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DSI30-12AS-TRL
Standard Recovery Diode, 1.2 kV, 30 A, Single Dual Anode, 1.29 V, 325 A
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- Manufacturer: LITTELFUSE
- Product type: Standard Recovery Rectifier Diodes
- SVHC: To Be Advised
- No. of Pins: 3Pins
- Product Range: -
- Qualification: -
- Diode Case Style: TO-263 (D2PAK)
- Diode Configuration: Single Dual Anode
- Forward Voltage Max: 1.29V
- Forward Surge Current: 325A
- Reverse Recovery Time: -
- Average Forward Current: 30A
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 1.2kV
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.37 € |
| Current stock | 500+ |
| Lead time | 30 days |
Datasheet
## **DSI30-12AS** ## **Standard Rectifier** **VRRM** _**=**_ **1200 V I FAV** _**=**_ **30 A VF** _**=**_ **1.25 V** ## Single Diode ## **Part number** ## **DSI30-12AS** _Marking on Product: DSI30-12AS_ Backside: cathode 1 2/4 3 < ~~+t+-°~~ ## **Features / Advantages:** - Planar passivated chips - Very low leakage current - Very low forward voltage drop ## **Applications:** - Diode for main rectification - For single and three phase bridge configurations ## **Package:** TO-263 (D2Pak) - Industry standard outline - RoHS compliant - Epoxy meets UL 94V-0 - Improved thermal behaviour ## **Disclaimer Notice** Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20190220b © 2019 IXYS all rights reserved **DSI30-12AS** |**Ratings**<br>**Rectifier**|**Ratings**<br>**Rectifier**|**Ratings**<br>**Rectifier**|**Ratings**<br>**Rectifier**|**Ratings**<br>**Rectifier**|**Ratings**<br>**Rectifier**| |---|---|---|---|---|---| |**Symbol**<br>**Definition**<br>**Conditions**||**min.**|**typ.**|**max.**|**Unit**| |**VRSM**<br>_max. non-repetitive reverse blocking voltage_<br>T = 25°C<br>VJ||||1300|V| |**VRRM**<br>_max. repetitive reverse blocking voltage_<br>T = 25°C<br>VJ||||1200|V| |**IR**<br>_reverse current_|V = V<br>R<br>T = 25°C<br>VJ<br>T = °C<br>VJ<br>V = V<br>R<br>1200<br>150<br>1200|||40<br>1.5|mA<br>µA| |**VF**<br>_forward voltage drop_|T = 25°C<br>VJ<br>I = A<br>F<br>30<br>I = A<br>F<br>60|||1.29<br>1.60|V<br>V| ||T = °C<br>VJ<br>I = A<br>F<br>30<br>I = A<br>F<br>60<br>150|||1.25<br>1.66|V<br>V| |**I**<br>**FAV**<br>_average forward current_|T = °C<br>C<br>130<br>T = °C<br>VJ<br>175<br>d =<br>rectangular<br>0.5|||30|A| |**VF0**<br>T = °C<br>VJ<br>175<br>**rF**<br>_threshold voltage_<br>_slope resistance_<br>_for power loss calculation only_||||0.82<br>14.1|V<br>mΩ| |**R**<br>_thermal resistance junction to case_<br>**thJC**||||0.9|K/W| |**R**<br>_thermal resistance case to heatsink_<br>**thCH**|||0.25||K/W| |**Ptot**<br>_total power dissipation_|T = 25°C<br>C|||160|W| |**IFSM**<br>_max. forward surge current_|t = 10 ms; (50 Hz), sine<br>T = 45°C<br>VJ<br>V = 0 V<br>R<br>t = 8,3 ms; (60 Hz), sine|||300<br>325|A<br>A| ||T = °C<br>VJ<br>150<br>V = 0 V<br>R<br>t = 10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine|||255<br>275|A<br>A| |**I²t**<br>_value for fusing_|T = 45°C<br>V = 0 V<br>t = 10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine<br>VJ<br>R|||450<br>440|A²s<br>A²s| ||T = °C<br>150<br>V = 0 V<br>t = 10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine<br>VJ<br>R|||325<br>315|A²s<br>A²s| |**CJ**<br>_junction capacitance_|V = V;<br>400<br>T = 25°C<br>f = 1 MHz<br>R<br>VJ||10||pF| **==> picture [307 x 253] intentionally omitted <==** IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20190220b © 2019 IXYS all rights reserved **DSI30-12AS** |**Ratings**<br>**Package**<br>**TO-263 (D2Pak)**|**Ratings**<br>**Package**<br>**TO-263 (D2Pak)**|**Ratings**<br>**Package**<br>**TO-263 (D2Pak)**|**Ratings**<br>**Package**<br>**TO-263 (D2Pak)**|**Ratings**<br>**Package**<br>**TO-263 (D2Pak)**|**Ratings**<br>**Package**<br>**TO-263 (D2Pak)**| |---|---|---|---|---|---| |**Symbol**<br>**Definition**<br>**Conditions**||**min.**|**typ.**|**max.**|**Unit**| |**I RMS**<br>_RMS current_<br>per terminal<br>**_1)_**||||35|A| |**TVJ**<br>_virtual junction temperature_||-40||175|°C| |**Top**<br>_operation temperature_||-40||150|°C| |**Tstg**<br>_storage temperature_||-40||150|°C| |**Weight**|||2||g| |**FC**<br>_mounting force with clip_||20||N<br>60|| |1)IRMSis typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product<br>with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact.|||||| 1) IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact. ## Product Marking **==> picture [135 x 120] intentionally omitted <==** **----- Start of picture text -----**<br> Part No. XXXXXXXXX<br>Logo IXYS Zyyww<br>Assembly Line<br>Date Code 000000<br>Assembly Code<br>**----- End of picture text -----**<br> **==> picture [215 x 78] intentionally omitted <==** |**Ordering**||**Ordering Number**|**Marking on Product**|**Marking on Product**|**Delivery Mode**|**Quantity**|**Code No.**| |---|---|---|---|---|---|---|---| |Standard||DSI30-12AS-TRL|DSI30-12AS||Tape & Reel|800|507511| |Alternativ|e|DSI30-12AS-TUB|DSI30-12AS||Tube|50|470988| ||||||||| |||**Similar Part**|**Package**|**Voltage class**|||| |||DSI30-12A|TO-220AC(2)|1200|||| |||DSI30-12AC|ISOPLUS220AC(2)|1200|||| |||DSI30-16AS|TO-263AB(D2Pak) (2)|1600|||| |||DSI30-16A|TO-220AC(2)|1600|||| |||DSI30-08AS|TO-263AB(D2Pak) (2)|800|||| |||DSI30-08A|TO-220AC(2)|800|||| |||DSI30-08AC|ISOPLUS220AC(2)|800|||| |**Equivalent Circuits for Simulation**<br>T =<br>VJ<br>175 °C<br>_* on die level_|**Equivalent Circuits for Simulation**<br>T =<br>VJ<br>175 °C<br>_* on die level_| |---|---| |I|V0<br>~~R~~0| IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20190220b © 2019 IXYS all rights reserved **DSI30-12AS** **==> picture [509 x 15] intentionally omitted <==** **----- Start of picture text -----**<br> Outlines TO-263 (D2Pak)<br>**----- End of picture text -----**<br> **==> picture [511 x 485] intentionally omitted <==** **----- Start of picture text -----**<br> Millimeter Inches<br>Dim.<br>min max min max<br>A 4.06 4.83 0.160 0.190<br>W A1 typ. 0.10 typ. 0.004<br>A A2 2.41 0.095<br>c2 Supplier� b 0.51 0.99 0.020 0.039<br>Option<br>E b2 1.14 1.40 0.045 0.055<br>c 0.40 0.74 0.016 0.029<br>c2 1.14 1.40 0.045 0.055<br>A1 D 8.38 9.40 0.330 0.370<br>D1 8.00 8.89 0.315 0.350<br>4 D2 2.5 0.098<br>1 2 3<br>E 9.65 10.41 0.380 0.410<br>E1 6.22 8.50 0.245 0.335<br>e 2,54 BSC 0,100 BSC<br>c e1 4.28 0.169<br>2x e 3x b2 2x b H 14.61 15.88 0.575 0.625<br>10.92 L 1.78 2.79 0.070 0.110<br>(0.430) mm (Inches) E1 L1 1.02 1.68 0.040 0.066<br>typ. typ.<br>W 0.040 0.002<br>0.02 0.0008<br>All dimensions conform with<br>and/or within JEDEC standard.