DSS5320T-7

**DSS5320T** Sy. **20V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR** — 

## **Features** 

- Epitaxial Planar Die Construction 

- Ideal for Medium Power Amplification and Switching 

- **“Lead Free”, RoHS Compliant (Note 1)** 

- **Halogen and Antimony Free. "Green" Device (Note 2)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Mechanical Data** 

- Case: SOT-23 

- Case Material: Molded Plastic, "Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Finish — Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 

- Weight: 0.008 grams (approximate) 

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C<br>SOT-23  C<br>B<br>B E<br>E<br>Top View  Device Symbol Pin-Out Top<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 3) 

|**Ordering Informationg Information Information** (Note 3)|**Ordering Informationg Information Information** (Note 3)|**Ordering Informationg Information Information** (Note 3)|**Ordering Informationg Information Information** (Note 3)|**Ordering Informationg Information Information** (Note 3)|
|---|---|---|---|---|
||||||
|**Product**|**Marking**|**Reel size (inches)**|**Tape width (mm)**|**Quantity per reel **|
|DSS5320T-7|ZP4|7|8mm|3,000|



- Notes: 1. No purposefully added lead. 

   2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com 

   3. For packaging details, go to our website at http://www.diodes.com 

## **Marking Information** 

ZP4 = Product Type Marking Code **ZP4** YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) 

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Date Code Key<br>Year 2009 2010 2011 2012 2013 2014 2015 2016<br>Ee Code W  X  Y  Z  A  B  C D<br>Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec<br>ee Code 1  2  3 4  5 6 7  8 9 O N  D<br>**----- End of picture text -----**<br>


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DSS5320T Document number: DS31620 Rev. 2 - 2 

October 2010 © Diodes Incorporated 

**DSS5320T** 

## **Maximum Ratings** @TA = 25°C unless otherwise specified 

|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol **|**Value**|**Unit**|
|Collector-Base Voltage|VCBO|-20|V|
|Collector-Emitter Voltage|VCEO|-20|V|
|Emitter-Base Voltage|VEBO|-5|V|
|Peak Pulse Current|ICM|-5|A|
|Repetitive Peak Pulse Current(Note 4)|ICRP|-3|A|
|Continuous Collector Current|IC|-2|A|
|Base Current|IB|-0.5|A|



## **Thermal Characteristics** 

|**Thermal Characteristics**||||
|---|---|---|---|
|**Characteristic**|**Symbol **|**Value**|**Unit**|
|Power Dissipation(Note 5) @TA= 25°C|PD|600|mW|
|Thermal Resistance,Junction to Ambient Air(Note 4) @TA= 25°C|RθJA|209|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C|



Notes: 4. Operated under pulsed conditions: pulse width ≤100ms, duty cycle ≤ 0.25. 

5. Device mounted on 15mm x 15mm x1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 

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0.8<br>0.6<br>0.4<br>0.2 R θJA [ = 209] °C/W<br>0<br>0 50 100 150 200<br>TA, AMBIENT TEMPERATURE (°C)<br>Fig. 1 Power Dissipation vs. Ambient Temperature<br>, POWER DISSIPATION (W)<br>D<br>P<br>**----- End of picture text -----**<br>


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100<br>Ta = 25°C Single<br>Non-Repetitive Pulse<br>10<br>1<br>DC<br>Pw = 100ms<br>0.1<br>Pw = 10ms<br>Pw =1m<br>0.01<br>Pw = 100us<br>0.001<br>0.1 1 10 100<br>VCE, COLLECTOR EMITTER VOLTAGE (V)<br>Fig. 2  Safe Operating Area<br>, COLLECTOR CURRENT (A)<br>IC<br>**----- End of picture text -----**<br>


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DSS5320T Document number: DS31620 Rev. 2 - 2 

October 2010 © Diodes Incorporated 

www.diodes.com 

**DSS5320T** 

## **Electrical Characteristics** @TA = 25°C unless otherwise specified 

|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol **|**Min**|**Typ**|**Max **|**Unit**|**Test Conditions**|
|Collector-Base Cutoff Current|ICBO|⎯|⎯|-100|nA|VCB= -20V,IE= 0|
|||⎯|⎯|-50|μA|VCB= -20V,IE= 0,TA= 150°C|
|Emitter-Base Cutoff Current|IEBO|⎯|⎯|-100|nA|VEB= -5V,IC= 0|
|Collector-Base Breakdown Voltage|BVCBO|-20|⎯|⎯|V|IC= -100μA|
|Collector-Emitter Breakdown Voltage(Note 6)|BVCEO|-20|⎯|⎯|V|IC= -10mA|
|Emitter-Base Breakdown Voltage|BVEBO|-5|⎯|⎯|V|IE= -100μA|
|DC Current Gain (Note 5)|hFE|220|⎯|⎯|⎯|VCE= -2V,IC= -0.1A|
|||220|⎯|⎯||VCE= -2V,IC= -0.5A|
|||200|⎯|⎯||VCE= -2V,IC= -1A|
|||150|⎯|⎯||VCE= -2V,IC= -2A|
|||100|⎯|⎯||VCE= -2V,IC= -3A|
|Collector-Emitter Saturation Voltage (Note 6)|VCE(sat)|⎯|⎯|-70|mV|IC= -0.5A,IB= -50mA|
|||⎯|⎯|-130||IC= -1A,IB= -50mA|
|||⎯|⎯|-230||IC= -2A,IB= -100mA|
|||⎯|⎯|-210||IC= -2A,IB= -200mA|
|||⎯|⎯|-300||IC= -3A,IB= -300mA|
|Equivalent On-Resistance|RCE(sat)|⎯|⎯|105|mΩ|IE= -2A,IB= -200mA|
|Base-Emitter Saturation Voltage|VBE(sat)|⎯|⎯|-1.1|V|IC= -2A,IB= -100mA|
|||⎯|⎯|-1.2|V|IC= -3A,IB= -300mA|
|Base-Emitter Turn-on Voltage|VBE(on)|⎯|⎯|-1.2|V|VCE= -2V,IC= -1A|
|Transition Frequency|fT|100|180|⎯|MHz|VCE= -5V, IC= -100mA,<br>f = 100MHz|
|Output Capacitance|Cob|⎯|25|50|pF|VCB= -10V,f = 1MHz|
|Turn-On Time|ton|⎯|67|⎯|ns|VCC= -10V, IC= -1A,<br>IB1= -IB2= -50mA|
|DelayTime|td|⎯|23|⎯|ns||
|Rise Time|tr|⎯|44|⎯|ns||
|Turn-Off Time|toff|⎯|224|⎯|ns||
|Storage Time|ts|⎯|184|⎯|ns||
|Fall Time|tf|⎯|40|⎯|ns||



