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DSEI60-06A
Fast / Ultrafast Diode, 600 V, 60 A, Single, 1.8 V, 35 ns, 550 A
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:600V; Forward Current If(AV):60A; Diode Configuration:Single; Forward Voltage VF Max:1.8V; Reverse Recovery Time trr Max:35ns; Forward Surge Current Ifsm Max:550A; Op
- SVHC: No SVHC (17-Jan-2023)
- No. of Pins: 2 Pin
- Product Range: -
- Qualification: -
- Diode Case Style: TO-247AD
- Diode Configuration: Single
- Forward Voltage Max: 1.8V
- Forward Surge Current: 550A
- Reverse Recovery Time: 35ns
- Average Forward Current: 60A
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 600V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 5.65 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
**DSEI60-06A** ## **Fast Recovery Epitaxial Diode (FRED)** **I** FAV **= 60 A V** RRM **= 600 V t** rr **= 35 ns** **VRSM VRRM** Type V V 600 600 DSEI 60-06A **==> picture [216 x 62] intentionally omitted <==** **----- Start of picture text -----**<br> TO-247 AD<br>A C<br>C<br>A C<br>**----- End of picture text -----**<br> A = Anode, C = Cathode ## **Symbol Conditions** ## **Maximum Ratings** |**IFRMS**<br>**IFAVM**•<br>TC= 70°C; rectangular, d = 0.5<br>100<br>60|A<br>A| |---|---| |**IFSM**<br>TVJ= 45°C;<br>t = 10 ms<br>(50 Hz), sine<br>t = 8.3 ms(60 Hz), sine<br>550<br>600|A<br>A| |TVJ= 150°C; t = 10 ms<br>(50 Hz), sine<br>t = 8.3 ms(60 Hz), sine<br>480<br>520|A<br>A| |**I2t**<br>TVJ= 45°C;<br>t = 10 ms<br>(50 Hz), sine<br>t = 8.3 ms(60 Hz), sine<br>1510<br>1490|A2s<br>A2s| |TVJ= 150°C; t = 10 ms<br>(50 Hz), sine<br>t = 8.3 ms(60 Hz), sine<br>1150<br>1120|A2s<br>A2s| |**TVJ**<br>**TVJM**<br>**Tstg**<br>-55...+150<br>150<br>-55...+150|°C<br>°C<br>°C| |**Ptot**<br>TC= 25°C<br>166|W| |**Md**<br>mountingtorque<br>0.8...1.2|Nm| |**Weight**<br>typical<br>6|g| ## **Features** - International standard package JEDEC TO-247 AD - Planar passivated chips - Very short recovery time - Extremely low switching losses - Low IRM-values - Soft recovery behaviour - Epoxy meets UL 94V-0 ## **Applications** - Antiparallel diode for high frequency switching devices - Anti saturation diode - Snubber diode - Free wheeling diode in converters and motor control circuits - Rectifi ers in switch mode power supplies (SMPS) - Inductive heating and melting - Uninterruptible power supplies (UPS) - Ultrasonic cleaners and welders ||**typ.**|**max.**|| |---|---|---|---| |**IR**<br>VR= VRRM<br>TVJ= 25°C<br>VR= 0.8**·**VRRM<br> TVJ= 25°C<br>VR= 0.8**·**VRRM<br> TVJ= 125°C|~~|~~|200<br>100<br>14<br>~~|~~|µA<br>µA<br>mA<br>~~|~~| |**VF**<br>IF= 70 A<br>TVJ= 150°C<br>TVJ= 25°C||1.5<br>1.8|V<br>V| |**VT0**<br>**rT**<br>For power-loss calculations only<br>TVJ= TVJM||1.13<br>4.7|V<br>mΩ| |**RthJC**<br>**RthCH**<br>(version A)<br>~~|~~|0.25<br>~~|~~|0.75<br>~~|~~|K/W<br>K/W| |**trr**<br>IF= 1 A; -di/dt = 200 A/µs; VR= 30 V; TVJ= 