DSS2515M-7B

**DSS2515M** [d **15V NPN LOW VCE(sat) TRANSISTOR IN DFN1006** 

## **Features** 

## **Mechanical Data** 

- BVCEO  > 15V 

- IC = 500mA High Collector Current 

- ICM = 1A Peak Pulse Current 

- PD = 1000mW Power Dissipation 

- Low Collector-Emitter Saturation Voltage, VCE(sat) 

- 0.60mm[2] Package Footprint, 13 times Smaller than SOT23 

- 0.5mm Height Package Minimizing Off-Board Profile 

   - Case: X1-DFN1006-3 

   - Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminals: Finish  NiPdAu, Solderable per MIL-STD-202, Method 208 @ **e4** 

   - Weight: 0.0009 grams (Approximate) 

- Complementary PNP Type DSS3515M 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

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X1-DFN1006-3<br>**----- End of picture text -----**<br>


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Bottom View<br>**----- End of picture text -----**<br>


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C<br>B<br>B<br>C<br>E<br>E<br>Top View<br>Device Symbol<br>Device Schematic<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|
|---|---|---|---|---|
||||||
|**Product**|**Marking**|**Reel size(inches)**|**Tape width(mm)**|**Quantity per reel**|
|DSS2515M-7|TA|7|8mm|3,000|
|DSS2515M-7B|TA|7|8mm|10,000|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

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TA From date code 1527 (YYWW),  TA<br>this changes to:<br>DSS2515M-7<br>Top View  Top View<br>Dot Denotes Collector Side  Bar Denotes Base and Emitter Side<br>Het H+ Ht<br>1 6 6) ‘OoHE<br>TA<br>DSS2515M-7B<br>Top View<br>Bar Denotes Base and Emitter Side  TA = Part Marking Code<br>ja~-p-e>)>oo!<->}<br>TA  TA  TA<br>TA  TA  TA<br>TA  TA  TA<br>**----- End of picture text -----**<br>


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DSS2515M Document number: DS31816 Rev. 4 - 2 

May 2015 © Diodes Incorporated 

**DSS2515M** 

**Absolute Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

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|---|---|---|---|
|Characteristic|Symbol|Value|Unit|
|Collector-Base Voltage|VCBO|15|V|
|Collector-Emitter Voltage|VCEO|15|V|
|Emitter-Base Voltage|VEBO|6|V|
|Collector Current - Continuous|IC|500|mA|
|Peak Pulse Collector Current|ICM|1|A|
|Peak Base Current|IBM|100|mA|

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**Thermal Characteristics Characteristic Symbol Value Unit** (Note 5) 400 Power Dissipation PD mW (Note 6) 1,000 Thermal Resistance, Junction to Ambient ((Note 5Note 6)) RJA 310 120 C/W ~~ee~~ Thermal Resistance, Junction to Lead (Note 7) RJL 120 °C/W Operating and Storage and Temperature Range TJ, TSTG -55 to +150 °C ~~===ee ee~~ **ESD Ratings** (Note 8) **Characteristic Symbol Value Unit JEDEC Class** Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V B 

Notes: 5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink. 

6. Same as Note 5, except the exposed collector pad is mounted on 25mm x 25mm 2oz copper. 

7. Thermal resistance from junction to solder-point (on the exposed collector pad). 

8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 

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DSS2515M Document number: DS31816 Rev. 4 - 2 

