DSEP30-06A

**DSEP30-06A** ~~BUIXYSesses~~ 

## **HiPerFRED** 

**VRRM** _**=**_ **600 V I FAV** _**=**_ **30 A t rr** _**=**_ **35 ns** 

High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 

## **Part number** 

## **DSEP30-06A** 

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## **Features / Advantages:** 

- Planar passivated chips 

- Very low leakage current 

- Very short recovery time 

- Improved thermal behaviour 

- Very low Irm-values 

- Very soft recovery behaviour 

- Avalanche voltage rated for reliable operation 

- Soft reverse recovery for low EMI/RFI 

## **Package:** TO-247 

## **Applications:** 

- Antiparallel diode for high frequency ● Industry standard outline 

- switching devices ● RoHS compliant 

   - RoHS compliant 

- Antisaturation diode 

      - Epoxy meets UL 94V-0 

   - Snubber diode 

   - Free wheeling diode 

   - Rectifiers in switch mode power 

   - supplies (SMPS) 

   - Uninterruptible power supplies (UPS) 

- Low Irm reduces: 

- Power dissipation within the diode 

- Turn-on loss in the commutating switch 

## **Terms  Conditions of usage:** 

The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. 

Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend 

- to perform joint risk and quality assessments; 

- the conclusion of quality agreements; 

- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. 

IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20160922a 

© 2016 IXYS all rights reserved 

**DSEP30-06A** 

|**Fast Diode**|**Fast Diode**|**Ratings**<br>**typ.**<br>**max.**<br>**min.**<br>**Unit**|**Ratings**<br>**typ.**<br>**max.**<br>**min.**<br>**Unit**|**Ratings**<br>**typ.**<br>**max.**<br>**min.**<br>**Unit**|**Ratings**<br>**typ.**<br>**max.**<br>**min.**<br>**Unit**|**Ratings**<br>**typ.**<br>**max.**<br>**min.**<br>**Unit**|
|---|---|---|---|---|---|---|
|**Symbol**<br>**Definition**<br>**Conditions**|||||||
|**VRSM**<br>_max. non-repetitive reverse blocking voltage_||T    =   25°C<br>VJ|||600|V|
|**VRRM**<br>_max. repetitive reverse blocking voltage_||T    =   25°C<br>VJ|||600|V|
|**I R**<br>_reverse current, drain current_|V    =          V<br>R<br>V    =          V<br>R<br>600<br>600|T    =   25°C<br>VJ<br>T    =       °C<br>VJ<br>150|||250<br>1|mA<br>µA|
|**VF**<br>_forward voltage drop_|I  =          A<br>F<br>30<br>I  =          A<br>F<br>60|T    =   25°C<br>VJ|||1.60<br>1.91|V<br>V|
||I  =          A<br>F<br>30<br>I  =          A<br>F<br>60|T    =       °C<br>VJ<br>150|||1.25<br>1.52|V<br>V|
|**I**<br>**FAV**<br>_average forward current_|T  =       °C<br>C<br>135<br>d =<br>rectangular<br>0.5|T    =       °C<br>VJ<br>175|||30|A|
|**VF0**<br>**rF**<br>_threshold voltage_<br>_slope resistance_<br>_for power loss calculation only_||T    =       °C<br>VJ<br>175|||0.91<br>8.7|V<br>mΩ|
|**R**<br>_thermal resistance junction to case_<br>**thJC**|||||0.9|K/W|
|**R**<br>_thermal resistance case to heatsink_<br>**thCH**||||0.25||K/W|
|**Ptot**<br>_total power dissipation_||T    =   25°C<br>C|||165|W|
|**IFSM**<br>t = 10 ms; (50 Hz), sine;<br>_max. forward surge current_<br>V  = 0 V<br>R||T    =   45°C<br>VJ|||250|A|
|**CJ**<br>_junction capacitance_<br>V  =         V<br>400<br>f = 1 MHz<br>R||T    =   25°C<br>VJ||26||pF|
|_reverse recovery time_<br>**IRM**<br>_max. reverse recovery current_<br>IF =<br>A;<br>30<br>-diF<br>=<br>A/µs<br>200<br>/dt<br>**trr**<br>VR =<br>V<br>300||TVJ =<br>°C<br>25<br>T<br>=<br>100°C<br>VJ||6<br>10||A<br>A|
|||TVJ =<br>°C<br>25<br>T<br>=<br>100°C<br>VJ||35<br>100||ns<br>ns|



IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20160922a 

© 2016 IXYS all rights reserved 

**DSEP30-06A** 

|**Ratings**<br>**Package**<br>**TO-247**|**Ratings**<br>**Package**<br>**TO-247**|**Ratings**<br>**Package**<br>**TO-247**|**Ratings**<br>**Package**<br>**TO-247**|**Ratings**<br>**Package**<br>**TO-247**|
|---|---|---|---|---|
|**Symbol**<br>**Definition**<br>**Conditions**|**min.**|**typ.**|**max.**|**Unit**|
|**I RMS**<br>_RMS current_<br>per terminal|||70|A|
|**TVJ**<br>_virtual junction temperature_|-55||175|°C|
|**Top**<br>_operation temperature_|-55||150|°C|
|**Tstg**<br>_storage temperature_|-55||150|°C|
|**Weight**||6||g|
|**M D**<br>_mounting torque_<br>**FC**<br>_mounting force with clip_|0.8||1.2||
||20||||



