM|-10|A|
|Repetitive Peak Pulse Collector Current (Note 5)|ICRP|-5|A|
|Continuous Collector Current|IC|-4|A|
|Peak Pulse Base Current|IBM|-2|A|
|Continuous Base Current|IB|-1|A|



## **Thermal Characteristics** 

|**Thermal Characteristics**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Power Dissipation(Note 6)@ TA= 25°C|PD|0.9|W|
|Thermal Resistance, Junction to Ambient Air(Note 6)@ TA= 25°C|RJA|139|°C/W|
|Power Dissipation(Note 7)@ TA= 25°C|PD|2|W|
|Thermal Resistance, Junction to Ambient Air(Note 7)@ TA= 25°C|RJA|62.5|°C/W|
|Thermal Resistance, Junction to Case(Note 6)@ TA= 25°C|RJC|17|°C/W|
|Operatingand Storage Temperature Range|TJ, TSTG|-55 to +150|°C|



- Notes: 5. Pulse width ≤ 10ms; Duty cycle ≤ 0.2 

6. For a device mounted on FR-4 PCB with minimum recommended pad layout. 

7. For a device mounted on FR-4 PCB with 1inch[2] copper pad layout. 

2 of 7 **www.diodes.com** 

DSS5540X Document number: DS31653 Rev. 4 - 2 

January 2022 © Diodes Incorporated 

**DSS5540X** 

## **Thermal Characteristics and Derating Information** 

**==> picture [196 x 194] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.4<br>2.0<br>1.6<br>1.2 Note 7 Note 6<br>0.8<br>Note 5<br>0.4 Note 6<br>0<br>0 50 100 150 200<br>TA, AMBIENT TEMPERATURE (C)<br>Fig. 1 Power Dissipation vs. Ambient Temperature<br>, POWER DISSIPATION (W)<br>D<br>P<br>**----- End of picture text -----**<br>


**==> picture [391 x 203] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>EE D = 0.7<br>D = 0.5 A<br>ge [a][ an] ear ett Et<br>D = 0.3 Tt<br>PAI TIE EE ge |I<br>eee<br>0.1<br>EO D = 0.1 Lo [AS] eTalll ENA<br>Seether<br>aa D = 0.9 eee el<br>D = 0.05<br>TF er<br>RJA(t) = r(t) * RJA<br>D = 0.02 RJA = 135°C/W<br>ered 1NATIT oe?ARR ALTO| LEAHY<br>0.01<br>D = 0.01 P(pk)<br>eeeREPS 6 Camere ee mreSSeenee ee t1 etEHH<br>D = 0.005 t2<br>FtA eI2 T J  - T +#——>| A  = P * R JA (t) fTlllTT<br>Duty Cycle, D = t1/t2<br>D = Single Pulse<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 10,000<br>t1, PULSE DURATION TIME (s)<br>Fig. 2 Transient Thermal Response<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


