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DSS5160T-7
Bipolar (BJT) Single Transistor, PNP, 60 V, 1 A, 725 mW, SOT-23, Surface Mount
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- Manufacturer: DIODES INC.
- Product type:
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: DSS Series
- Qualification: -
- Power Dissipation: 725mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: PNP
- Transition Frequency: 150MHz
- Transistor Case Style: SOT-23
- DC Current Gain hFE Min: 100hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 1A
- Collector Emitter Voltage Max: 60V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.112 € |
| Current stock | 25+ |
| Lead time | 30 days |
Datasheet
**DSS5160T** ## **60V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR** ## **Features** - Epitaxial Planar Die Construction - Ideal for Medium Power Amplification and Switching - **“Lead Free”, RoHS Compliant (Note 1)** - **Halogen and Antimony Free. "Green" Device (Note 2)** - **Qualified to AEC-Q101 Standards for High Reliability** ## **Mechanical Data** - Case: SOT23 - Case Material: Molded Plastic, "Green” Molding Compound. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 - Terminals: Finish — Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 - Weight: 0.008 grams (approximate) |||||C||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| ||SOT23<br>e|B<br>|E<br>E<br>B<br>C<br> ~~O~~L|||||||||||| ||Top View||Device Symbol|||Pin-Out Top||||||||| |**Ordering Information** (Note 3)||||||||||||||| |||||||||||||||| |**Product**|**Marking**||**Reel size(inches)**|||**Tape width(mm)**||||||||**Quantity per reel**| |DSS5160T-7|ZP9|||7|||||8mm||mm|||3,000| ## **Ordering Information** (Note 3) - Notes: 1. No purposefully added lead. 2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com 3. For packaging details, go to our website at http://www.diodes.com ## **Marking Information** **==> picture [197 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> ZP9 ZP9 = Product Type Marking Code<br>**----- End of picture text -----**<br> 1 of 6 **www.diodes.com** DSS5160T Document number: DS35532 Rev. 1 - 2 January 2012 © Diodes Incorporated **DSS5160T** ## **Maximum Ratings** @TA = 25°C unless otherwise specified |**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified| |---|---|---|---| ||||| |**Characteristic**|**Symbol **|**Value**|**Unit**| |Collector-Base Voltage|VCBO|-80|V| |Collector-Emitter Voltage|VCEO|-60|V| |Emitter-Base Voltage|VEBO|-5|V| |Continuous Collector Current|IC|-1|A| |Peak Pulse Collector Current|ICM|-2|A| |Base Current(DC)|IB|-300|mA| |Peak Base Current|IBM|-1|A| ## **Thermal Characteristics** @TA = 25°C unless otherwise specified |**Thermal Characteristics **@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified||| |---|---|---|---| |**Characteristic**|**Symbol **|**Value**|**Unit**| |Power Dissipation(Note 5)|PD|725|mW| |Thermal Resistance,Junction to Ambient(Note 5)|RθJA|172|°C/W| |Thermal Resistance,Junction to Ambient Air(Note 4)|RθJA|79|°C/W| |Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C| Notes: 4. Operated under pulsed conditions: pulse width ≤100ms, duty cycle ≤ 0.25. 5. Device mounted on 15mm x 15mm x1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. ## **Thermal Characteristics** **==> picture [420 x 319] intentionally omitted <==** **----- Start of picture text -----**<br> V CE(sat) Tamb=25°C 0.8<br>10 Limit 15mm x 15mm<br>1oz FR4<br>0.6<br>1<br>100m PATON DC 0.4 PLTTENE<br>1s<br>10m<br>100ms<br>0.2<br>1m 10ms 1ms 100µs<br>1000.1 µ 1 10 100 0.00 20 40 60 80 100 120 140 160<br>-VCE Collector-Emitter Voltage (V) Temperature (°C)<br>Safe Operating Area Derating Curve<br>180<br>160 Tamb=25°C Ltt a Single Pulse ll<br>140 100 Tamb=25°C<br>“Cee =| SCC<br>120<br>100 D=0.5<br>er aN lo IMM COT Ni CCT<br>80 10<br>60<br>D=0.2 Single Pulse<br>40<br>ttl ~Y- ll D=0.05 EE<br>20 1<br>0 2eetUTailTow D=0.1 UY ELITHi aEET LUTSeri SeetiATTSectatmeri SeriaSeriieeere<br>100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s) Pulse Width (s)<br> Collector Current (A)<br>C<br>- I<br> Max Power Dissipation (W)<br> Maximum Power (W)<br>Thermal Resistance (°C/W)<br>**----- End of picture text -----**<br> ## **Transient Thermal Impedance** **Pulse Power Dissipation** 2 of 6 **www.diodes.com** DSS5160T Document number: DS35532 Rev. 1 - 2 January 2012 © Diodes Incorporated **DSS5160T** **Electrical Characteristics** @TA = 25°C unless otherwise specified |**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified||||| |---|---|---|---|---|---|---| |**Characteristic**<br>~~a~~|**Symbol**<br>~~a~~|**Min**<br>~~a~~|**Typ**<br>~~a~~|**Max**<br>~~a~~|**Unit**<br>~~a~~|**Test Conditions**<br>~~a~~| |Collector-Base Breakdown Voltage<br>~~a~~|BVCBO<br>~~a~~|-80<br>~~a~~|⎯<br>~~a~~|⎯<br>~~a~~|V<br>~~a~~|IC= -100μA<br>~~a~~| |Collector-Emitter Breakdown Voltage(Note 6)<br>~~ee~~|BVCEO<br>~~ee~~|-60<br>~~ee~~|⎯<br>~~ee~~|⎯<br>~~ee~~|V<br>~~ee~~|IC= -10mA<br>~~ee~~| |Emitter-Base Breakdown Voltage<br>~~ee~~|BVEBO<br>~~ee~~<br>~~es~~|-5<br>~~ee~~<br>~~es~~|⎯<br>~~ee~~<br>~~ee~~|⎯<br>~~ee~~<br>~~ee~~|V<br>~~ee~~<br>~~ee~~|IE= -100μA<br>~~ee~~| |Collector-Base Cutoff Current<br>~~ee~~<br>~~a~~|ICBO<br>~~ee~~<br>~~es~~|⎯<br>~~ee~~<br>~~es~~|⎯<br>~~ee~~<br>~~ee~~|-100<br>~~ee~~<br>~~ee~~|nA <br>~~ee~~<br>~~ee~~|VCB= -20V,IE= 0<br>~~ee~~| |||⎯<br>~~ee~~<br>~~es~~<br>~~=—-.——~~|⎯<br>~~ee~~<br>~~ee~~<br>~~=—-.——~~|-50<br>~~ee~~<br>~~ee~~<br>~~=—-.——~~|μA<br>~~ee~~<br>~~ee~~<br>~~=—-.