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DSP25-12A
Standard Recovery Diode, 1.2 kV, 28 A, Dual Series, 630 mV, 300 A
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type:
- Repetitive Reverse Voltage Vrrm Max:1.2kV; Forward Current If(AV):28A; Diode Configuration:Dual Series; Forward Voltage VF Max:630mV; Reverse Recovery Time trr Max:-; Forward Surge Current
- SVHC: No SVHC (17-Jan-2023)
- No. of Pins: 3Pins
- Product Range: DSP25
- Qualification: -
- Diode Case Style: TO-247AD
- Diode Configuration: Dual Series
- Forward Voltage Max: 630mV
- Forward Surge Current: 300A
- Reverse Recovery Time: -
- Average Forward Current: 28A
- Operating Temperature Max: 180°C
- Repetitive Peak Reverse Voltage: 1.2kV
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 2.44 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
**DSP25-12A** ## **Standard Rectifier** **VRRM** _**=**_ **2x 1200 V I FAV** _**=**_ **25 A VF** _**=**_ **1.16 V** ## Phase leg ## **Part number** ## **DSP25-12A** Backside: anode/cathode **==> picture [129 x 11] intentionally omitted <==** **----- Start of picture text -----**<br> 1 2 3<br>**----- End of picture text -----**<br> ## **Features / Advantages:** - Planar passivated chips - Very low leakage current - Very low forward voltage drop ## **Applications:** - Diode for main rectification - For single and three phase bridge configurations ## **Package:** TO-247 - Industry standard outline - RoHS compliant - Epoxy meets UL 94V-0 - Improved thermal behaviour ## **Disclaimer Notice** Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191128b © 2019 IXYS all rights reserved **DSP25-12A** |**Ratings**<br>**Rectifier**|**Ratings**<br>**Rectifier**|**Ratings**<br>**Rectifier**|**Ratings**<br>**Rectifier**|**Ratings**<br>**Rectifier**|**Ratings**<br>**Rectifier**| |---|---|---|---|---|---| |**Symbol**<br>**Definition**<br>**Conditions**||**min.**|**typ.**|**max.**|**Unit**| |**VRSM**<br>_max. non-repetitive reverse blocking voltage_<br>T = 25°C<br>VJ||||1300|V| |**VRRM**<br>_max. repetitive reverse blocking voltage_<br>T = 25°C<br>VJ||||1200|V| |**IR**<br>_reverse current_|V = V<br>R<br>T = 25°C<br>VJ<br>T = °C<br>VJ<br>V = V<br>R<br>1200<br>150<br>1200|||40<br>1.5|mA<br>µA| |**VF**<br>_forward voltage drop_|T = 25°C<br>VJ<br>I = A<br>F<br>25<br>I = A<br>F<br>50|||1.23<br>1.47|V<br>V| ||T = °C<br>VJ<br>I = A<br>F<br>25<br>I = A<br>F<br>50<br>150|||1.16<br>1.50|V<br>V| |**I**<br>**FAV**<br>_average forward current_|T = °C<br>C<br>135<br>T = °C<br>VJ<br>175<br>180° sine|||25|A| |**VF0**<br>T = °C<br>VJ<br>175<br>**rF**<br>_threshold voltage_<br>_slope resistance_<br>_for power loss calculation only_||||0.81<br>13.8|V<br>mΩ| |**R**<br>_thermal resistance junction to case_<br>**thJC**||||0.9|K/W| |**R**<br>_thermal resistance case to heatsink_<br>**thCH**|||0.3||K/W| |**Ptot**<br>_total power dissipation_|T = 25°C<br>C|||160|W| |**IFSM**<br>_max. forward surge current_|t = 10 ms; (50 Hz), sine<br>T = 45°C<br>VJ<br>V = 0 V<br>R<br>t = 8,3 ms; (60 Hz), sine|||300<br>325|A<br>A| ||T = °C<br>VJ<br>150<br>V = 0 V<br>R<br>t = 10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine|||255<br>275|A<br>A| |**I²t**<br>_value for fusing_|T = 45°C<br>V = 0 V<br>t = 10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine<br>VJ<br>R|||450<br>440|A²s<br>A²s| ||T = °C<br>150<br>V = 0 V<br>t = 10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine<br>VJ<br>R|||325<br>315|A²s<br>A²s| |**CJ**<br>_junction capacitance_|V = V;<br>400<br>T = 25°C<br>f = 1 MHz<br>R<br>VJ||10||pF| **==> picture [307 x 253] intentionally omitted <==** IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191128b © 2019 IXYS all rights reserved **DSP25-12A** |**Ratings**<br>**Package**<br>**TO-247**|**Ratings**<br>**Package**<br>**TO-247**|**Ratings**<br>**Package**<br>**TO-247**|**Ratings**<br>**Package**<br>**TO-247**|**Ratings**<br>**Package**<br>**TO-247**| |---|---|---|---|---| |**Symbol**<br>**Definition**<br>**Conditions**|**min.