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DSEI30-06A
Fast / Ultrafast Diode, 600 V, 37 A, Single, 1.6 V, 50 ns, 300 A
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:600V; Forward Current If(AV):37A; Diode Configuration:Single; Forward Voltage VF Max:1.6V; Reverse Recovery Time trr Max:35ns; Forward Surge Cu
- No. of Pins: 2 Pin
- Product Range: -
- Qualification: -
- Diode Case Style: TO-247AD
- Diode Configuration: Single
- Forward Voltage Max: 1.6V
- Forward Surge Current: 300A
- Reverse Recovery Time: 50ns
- Average Forward Current: 37A
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 600V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 3.66 € |
| Current stock | 500+ |
| Lead time | 30 days |
Datasheet
## **DSEI30-06A** ## **FRED** **VRRM** _**=**_ **600 V I FAV** _**=**_ **30 A t rr** _**=**_ **35 ns** ## Fast Recovery Epitaxial Diode Single Diode ## **Part number** ## **DSEI30-06A** **==> picture [67 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> Backside: cathode<br>**----- End of picture text -----**<br> **==> picture [115 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> 3 1<br>**----- End of picture text -----**<br> ## **Features / Advantages:** - Planar passivated chips - Low leakage current - Very short recovery time - Improved thermal behaviour - Very low Irm-values - Very soft recovery behaviour - Avalanche voltage rated for reliable operation - Soft reverse recovery for low EMI/RFI ## **Applications:** - Antiparallel diode for high frequency switching devices - Antisaturation diode - Snubber diode - Free wheeling diode - Rectifiers in switch mode power supplies (SMPS) - Uninterruptible power supplies (UPS) ## **Package:** TO-247 - Industry standard outline - RoHS compliant - Epoxy meets UL 94V-0 - Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ## **Disclaimer Notice** Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20201009b © 2020 IXYS all rights reserved **DSEI30-06A** |**Fast Diode**|**Fast Diode**|**Ratings**<br>**typ.**<br>**max.**<br>**min.**<br>**Unit**|**Ratings**<br>**typ.**<br>**max.**<br>**min.**<br>**Unit**|**Ratings**<br>**typ.**<br>**max.**<br>**min.**<br>**Unit**|**Ratings**<br>**typ.**<br>**max.**<br>**min.**<br>**Unit**|**Ratings**<br>**typ.**<br>**max.**<br>**min.**<br>**Unit**| |---|---|---|---|---|---|---| |**Symbol**<br>**Definition**<br>**Conditions**||||||| |**VRSM**<br>_max. non-repetitive reverse blocking voltage_||T = 25°C<br>VJ|||600|V| |**VRRM**<br>_max. repetitive reverse blocking voltage_||T = 25°C<br>VJ|||600|V| |**I R**<br>_reverse current, drain current_|V = V<br>R<br>V = V<br>R<br>480<br>600|T = 25°C<br>VJ<br>T = °C<br>VJ<br>125|||100<br>7|mA<br>µA| |**VF**<br>_forward voltage drop_|I = A<br>F<br>30<br>I = A<br>F<br>60|T = 25°C<br>VJ|||1.52<br>1.71|V<br>V| ||I = A<br>F<br>30<br>I = A<br>F<br>60|T = °C<br>VJ<br>150|||1.36<br>1.64|V<br>V| |**I**<br>**FAV**<br>_average forward current_|T = °C<br>C<br>110<br>d =<br>rectangular<br>0.5|T = °C<br>VJ<br>150|||30|A| |**VF0**<br>**rF**<br>_threshold voltage_<br>_slope resistance_<br>_for power loss calculation only_||T = °C<br>VJ<br>150|||1.10<br>8.5|V<br>mΩ| |**R**<br>_thermal resistance junction to case_<br>**thJC**|||||0.8|K/W| |**R**<br>_thermal resistance case to heatsink_<br>**thCH**||||0.25||K/W| |**Ptot**<br>_total power dissipation_||T = 25°C<br>C|||155|W| |**IFSM**<br>t = 10 ms; (50 Hz), sine;<br>_max. forward surge current_<br>V = 0 V<br>R||T = 45°C<br>VJ|||300|A| |**CJ**<br>_junction capacitance_<br>V = V<br>600<br>f = 1 MHz<br>R||T = 25°C<br>VJ||22||pF| |_reverse recovery time_<br>**IRM**<br>_max. reverse recovery current_<br>IF =<br>A;<br>37<br>-diF<br>=<br>A/µs<br>200<br>/dt<br>**trr**<br>VR =<br>V<br>350||TVJ =<br>°C<br>25<br>T<br>=<br>100°C<br>VJ||5.5<br>9||A<br>A| |||TVJ =<br>°C<br>25<br>T<br>=<br>100°C<br>VJ||80<br>150||ns<br>ns| IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20201009b © 2020 IXYS all rights reserved **DSEI30-06A** |**Ratings**<br>**Package**<br>**TO-247**|**Ratings**<br>**Package**<br>**TO-247**|**Ratings**<br>**Package**<br>**TO-247**|**Ratings**<br>**Package**<br>**TO-247**|**Ratings**<br>**Package**<br>**TO-247**| |---|---|---|---|---| |**Symbol**<br>**Definition**<br>**Conditions**|**min.