——~~|VCB= -20V,IE= 0,TA= 150°C<br>~~ee~~<br>~~=—-.——~~| |Emitter-Base Cutoff Current<br>~~QO~~<br>~~a~~|IEBO<br>~~es~~<br>~~QO~~|⎯<br>~~es ~~<br>~~QO~~<br>~~=—-.——~~|⎯<br> ~~ee ~~<br>~~QO~~<br>~~=—-.——~~|-100<br> ~~ee ~~<br>~~QO~~<br>~~=—-.——~~|nA<br> ~~ee~~<br>~~QO~~<br>~~=—-.——~~|VEB= -5V,IC= 0<br>~~QO~~<br>~~=—-.——~~| |DC Current Gain (Note 6)<br>~~a~~|hFE|200<br>~~=—-.——~~|⎯<br>~~=—-.——~~|⎯<br>~~=—-.——~~|⎯<br>~~=—-.——~~|VCE= -5V,IC= -1mA<br>~~=—-.——~~| |||150<br>~~=—-.——~~|⎯<br>~~=—-.——~~|⎯<br>~~=—-.——~~||VCE= -5V,IC= -500mA<br>~~=—-.——~~| |||100<br>~~=—-.——~~|⎯<br>~~=—-.——~~|⎯<br>~~=—-.——~~||VCE= -5V,IC= -1A<br>~~=—-.——~~| |Collector-Emitter Saturation Voltage (Note 6)<br>~~a~~<br>~~EE~~|VCE(sat)<br>~~EE~~|⎯<br>~~=—-.——~~<br>~~EE~~|⎯<br>~~=—-.——~~<br>~~EE~~|-175<br>~~=—-.——~~<br>~~EE~~|mV<br>~~=—-.——~~<br>~~EE~~|IC= -100mA,IB= -1mA<br>~~=—-.——~~<br>~~EE~~| |||⎯<br>~~=—-.——~~<br>~~EE~~|⎯<br>~~=—-.——~~<br>~~EE~~|-180<br>~~=—-.——~~<br>~~EE~~||IC= -500mA,IB= -50mA<br>~~=—-.——~~<br>~~EE~~| |||⎯<br>~~EE~~|⎯<br>~~EE~~|-340<br>~~EE~~||IC= -1A, IB= -100mA<br>~~EE~~| |Equivalent On-Resistance|RCE(sat)|⎯|⎯|340|mΩ|IE= -1A,IB= -100mA| |Base-Emitter Saturation Voltage<br>~~ee~~|VBE(sat)<br>~~ee~~|⎯<br>~~ee~~|⎯<br>~~ee~~|-1.1<br>~~ee~~|V<br>~~ee~~|IC= -1A,IB= -50mA<br>~~ee~~| |Base-Emitter Turn-on Voltage<br>~~ee~~|VBE(on)<br>~~ee~~|⎯<br>~~ee~~|⎯<br>~~ee~~|-0.9<br>~~ee~~|V<br>~~ee~~|VCE= -5V,IC= -1A<br>~~ee~~| |Transition Frequency<br>~~ee~~<br>~~ee~~|fT<br>~~ee~~|150<br>~~ee~~|⎯<br>~~ee~~|⎯<br>~~ee~~|MHz<br>~~ee~~|VCE= -10V, IC= -50mA,<br>f = 100MHz<br>~~ee~~<br>~~(~~| |Output Capacitance<br>~~eG~~<br>~~ee~~|Cob<br>~~eG~~|⎯<br>~~eG~~|⎯<br>~~eG~~|15<br>~~eG~~|pF<br>~~eG~~|VCB= -10V,f = 1MHz<br>~~eG~~<br>~~(~~| |Turn-On Time<br>~~ee~~|ton|⎯|75<br>~~ee~~|⎯<br>~~ee~~|ns<br>~~ee~~|VCC= -10V, IC= -0.5A,<br>IB1= IB2= -25mA<br>~~(~~<br>~~ee~~| |DelayTime<br>~~ee~~|td|⎯|35<br>~~ee~~|⎯<br>~~ee~~|ns<br>~~ee~~|| |Rise Time<br>~~ee~~<br>~~et~~|tr<br>~~et~~|⎯<br>~~et~~|40<br>~~ee~~<br>~~et~~|⎯<br>~~ee~~<br>~~et~~|ns<br>~~ee~~<br>~~et~~|| |Turn-Off Time<br>~~ee~~<br>~~et~~|toff<br>~~et~~|⎯<br>~~et~~|265<br>~~ee~~<br>~~et~~|⎯<br>~~ee~~<br>~~et~~|ns<br>~~ee~~<br>~~et~~|| |Storage Time<br>~~ee~~<br>~~EE~~|ts<br>~~EE~~|⎯<br>~~EE~~|230<br>~~ee~~<br>~~EE~~|⎯<br>~~ee~~<br>~~EE~~|ns<br>~~ee~~<br>~~EE~~|| |Fall Time<br>~~ee~~<br>~~EE~~|tf<br>~~EE~~|⎯<br>~~EE~~|35<br>~~ee~~<br>~~EE~~|⎯<br>~~ee~~<br>~~EE~~|ns<br>~~ee~~<br>~~EE~~|| 3 of 6 **www.diodes.com** DSS5160T Document number: DS35532 Rev. 1 - 2 January 2012 © Diodes Incorporated **DSS5160T** **==> picture [481 x 665] intentionally omitted <==** **----- Start of picture text -----**<br> 800 1<br>700 V CE = -5V IC/IB = 10<br>600<br>TA = 150°C 0.1<br>500 TA = 150°C<br>400 TA = 85°C T A = 85°C<br>TA = 25°C<br>300 