**|**typ.**|**max.**|**Unit**| |**I RMS**<br>_RMS current_<br>per terminal|||70|A| |**TVJ**<br>_virtual junction temperature_|-40||175|°C| |**Top**<br>_operation temperature_|-40||150|°C| |**Tstg**<br>_storage temperature_|-40||150|°C| |**Weight**||6||g| |**M D**<br>_mounting torque_<br>**FC**<br>_mounting force with clip_|0.8||1.2|| ||20|||| ## Product Marking **==> picture [114 x 130] intentionally omitted <==** **----- Start of picture text -----**<br> Logo IXYS<br>Part Number XXXXXXXXX<br>Date Code yywwZ<br>1234<br>Lot#<br>Location<br>**----- End of picture text -----**<br> **==> picture [215 x 78] intentionally omitted <==** |**Ordering**||**Ordering Number**|**Marking on Product**|**Marking on Product**|**Delivery Mode**|**Quantity**|**Code No.**| |---|---|---|---|---|---|---|---| |Standard||DSP25-12A|DSP25-12A||Tube|30|463604| ||||||||| |||**Similar Part**|**Package**|**Voltage class**|||| |||DSP25-12AT|TO-268AA(D3Pak) (2)|1200|||| |||DSP25-16A|TO-247AD(3)|1600|||| |||DSP25-16AR|ISOPLUS247(3)|1600|||| |||DSP25-16AT|TO-268AA(D3Pak) (2)|1600|||| |**Equivalent Circuits for Simulation**<br>T =<br>VJ<br>°C<br>_* on die level_<br>175|**Equivalent Circuits for Simulation**<br>T =<br>VJ<br>°C<br>_* on die level_<br>175| |---|---| |I|V0<br>~~R~~0| IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191128b © 2019 IXYS all rights reserved **DSP25-12A** **==> picture [509 x 15] intentionally omitted <==** **----- Start of picture text -----**<br> Outlines TO-247<br>**----- End of picture text -----**<br> **==> picture [510 x 483] intentionally omitted <==** **----- Start of picture text -----**<br> ||||||||| |---|---|---|---|---|---|---|---| |A|D2| |E|A2|Ø P|Ø P1| |Q|S|Sym.|Inches|Millimeter| |min.|max.|min.|max.| |A|0.185|0.209|4.70|5.30| |D1|A1|0.087|0.102|2.21|2.59| |D|A2|0.059|0.098|1.50|2.49| |D|0.819|0.845|20.79|21.45| |2x E2| |E|0.610|0.640|15.48|16.24| |4|E2|0.170|0.216|4.31|5.48| |e|0.215 BSC|5.46 BSC| |1|2|3|L|0.780|0.800|19.80|20.30| |L1|-|0.177|-|4.49| |L1|E1|Ø P|0.140|0.144|3.55|3.65| |Q|0.212|0.244|5.38|6.19| |S|0.242 BSC|6.14 BSC| |L|b|0.039|0.055|0.99|1.40| |b2|0.065|0.094|1.65|2.39| |b4|0.102|0.135|2.59|3.43| |c|0.015|0.035|0.38|0.89| |2x b2| |C|D1|0.515|-|13.07|-| |3x b| |D2|0.020|0.053|0.51|1.35| |b4|A1| |E1|0.530|-|13.45|-| |2x e|Ø P1|-|0.29|-|7.39| **----- End of picture text -----**<br> **==> picture [509 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> 1 2 3<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191128b © 2019 IXYS all rights reserved **DSP25-12A** ## **Rectifier** **==> picture [508 x 660] intentionally omitted <==** **----- Start of picture text -----**<br> 60 300 10 [3]<br>50 Hz, 80% VRRM VR = 0 V<br>50<br>T VJ = 45°C<br>40 IFSM<br>IF TVJ = 45°C I [2] t TVJ = 150°C<br>30 200 10 [2]<br>[A] [A] [A [2] s]<br>20<br>TVJ = 125°C TVJ = 150°C<br>10<br>TVJ = 25°C<br>0 100 10 [1]<br>0.5 1.0 1.5 0.001 0.01 0.1 1 1 2 3 4 5 6 7 8 910<br>VF [V] t [s] t [ms]<br>Fig. 1 Forward current versus Fig. 2 Surge overload current Fig. 3 I [2] t versus time per diode<br>voltage drop per diode<br>40 80<br>RthJA:<br>0.6 KW DC =<br>0.8 KW 1<br>30 1 KW 60 0.5<br>2 KW 0.4<br>4 KW 0.33<br>Ptot DC = 8 KW IF(AV)M 0.17<br>0.08<br>1<br>20 40<br>0.5<br>[W] 0.4 [A]<br>0.33<br>0.17<br>10 0.08 20<br>0 0<br>0 5 10 15 20 25 30 0 50 100 150 200 0 50 100 150 200<br>IF(AV)M [A] Tamb [[°C]] TC [°C]<br>Fig. 4 Power dissipation vs. direct output current and ambient temperature Fig. 5 Max. forward current vs.<br>case temperature<br>1.0<br>0.8<br>ZthJ<br>0.6 Constants for ZthJC calculation:<br>[K/W] i Rthi (K/W) ti (s)<br>0.4 1 0.03 0.0004<br>2 0.08 0.002<br>0.2 3 0.2 0.003<br>4 0.39 0.03<br>5 0.2 0.29<br>0.0<br>1 10 100 1000 10000<br>t [ms]<br>Fig. 6 Transient thermal impedance junction to case<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191128b © 2019 IXYS all rights reserved
Updated at March 31, 2026
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