DSEE55-24N1F

**DSEE55-24N1F** 

## **HiPerFRED** 

**VRRM** _**=**_ **2x 1200 V I FAV** _**=**_ **60 A t rr** _**=**_ **40 ns** 

## High Performance Fast Recovery Diode Low Loss and Soft Recovery Phase leg 

## **Part number** 

## **DSEE55-24N1F** 

Backside: isolated 

**==> picture [152 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 2 5<br>**----- End of picture text -----**<br>


## **Features / Advantages:** 

- Planar passivated chips 

- Very low leakage current 

- Very short recovery time 

- Improved thermal behaviour 

- Very low Irm-values 

- Very soft recovery behaviour 

- Avalanche voltage rated for reliable operation 

- Soft reverse recovery for low EMI/RFI 

## **Applications:** 

- Antiparallel diode for high frequency switching devices 

- Antisaturation diode 

- Snubber diode 

- Free wheeling diode 

- Rectifiers in switch mode power supplies (SMPS) 

- Uninterruptible power supplies (UPS) 

## **Package:** i4-Pac 

   - Isolation Voltage:          V~3000 

   - Industry convenient outline 

   - RoHS compliant 

   - Epoxy meets UL 94V-0 

   - Soldering pins for PCB mounting 

   - Backside: DCB ceramic 

   - Reduced weight 

   - Advanced power cycling 

- Low Irm reduces: 

- Power dissipation within the diode 

- Turn-on loss in the commutating switch 

## **Terms and Conditions of Usage** 

The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. 

Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend 

- to perform joint risk and quality assessments; 

- the conclusion of quality agreements; 

- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. 

IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20180806c 

© 2018 IXYS all rights reserved 

**DSEE55-24N1F** 

|**Fast Diode**|**Fast Diode**|**Ratings**<br>**typ.**<br>**max.**<br>**min.**<br>**Unit**|**Ratings**<br>**typ.**<br>**max.**<br>**min.**<br>**Unit**|**Ratings**<br>**typ.**<br>**max.**<br>**min.**<br>**Unit**|**Ratings**<br>**typ.**<br>**max.**<br>**min.**<br>**Unit**|**Ratings**<br>**typ.**<br>**max.**<br>**min.**<br>**Unit**|
|---|---|---|---|---|---|---|
|**Symbol**<br>**Definition**<br>**Conditions**|||||||
|**VRSM**<br>_max. non-repetitive reverse blocking voltage_||T    =   25°C<br>VJ|||1200|V|
|**VRRM**<br>_max. repetitive reverse blocking voltage_||T    =   25°C<br>VJ|||1200|V|
|**I R**<br>_reverse current, drain current_|V    =          V<br>R<br>V    =          V<br>R<br>1200<br>1200|T    =   25°C<br>VJ<br>T    =       °C<br>VJ<br>150|||1<br>4|mA<br>mA|
|**VF**<br>_forward voltage drop_|I  =          A<br>F<br>60<br>I  =          A<br>F<br>120|T    =   25°C<br>VJ|||2.45<br>2.90|V<br>V|
||I  =          A<br>F<br>60<br>I  =          A<br>F<br>120|T    =       °C<br>VJ<br>150|||1.56<br>2.00|V<br>V|
|**I**<br>**FAV**<br>_average forward current_|T  =       °C<br>C<br>110<br>d =<br>rectangular<br>0.5|T    =       °C<br>VJ<br>175|||60|A|
|**VF0**<br>**rF**<br>_threshold voltage_<br>_slope resistance_<br>_for power loss calculation only_||T    =       °C<br>VJ<br>175|||0.97<br>6.8|V<br>mΩ|
|**R**<br>_thermal resistance junction to case_<br>**thJC**|||||0.6|K/W|
|**R**<br>_thermal resistance case to heatsink_<br>**thCH**||||0.20||K/W|
|**Ptot**<br>_total power dissipation_||T    =   25°C<br>C|||250|W|
|**IFSM**<br>t = 10 ms; (50 Hz), sine;<br>_max. forward surge current_<br>V  = 0 V<br>R||T    =   45°C<br>VJ|||800|A|
|**CJ**<br>_junction capacitance_<br>V  =         V<br>600<br>f = 1 MHz<br>R||T    =   25°C<br>VJ||48||pF|
|_reverse recovery time_<br>**IRM**<br>_max. reverse recovery current_<br>IF =<br>A;<br>60<br>-diF<br>=<br>A/µs<br>200<br>/dt<br>**trr**<br>VR =<br>V<br>600||TVJ =<br>°C<br>25<br>T<br>=<br>100°C<br>VJ||13<br>20||A<br>A|
|||TVJ =<br>°C<br>25<br>T<br>=<br>100°C<br>VJ||85<br>250||ns<br>ns|



IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20180806c 

© 2018 IXYS all rights reserved 

**DSEE55-24N1F** 

|**Ratings**<br>**Package**<br>**i4-Pac**|**Ratings**<br>**Package**<br>**i4-Pac**|**Ratings**<br>**Package**<br>**i4-Pac**|**Ratings**<br>**Package**<br>**i4-Pac**|**Ratings**<br>**Package**<br>**i4-Pac**|
|---|---|---|---|---|
|**Symbol**<br>**Definition**<br>**Conditions**|**min.**|**typ.**|**max.**|**Unit**|
|**I RMS**<br>_RMS current_<br>per terminal|||70|A|
|**TVJ**<br>_virtual junction temperature_|-55||175|°C|
|**Top**<br>_operation temperature_|-55||150|°C|
|**Tstg**<br>_storage temperature_|-55||150|°C|
|**Weight**||9||g|
|**FC**<br>_mounting force with clip_|20||120|N|
|**dSpp/App**<br>_creepage distance on surface | striking distance through air_<br>**dSpb/Apb**<br>_terminal to backside_<br>_terminal to terminal_|5.5|||mm<br>mm|
||5.1||||
|**V**<br>t = 1 second<br>t = 1 minute<br>_isolation voltage_<br>50/60 Hz, RMS; I≤1 mA<br>ISOL<br>**ISOL**|3000||V<br>V||
||2500||||



**==> picture [191 x 144] intentionally omitted <==**

**----- Start of picture text -----**<br>
Product Marking<br>UL listed<br>Logo IXYS ®<br>ISOPLUS®<br>Part No. XXXXXXXXX<br>Assembly Line Zyyww abcd<br>Date Code<br>Assembly Code<br>**----- End of picture text -----**<br>


**==> picture [215 x 78] intentionally omitted <==**

|**Ordering**|**Ordering Number**|**Marking on Product**|**Delivery Mode**|**Quantity**|**Code No.**|
|---|---|---|---|---|---|
|Standard|DSEE55-24N1F|DSEE55-24N1F|Tube|25|488739|



|**Equivalent Circuits for**|**Equivalent Circuits for**|**Equivalent Circuits for**|**Equivalent Circuits for**|**Equivalent Circuits for**|**Equivalent Circuits for**|**Equivalent Circuits for**|**Equivalent Circuits for**|**Simulation**|_* on die level_|T    =<br>VJ|175 °C|
|---|---|---|---|---|---|---|---|---|---|---|---|
|I|V0||~~R~~0|||||**Fast**<br>**Diode**||||
|||||||||||||
|**V0 max**||_threshold_|||||_voltage_|0.97|||V|
|**R0 max**||_slope resistance *_||||||4.4|||mΩ|



IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20180806c 

© 2018 IXYS all rights reserved 

**DSEE55-24N1F** 

## **Outlines i4-Pac** 

**==> picture [511 x 483] intentionally omitted <==**

**----- Start of picture text -----**<br>
A<br>Millimeter Inches<br>E A2 E1 Dim. min max min max<br>A 4.83 5.21 0.190 0.205<br>A1 2.59 3.00 0.102 0.118<br>A2 1.17 2.16 0.046 0.085<br>b 1.14 1.40 0.045 0.055<br>b2 1.47 1.73 0.058 0.068<br>b4 2.54 2.79 0.100 0.110<br>c 0.51 0.74 0.020 0.029<br>D 20.80 21.34 0.819 0.840<br>D1 14.99 15.75 0.590 0.620<br>D2 1.65 2.03 0.065 0.080<br>D3 20.30 20.70 0.799 0.815<br>E 19.56 20.29 0.770 0.799<br>E1 16.76 17.53 0.660 0.690<br>e 7.62 BSC 0.300 BSC<br>L 19.81 21.34 0.780 0.840<br>L1 2.11 2.59 0.083 0.102<br>c 2x e 2x b2 Q 5.33 6.20 0.210 0.244<br>1 3 5 R 2.54 4.57 0.100 0.180<br>A1 3x b W - 0.10 - 0.004<br>Die konvexe Form des Substrates ist typ. < 0.05 mm über<br>b4 der Kunststoffoberflächeder Bauteilunterseite<br>The convexbow of substrate is typ. < 0.05 mm over plastic<br>W surface level ofdevice bottom side<br>D2<br>Q<br>R<br>D D3 D1<br>L1<br>L<br>**----- End of picture text -----**<br>


**==> picture [509 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 2 5<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20180806c 

© 2018 IXYS all rights reserved 

**DSEE55-24N1F** 

## **Fast Diode** 

**==> picture [500 x 643] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 15.0 120<br>TVJ = 100°C TVJ = 100°C<br>VR = 600 V VR = 600 V<br>12.5<br>80<br>IF = 120 A<br>TVJ = 150°C 10.0 80 60 A<br>60 100°C 25°C Qr IF = 120 A IRM 30 A<br>IF 7.5 60 A<br>30 A<br>40 [nC] [A]<br>[A] 5.0 40<br>20<br>2.5<br>0 0.0 0<br>0 1 2 3 100 1000 0 200 400 600 800 1000<br>VF [V] -diF /dt [A/µs] -diF /dt [A/µs]<br>Fig. 1  Forward current IF vs. VF Fig. 2  Typ. reverse recovery charge Fig. 3  Typ. peak reverse current<br>Qr versus -diF /dt IRM versus -diF /dt<br>2.0 300 60 1.2<br>TVJ = 100°C TVJ = 100°C<br>VR = 600 V IF = 60 A<br>280<br>1.5<br>40 0.8<br>Kf 1.0 trr 260 IF = 120 A60 A VFR tfr<br>[ns] 240 30 A [V] [µs]<br>20 0.4<br>0.5 IRM tfr<br>220<br>Qr<br>VFR<br>0.0 200 0 0.0<br>0 40 80 120 160 0 200 400 600 800 1000 0 200 400 600 800 1000<br>TVJ [°C] -diF /dt [A/µs] -diF /dt [A/µs]<br>Fig. 4 Dynamic parameters Fig. 5  Typ. recovery time Fig. 6  Typ. peak forward voltageVFR<br>Qr, IRM versus TVJ trr versus -diF /dt and typ. forward recovery time<br>tfr versus diF /dt<br>10 [0]<br>Z<br>thJC<br>Constants for ZthJC calculation:<br>10 [-1]<br>i Rthi (K/W) ti (s)<br>[K/W] 1 0.212 0.0055<br>2 0.248 0.0092<br>3 0.063 0.0007<br>4 0.077 0.0391<br>10 [-2]<br>10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1]<br>t [s]<br>**----- End of picture text -----**<br>


Fig. 7 Transient thermal resistance junction to case 

IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20180806c 

© 2018 IXYS all rights reserved