DSEP15-12CR

**DSEP 15-12CR** 

## **HiPerDynFRED[TM] Epitaxial Diode with soft recovery (Electrically Isolated Back Surface)** 

**IFAV = 15 A VRRM = 1200 V trr = 20 ns** 

## Preliminary Data 

**VRSM VRRM Type V V 1200 1200 DSEP 15-12CR** ~~OO~~ 

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A C<br>Gy.<br>**----- End of picture text -----**<br>


## **ISOPLUS 247[TM]** 

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C<br>A<br>Isolated back surface *<br>**----- End of picture text -----**<br>


A = Anode, C = Cathode 

- Patent pending 

|**V**<br>**1200**<br>~~OO~~|**V**<br>**1200**<br>**DSEP 15-12CR**<br>~~OO~~|C<br>A<br>Gy.|C<br>A<br>Gy.|
|---|---|---|---|
|**Symbol**|**Conditions**|**Maximum Ratings**||
|**IFRMS**||50|A|
|**IFAVM**|TC= 130°C; rectangular, d = 0.5|15|A|
|**IFRM**|tP< 10 µs; rep. rating, pulse width limited by TVJM<br>tbd||A|
|**IFSM**|TVJ= 45°C; tp= 10 ms (50 Hz), sine|110|A|
|**EAS**<br>**IAR**|TVJ= 25°C; non-repetitive<br>IAS= 1.0 A; L = 180 µH<br>VA= 1.25**·**VRtyp.; f = 10 kHz; repetitive|0.1<br>0.1|mJ<br>A|
|**TVJ**||-55...+175|°C|
|**TVJM**||175|°C|
|**Tstg**<br>**Ptot**|TC= 25°C|-55...+150<br>150|°C<br>W|
|**VISOL**<br>**FC**|50/60 Hz RMS; IISOL1 mA<br>mounting force with clip|2500<br>20...120|V~<br>N|
|**Weight**|typical|6|g|
|**Symbol**|**Conditions**|**Characteristic Values**<br>**typ.**<br>**max.**||
|**IR**<br>x|TVJ= 25°C<br>VR = VRRM|100|µA|
|**VF** y|TVJ= 150°C VR = VRRM<br>IF= 15 A;<br>TVJ= 150°C<br>TVJ=   25°C|0.5<br>2.67<br>4.04|mA<br>V<br>V|
|**RthJC**||1|K/W|
|**RthCH**<br>**trr**|with heatsink compound<br>IF= 1 A; -di/dt = 200 A/µs;|0.25<br>20|K/W<br>ns|
||VR= 30 V; TVJ= 25°C|||
|**IRM**|VR= 100 V; IF= 25 A; -diF/dt = 100 A/µs<br>TVJ= 100°C|4.0<br>4.9|A|



## **Features** 

- G Silicon chip on Direct-Copper-Bond substrate 

- High power dissipation 

- Isolated mounting surface 

- 2500V electrical isolation 

> G Low cathode to tab capacitance (<25pF) 

- G International standard package 

- G Planar passivated chips 

> G Very short recovery time 

> G Extremely low switching losses 

- G Low IRM-values 

> G Soft recovery behaviour 

> G Epoxy meets UL 94V-0 

> G Isolated and UL registered E153432 

## **Applications** 

> G Antiparallel diode for high frequency switching devices 

- G Antisaturation diode 

- G Snubber diode 

- G Free wheeling diode in converters and motor control circuits 

- G Rectifiers in switch mode power supplies (SMPS) 

- G Inductive heating 

> G Uninterruptible power supplies (UPS) 

- G Ultrasonic cleaners and welders 

## **Advantages** 

> G Avalanche voltage rated for reliable operation 

- G Soft reverse recovery for low EMI/RFI 

- G Low IRM reduces: 

Pulse test: x Pulse Width = 5 ms, Duty Cycle < 2.0 % y Pulse Width = 300 µs, Duty Cycle < 2.0 % 

Data according to IEC 60747 and per diode unless otherwise specified 

- Power dissipation within the diode 

- Turn-on loss in the commutating switch 

## **Dimensions see outlines.pdf** 

IXYS reserves the right to change limits, test conditions and dimensions. 

© 2000 IXYS All rights reserved 

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