DSEP30-06BR

**DSEP 30-06A DSEP 30-06BR   DSEP 30-06B** 

## **HiPerFRED[TM] Epitaxial Diode with soft recovery** 

|**VRSM**|**VRRM**|**Type**||
|---|---|---|---|
|**V**|**V**|||
|**600**|**600**|**DSEP 30-06A**|**DSEP 30-06A**|
|**600**|**600**|**DSEP 30-06B**|**DSEP 30-06B**|
|**600**|**600**|**DSEP 30-06BR**|**DSEP 30-06BR**|



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|**Symbol**|**Conditions**|**Maximum Ratings**|**Maximum Ratings**|
|---|---|---|---|
|**IFRMS**||70|A|
|**IFAVM**|rect., d = 0.5; TC(Vers. A) = 135°C|30|A|
|**IFSM**|TC(Vers. B) = 125°C; TC(Vers. BR) = 115°C<br>TVJ= 45°C; tp= 10 ms (50 Hz), sine<br>250||A|
|**EAS**|TVJ= 25°C; non-repetitive|0.2|mJ|
|**IAR**|IAS= 1.3 A; L = 180 µH<br>VA= 1.5**·**VRtyp.; f = 10 kHz; repetitive|0.1|A|
|**TVJ**||-55...+175|°C|
|**TVJM**||175|°C|
|**Tstg**||-55...+150|°C|
|**Ptot**|TC= 25°C|165|W|
|**Md***<br>**FC**|(Vers. BR)<br>mounting torque<br>mounting force with clip|135<br>0.8...1.2<br>20...120|W<br>Nm<br>N|
|**VISOL****<br>**Weight**|50/60 Hz, RMS,  t = 1 minute, leads-to-tab<br>typical|2500<br>6|V~<br>g|
|* Verson A only; ** Version BR only||||
|**Symbol**|**Conditions**<br>**Characteristic max. Values**||**Characteristic max. Values**|
|||**Vers. A    Vers. B**||
|**IR**<br>①|TVJ= 25°C<br>VR = VRRM<br>TVJ= 150°C VR = VRRM|250<br>250<br>1<br>2|µA<br>mA|
|**VF**<br>②|IF= 30 A;<br>TVJ= 150°C|1.25<br>1.56|V|
||TVJ=   25°C|1.60<br>2.51|V|
|**RthJC**<br>**RthJC**<br>**RthCH**|Version BR<br>typ.|0.9<br>0.9<br>1.1<br>0.25<br>0.25|K/W<br>K/W<br>K/W|
|**trr**typ.|IF= 1 A; -di/dt = 200 A/µs;|35<br>30|ns|
||VR= 30 V; TVJ= 25°C|||
|**IRM**typ.|VR= 100 V; IF= 50 A; -diF/dt = 100 A/µs|6<br>4|A|
||TVJ= 100°C|||



**IFAV = 30 A VRRM = 600  V trr = 30/35 ns** 

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TO-247 AD ISOPLUS 247 [TM]<br>Version A Version BR<br>CA a aw£ C A ——<br>C (TAB) Isolated<br>back surface<br>A = Anode, C = Cathode<br>**----- End of picture text -----**<br>


## **Features** 

- International standard package 

- Planar passivated chips 

- Very short recovery time 

- Extremely low switching losses 

- Low IRM-values 

- Soft recovery behaviour 

- Epoxy meets UL 94V-0 

- Version ..R isolated and UL registered E153432 

## **Applications** 

- Antiparallel diode for high frequency switching devices 

- Antisaturation diode 

- Snubber diode 

- Free wheeling diode in converters and motor control circuits 

- Rectifiers in switch mode power supplies (SMPS) 

- Inductive heating 

- Uninterruptible power supplies (UPS) 

- Ultrasonic cleaners and welders 

## **Advantages** 

- Avalanche voltage rated for reliable operation 

- Soft reverse recovery for low EMI/RFI 

- Low IRM reduces: 

- Power dissipation within the diode 

- Turn-on loss in the commutating switch 

## **Dimensions see Outlines.pdf** 

Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 % ② Pulse Width = 300 µs, Duty Cycle < 2.0 % 

Data according to IEC 60747 and per diode unless otherwise specified. 

IXYS reserves the right to change limits, test conditions and dimensions. 