3 of 7 **www.diodes.com** 

DSS5540X Document number: DS31653 Rev. 4 - 2 

January 2022 © Diodes Incorporated 

**DSS5540X** 

**Electrical Characteristics** (@ TA = 25°C unless otherwise specified) 

**==> picture [518 x 381] intentionally omitted <==**

**----- Start of picture text -----**<br>
||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|GO|Characteristic|Symbol|Min|Typ|Max|Unit|Test Conditions|
|a|Collector-Base Breakdown Voltage|BVCBO|GC|-40|GQ|||GOG(R|V|IC = -100A|
|po|Collector-Emitter Breakdown Voltage (Note 8)|BVCEO|-40|||V|IC = -10mA|
|CO|Emitter-Base Breakdown Voltage|BVEBO|-6|||V|IE = -100A|
|||-100|nA|VCB = -30V, IE = 0|
|Collector-Base Cutoff Current|ICBO|
|||-50|A|VCB = -30V, IE = 0, TA = 150°C|
|eea|Emitter-Base Cutoff Current|ee|IEBO|GCee||ee||eeGY|-100|GO(O|nA|VEB = -5V, I|ee|C = 0|
|a|250|||ee|VCE = -2V, IC = -0.5A|
|DC Current Gain (Note 8)|hFE|a|200|350|||VCE = -2V, IC = -1A|
|a|150|||ee|VCE = -2V, IC = -2A|
|a|50|||VCE = -2V, IC = -5A|
|a|||-120|ee|IC = -0.5A, IB = -5mA|
|a|||-170|IC = -1A, IB = -10mA|
|Collector-Emitter Saturation Voltage (Note 8)|VCE(sat)|a||-70|-160|mV|ee|IC = -2A, IB = -200mA|
|ai||-165|-340|IC = -4A, IB = -200mA|
|GC|Equivalent On-Resistance|RCE(sat)|a||-150-30|a||-375 -1.1 -75|GO|m|IIICCC = -5A, I = -5A, I = -4A, IBBB = -500mA  = -500mA  = -200mA|
|ee|Base-Emitter Saturation Voltage|VBE(sat)|||-1.2|V|IC = -5A, IB = -500mA|
|pT|Base-Emitter Turn-on Voltage|ee|VBE(on)|ee|||ee|-1.0|V|VCE|eee|= -2V, IC = -2A|
|GCpo|Transition FreCollector Capacitance quency|CfTc|60 ||105 |GO|MHz pF|VVCECB = -10V, I = -10V, ICE = 0A, f = 1MHz  = -0.1A, f = 100MHz|
|GG|Turn-On Time|ton||63||ns|
|eG|Delay Time|td||15||ns|
|GG|Rise Time|tr||48||ns|VCC = -10V, IC = -2A,|
|a|Turn-Off Time|toff||280||ns|IB1 = -IB2 = -200mA|
|eG|Storage Time|ts||232||ns|
|es|Fall Time|tf||48||ns|
|Notes:|8. Measured under pulsed conditions.  Pulse width = 300s.  Duty cycle 2%.|

**----- End of picture text -----**<br>


4 of 7 **www.diodes.com** 

DSS5540X Document number: DS31653 Rev. 4 - 2 

January 2022 © Diodes Incorporated 

**DSS5540X** 

**Typical Electrical Characteristics** (@ TA = 25°C unless otherwise specified) 

**==> picture [486 x 653] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.2 1,000<br>2.0<br>V CE  = -1V<br>1.8 ee ee ee ee ee 800 So ee<br>1.6 eea a TA = 150°C |<br>IB  = -5mA — Se<br>1.4 om i tT 600 SBE T A  = 125 iy °C LAME LETTE TM<br>1.2 IB = -4mA TA = 85°C<br>1.0<br>0.8 ttt| IB = -3mA | 400 eeCOON TA = 25°C STCl<br>0.6 —————— I B  = -2mA CTS TT<br>0.4 | 200 ci TA  = -55°C TTS Tl<br>IB = -1mA<br>0.2 ce A<br>00 Poo 1 2 3 4 5 0.0010 P clETIT 0.01 TITTIESTTITIE 0.1 EEE 1 UT 10<br>-VCE , COLLECTOR-EMITTER VOLTAGE (V) -IC, COLLECTOR CURRENT (A)<br>Fig. 3 Typical Collector Current vs. Collector-Emitter Voltage Fig. 4 Typical DC Current Gain vs. Collector Current<br>1 1.0<br>I C /I B  = 10 VCE = -2V<br>=Chimei coatti mati mail 0.8 serrata“HALEanemalt502ira [Lom] LH_| 1)<br>0.1 ai TA = -55°C<br>| 0.6 rm<br>T A  = 150°C TA = 25°C<br>TEU TA = 125°C aC 0.4 = a egies MAMI<br>0.01 CO LAT TA  = 85°C rier<br>T A  = 25°C TA = 85°C<br>T A  = -55°C 0.2 TA = 125°C<br>CE oo - TA = 150°C AMT A<br>0.001 TTT TITIAN 0 PLT TTT<br>0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10<br>-IC, COLLECTOR CURRENT (A) - I CC, COLLECTOR CURRENT (A)<br>Fig. 5 Typical Collector-Emitter Saturation Voltage Fig. 6 Typical Base-Emitter Turn-On Voltage<br>vs. Collector Current vs. Collector Current<br>1.2 1,000 OO sn bli f = 1MHz bin<br>1.0 a I C /I B  = 10 a a ee [TTT<br>ae =<br>0.8 SHE ILcall |OSre TToo<br>Cibo<br>Ut ACA LTEPANU Th<br>TA = -55°C<br>0.6 Se Ts 100 a<br>Le)a eval pees a ee<br>TA = 25°C | FREESE C obo<br>0.4 Tuatha T A  = 85°C ee<br>wits ON<br>TA = 125°C<br>polis i<br>0.2 T A  = 150°C<br>0 6 NN 10 Con coo<br>0.0001 0.001 0.01 0.1 1 10 0.1 1 10 100<br>I-ICC, COLLECTOR CURRENT (A) VR, REVERSE VOLTAGE (V)<br>Fig. 7 Typical Base-Emitter Saturation Voltage  Fig. 8 Typical Capacitance Characteristics<br>vs. Collector Current<br>C<br>, COLLECTOR CURRENT (A)<br>-I<br>, COLLECTOR-EMITTER<br>SATURATION VOLTAGE (V)<br>-V<br>CE(SAT)<br>FE<br>, DC CURRENT GAIN<br>h<br>CAPACITANCE (pF)<br>BE(ON)<br>-<br>BE(SAT)<br>-V<br>BE(ON)<br>, BASE-EMITTER TURN-ON VOLTAGE (V)<br>V<br>, BASE-EMITTER SATURATION VOLTAGE (V)<br>V<br>BE(SAT)<br>**----- End of picture text -----**<br>