May 2015 © Diodes Incorporated 

**DSS2515M** 

## **Thermal Characteristics** 

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1 D = 0.9<br>Ee D = 0.7 th rTret<br>FTC D = 0.5 HT rT ITT<br>MIT D = 0.3 TT TT Teme TTI TTI PAI<br>0.1 PTYEE D = 0.1 SLITN ee OTUUM LUM ETI ETT ATTN Tl<br>EEEOEE<br>Fy D = 0.05 ttt eT<br>SarA /<br>D = 0.02<br>N O( 655 (11 MAUI ANAAT/QROTUORATU/ OMANI ONO NAT<br>0.01 Se UATE TTI TT TT TEA TTT<br>SE D = 0.01<br>EH D = 0.005 ere -E —PeEHEEe eee RJA(t) = r(t)  ae * RJA<br>FRA TUT<br>2A CU<br>RJA = 310°C/W<br>D = Single Pulse Duty Cycle, D = t1/ t2<br>0.001<br>0.000001 0.0001 0.01 1 100 10,000<br>t1, PULSE DURATION TIME (sec)<br>Fig. 1 Transient Thermal Resistance<br>1,000<br>Single Pulse<br>RJA  = 310°C/W<br>100<br>RJA(t)  = r(t) * RJA<br>TJ - TA = P * RJA(t)<br>10<br>1 Wet |<br>0.1<br>1E-06 0.0001 0.01 1 100 10,000<br>t1, PULSE DURATION TIME (sec)<br>Fig. 2 Single Pulse Maximum Power Dissipation<br>, PEAK TRANSIENT POIWER (W)<br>(PK)<br>P<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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DSS2515M Document number: DS31816 Rev. 4 - 2 

May 2015 © Diodes Incorporated 

**DSS2515M** 

**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

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|---|---|---|---|---|---|---|---|---|
|Characteristic|Symbol|Min|Typ|Max|Unit|Test Condition|
|OFF CHARACTERISTICS|
|Collector-Base Breakdown Voltage|BVCBO|15|||V|IC = 100µA, IE = 0|
|_—__—_———|Collector-Emitter Breakdown Voltage (Note 9)|BVCEO|15||—————||V|IC = 10mA, IB = 0|
|a|Emitter-Base Breakdown Voltage|BVEBO|6|||V|IE = 100µA, IC = 0|
|TL|Collector Cutoff Current|ICBO|||I|100 50|nA µA|VVCBCB = 15V, I = 15V, IE E = 0 = 0, TA = +150°C|
|fe|Emitter Cutoff Current|IEBO|||100|nA|VEB = 5V, IC = 0|
|ON CHARACTERISTICS (Note 9)|
|200|||VCE = 2V, IC = 10mA|
|DC Current Gain|hFE|150||||VCE = 2V, IC = 100mA|
|90|||VCE = 2V, IC = 500mA|
|—|
|||25|IC = 10mA, IB = 0.5mA|
|Collector-Emitter Saturation Voltage|VCE(sat)|||150|mV|IC = 200mA, IB = 10mA|
|||250|IC = 500mA, IB = 50mA|
|ee|Collector-Emitter Saturation Resistance|RCE(sat)|||500|mΩ|IC = 500mA, IB = 50mA|
|Base-Emitter Saturation Voltage|VBE(sat)|||1.1|V|IC = 500mA, IB = 50mA|
|a|Base-Emitter Turn On Voltage|VBE(on)|||0.9|V|VCE = 2V, IC = 100mA|
|SMALL SIGNAL CHARACTERISTICS|
|Output Capacitance|Cobo|||6|pF|VCB = 10V, f = 1.0MHz|
|———|Current Gain-Bandwidth Product|fT|250|||MHz|VCE = 5V, IC = 100mA, f = 100MHz|
|Note:|9. Measured under pulsed conditions. Pulse width ≤ 300µs.  Duty cycle ≤ 2%.|

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DSS2515M Document number: DS31816 Rev. 4 - 2 

