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DSEP30-06B
Fast / Ultrafast Diode, 600 V, 30 A, Single, 3.19 V, 25 ns, 250 A
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- Manufacturer: LITTELFUSE
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 2 Pin
- Product Range: -
- Qualification: -
- Diode Case Style: TO-247
- Diode Configuration: Single
- Forward Voltage Max: 3.19V
- Forward Surge Current: 250A
- Reverse Recovery Time: 25ns
- Average Forward Current: 30A
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 600V
| Delivery and price | |
|---|---|
| Units per pack | 300 |
| Price | 2.24 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **DSEP30-06B** ## **HiPerFRED** **VRRM** _**=**_ **600 V I FAV** _**=**_ **30 A t rr** _**=**_ **25 ns** High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode ## **Part number** ## **DSEP30-06B** **==> picture [67 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> Backside: cathode<br>**----- End of picture text -----**<br> **==> picture [115 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> 3 1<br>**----- End of picture text -----**<br> ## **Features / Advantages:** - Planar passivated chips - Very low leakage current - Very short recovery time - Improved thermal behaviour - Very low Irm-values - Very soft recovery behaviour - Avalanche voltage rated for reliable operation - Soft reverse recovery for low EMI/RFI ## **Applications:** - Antiparallel diode for high frequency switching devices - Antisaturation diode - Snubber diode - Free wheeling diode - Rectifiers in switch mode power supplies (SMPS) - Uninterruptible power supplies (UPS) ## **Package:** TO-247 - Industry standard outline - RoHS compliant - Epoxy meets UL 94V-0 - Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ## **Disclaimer Notice** Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20210118b © 2021 IXYS all rights reserved **DSEP30-06B** |**Fast Diode**|**Fast Diode**|**Ratings**<br>**typ.**<br>**max.**<br>**min.**<br>**Unit**|**Ratings**<br>**typ.**<br>**max.**<br>**min.**<br>**Unit**|**Ratings**<br>**typ.**<br>**max.**<br>**min.**<br>**Unit**|**Ratings**<br>**typ.**<br>**max.**<br>**min.**<br>**Unit**|**Ratings**<br>**typ.**<br>**max.**<br>**min.**<br>**Unit**| |---|---|---|---|---|---|---| |**Symbol**<br>**Definition**<br>**Conditions**||||||| |**VRSM**<br>_max. non-repetitive reverse blocking voltage_||T = 25°C<br>VJ|||600|V| |**VRRM**<br>_max. repetitive reverse blocking voltage_||T = 25°C<br>VJ|||600|V| |**I R**<br>_reverse current, drain current_|V = V<br>R<br>V = V<br>R<br>600<br>600|T = 25°C<br>VJ<br>T = °C<br>VJ<br>150|||250<br>2|mA<br>µA| |**VF**<br>_forward voltage drop_|I = A<br>F<br>30<br>I = A<br>F<br>60|T = 25°C<br>VJ|||2.51<br>3.19|V<br>V| ||I = A<br>F<br>30<br>I = A<br>F<br>60|T = °C<br>VJ<br>150|||1.61<br>2.24|V<br>V| |**I**<br>**FAV**<br>_average forward current_|T = °C<br>C<br>120<br>d =<br>rectangular<br>0.5|T = °C<br>VJ<br>175|||30|A| |**VF0**<br>**rF**<br>_threshold voltage_<br>_slope resistance_<br>_for power loss calculation only_||T = °C<br>VJ<br>175|||0.84<br>19.6|V<br>mΩ| |**R**<br>_thermal resistance junction to case_<br>**thJC**|||||0.9|K/W| |**R**<br>_thermal resistance case to heatsink_<br>**thCH**||||0.25||K/W| |**Ptot**<br>_total