DSS30101L-7

**DSS30101L** Cd 

**LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR** 

## **Features** 

- Ideal for Medium Power Amplification and Switching 

- Ultra Low Collector-Emitter Saturation Voltage 

- **Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)** 

- **“Green” Device (Note 2)** 

- **ESD rating: 400V-MM, 8KV-HBM** 

## **Mechanical Data** 

- Case: SOT-23 

- Case Material: Molded Plastic, "Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Finish — Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 

• Weight: 0.008 grams (approximate) 

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C<br>C<br>B<br>E B E<br>e OE<br>Top View Device Symbol Pin Configuration<br> Information<br>Part Number Case Packaging<br>DSS30101L-7  SOT-23 3000/Tape & Reel<br>**----- End of picture text -----**<br>


## **Ordering Information** 

Notes: 1. No purposefully added lead. Halogen and Antimony Free. 

2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com 

## **Marking Information** 

ZN3 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) 

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YM = Date Code Marking<br>ZN3<br>Y = Year (ex: V = 2008)<br>M = Month (ex: 9 = September)<br>YM<br>**----- End of picture text -----**<br>


Date Code Key **Year 2008 2009 2010 2011 2012 2013 2014 2015 Code** V W X Y Z A B C ~~—~~ **Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec** ~~rt~~ **Code** 1 2 3 4 5 6 7 8 9 O N D 

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DSS30101L Document number: DS31588 Rev. 3 - 2 

August 2010 © Diodes Incorporated 

**DSS30101L** 

## **Maximum Ratings** @TA = 25°C unless otherwise specified 

|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol **|**Value**|**Unit**|
|Collector-Base Voltage|VCBO|50|V|
|Collector-Emitter Voltage|VCEO|30|V|
|Emitter-Base Voltage|VEBO|5|V|
|Peak Pulse Current|ICM|2|A|
|Continuous Collector Current|IC|1|A|



## **Thermal Characteristics** 

|**Thermal Characteristics**||||
|---|---|---|---|
|**Characteristic**|**Symbol **|**Value**|**Unit**|
|Power Dissipation(Note 3) @TA= 25°C|PD|600|mW|
|Thermal Resistance,Junction to Ambient Air(Note 3) @TA= 25°C|= 25°C<br>RθJA|209|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C|



Notes: 3.  Device mounted on FR-4 PCB MRP 

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0.8 400<br>Single Pulse<br>RθJA(t) = r(t) * RθJA<br>0.6 300 RθJA = 175 ° C/W<br>TJ - TA = P * RθJA(t)<br>Duty Cycle, D = t1/t2<br>0.4 200<br>0.2 R θJA  = 209°C/W 100<br>0 0<br>0 20 40 60 80 100 120 140 160 0.00001 0.001 0.1 10 1,000<br>TA, AMBIENT TEMPERATURE (°C) t1, PULSE DURATION TIME (s)<br>Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3) Fig. 2 Single Pulse Maximum Power Dissipation<br>1<br>D = 0.9<br>D = 0.7<br>D = 0.5<br>0.1<br>D = 0.3<br>D = 0.1<br>RθJA(t) = r(t) * RθJA<br>D = 0.05 R θJA  = 175°C/W<br>0.01<br>D = 0.02 P(pk)<br>t 1<br>D = 0.01 t 2<br>D = 0.005 TJ - TA = P  *  RθJA(t)<br>Duty Cycle, D = t 1 /t 2<br>D = Single Pulse<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 10,000<br>t1, PULSE DURATION TIME (s)<br>Fig. 3 Transient Thermal Response<br>, POWER DISSIPATION (W)<br>D<br>P<br>P(pk), PEAK TRANSIENT  POWER (W)<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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DSS30101L Document number: DS31588 Rev. 3 - 2 

August 2010 © Diodes Incorporated 

www.diodes.com 

**DSS30101L** 

## **Electrical Characteristics** @TA = 25°C unless otherwise specified 

|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|---|---|---|---|
|||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**||**Unit**|**Test Conditions**|
|Collector-Base Breakdown Voltage|V(BR)CBO|50|⎯|⎯||V|IC= 100μA|
|Collector-Emitter Breakdown Voltage(Note 4)|V(BR)CEO|30|⎯|⎯||V|IC= 10mA|
|Emitter-Base Breakdown Voltage|V(BR)EBO|5|⎯|⎯||V|IE= 100μA|
|Collector-Base Cutoff Current|ICBO|⎯|⎯|100||nA|VCB= 30V,IE= 0|
|||⎯|⎯|50||μA|VCB= 30V,IE= 0,TA= 150°C|
|Emitter-Base Cutoff Current|IEBO|⎯|⎯|100||nA|VEB= 4V,IC= 0|
|DC Current Gain (Note 4)|hFE|300|⎯|⎯||⎯|VCE= 5V,IC= 50mA|
|||300|450|900|||VCE= 5V,IC= 0.5A|
|||200|⎯|⎯|||VCE= 5V,IC= 1A|
|Collector-Emitter Saturation Voltage (Note 4)|VCE(sat)|⎯|⎯|75||mV|IC= 0.1A,IB= 1mA|
|||⎯|⎯|125|||IC= 0.5A,IB= 50mA|
|||⎯|⎯|200|||IC= 1.0A,IB= 100mA|
|Equivalent On-Resistance(Note 4)|RCE(sat)|⎯|⎯|200||mΩ|IE= 1A,IB= 100mA|
|Base-Emitter Saturation Voltage(Note 4)|VBE(sat)|⎯|0.93|1.1||V|IC= 1A,IB= 100mA|
|Base-Emitter Turn-on Voltage(Note 4)|VBE(on)|⎯|0.80|1.1||V|VCE= 2V,IC= 1A|
|Transition Frequency|fT|100|250|⎯||MHz|VCE= 5V, IC= 100mA,<br>f = 100MHz|
|Output Capacitance|Cobo|⎯|9|15||pF|VCB= 10V,f = 1MHz|
|Input Capacitance|Cibo|⎯|65|⎯||pF|VEB= 5V,f = 1MHz|
|Turn-On Time|ton|⎯|57|⎯|ns||VCC= 5V, IC= 500mA,<br>IB1= -IB2= 50mA|
|DelayTime|td|⎯|19|⎯|ns|||
|Rise Time|tr|⎯|38|⎯|ns|||
|Turn-Off Time|toff|⎯|340|⎯|ns|||
|Storage Time|ts|⎯|315|⎯|ns|||
|Fall Time|tf|⎯|25|⎯|ns|||