**|**typ.**|**max.**|**Unit**| |**I RMS**<br>_RMS current_<br>per terminal|||70|A| |**TVJ**<br>_virtual junction temperature_|-40||150|°C| |**Top**<br>_operation temperature_|-40||125|°C| |**Tstg**<br>_storage temperature_|-40||150|°C| |**Weight**||6||g| |**M D**<br>_mounting torque_<br>**FC**<br>_mounting force with clip_|0.8||1.2|| ||20|||| ## Product Marking **==> picture [114 x 130] intentionally omitted <==** **----- Start of picture text -----**<br> Logo IXYS<br>Part Number XXXXXXXXX<br>Date Code yywwZ<br>1234<br>Lot#<br>Location<br>**----- End of picture text -----**<br> **==> picture [215 x 78] intentionally omitted <==** |**Ordering**|**Ordering Number**|**Marking on Product**|**Delivery Mode**|**Quantity**|**Code No.**| |---|---|---|---|---|---| |Standard|DSEI30-06A|DSEI30-06A|Tube|30|434272| **==> picture [341 x 68] intentionally omitted <==** **----- Start of picture text -----**<br> Equivalent Circuits for Simulation * on die level T =VJ 150°C<br>I V0 R 0 Fast<br>Diode<br>V 0 max threshold voltage 1.1 V<br>R0 max slope resistance * 6 mΩ<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20201009b © 2020 IXYS all rights reserved **DSEI30-06A** ## **Outlines TO-247** **==> picture [510 x 483] intentionally omitted <==** **----- Start of picture text -----**<br> |||||||| |---|---|---|---|---|---|---| |A|D2| |E|A2|Ø P|Ø P1| |Sym.|Inches Millimeter| |min.|max.|min.|max.| |Q|S|A|0.185|0.209|4.70|5.30| |A1|0.087|0.102|2.21|2.59| |A2|0.059|0.098|1.50|2.49| |D1|D|0.819|0.845|20.79|21.45| |D|E|0.610|0.640|15.48|16.24| |E2|0.170|0.216|4.31|5.48| |2x E2| |4|e|0.430 BSC 10.92 BSC| |L|0.780|0.800|19.80|20.30| |L1|-|0.177|-|4.49| |1|2|3| |Ø P|0.140|0.144|3.55|3.65| |Q|0.212|0.244|5.38|6.19| |L1|E1|S|0.242 BSC 6.14 BSC| |b|0.039|0.055|0.99|1.40| |b2|0.065|0.094|1.65|2.39| |L| |b4|0.102|0.135|2.59|3.43| |c|0.015|0.035|0.38|0.89| |D1|0.515|-|13.07|-| |2x b2|D2|0.020|0.053|0.51|1.35| |2x b|C|E1|0.530|-|13.45|-| |A1|Ø P1|-|0.29|-|7.39| |e| **----- End of picture text -----**<br> **==> picture [509 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> 3 1<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20201009b © 2020 IXYS all rights reserved **DSEI30-06A** ## **Fast Diode** **==> picture [508 x 661] intentionally omitted <==** **----- Start of picture text -----**<br> 60 3.0 40<br>TVJ = 100°C TVJ = 100°C<br>VR = 350 V VR = 350 V<br>50 2.5<br>30<br>40 2.0<br>IF TVJ = 150°C Qr IF = 37 A IRM IF = 37 A74 A max.<br>30 100°C 1.5 74 A max. 20 37 A<br>[A] 25°C [µC] 18.5 A37 A [A] 18.5 A<br>20 1.0<br>10<br>10 0.5<br>0 0.0 0<br>0.0 0.5 1.0 1.5 2.0 1 10 100 1000 0 200 400 600<br>VF [V] -diF /dt [A/µs] -diF [/dt] [[A/µs]]<br>Fig. 1 Forward current IF versus Fig. 2 Typ. reverse recov. charge Fig. 3 Typ. peak reverse current<br>max. forward voltage drop VF Qr versus -diF /dt IRM versus -diF /dt<br>1.4 0.6 20 1000<br>TVJ = 100°C TVJ = 125°C<br>0.5 VR = 350 V IF = 37 A<br>1.2 16 800<br>0.4 I F = 37 A tfr<br>Kf 1.0 trr 0.3 max. 18.5 A 74 A37 A VFR 12 600 [ns]<br>0.8 [µs] [V] 8 400<br>0.2<br>0.6 IRM 4 VFR 200<br>0.1 tfr<br>Qr<br>0.4 0.0 0 0<br>0 40 80 120 160 0 200 400 600 0 200 400 600<br>TVJ [°C] -diF /dt [A/µs] -diF /dt [A/µs]<br>Fig. 4 Dynamic parameters Fig. 5 Typ. recovery time Fig. 6 Typ. peak forward voltage<br>Qr, IRM versus TVJ trr versus -diF /dt VFR and tfr versus diF /dt<br>1.0<br>0.8<br>Constants for ZthJC calculation:<br>0.6 i Rthi (K/W) ti (s)<br>ZthJC 1 0.200 0.0018<br>0.4 2 0.220 0.0100<br>3 0.080 0.5000<br>[K/W]<br>0.2 4 0.300 0.0900<br>0.0<br>1 10 100 1000 10000<br>t [ms]<br>Fig. 7 Transient thermal impedance junction to case<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20201009b © 2020 IXYS all rights reserved
Updated at June 4, 2026
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