DSEE15-12CC

**DSEE15-12CC** 

## **HiPerFRED** 

High Performance Fast Recovery Diode Low Loss and Soft Recovery 

**VRRM[=] 600 V IFAV = 15 A t rr = 25 ns** 

Phase leg 

## **Part number** 

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DSEE15-12CC 

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Backside: isolated<br>**----- End of picture text -----**<br>


## **Features / Advantages:** 

- Planar passivated chips 

- Very low leakage current 

- Very short recovery time 

- Improved thermal behaviour 

- Very low Irm-values 

- Very soft recovery behaviour 

- Avalanche voltage rated for reliable operation 

- Soft reverse recovery for low EMI/RFI 

## **Applications:** 

- Antiparallel diode for high frequency switching devices 

- Antisaturation diode 

- Snubber diode 

- Free wheeling diode 

- Rectifiers in switch mode power supplies (SMPS) 

- Uninterruptible power supplies (UPS) 

## **Package:** 

   - Housing: ISOPLUS220 

   - ●rIndustry standard outline 

   - ●rDCB isolated backside 

   - ●rIsolation Voltage 3000 V 

   - ●rEpoxy meets UL 94V-0 

   - ●rRoHS compliant 

- Low Irm reduces: 

- Power dissipation within the diode 

- Turn-on loss in the commutating switch 

|**Symbol**<br>**Definition**<br>**Conditions**|**min.**|**typ.**|**max.**|**Unit**|
|---|---|---|---|---|
|VRRM<br>_max. repetitive reverse voltage_<br>TVJ<br>°C<br>=<br>25<br>~~|~~|~~|~~|~~|~~|600|V|
|IR<br>VR =<br>TVJ<br>V<br>°C<br>=<br>TVJ<br>°C<br>=<br>VR =<br>600<br>V<br>600<br>25<br>_reverse current_<br>150<br>~~|~~<br>~~|~~|~~|~~<br>~~|~~|~~|~~<br>~~|~~|100<br>0.5|mA<br>µA|
|V F<br>TVJ =<br>°C<br>IF =<br>A<br>15<br>25<br>_forward voltage_<br>TVJ =<br>°C<br>IF =<br>A<br>15<br>IF =<br>A<br>30<br>IF =<br>A<br>30<br>150<br>~~|~~|~~|~~|~~|~~|2.04<br>2.25|V<br>V|
||||1.35<br>1.59|V<br>V|
|I<br>TC =<br>140°C<br>d =<br>rectangular<br>0.5<br>FAV<br>_average forward current_|||15|A|
|VF0<br>TVJ =<br>175°C<br>r F<br>_threshold voltage_<br>_slope resistance_<br>_for power loss calculation only_<br>~~}~~<br>~~|~~|~~|~~|~~|~~|0.99<br>15|V<br>mΩ|
|R<br>_thermal resistance junction to case_<br>thJC<br>~~}~~<br>~~|~~|~~|~~|~~|~~|1.60|K/W|
|TVJ<br>_virtual junction temperature_|-55||175|°C|
|Ptot<br>TC<br>°C<br>=<br>25<br>_total power dissipation_|||95|W|
|IFSM<br>t =  10 ms<br>TVJ =<br>45°C<br>_max. forward surge current_<br>(50 Hz), sine<br>ry|ry|ry|110|A|
|TVJ =<br>°C<br>_reverse recovery time_<br>IRM<br>_max. reverse recovery current_<br>IF =<br>A;<br>15<br>25<br>T<br>=<br>100°C<br>VJ<br>-diF<br>=<br>A/µs<br>600<br>/dt<br>t rr<br>VR =<br>V<br>300<br>TVJ =<br>°C<br>25<br>T<br>=<br>100°C<br>VJ<br>ry|ry|11<br>19<br>25<br>83<br>ry||ns<br>A<br>A<br>ns|
|CJ<br>_junction capacitance_<br>V =<br>V;<br>T<br>f = 1 MHz<br>=<br>°C<br>25<br>R<br>VJ<br>400||12||pF|



IXYS reserves the right to change limits, conditions and dimensions. 