TA = 25°C 0.01 TA = -55 ° C<br>200<br>oe TA = -55°C<br>100<br>0 0.001<br>1 10 100 1,000 0.1 1 10 100 1,000<br>-IC, COLLECTOR CURRENT (mA) -IC, COLLECTOR CURRENT (mA)<br>Fig. 5 Typical DC Current Gain vs. Collector Current Fig. 6 Typical Collector-Emitter Saturation Voltage<br>vs. Collector Current<br>1.2 1.2<br>V CE = -5V<br>1.0 1.0 I C /I B = 10<br>0.8 0.8<br>TA = -55°C TA = -55°C<br>0.6 0.6<br>T A = 25°C TA = 25°C<br>0.4 0.4<br>TA = 85°C TA = 85°C<br>0.2 eee T A = 150°C ee 0.2 T A = 150°C<br>0 0<br>0.1 1 10 100 1,000 0.1 1 10 100 1,000<br>-IC, COLLECTOR CURRENT (mA) -IC, COLLECTOR CURRENT (mA)<br>Fig. 7 Typical Base-Emitter Turn-On Voltage Fig. 8 Typical Base-Emitter Saturation Voltage<br>vs. Collector Current vs. Collector Current<br>180<br>150 f = 1MHz<br>120<br>90<br>TIN<br>60 Cibo<br>30<br>rir Cobo RRL<br>0<br>0.1 1 10 100<br>VR, REVERSE VOLTAGE (V)<br>Fig. 9 Typical Capacitance Characteristics<br>VOLTAGE (V)<br>, COLLECTOR-EMITTER<br>, DC CURRENT GAIN<br>FE<br>h<br>CE(SAT) SATURATION<br>-V<br>, BASE-EMITTER TURN-ON VOLTAGE (V) , BASE-EMITTER SATURATION VOLTAGE (V)<br>BE(ON)<br>-V<br>BE(SAT)<br>-V<br>CAPACITANCE (pF)<br>**----- End of picture text -----**<br> 4 of 6 **www.diodes.com** DSS5160T Document number: DS35532 Rev. 1 - 2 January 2012 © Diodes Incorporated **DSS5160T** ## **Package Outline Dimensions** **==> picture [325 x 163] intentionally omitted <==** **----- Start of picture text -----**<br> A SOT23<br>Dim Min Max Typ<br>A 0.37 0.51 0.40<br>B 1.20 1.40 1.30<br>B C<br>C 2.30 2.50 2.40<br>D 0.89 1.03 0.915<br>F 0.45 0.60 0.535<br>H EEE G 1.78 2.05 1.83<br>we === H 2.80 3.00 2.90<br>J 0.013 0.10 0.05<br>K M<br>K1 K 0.903 1.10 1.00<br>D K1 - - 0.400<br>J F G L L 0.45 0.61 0.55<br>J, EES M 0.085 0.18 0.11<br>α 0° 8° -<br>All Dimensions in mm<br>( Gy a ee ee ee<br>**----- End of picture text -----**<br> ## **Suggested Pad Layout** **==> picture [184 x 109] intentionally omitted <==** **----- Start of picture text -----**<br> Y<br>Z<br>Lb C<br>X E<br>WalonKhe<br>**----- End of picture text -----**<br> |**Dimensions**|**Value (in mm)**| |---|---| |**Z**|2.9| |**X**|0.8| |**Y**|0.9| |**C**|2.0| |**E**|1.35| 5 of 6 **www.diodes.com** DSS5160T Document number: DS35532 Rev. 1 - 2 January 2012 © Diodes Incorporated **DSS5160T** ## **IMPORTANT NOTICE** DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. ## **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: - A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devicesor systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2012, Diodes Incorporated **www.diodes.com** 6 of 6 **www.diodes.com** DSS5160T Document number: DS35532 Rev. 1 - 2 January 2012 © Diodes Incorporated
Updated at June 6, 2026
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