5 of 7 **www.diodes.com** 

DSS5540X Document number: DS31653 Rev. 4 - 2 

January 2022 © Diodes Incorporated 

**DSS5540X** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **SOT89** 

**==> picture [431 x 256] intentionally omitted <==**

**----- Start of picture text -----**<br>
D1<br>c<br>pt =<br>SOT89<br>- H Dim  Min  Max  Typ<br>E A  1.40 1.60 1.50<br>B  0.50 0.62  0.56<br>B1  0.42  0.54  0.48<br>c 0.35 0.43 0.38<br>B1 L D  4.40 4.60 4.50<br>B D1  1.62  1.83 1.733<br>e D2  1.61  1.81  1.71<br>D2 E  2.40 2.60 2.50<br>TOP VIEW<br>E2  2.05 2.35 2.20<br>e -  -  1.50<br>H  3.95 4.25 4.10<br>H1  2.63 2.93 2.78<br>H1<br>E2 L  0.90 1.20 1.05<br>A L1  0.327  0.527  0.427<br>z  0.20 0.40 0.30<br>L1 All Dimensions in mm<br>raat D — z | ————a<br>BOTTOM VIEW<br>8° (4X)<br>R0.200<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**SOT89** 

**==> picture [350 x 153] intentionally omitted <==**

**----- Start of picture text -----**<br>
X2<br>Value<br>Dimensions<br>(in mm)<br>Y3 C  1.500<br>Y1 G  0.244<br>X  0.580<br>Y4 X G X1  0.760<br>X2  1.933<br>Y  1.730<br>Y Y2 Y1  3.030<br>Y2  1.500<br>f. — Ee Y3  0.770<br>it X1 t Y4  4.530<br>C<br>**----- End of picture text -----**<br>


6 of 7 **www.diodes.com** 

DSS5540X Document number: DS31653 Rev. 4 - 2 

January 2022 © Diodes Incorporated 

**DSS5540X** 

## **IMPORTANT NOTICE** 

1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 

3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and liabilities. 

4. Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties whose products and services may be described in this document or on Diodes’ website) under this document. 

5. Diodes products are provided subject to Diodes’ Standard Terms and Conditions of Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/) or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 

6. Diodes products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is prohibited under any applicable laws and regulations. Should customers or users use Diodes products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. 

7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. 

8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use. 

Copyright © 2022 Diodes Incorporated 

**www.diodes.com** 

7 of 7 **www.diodes.com** 

DSS5540X Document number: DS31653 Rev. 4 - 2 

January 2022 © Diodes Incorporated