© 2004 IXYS All rights reserved 

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**DSEP 30-06A** 

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70 3000 50<br>60A nC TVVJR = 100°C= 300V A TVVJR = 100°C= 300V<br>2500<br>40<br>I A F 5040 SE TVJ=150°C Qr2000 LtTT IF= 60A IRM 30 IIIFFF= 60A= 30A= 15A See<br>30 Oe TVJ=100°C 1500 ee) IIFF= 30A= 15A eee<br>20<br>Sane) fin ey AL<br>1000<br>20<br>Saar san Soy An<br>10 000) TVJ=25°C 500 10<br>0 CO ALo ne 0 2aLL © te 0 eee<br>0.0 0.5 1.0 1.5 V2.0 100 A/µs 1000 0 200 400 600 A/800µs 1000<br>VF -diF/dt -diF/dt<br>Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr Fig. 3 Peak reverse current IRM<br>versus -diF/dt versus  -diF/dt<br>2.0 130 20 1.2<br>ns TVJ= 100°C<br>Toh » 120 RE VR = 300V V +} Ae FR V tfr VFR µstfr<br>»CODOO 1.5  I t | rr RR 15 a 0.9<br>Kf 110 IF= 60A<br>IF= 30A<br>IF= 15A<br>CELE NEE Vo<br>1.0 100 10 0.6<br>TA OSS<br>IRM<br>oy =O OE<br>90<br>0.5 5 0.3<br>ev ESSERE NT<br>Qr 80 TVJ= 100°C<br>IF   = 30A<br>4 TRS<br>0.0 PELE LEELL 70 a 0 | | 0.0<br>0 40 80 120 °C 160 0 200 400 600 A/800µs 1000 0 200 400 600 A/800µs 1000<br>TVJ -diF/dt diF/dt<br>Fig. 4 Dynamic parameters Qr, IRM Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr<br>versus TVJ versus diF/dt<br>1 Constants for ZthJC calculation:<br>K/W<br>i Rthi (K/W) ti (s)<br>1 0.465 0.0052<br>0.1 2 0.179 0.0003<br>ZthJC 3 0.256 0.0396<br>0.01<br>0.001 PAC LUM ETTEEE DSEP30-06A DSEC60-06A NOTE: Fig. 2 to Fig. 6 shows typical values<br>0.00001 0.0001 0.001 0.01 0.1 s 1<br>t<br>**----- End of picture text -----**<br>


Fig. 7 Transient thermal resistance junction to case 

IXYS reserves the right to change limits, test conditions and dimensions. 

© 2004 IXYS All rights reserved 

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**DSEP 30-06BR   DSEP 30-06B** 

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100 300 12<br>A nC TVJ = 100°C A<br>250 VR = 300 V 10 IF = 60 A<br>80<br>I WELLL F TVJ = 150°C Qr200 IIFF = 60 A = 30 A Y IRM 8 | | IIFF = 30 A = 15 A | ff<br>60 ol ae, : =<br>TVJ = 100°C IF = 15 A<br>150 6<br>40 | Sy + FF<br>100 Coe 4 ESE TVJ = 100°C<br>VR = 300 V<br>20 /iiee—anr TVJ = 25°C 50 2 f=<br>a a Zo<br>0 0 0<br>0 1 2 3 V 4 100 A/µs 1000 0 200 400 600 A/800µs 1000<br>VF -diF/dt -diF/dt<br>Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr Fig. 3 Peak reverse current IRM<br>versus -diF/dt versus  -diF/dt<br>2.0 140 60 0.30<br>CCOCIT)s» 120ns EOE TVVJR = 300 V = 100°C 50V TIFVJ = 30 A = 100°C Te 0.25µs tfr<br>Secrecy) 1.5 t | rr BR VFR<br>Kf itt 100 SS IF = 60 A 40 R e 0.20<br>ye) AWE TT Tet<br>IF = 30 A<br>1.0 30 0.15<br>CCC IRM 80 We IF = 15 A fone<br>coat | AS yer<br>20 0.10<br>0.5 60 VFR tfr<br>rey RES A NE<br>Qr 10 0.05<br>0.0 ceePLE ELELL 40 SESft 0 E eeESee 0.00<br>0 40 80 120 C 160 0 200 400 600 A/800µs 1000 0 200 400 600 A/800µs 1000<br>TVJ -diF/dt diF/dt<br>Fig. 4 Dynamic parameters Qr, IRM Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFRFR and tfr<br>versus TVJ versus diF/dtF/dt/dt<br>10 Constants for ZthJC calculation ..B:<br>K/W DSEP 30-06BR i Rthi (K/W) ti (s)<br>1 1 0.465 0.0052<br>DSEP 30-06B 2 0.179 0.0003<br>ZthJC 3 0.256 0.0397<br>0.1 Constants for ZthJC calculation ..BR:<br>i Rthi (K/W) ti (s)<br>0.01 1 0.368 0.0052<br>2 0.1417 0.0003<br>3 0.0295 0.0004<br>0.001 Of es ee ns 4 0.5604 0.0092<br>0.00001 0.0001 0.001 0.01 0.1 s 1<br>t<br>**----- End of picture text -----**<br>


Fig. 6 Peak forward voltage VFRFR and tfr versus diF/dtF/dt/dt 

Fig. 7 Transient thermal resistance junction to case 

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NOTE: Fig. 2 to Fig. 6 shows typical values<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, test conditions and dimensions. 

© 2004 IXYS All rights reserved 

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