May 2015 © Diodes Incorporated 

**DSS2515M** 

## **Typical Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

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1.0 800<br>700<br>TA = 150°C<br>0.8 I B = 5mA<br>600<br>— IB = 4mA oe TA = 125°C | Il<br>0.6 I B  = 3mA 500 T A  = 85°C<br>Cc NN<br>pia IB = 2mA 400 EEN T A  = 25°C<br>0.4 ft — moot N Il<br>300<br>-—— Full COONS<br>IB = 1mA<br>200 T A  = -55°C<br>—— PL PET ill<br>0.2<br>100<br>atti mati an<br>0 0<br>0 1 2 1 10 100 1,000<br>VCE, COLLECTOR-EMITTER VOLTAGE (V) -IC, COLLECTOR CURRENT (mA)<br>Fig. 4 Typical Collector Current  Fig. 5 Typical DC Current Gain vs. Collector Current<br>vs. Collector-Emitter Voltage<br>1 | 1.2<br>[| TTyy<br>I C /I B  = 20 IC/IB = 20<br>FeeLTT SeenPT) a A aLZ<br>AA) 1.0 eared) ae<br>0.8<br>TA = -55°C<br>0.1 aES HH a Seteee]<br>0.6 TA = 25°C<br>esl aeeaalliammaniie T A  = 150°C al rR TA = 85°C<br>CTTTE T A  = 125°C iy, ATYf TA = 85°C 0.4 Urs et > asta  sane TA = 150°C TA = 125°C<br>TA = 25°C<br>0.01 pier TA = -55°C 0.2 Et MT<br>0.1 1 10 100 1,000 0.1 1 10 100 1,000<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Fig. 6 Typical Collector-Emitter Saturation Voltage Fig. 7 Typical Base-Emitter Saturation Voltage<br>vs. Collector Current vs. Collector Current<br>1.2 1,000<br>VCE = 2V I C /I B  = 20<br>| mI<br>1.0<br>100<br>0.8<br>Sn T eee A = -55°C EON<br>10<br>0.6 FH TA = 25°C ret I<br>PT lll err ECON oy<br>0.4 T A  = 85°C 1 TA = -55°C<br>eeeae TA eet  = 150°C TA = 125°C all SSSie T A rrrnl  = 25°C Nee T A pee  = 85°C TA = 150°C<br>0.2 ean 0.1 TA = 125°C<br>0.1 leer 1 10 100 1,000 0.1 CCeT 1 10 100 1,000<br>IC, COLLECTOR CURRENT (mA) -IC, COLLECTOR CURRENT (mA)<br>Fig. 8 Typical Base-Emitter Turn-On Voltage  Fig. 9 Typical Collector-Emitter Saturation Resistance<br>vs. Collector Current vs. Collector Current<br>CE(SAT)<br>)<br> (<br>, COLLECTOR-EMITTER<br>-R SATURATION RESISTANCE<br>VOLTAGE (V)<br>, COLLECTOR-EMITTER<br>SATURATION<br>CE(SAT)<br>V<br>, DC CURRENT GAIN<br>h<br>FE<br>, COLLECTOR CURRENT (A)<br>IC<br>BE(SAT)<br>, BASE-EMITTER SATURATION VOLTAGE (V)<br>V<br>BE(ON)<br>, BASE-EMITTER TURN-ON VOLTAGE (V)<br>V<br>**----- End of picture text -----**<br>


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DSS2515M Document number: DS31816 Rev. 4 - 2 

May 2015 © Diodes Incorporated 

www.diodes.com 

**DSS2515M** 

## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 

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A X1-DFN1006-3<br>A1<br>Dim  Min  Max Typ<br>A  0.47  0.53 0.50<br>Seating Plane A1  0.00 0.05 0.03<br>b 0.10 0.20 0.15<br>D<br>Pin #1 ID b b2  0.45 0.55 0.50<br>D  0.95 1.075 1.00<br>E  0.55 0.675 0.60<br>e  -  -  0.35<br>L1  0.20 0.30 0.25<br>anal | =e = ===o<br>E b2 e L2  0.20 0.30 0.25<br>L3 -  -  0.40<br>z  0.02  0.08 0.05<br>All Dimensions in mm<br>z<br>3 L2 L3 L1 ====<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

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Y C<br>Y1<br>G2<br>‘al<br>X G1<br>ao X1<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value (in mm)**|
|---|---|
|**esos**<br>**C**|**aue()**<br>0.70|
|**C**<br>**G1**|0.70<br>0.30|
|**G2**|0.20|
|**X**|0.40|
|**X1**|1.10|
|**Y**|0.25|
|**Y1**|0.70|



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DSS2515M Document number: DS31816 Rev. 4 - 2 

May 2015 © Diodes Incorporated 

**DSS2515M** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2015, Diodes Incorporated 

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DSS2515M Document number: DS31816 Rev. 4 - 2 

May 2015 © Diodes Incorporated