25°C<br>~~|~~|35<br>~~|~~<br>~~|~~|50<br>~~|~~<br>~~|~~|ns| |**IRM**<br>VR= 350 V; IF= 60 A; -diF/dt = 480 A/µs<br>L<0.05µH; TVJ= 100°C<br>~~|~~<br>~~|~~|19.0<br>~~|~~<br>~~a~~|~~|~~<br>~~a~~|A| ## **Advantages** - High reliability circuit operation - Low voltage peaks for reduced protection circuits - Low noise switching - Low losses - Operating at lower temperature or space saving by reduced cooling - IFAVM rating includes reverse blocking losses at TVJM. VR = 0.8 **·** VRRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions. 20080901b © 2008 IXYS All rights reserved 1 - 3 ## **DSEI60-06A** **==> picture [505 x 639] intentionally omitted <==** **----- Start of picture text -----**<br> 180 4 50<br>160 TVJ = 100°C TVJ = 100°C<br>VR = 350 V VR = 350 V<br>40<br>140<br>3<br>120 IF = 120 A<br>IF 100 T VJ = 150°C 100°C Qr 2 IF = 120 A60 A IRM 30 60 A 30 A<br>80 30 A<br>[A] 25°C [µC] [A] 20<br>60<br>1 typ.<br>40<br>10<br>20<br>typ.<br>0 0 0<br>0 1 2 3 10 [0] 10 [1] 10 [2] 10 [3] 0 200 400 600 800 1000<br>VF [V] -diF /dt [A/µs] -diF /dt [A/µs]<br>Fig. 1 Forward current Fig. 2 Typ. reverse recov. charge Fig. 3 Typ. peak reverse current<br> IF versus VF Qr versus -diF/dt IRM versus -diF/dt<br>0.8 20 1000<br>1.2 TVJ = 100°C TVJ = 125°C<br>VR = 350 V 16 IF = 60 A 800<br>0.6<br>1.0<br>trr 0.4 max. IF = 60 A 120 A VFR 12 600<br>Kf 0.8 60 A tfr<br>[µs] [V] 8 400<br>30 A [ns]<br>IRM 0.2<br>0.6<br>typ. 4 200<br>Qr VFR trr<br>0.4 0.0 0 0<br>0 40 80 120 160 0 200 400 600 800 1000 0 200 400 600 800 1000 1200<br>TVJ [°C] -diF /dt [A/µs] -diF /dt [A/µs]<br>Fig. 4 Dynamic parameters Fig. 5 Typ. recovery time Fig. 6 Typ. peak forward voltage<br> Qr, IRM versus TVJ trr versus -diF /dt VFR and tfr versus diF/dt<br>0.8<br>0.6<br>ZthJC<br>0.4<br>[K/W]<br>0.2<br>0.0<br>10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1]<br>t [s]<br>**----- End of picture text -----**<br> Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved 20080901b 2 - 3 **DSEI60-06A** ## Dimensions TO-247 AD **==> picture [511 x 244] intentionally omitted <==** **----- Start of picture text -----**<br> A D2<br>E A2 Ø P Ø P1<br>Sym. Inches Millimeter<br>min. max. min. max.<br>Q S A 0.185 0.209 4.70 5.30<br>A1 0.087 0.102 2.21 2.59<br>A2 0.059 0.098 1.50 2.49<br>D1 D 0.819 0.845 20.79 21.45<br>D E 0.610 0.640 15.48 16.24<br>E2 0.170 0.216 4.31 5.48<br>2x E2<br>4 e 0.430 BSC 10.92 BSC<br>L 0.780 0.800 19.80 20.30<br>L1 - 0.177 - 4.49<br>1 2 3<br>Ø P 0.140 0.144 3.55 3.65<br>Q 0.212 0.244 5.38 6.19<br>L1 E1 S 0.242 BSC 6.14 BSC<br>b 0.039 0.055 0.99 1.40<br>b2 0.065 0.094 1.65 2.39<br>L<br>b4 0.102 0.135 2.59 3.43<br>c 0.015 0.035 0.38 0.89<br>D1 0.515 - 13.07 -<br>2x b2 D2 0.020 0.053 0.51 1.35<br>2x b C E1 0.530 - 13.45 -<br>A1 Ø P1 - 0.29 - 7.39<br>e<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, test conditions and dimensions. 20080901b © 2008 IXYS All rights reserved 3 - 3
Updated at June 4, 2026
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