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Notes:  4.  Measured under pulsed conditions.  Pulse width = 300μs.  Duty cycle ≤2%.<br>2.2 1,200<br>2.0 1,100<br>1.8 IB = 5mA 1,000 TA = 150°C<br>1.6 I B = 4mA 900 T A  = 125°C<br>1.4 800 T A  = 85°C<br>IB = 3mA 700<br>1.2<br>1.0 IB = 2mA 600500 TA = 25°C<br>0.8<br>400<br>0.6 300 TA = -55 ° C<br>IB = 1mA<br>0.4 200<br>0.2 100<br>0 0<br>0 1 2 3 4 5 0.001 0.01 0.1 1 10<br>VCE, COLLECTOR-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A)<br>Fig. 4 Typical Collector Current  Fig. 5 Typical DC Current Gain vs. Collector Current<br>vs. Collector-Emitter Voltage<br>[1.]<br>DSS30101L 3 of 6<br>Document number: DS31588 Rev. 3 - 2  www.diodes.com<br>, DC CURRENT GAIN<br>FE<br>h<br>, COLLECTOR CURRENT (A)<br>IC<br>**----- End of picture text -----**<br>


August 2010 © Diodes Incorporated 

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DSS30101L<br>0.3 500<br>IC/IB = 10 450 IC/IB = 10<br>400<br>350<br>0.2<br>300<br>250<br>200 TA = 125°C<br>0.1 TA = 150°C<br>150 TA = 85°C<br>T A  = 150°C<br>TA = 125°C TA = 85 ° C 100 TA = 25°C<br>T A  = 25°C TA = -55°C<br>50<br>T A  = -55°C<br>uk<br>0 0<br>0.001 0.01 0.1 1 10 0.01 0.1 1 10<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Fig. 6 Typical Collector-Emitter Saturation Voltage Fig. 7 Typical Equivalent On-Resistance<br>vs. Collector Current vs. Collector Current<br>1.2 1.4<br>VCE = 5V<br>1.0 1.2 I C /I B  = 10<br>1.0<br>0.8<br>T A  = -55°C 0.8<br>0.6 T A  = -55°C<br>TA = 25°C 0.6 T A  = 25°C<br>0.4 TA = 85°C<br>T A = 85°C 0.4 TA = 125°C<br>0.2 a T A = 150°C TA = 125°C T A  = 150°C<br>0.2<br>0 0<br>0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Fig. 8 Typical Base-Emitter Turn-On Voltage  Fig. 9 Typical Base-Emitter Saturation Voltage<br>vs. Collector Current vs. Collector Current<br>150<br>120 f = 1MHz<br>90<br>60 Cibo<br>30<br>0 Cobo<br>0 5 10 15 20 25 30 35 40<br>VR, REVERSE VOLTAGE (V)<br>Fig. 10 Typical Capacitance Characteristics<br>VOLTAGE (V)<br>, COLLECTOR-EMITTER<br>SATURATION<br>CE(SAT) , EQUIVALENT ON-RESISTANCE (V)<br>V CE(SAT)<br>R<br>, BASE-EMITTER TURN-ON VOLTAGE (V) , BASE-EMITTER SATURATION VOLTAGE (V)<br>BE(ON)<br>V<br>BE(SAT)<br>V<br>CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


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DSS30101L Document number: DS31588 Rev. 3 - 2 

August 2010 © Diodes Incorporated 

www.diodes.com 

**DSS30101L** 

## **Package Outline Dimensions** 

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A SOT-23<br>Dim  Min  Max  Typ<br>A  0.37  0.51  0.40<br>B  1.20 1.40 1.30<br>B C C 2.30 2.50 2.40<br>D  0.89 1.03 0.915<br>F  0.45 0.60 0.535<br>amd ====<br>G  1.78  2.05  1.83<br>= H H  2.80  3.00  2.90<br>J 0.013 0.10 0.05<br>K K1 M K  0.903 1.10 1.00<br>D K1  -  -  0.400<br>fe, J F G L =EEE L  0.45 0.61  0.55<br>_ ( ++ M  0.085  0.18  0.11<br>α 0°  8°  -<br>All Dimensions in mm<br>( Ga a a ee<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

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Y<br>Z<br>T7_E}-+ C<br>X E<br>WalonRab<br>**----- End of picture text -----**<br>


|**Dimensions V**|**Value (in mm)**|
|---|---|
|**Z**|2.9|
|**X**|0.8|
|**Y**|0.9|
|**C**|2.0|
|**E**|1.35|



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DSS30101L Document number: DS31588 Rev. 3 - 2 

August 2010 © Diodes Incorporated 

www.diodes.com 

**DSS30101L** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2010, Diodes Incorporated 

**www.diodes.com** 

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DSS30101L Document number: DS31588 Rev. 3 - 2 

August 2010 © Diodes Incorporated