DSEP30-12AR

**DSEP 30-12A DSEP 30-12AR** 

## **HiPerFRED[TM] Epitaxial Diode with soft recovery** 

|**VRSM**|**VRRM**|**Type**||
|---|---|---|---|
|**V**|**V**|||
|**1200**|**1200**|**DSEP 30-12A**|**DSEP 30-12A**|
|**1200**|**1200**|**DSEP 30-12AR**|**DSEP 30-12AR**|



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A C<br>**----- End of picture text -----**<br>


**IFAV = 30 A VRRM = 1200  V trr = 40 ns** 

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TO-247 AD ISOPLUS 247 [TM]<br>Version A Version AR<br>C C<br>A A<br>C (TAB) TAB<br>**----- End of picture text -----**<br>


A = Anode, C = Cathode 

|**Symbol**|**Symbol**|**Conditions**|**Maximum Ratings**|**Maximum Ratings**|**Maximum Ratings**|
|---|---|---|---|---|---|
|**IFRMS**||||70|A|
|**IFAVM**||rectangular, d = 0.5; TC(Vers. A)   = 115°C||30|A|
|||TC(Vers. AR)= 110°C||||
|**IFSM**||TVJ= 45°C; tp= 10 ms (50 Hz), sine||200|A|
|**EAS**||TVJ= 25°C; non-repetitive||14|mJ|
|||IAS= 11.5 A; L = 180 µH||||
|**IAR**||VA= 1.25**·**VRtyp.; f = 10 kHz; repetitive||1.2|A|
|**TVJ**|||-55...+175||°C|
|**TVJM**||||175|°C|
|**Tstg**|||-55...+150||°C|
|**Ptot**||TC= 25°C||165|W|
|**Md ***||mounting torque|0.8...1.2||Nm|
|**FC**||mounting force with clip|20...120||N|
|**VISOL****||50/60 Hz RMS; IISOL ≤1 mA; leads-to-tab||2500|V~|
|**Weight**||typical||6|g|
|* Version A only; ** Version AR only||||||
|**Symbol**||**Conditions**|**Characteristic Values**|||
||||**typ.**|**max.**||
|**IR**|①|TVJ=   25°C; VR = VRRM||250|µA|
|||TVJ= 150°C;VR = VRRM||1|mA|
|**VF**|②|IF= 30 A;<br>TVJ= 150°C||1.79|V|
|||TVJ=   25°C||2.74|V|
|**RthJC**||Version A||0.9|K/W|
|||Version AR||1.1|K/W|
|**RthCH**|||0.25||K/W|
|**trr**||IF= 1 A; -di/dt = 200 A/µs;|40||ns|
|||VR= 30 V; TVJ= 25°C||||
|**IRM**||VR= 100 V; IF= 50 A; -diF/dt = 100 A/µs|8.5|11.4|A|
|||TVJ= 100°C||||



## **Features** 

- International standard package 

- Planar passivated chips 

- Very short recovery time 

- Extremely low switching losses 

- Low IRM-values 

- Soft recovery behaviour 

- Epoxy meets UL 94V-0 

- Version ..R isolated and UL registered E153432 

## **Applications** 

- Antiparallel diode for high frequency switching devices 

- Antisaturation diode 

- Snubber diode 

- Free wheeling diode in converters and motor control circuits 

- Rectifiers in switch mode power supplies (SMPS) 

- Inductive heating 

- Uninterruptible power supplies (UPS) 

- Ultrasonic cleaners and welders 

## **Advantages** 

- Avalanche voltage rated for reliable operation 

- Soft reverse recovery for low EMI/RFI 

- Low IRM reduces: 

- Power dissipation within the diode 

- Turn-on loss in the commutating switch 

## **Dimensions see Outlines.pdf** 

Pulse test: ① Pulse Width =   5 ms, Duty Cycle < 2.0% ② Pulse Width = 300 µs, Duty Cycle < 2.0% 

Data according to IEC 60747 and per diode unless otherwise specified. 

IXYS reserves the right to change limits, test conditions and dimensions. 

© 2005 IXYS All rights reserved 

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**DSEP 30-12A DSEP 30-12AR** 

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70 5 60<br>60A µC TVVJR = 100°C= 600V A TVVJR = 100°C= 600V<br>50<br>4<br>I A} F 50 Qr (oo) IRM +}<br>4030 ere_BYYEE TTTVJVJVJ=150°C=100°C=  25°C / 3 TE IIIFFF= 60A= 30A= 15A Wi/ 4030 eeee IIIFFF= 60A= 30A= 15A<br>WT) | 2<br>20<br>20 LP etOK 77.oo<br>L 1 ee EES<br>10 TAAL LS eA 10 (WaT<br>AL, —_ Co<br>0 Ta 0 LHI =O 0 ARR<br>0 1 2 3 V 4 100 A/µs 1000 0 200 400 600 A/800µs 1000<br>VF -diF/dt -diF/dt<br>Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr Fig. 3 Peak reverse current IRM<br>versus -diF/dt versus  -diF/dt<br>2.0 220 120 1.2<br>TOO =. eo ns VTVJR = 100°C= 600V V TIF VJ  = 30A= 100°C µs<br>200<br>Kf1.5 trr VFR80 tfr 0.8tfr<br>EHH) HSE |<br>Van 180 i \\ VFR 7<br>IF= 60A<br>1.0 IF= 30A<br>ArT IRM We IF= 15A NA<br>160<br>tg PSS 40 LY 0.4<br>0.5<br>ITLL Qr 140 SES Na<br>Iq} tt eS aaa<br>0.0 POPPPPPA) = 120  fet iL 0 RL 0.0<br>0 40 80 120 °C 160 0 200 400 600 A/800µs 1000 0 200 400 600 A/800µs 1000<br>TVJ -diF/dt diF/dt<br>Fig. 4 Dynamic parameters Qr, IRM Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr<br>versus TVJ versus diF/dt<br>2<br>DSEP 30-12AR Constants for ZthJC calculation ..A:<br>1<br>K/W DSEP 30-12A i Rthi (K/W) ti (s)<br>1 0.465 0.0052<br>Z eee thJC eee e 2 0.179 0.0003<br>0.1 3 0.256 0.0397<br>Constants for ZthJC calculation ..AR:<br>0.01 i Rthi (K/W) ti (s)<br>1 0.368 0.0052<br>2 0.1417 0.0003<br>3 0.0295 0.0004<br>4 0.5604 0.0092<br>0.001 AC LATHE | LI ELLE ETE<br>0.00001 0.0001 0.001 0.01 0.1 s 1<br>t<br>**----- End of picture text -----**<br>


NOTE: Fig. 2 to Fig. 6 shows typical values 

Fig. 7 Transient thermal resistance junction to case 

IXYS reserves the right to change limits, test conditions and dimensions. 

© 2005 IXYS All rights reserved 

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