power dissipation_||T = 25°C<br>C|||165|W| |**IFSM**<br>t = 10 ms; (50 Hz), sine;<br>_max. forward surge current_<br>V = 0 V<br>R||T = 45°C<br>VJ|||250|A| |**CJ**<br>_junction capacitance_<br>V = V<br>400<br>f = 1 MHz<br>R||T = 25°C<br>VJ||26||pF| |_reverse recovery time_<br>**IRM**<br>_max. reverse recovery current_<br>IF =<br>A;<br>30<br>-diF<br>=<br>A/µs<br>200<br>/dt<br>**trr**<br>VR =<br>V<br>300||TVJ =<br>°C<br>25<br>T<br>=<br>100°C<br>VJ||2.5<br>4.5||A<br>A| |||TVJ =<br>°C<br>25<br>T<br>=<br>100°C<br>VJ||25<br>70||ns<br>ns| IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20210118b © 2021 IXYS all rights reserved **DSEP30-06B** |**Ratings**<br>**Package**<br>**TO-247**|**Ratings**<br>**Package**<br>**TO-247**|**Ratings**<br>**Package**<br>**TO-247**|**Ratings**<br>**Package**<br>**TO-247**|**Ratings**<br>**Package**<br>**TO-247**| |---|---|---|---|---| |**Symbol**<br>**Definition**<br>**Conditions**|**min.**|**typ.**|**max.**|**Unit**| |**I RMS**<br>_RMS current_<br>per terminal|||70|A| |**TVJ**<br>_virtual junction temperature_|-55||175|°C| |**Top**<br>_operation temperature_|-55||150|°C| |**Tstg**<br>_storage temperature_|-55||150|°C| |**Weight**||6||g| |**M D**<br>_mounting torque_<br>**FC**<br>_mounting force with clip_|0.8||1.2|| ||20|||| ## Product Marking **==> picture [114 x 130] intentionally omitted <==** **----- Start of picture text -----**<br> Logo IXYS<br>Part Number XXXXXXXXX<br>Date Code yywwZ<br>1234<br>Lot#<br>Location<br>**----- End of picture text -----**<br> **==> picture [215 x 78] intentionally omitted <==** |**Ordering**||**Ordering Number**|**Marking on Product**|**Marking on Product**|**Delivery Mode**|**Quantity**|**Code No.**| |---|---|---|---|---|---|---|---| |Standard||DSEP30-06B|DSEP30-06B||Tube|30|475408| ||||||||| |||**Similar Part**|**Package**|**Voltage class**|||| |||DSEP29-06A|TO-220AC(2)|600|||| |||DSEP29-06AS|TO-263AB(D2Pak) (2)|600|||| |||DSEP30-06A|TO-247AD(2)|600|||| |||DSEP30-06BR|ISOPLUS247(2)|600|||| ||||||||| |||DHG30I600HA|TO-247AD(2)|600|||| |||DHG30I600PA|TO-220AC(2)|600|||| |||DHG30IM600PC|TO-263AB(D2Pak) (2)|600|||| |**Equivalent Circuits for Simulation**<br>T =<br>VJ<br>°C<br>_* on die level_<br>175|**Equivalent Circuits for Simulation**<br>T =<br>VJ<br>°C<br>_* on die level_<br>175| |---|---| |I|V0<br>~~R~~0| IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20210118b © 2021 IXYS all rights reserved **DSEP30-06B** ## **Outlines TO-247** **==> picture [510 x 483] intentionally omitted <==** **----- Start of picture text -----**<br> |||||||| |---|---|---|---|---|---|---| |A|D2| |E|A2|Ø P|Ø P1| |Sym.|Inches Millimeter| |min.|max.|min.|max.| |Q|S|A|0.185|0.209|4.70|5.30| |A1|0.087|0.102|2.21|2.59| |A2|0.059|0.098|1.50|2.49| |D1|D|0.819|0.845|20.79|21.45| |D|E|0.610|0.640|15.48|16.24| |E2|0.170|0.216|4.31|5.48| |2x E2| |4|e|0.430 BSC 10.92 BSC| |L|0.780|0.800|19.80|20.30| |L1|-|0.177|-|4.49| |1|2|3| |Ø P|0.140|0.144|3.55|3.65| |Q|0.212|0.244|5.38|6.19| |L1|E1|S|0.242 BSC 6.14 BSC| |b|0.039|0.055|0.99|1.40| |b2|0.065|0.094|1.65|2.39| |L| |b4|0.102|0.135|2.59|3.43| |c|0.015|0.035|0.38|0.89| |D1|0.515|-|13.07|-| |2x b2|D2|0.020|0.053|0.51|1.35| |2x b|C|E1|0.530|-|13.45|-| |A1|Ø P1|-|0.29|-|7.39| |e| **----- End of picture text -----**<br> **==> picture [509 