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DSS4160V-7
Bipolar (BJT) Single Transistor, NPN, 60 V, 100 mA, 600 mW, SOT-563, Surface Mount
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- Manufacturer: DIODES INC.
- Product type:
- Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:150MHz; Power Dissipation Pd:600mW; DC Collector Current:100mA; DC Current Gain hFE:250hFE; Transist
- No. of Pins: 6Pins
- Product Range: -
- Qualification: -
- Power Dissipation: 600mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN
- Transition Frequency: 150MHz
- Transistor Case Style: SOT-563
- DC Current Gain hFE Min: 250hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 100mA
- Collector Emitter Voltage Max: 60V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.045 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**DSS4160V** **LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR** Please click here to visit our online s Please click here to visit our online spice pice models database. models database. ## **Features** - Epitaxial Planar Die Construction - Complementary PNP Type Available (DSS5160V) - Low Collector-Emitter Saturation Voltage, VCE(SAT) - Surface Mount Package Suited for Automated Assembly - Ultra-Small Surface Mount Package - **Lead Free/RoHS Compliant (Note 1)** - **"Green Device" (Note 2)** ## **Mechanical Data** - Case: SOT-563 - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020D - Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 - Marking Information: See Page 4 - Ordering Information: See Page 4 - Weight: 0.003 grams (approximate) |Top View|Bottom View|Device Schematic<br>Pin Out Configuration<br>1, 2, 5, 6<br>3<br>4|Pin Out Configuration<br>1<br>6|Pin Out Configuration<br>2<br>3<br>5<br>4| |---|---|---|---|---| ## **Maximum Ratings** @TA = 25°C unless otherwise specified |**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified| |---|---|---|---| ||||| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Collector-Base Voltage|VCBO|80|V| |Collector-Emitter Voltage|VCEO|60|V| |Emitter-Base Voltage|VEBO|5|V| |Collector Current - Continuous|IC|1|A| |Peak Pulse Collector Current|ICM|2|A| |Base Current(DC)|IB|300|mA| |Peak Base Current|IBM|1|A| ## **Thermal Characteristics** |**Thermal Characteristics**|||| |---|---|---|---| |**Characteristic**|**Symbol **|**Value**|**Unit**| |Power Dissipation(Note 3) @TA= 25°C|PD|600|mW| |Thermal Resistance,Junction to Ambient(Note 3) @TA= 25°C|RθJA|208|°C/W| |Operatingand Storage Temperature Range|TJ, TSTG|-55 to +150|°C| - Notes: 1. No purposefully added lead. 2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB with minimum recommended pad layout. 1 of 5 **www.diodes.com** DSS4160V Document number: DS31671 Rev. 2 - 2 March 2009 © Diodes Incorporated **DSS4160V** ## **Electrical Characteristics** @TA = 25°C unless otherwise specified |**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified| |---|---|---|---|---|---|---| |||||||| |**Characteristic**|**Symbol **|**Min**|**Typ**|**Max **|**Unit**|**Test Condition **| |**OFFCHARACTERISTICS**||||||| |Collector-Base Breakdown Voltage|V(BR)CBO|80|⎯|⎯|V|IC= 100μA,IE= 0| |Collector-Emitter Breakdown Voltage(Note 