DSEP30-12CR

**DSEP 30-12CR** 

Advanced Technical Information 

## **HiPerDynFRED[TM] with soft recovery (Electrically Isolated Back Surface)** 

|**VRSM**<br>**VRRM**<br>**Type**<br>**V**<br>**V**<br>~~a~~|
|---|
|**1200**<br>**1200**<br>**DSEP 30-12CR**|



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A C<br>Oy<br>**----- End of picture text -----**<br>


**IFAV = 30 A VRRM = 1200 V trr = 20 ns** 

## **ISOPLUS 247[TM]** 

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C<br>A<br>Isolated back surface *<br>**----- End of picture text -----**<br>


A = Anode, C = Cathode 

* Patent pending 

|**Symbol**|**Conditions**||**Maximum Ratings**|**Maximum Ratings**|
|---|---|---|---|---|
|**IFRMS**|||70|A|
|**IFAVM**|TC= 85°C; rectangular, d = 0.5||30|A|
|**IFRM**<br>**IFSM**|tP< 10 µs; rep. rating, pulse width limited by TVJM<br>TVJ= 45°C; tp= 10 ms (50 Hz), sine||tbd<br>250|A<br>A|
|**EAS**|TVJ= 25°C; non-repetitive||0.2|mJ|
|**IAR**|IAS= 1.3 A; L = 180 µH<br>VA= 1.25**·**VRtyp.; f = 10 kHz; repetitive||0.1|A|
|**TVJ**||-55...+175||°C|
|**TVJM**|||175|°C|
|**Tstg**<br>**Ptot**|TC= 25°C|-55...+150<br>165||°C<br>W|
|**VISOL**|50/60 Hz RMS; IISOL ≤1 mA||2.5|kV|
|Mounting force with clip<br>**Weight**|Mounting force with clip<br>typical|10...50/2...10<br>6||N/lb.<br>g|



## **Features** 

- G Silicon chip on Direct-Copper-Bond substrate 

- High power dissipation 

- Isolated mounting surface 

- 2500V electrical isolation 

- G Low cathode to tab capacitance (<25pF) 

- G International standard package 

- G Planar passivated chips 

- G Very short recovery time 

- G Extremely low switching losses 

- G Low IRM-values 

- G Soft recovery behaviour 

- G Epoxy meets UL 94V-0 

- G Isolated and UL registered E153432 

## **Applications** 

- G Antiparallel diode for high frequency switching devices 

- G Antisaturation diode 

- G Snubber diode 

|**Symbol**<br>**typ.**||
|---|---|
|**typ.**|**max.**|
|**IR**<br>x<br>TVJ= 25°C<br>VR = VRRM<br>TVJ= 150°C VR = VRRM|250<br>µA<br>2<br>mA|
|**VF**<br>y<br>IF= 30 A;<br>TVJ= 150°C<br>TVJ=   25°C|3.1<br>V<br>5.0<br>V|
|**RthJC**<br>**RthCH**<br>with heatsink compound<br>0.25|0.9<br>K/W<br>K/W|
|**trr**<br>IF= 1 A; -di/dt = 200 A/µs;<br>20<br>VR= 30 V; TVJ= 25°C|ns|
|**IRM**<br>VR= 100 V; IF= 50 A; -diF/dt = 100 A/µs<br>4.0<br>TVJ= 100°C|A|



Pulse test: x Pulse Width = 5 ms, Duty Cycle < 2.0 % y Pulse Width = 300 µs, Duty Cycle < 2.0 % 

Data according to IEC 60747 and per diode unless otherwise specified 

- G Free wheeling diode in converters and motor control circuits 

- G Rectifiers in switch mode power supplies (SMPS) 

- G Inductive heating 

- G Uninterruptible power supplies (UPS) 

- G Ultrasonic cleaners and welders 

## **Advantages** 

- G Avalanche voltage rated for reliable operation 

- G Soft reverse recovery for low EMI/RFI 

- G Low IRM reduces: 

- Power dissipation within the diode 

- Turn-on loss in the commutating switch 

- G ISOPLUS 247[TM ] package for clip or spring mounting 

## **Dimensions see IXYS CD 2000** 

IXYS reserves the right to change limits, test conditions and dimensions. 

© 2000 IXYS All rights reserved 

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