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> 3 1<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20210118b © 2021 IXYS all rights reserved **DSEP30-06B** ## **Fast Diode** **==> picture [508 x 660] intentionally omitted <==** **----- Start of picture text -----**<br> 100 600 20<br>TVJ = 100°C IF = 60 A<br>80 500 VR = 300 V 16 IF = 30 A<br>TVJ = 150°C IF = 15 A<br>400<br>IF 60 TVJ = 100°C Qr 300 I IFF = 60 A = 30 A IRM 12<br>[A] 40 [nC] IF = 15 A 8<br>200 [A] TVJ = 100°C<br>VR = 300 V<br>20 4<br>TVJ = 25°C 100<br>0 0 0<br>0 1 2 3 4 100 1000 0 200 400 600 800 1000<br>VF [V] -diF /dt [A/µs] -diF /dt [A/µs]<br>Fig. 1 Forward current Fig. 2 Typ. reverse recov. charge Fig. 3 Typ. peak reverse current<br>IF versus VF Qr versus -diF /dt IRM versus -diF /dt<br>2.0 140 60 0.30<br>TVJ = 100°C TVJ = 100°C<br>120 VR = 300 V 50 IF = 30 A 0.25<br>1.5<br>100 I F = 60 A 40 0.20<br>Kf 1.0 trr 80 IIFF = 30 A = 15 A VFR 30 0.15 [µs]tfr<br>[V]<br>[ns]<br>20 0.10<br>IRM 60 VFR tfr<br>0.5<br>10 0.05<br>Qr 40<br>0.0 0 0.00<br>0 40 80 120 160 0 200 400 600 800 1000 0 200 400 600 800 1000<br>TVJ [°C] -diF /dt [A/µs] -diF /dt [A/µs]<br>Fig. 4 Dynamic parameters Fig. 5 Typ. recovery time Fig. 6 Typ. peak forward voltage<br>Qr, IRM versus TVJ trr versus -diF /dt VFR and tfr versus diF /dt<br>10<br>1<br>ZthJC<br>Constants for ZthJC calculation:<br>0.1<br>[K/W] i Rthi (K/W) ti (s)<br>1 0.030 0.001<br>0.01 2 0.080 0.030<br>3 0.300 0.006<br>4 0.490 0.060<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1<br>t [s]<br>Fig. 7 Transient thermal impedance junction to case<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20210118b © 2021 IXYS all rights reserved
Updated at June 4, 2026
Founded in 1927 and headquartered in Chicago, Illinois, Littelfuse is a premier global manufacturer of circuit protection, power control, and sensing technologies. Widely recognized for pioneering the first small, fast-acting protective fuse, the company has grown into an industry leader whose highly reliable components are essential to modern industrial, transportation, and consumer electronics applications worldwide. At the core of the Littelfuse portfolio is an expansive and industry-leading range of circuit protection solutions. This encompasses a massive selection of traditional fuses, fuse holders, and resettable PTC thermistor fuses designed to safely interrupt overcurrent conditions. To defend against electrical overstress, Littelfuse also provides advanced transient voltage suppression (TVS) technologies, including thousands of specialized TVS diodes, TVS varistors, and gas discharge tubes (GDTs) that ensure robust defense against voltage spikes and environmental hazards. Beyond its foundational protection components, Littelfuse manufactures a diverse array of discrete semiconductors, sensors, and switching devices. Engineers rely on their high-performance thyristors, including TRIACs and SCRs, alongside power-efficient Schottky diodes and MOSFETs for demanding power control applications. Complemented by precision proximity sensors and highly reliable reed and solid-state relays, Littelfuse delivers the critical building blocks required for secure, efficient, and complete system design.
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