<br>1.78<br>(0.07)<br>2.54 (0.100) Recommended min. foot print<br>L1<br>D1<br>D<br>H<br>L L2<br>9.02<br>(0.355)<br>3.81<br>(0.150)<br>3.05<br>(0.120)<br>**----- End of picture text -----**<br> **==> picture [509 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>2/4<br>3<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20190220b © 2019 IXYS all rights reserved **DSI30-12AS** ## **Rectifier** **==> picture [508 x 660] intentionally omitted <==** **----- Start of picture text -----**<br> 60 250 500<br>50 Hz, 80% VRRM VR = 0 V<br>50<br>400<br>40 200<br>IF IFSM TVJ = 45°C 300 TVJ = 45°C<br>30 I [2] t<br>[A] [A] 200<br>20 T VJ = 125°C 150 TVJ = 150°C<br>150°C TVJ = 150°C [A [2] s]<br>100<br>10<br>T VJ = 25°C<br>0 100 0<br>0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.001 0.01 0.1 1 1 2 3 4 5 6 7 8 910<br>VF [V] t [s] t [ms]<br>Fig. 1 Forward current versus Fig. 2 Surge overload current Fig. 3 I [2] t versus time per diode<br>voltage drop per diode<br>50 40<br>RthHA:<br>0.6 K/W<br>0.8 K/W<br>DC =<br>40 1 K/W<br>1 2 K/W 30<br>0.5 4 K/W<br>0.4 8 K/W<br>Ptot 30 0.33 IF(AV)M<br>0.17 DC =<br>20<br>0.08 1<br>[W] 20 [A] 0.5<br>0.4<br>0.33<br>10 0.17<br>10 0.08<br>0 0<br>0 10 20 30 0 50 100 150 200 0 50 100 150 200<br>IF(AV)M [A] Tamb [°C] TC [°C]<br>Fig. 4 Power dissipation vs. direct output current and ambient temperature Fig. 5 Max. forward current vs.<br>case temperature<br>1.0<br>0.8<br>0.6 Constants for ZthJC calculation:<br>ZthJC i Rthi (K/W) ti (s)<br>0.4 1 0.03 0.0004<br>[K/W] 2 0.08 0.002<br>3 0.2 0.003<br>0.2<br>4 0.39 0.03<br>5 0.2 0.29<br>0.0<br>1 10 100 1000 10000<br>t [ms]<br>Fig. 6 Transient thermal impedance junction to case<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20190220b © 2019 IXYS all rights reserved
Updated at April 22, 2026
Founded in 1927 and headquartered in Chicago, Illinois, Littelfuse is a premier global manufacturer of circuit protection, power control, and sensing technologies. Widely recognized for pioneering the first small, fast-acting protective fuse, the company has grown into an industry leader whose highly reliable components are essential to modern industrial, transportation, and consumer electronics applications worldwide. At the core of the Littelfuse portfolio is an expansive and industry-leading range of circuit protection solutions. This encompasses a massive selection of traditional fuses, fuse holders, and resettable PTC thermistor fuses designed to safely interrupt overcurrent conditions. To defend against electrical overstress, Littelfuse also provides advanced transient voltage suppression (TVS) technologies, including thousands of specialized TVS diodes, TVS varistors, and gas discharge tubes (GDTs) that ensure robust defense against voltage spikes and environmental hazards. Beyond its foundational protection components, Littelfuse manufactures a diverse array of discrete semiconductors, sensors, and switching devices. Engineers rely on their high-performance thyristors, including TRIACs and SCRs, alongside power-efficient Schottky diodes and MOSFETs for demanding power control applications. Complemented by precision proximity sensors and highly reliable reed and solid-state relays, Littelfuse delivers the critical building blocks required for secure, efficient, and complete system design.
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