4)|(BR)CBO<br>V(BR)CEO|60|⎯|⎯|V|IC= 10mA,IB= 0| |Emitter-Base Breakdown Voltage<br>~~a~~|(BR)CEO<br>V(BR)EBO<br>~~OO~~|5<br>~~OO~~|⎯<br>~~OO~~|⎯|V|IE= 100μA,IC= 0| |Collector Cutoff Current<br>~~a~~|(BR)EBO<br>ICBO<br>~~OO~~|⎯<br>~~OO~~|⎯<br>~~OO~~|100<br>50|nA<br>μA|VCB= 60V, IE= 0<br>VCB= 60V,IE= 0,TA= 150°C| |Collector Cutoff Current<br>~~a~~|ICES<br>~~OO~~|⎯<br>~~OO~~|⎯<br>~~OO~~|100|nA|VCE= 60V,VBE= 0| |Emitter Cutoff Current|IEBO|⎯|⎯|100|nA|VEB= 5V,IC= 0| |**ON CHARACTERISTICS (Note 4)**||||||| |DC Current Gain<br>~~|~~|hFE|250<br>200<br>100<br>~~ILL.~~|⎯<br>⎯<br>⎯<br>~~ILL.~~|⎯<br>⎯<br>⎯<br>~~ILL.~~|⎯<br>~~ILL.~~|VCE= 5V, IC= 1mA<br>VCE= 5V, IC= 500mA<br>VCE= 5V,IC= 1A<br>~~ILL.~~| |Collector-Emitter Saturation Voltage<br>~~po~~|VCE(SAT)<br>~~po~~|⎯<br>⎯<br>⎯<br>~~po~~|⎯<br>⎯<br>⎯<br>~~po~~|110<br>140<br>250<br>~~po~~|mV<br>~~po~~|IC= 100mA, IB= 1mA<br>IC= 500mA, IB= 50mA<br>IC= 1A,IB= 100mA<br>~~po~~| |Collector-Emitter Saturation Resistance<br>~~po~~|RCE(SAT)<br>~~po~~|⎯<br>~~po~~|⎯<br>~~po~~|250<br>~~po~~|mΩ<br>~~po~~|IC= 1A,IB= 100mA<br>~~po~~| |Base-Emitter Saturation Voltage|CE(SAT)<br>VBE(SAT)|⎯|⎯|1.1|V|IC= 1A,IB= 50mA| |Base-Emitter Turn On Voltage|BE(SAT)<br>VBE(ON)|⎯|⎯|0.9|V|VCE= 5V,IC= 1A| |BE(ON)<br>**SMALLSIGNALCHARACTERISTICS**||||||| |Output Capacitance|Cobo|⎯|⎯|10|pF|VCB= 10V,f = 1.0MHz| |Current Gain-Bandwidth Product|fT|150|⎯|⎯|MHz|VCE= 10V,IC= 50mA,f = 100MHz| |**SWITCHING CHARACTERISTICS**||||||| |Turn-On Time|ton|⎯|68|⎯|ns|VCC= 10V<br>IC= 0.5A, IB1= IB2= 25mA| |DelayTime|td|⎯|31|⎯|ns|| |Rise Time|tr|⎯|37|⎯|ns|| |Turn-Off Time|toff|⎯|430|⎯|ns|| |Storage Time|ts|⎯|383|⎯|ns|| |Fall Time|tf|⎯|47|⎯|ns|| Notes: 4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%. **==> picture [210 x 222] intentionally omitted <==** **----- Start of picture text -----**<br> 600<br>500<br>400<br>300<br>200<br>100 RθJA = 208 ° C/W<br>0 HE<br>0 25 50 75 100 125 150<br>TA, AMBIENT TEMPERATURE (°C)<br>Fig. 1 Power Dissipation vs.<br>Ambient Temperature (Note 3)<br>, POWER DISSIPATION (mW)<br>D<br>P<br>**----- End of picture text -----**<br> **==> picture [216 x 218] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>Pw = 1ms<br>1<br>Pw = 10ms<br>0.1<br>Pw = 100ms<br>DC<br>0.01<br>0.001<br>0.1 1 10 100<br>VCE, COLLECTOR-EMITTER VOLTAGE (V)<br>Fig. 2 Typical Collector Current<br>vs. Collector-Emitter Voltage (Note 3)<br>, COLLECTOR CURRENT (A)<br>IC<br>**----- End of picture text -----**<br> 2 of 5 **www.diodes.com** DSS4160V Document number: DS31671 Rev. 2 - 2 March 2009 © Diodes Incorporated **==> picture [492 x 695] intentionally omitted <==** **----- Start of picture text -----**<br> DSS4160V<br>1,000 1<br>TA = 150°C VCE = 5V I C /I B = 10<br>800<br>TA = 85°C 0.1<br>600 T A = 150°C<br>TA = 25°C TA = 85°C<br>400 T A = 25°C<br>0.01 TA = -55°C<br>TA = -55°C<br>200<br>0 0.001<br>1 10 100 1,000 10,000 0.1 1 10 100 1,000 10,000<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Fig. 3 Typical DC Current Gain vs. Collector Current Fig. 4 Typical Collector-Emitter Saturation Voltage<br>vs. Collector Current<br>1.2 1.2<br>VCE = 5V IC/IB = 10<br>1.0 1.0<br>0.8 #8 0.8 yy<br>TA = -55°C T A = -55°C<br>0.6 0.6<br>TA = 25°C TA = 25 ° C<br>0.4 0.4<br>T A = 85°C TA = 85°C<br>0.2 