Notes: 6. Measured under pulsed conditions.  Pulse width = 300μs.  Duty cycle ≤2%. 

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2.0<br>1.8<br>1.6<br>IB = 5mA<br>1.4<br>IB = 4mA<br>1.2<br>1.0 I B = 3mA<br>0.8<br>IB = 2mA<br>0.6<br>0.4 I B  = 1mA<br>0.2<br>0<br>0 1 2 3 4 5<br>VCE, COLLECTOR-EMITTER VOLTAGE (V)<br>Fig. 3 Typical Collector Current vs. Collector-Emitter Voltage<br>[=]<br>DSS5320T<br>Document number: DS31620 Rev. 2 - 2<br>, COLLECTOR CURRENT (A)<br>IC<br>**----- End of picture text -----**<br>


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1,000<br>900 V CE  = -2V<br>800 TA = 150°C<br>TA = 125°C<br>700<br>TA = 85°C<br>600<br>500<br>TA = 25°C<br>400<br>300<br>200 T A  = -55°C<br>100<br>0<br>0.001 0.01 0.1 1 10<br>IC, COLLECTOR CURRENT (A)<br>Fig. 4 Typical DC Current Gain vs. Collector Current<br>, DC CURRENT GAIN<br>FE<br>h<br>**----- End of picture text -----**<br>


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October 2010 © Diodes Incorporated 

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**DSS5320T** 

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1 1<br>I C /I B  = 10<br>I C /I B  = 20<br>0.1 0.1<br>TA = 150°C<br>T A  = 150°C T A  = 125°C<br>T A = 125°C TA = 85 ° C<br>0.01 TA = 25 TA °  = 85°C C 0.01 TA = -55°C T A = 25°C<br>T A  = -55°C<br>0.001 0.001<br>0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Fig. 5 Typical Collector-Emitter Saturation Voltage Fig. 6 Typical Collector-Emitter Saturation Voltage<br>vs. Collector Current vs. Collector Current<br>1.2 1.2<br>I C /I B  = 10<br>1.0 VCE = -2V 1.0<br>0.8 0.8<br>T A  = -55°C T A  = -55°C<br>0.6 0.6 TA = 25°C<br>T A  = 25°C<br>TA = 85°C<br>0.4 0.4 T A  = 125°C<br>TA = 85°C T A = 150°C<br>0.2 aay TA = 150 ° C TA = 125°C 0.2 ae<br>0 0<br>0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Fig. 8 Typical Base-Emitter Saturation Voltage<br>Fig. 7 Typical Base-Emitter Turn-On Voltage<br>vs. Collector Current<br>vs. Collector Current<br>VOLTAGE (V) VOLTAGE (V)<br>, COLLECTOR-EMITTER  , COLLECTOR-EMITTER<br>CE(SAT) SATURATION  CE(SAT) SATURATION<br>V V<br>, BASE-EMITTER TURN-ON VOLTAGE (V) , BASE-EMITTER SATURATION VOLTAGE (V)<br>BE(ON)<br>V<br>BE(SAT)<br>V<br>**----- End of picture text -----**<br>


## **Package Outline Dimensions** 

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A SOT-23<br>Dim  Min  Max  Typ<br>A  0.37  0.51  0.40<br>B  1.20 1.40 1.30<br>B C<br>C 2.30 2.50 2.40<br>D  0.89 1.03 0.915<br>F  0.45 0.60 0.535<br>G  1.78  2.05  1.83<br>H<br>H  2.80  3.00  2.90<br>J 0.013 0.10 0.05<br>K M<br>K1 K  0.903 1.10 1.00<br>D K1  -  -  0.400<br>J F G L L  0.45 0.61  0.55<br>M  0.085 0.18  0.11<br>α  0°  8°  -<br>All Dimensions in mm<br>@ ) ESS<br>**----- End of picture text -----**<br>


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DSS5320T Document number: DS31620 Rev. 2 - 2 

October 2010 © Diodes Incorporated 

www.diodes.com 

**DSS5320T** 

## **Suggested Pad Layout** 

|~~X~~<br>~~E~~<br>Y<br>C<br>Z~~a Lb~~<br>~~Walon~~<br>~~Rab~~|**Dimensions**<br>**Z**<br>**X**<br>**Y**<br>**C**<br>**E**||**Value (in mm)**<br>2.9<br>0.8<br>0.9<br>2.0<br>1.35|
|---|---|---|---|



## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A. Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devicesor systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2010, Diodes Incorporated 

**www.diodes.com** 

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DSS5320T Document number: DS31620 Rev. 2 - 2 

October 2010 © Diodes Incorporated