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Product Marking<br>Logo IXYS<br>Part No. XXXXXXXXX<br>Assembly Line Zyyww<br>abcd<br>Assembly Code<br>Date Code<br>**----- End of picture text -----**<br>


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|**Ordering**||**Ordering Number**|**Marking on Product**|**Marking on Product**|**Delivery Mode**|**Quantity**|**Code No.**|
|---|---|---|---|---|---|---|---|
|Standard||DSEP30-06A|DSEP30-06A||Tube|30|471828|
|||||||||
|||**Similar Part**|**Package**|**Voltage class**||||
|||DSEP29-06A|TO-220AC(2)|600||||
|||DSEP29-06AS|TO-263AB(D2Pak) (2)|600||||
|||DSEP30-06B|TO-247AD(2)|600||||
|||DSEP30-06BR|ISOPLUS247(2)|600||||
|||DHG30I600HA|TO-247AD(2)|600||||
|||DHG30I600PA|TO-220AC(2)|600||||
|||DHG30IM600PC|TO-263AB(D2Pak) (2)|600||||



|**Equivalent Circuits for Simulation**<br>T    =<br>VJ<br>175 °C<br>_* on die level_|**Equivalent Circuits for Simulation**<br>T    =<br>VJ<br>175 °C<br>_* on die level_|
|---|---|
|I|V0<br>~~R~~0|



IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20160922a 

© 2016 IXYS all rights reserved 

**DSEP30-06A** 

## **Outlines TO-247** 

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||||||||
|---|---|---|---|---|---|---|
|A|D2|
|E|A2|Ø P|Ø P1|
|Sym.|Inches                 Millimeter|
|min.|max.|min.|max.|
|Q|S|A|0.185|0.209|4.70|5.30|
|A1|0.087|0.102|2.21|2.59|
|A2|0.059|0.098|1.50|2.49|
|D1|D|0.819|0.845|20.79|21.45|
|D|E|0.610|0.640|15.48|16.24|
|E2|0.170|0.216|4.31|5.48|
|2x E2|
|4|e|0.430 BSC            10.92 BSC|
|L|0.780|0.800|19.80|20.30|
|L1|-|0.177|-|4.49|
|1|2|3|
|Ø P|0.140|0.144|3.55|3.65|
|Q|0.212|0.244|5.38|6.19|
|L1|E1|S|0.242 BSC             6.14 BSC|
|b|0.039|0.055|0.99|1.40|
|b2|0.065|0.094|1.65|2.39|
|L|
|b4|0.102|0.135|2.59|3.43|
|c|0.015|0.035|0.38|0.89|
|D1|0.515|-|13.07|-|
|2x b2|D2|0.020|0.053|0.51|1.35|
|2x b|C|E1|0.530|-|13.45|-|
|A1|Ø P1|-|0.29|-|7.39|
|e|

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IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20160922a 

© 2016 IXYS all rights reserved 

**DSEP30-06A** 

## **Fast Diode** 

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70 3000 50<br>TVJ = 100°C<br>60 VR = 300 V<br>2500<br>TVJ = 150°C 40 I F  = 60 A<br>50 100°C I F  = 30 A<br>2000<br>IF 40 25°C Qr IF = 60 A IRM 30 I F = 15 A<br>1500 I F = 30 A<br>30<br>[A] [µC] IF = 15 A [A] 20<br>1000 TVJ = 100°C<br>20 VR = 300 V<br>10<br>500<br>10<br>0 0 0<br>0.0 0.5 1.0 1.5 2.0 100 1000 0 200 400 600 800 1000<br>VF [V] -diF /dt  [A/µs] -diF /dt  [A/µs]<br>Fig. 1 Forward current Fig. 2 Typ. reverse recov. charge Fig. 3 Typ. peak reverse current<br>IF versus VF Qr versus -diF /dt IRM versus -diF /dt<br>2.0 130 20 1.2<br>TVJ = 100 ° C TVJ = 100°C<br>120 V R  = 300 V IF = 30 A<br>1.5 15 0.9<br>110 IF = 60 A<br>Kf 1.0 trr 100 IIF F = 30 A= 15 A VFR 10 0.6 tfr<br>[V] [µs]<br>[ns]<br>90<br>IRM<br>0.5 5 0.3<br>Qr 80 VFR trr<br>0.0 70 0 0.0<br>0 40 80 120 160 0 200 400 600 800 1000 0 200 400 600 800 1000<br>TVJ [°C] -diF /dt  [A/µs] -diF /dt  [A/µs]<br>Fig. 4 Dynamic parameters Fig. 5 Typ. recovery time Fig. 6 Typ. peak forward voltage<br>Qr, IRM versus TVJ trr versus -diF /dt VFR and tfr versus diF /dt<br>1<br>0.1<br>Constants for ZthJC calculation:<br>ZthJC<br>[K/W] i Rthi (K/W) ti (s)<br>1 0.030 0.001<br>0.01<br>2 0.080 0.030<br>3 0.300 0.006<br>4 0.490 0.060<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1<br>t [s] t<br>Fig. 7 Transient thermal impedance junction to case<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20160922a 

© 2016 IXYS all rights reserved