BB 0.2 T A = 150°C<br>TA = 150°C<br>0 0<br>0.1 1 10 100 1,000 10,000 0.1 1 10 100 1,000 10,000<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Fig. 5 Typical Base-Emitter Turn-On Voltage Fig. 6 Typical Base-Emitter Saturation Voltage<br>vs. Collector Current vs. Collector Current<br>200<br>f = 1MHz<br>160<br>120<br>80 C ibo<br>z<br>40<br>0 Cobo<br>0.1 1 10 100<br>VR, REVERSE VOLTAGE (V)<br>Fig. 7 Typical Capacitance Characteristics<br>VOLTAGE (V)<br>, COLLECTOR-EMITTER<br>, DC CURRENT GAIN<br>FE<br>h SATURATION<br>CE(SAT)<br>V<br>, BASE-EMITTER TURN-ON VOLTAGE (V) , BASE-EMITTER SATURATION VOLTAGE (V)<br>BE(ON)<br>V<br>BE(SAT)<br>V<br>CAPACITANCE (pF)<br>**----- End of picture text -----**<br> 3 of 5 **www.diodes.com** DSS4160V Document number: DS31671 Rev. 2 - 2 March 2009 © Diodes Incorporated **DSS4160V** **==> picture [399 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>D = 0.7<br>D = 0.5<br>D = 0.3<br>0.1<br>D = 0.1<br>D = 0.05 D = 0.9 RθJA(t) = r(t) * RθJA<br>R θJA = 178°C/W<br>D = 0.02<br>0.01 D = 0.01 P(pk) t1<br>t 2<br>D = 0.005 T J - T A = P * R θJA (t)<br>Duty Cycle, D = t 1 /t 2<br>D = Single Pulse<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 10,000<br>t1, PULSE DURATION TIME (s)<br>Fig. 8 Transient Thermal Response (Note 3)<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br> ## **Ordering Information** (Note 5) **==> picture [406 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> ||||| |---|---|---|---| |Part Number|Case|Packaging| |DSS4160V-7|SOT-563|3000/Tape|& Reel| **----- End of picture text -----**<br> Notes: 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. ## **Marking Information** ZN9 = Product Type Marking Code YM = Date Code Marking **ZN9 YM** Y = Year (ex: V = 2008) M = Month (ex: 9 = September) **==> picture [527 x 273] intentionally omitted <==** **----- Start of picture text -----**<br> |||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---| |Date|Code Key| |Year|2008|2009|2010|2011|2012|2013|2014|2015| |———————|Code|V|W|X|Y|Z|A|B|C| |Month|Jan|Feb|Mar|Apr|May|Jun|Jul|Aug|Sep|Oct|Nov|Dec| |Code|1|2|3|4|5|6|7|8|9|O|N|D| |——| |Package Outline Dimensions| |A| |ee| |SOT-563| |17|h| |B|C|Dim|Min|Max|Typ| |A|0.15|0.30|0.20| |B|1.10|1.25|1.20| |;|C|1.55|1.70|1.60| |D| |D|-|-|0.50| |G| |G|0.90|1.10|1.00| |H|1.50|1.70|1.60| |K|0.55|0.60|0.60| |K|M|L|0.10|0.30|0.20| |M|0.10|0.18|0.11| |All Dimensions in mm| |H| |L| |fron|of|tt| **----- End of picture text -----**<br> 4 of 5 DSS4160V Document number: DS31671 Rev. 2 - 2 March 2009 © Diodes Incorporated **www.diodes.com** **DSS4160V** ## **Suggested Pad Layout** **==> picture [290 x 111] intentionally omitted <==** **----- Start of picture text -----**<br> |||||||| |---|---|---|---|---|---|---| |C2|C2| |Kae| |Dimensions|Value|(in mm)| |Z|2.2| |G|1.2| |S|Z|G|oo;|C1|X|0.375| |Y|0.5| |C1|1.7| |Y|C2|0.5| |Poot| |X| |Ie|>| **----- End of picture text -----**<br> ## IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. ## LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. 5 of 5 **www.diodes.com** DSS4160V Document number: DS31671 Rev. 2 - 2 March 2009 © Diodes Incorporated
Updated at June 6, 2026
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