20110215a 

Data according to IEC 60747and per diode unless otherwise specified 

© 2011 IXYS all rights reserved 

## **DSEE15-12CC** 

|**Symbol**<br>**Definition**<br>**Ratings**<br>**typ.**<br>**max.**<br>**min.**<br>**Conditions**<br>**Unit**|**Symbol**<br>**Definition**<br>**Ratings**<br>**typ.**<br>**max.**<br>**min.**<br>**Conditions**<br>**Unit**|**Symbol**<br>**Definition**<br>**Ratings**<br>**typ.**<br>**max.**<br>**min.**<br>**Conditions**<br>**Unit**|**Symbol**<br>**Definition**<br>**Ratings**<br>**typ.**<br>**max.**<br>**min.**<br>**Conditions**<br>**Unit**|**Symbol**<br>**Definition**<br>**Ratings**<br>**typ.**<br>**max.**<br>**min.**<br>**Conditions**<br>**Unit**|
|---|---|---|---|---|
|IRMS<br>per terminal<br>_RMS current_|||35|A|
|R thCH<br>_thermal resistance case to heatsink_||0.50||K/W|
|Tstg<br>_storage temperature_|-55||150|°C|
|Weight||2||g|
|FC<br>_mounting force with clip_|20||60|N|
|VISOL<br>t = 1 second<br>t = 1 minute<br>_isolation voltage_|3600<br>3000|||V<br>V|
|d Spp/App<br>_creepage | striking distance  on  surface | through air          terminal to terminal_<br>d Spb/Apb<br>_creepage | striking distance  on  surface | through air          terminal to backside_|1.0<br>3.0|||mm<br>mm|



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Product Marking<br>UL listed<br>Logo IXYS<br>Part No.<br>Date Code<br>Order Code abcd<br>Ordering Part Name Marking on Product Delivering Mode Base Qty Code Key<br>Standard DSEE15-12CC DSEE15-12CC Tube 50 500725<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, conditions and dimensions. 

20110215a 

Data according to IEC 60747and per diode unless otherwise specified 

© 2011 IXYS all rights reserved 

**DSEE15-12CC** 

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Outlines ISOPLUS220<br>E A E1<br>A2<br>Millimeters Inches<br>Dim.<br>min max min max<br>A 4.00 5.00 0.157 0.197<br>A1 2.50 3.00 0.098 0.118<br>A2 1.60 1.80 0.063 0.071<br>b 0.90 1.30 0.035 0.051<br>b2 2.35 2.55 0.093 0.100<br>b4 1.25 1.65 0.049 0.065<br>c 0.70 1.00 0.028 0.039<br>D 15.00 16.00 0.591 0.630<br>D1 12.00 13.00 0.472 0.512<br>1 2 3<br>D2 1.10 1.50 0.043 0.059<br>2x b2 D3 14.90 15.50 0.587 0.610<br>E 10.00 11.00 0.394 0.433<br>E1 7.50 8.50 0.295 0.335<br>e 2.54 BSC 0.100 BSC<br>L 13.00 14.50 0.512 0.571<br>L1 3.00 3.50 0.118 0.138<br>T° 42.5 47.5<br>W - 0.1 - 0.004<br>Die konvexe Form des Substrates ist typ. < 0.04 mm über der<br>Kunststoffoberfläche der Bauteilunterseite<br>3x b c b4 The convex bow of substrate is typ. < 0.04 mm over plastic<br>surface level of device bottom side<br>2x e A1<br>Die Gehäuseabmessungen entsprechen dem Typ TO-273<br>gemäß JEDEC außer D und D1.<br>This drawing will meet all dimensions requiarement of JEDEC<br>outline TO-273 except D and D1.<br>W<br>T<br>D2<br>D D3 D1<br>L1<br>L<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, conditions and dimensions. 

20110215a 

Data according to IEC 60747and per diode unless otherwise specified 

© 2011 IXYS all rights reserved 

**DSEE15-12CC** 

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40 2000 40<br>30 1500 30<br>IF Qr IRM<br>20 1000 20<br>[A] [µC] [A]<br>10 500 10<br>0 0 0<br>0 1 2 100 1000 0 200 400 600 800 1000<br>VF [V] -diF /dt   [A/µs] -diF /dt [A/µs]<br>Fig. 1 Forward current IF vs. VF Fig. 2 Typ. reverse recovery charge Fig. 3 Typ. peak reverse current<br>Qrr versus -diF /dt IRM versus -diF /dt<br>2.0 120 20 1.6<br>110<br>1.5 15 1.2<br>Kf 1.0 trr 100 VFR 10 0.8 tfr<br>[ns] 90 [V] [µs]<br>0.5 5 0.4<br>80 VFR<br>0.0 70 0 trr 0.0<br>0 40 80 120 160 0 200 400 600 800 1000 0 200 400 600 800 1000<br>TVJ [°C] -diF /dt [A/µs] -diF /dt   [A/µs]<br>Fig. 4 Dynamic parameters Fig. 5 Typ. recovery time Fig. 6 Typ. peak forward voltage VFR<br>Qr, IRM versus TVJ trr versus -diF /dt and typ. forward recovery time<br>tfr versus diF /dt<br>10<br>Constants for ZthJC calculation:<br>ZthJC i Rthi (K/W) ti (s)<br>1 1 0.908 0.0052<br>[K/W] 2 0.350 0.0003<br>3 0.342 0.017<br>0.1<br>0.001 0.01 0.1 1<br>t [s]<br>Fig. 7 Transient thermal impedance junction to case<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, conditions and dimensions. 

20110215a 

Data according to IEC 60747and per diode unless otherwise specified 

© 2011 IXYS all rights reserved