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DSEC30-06A
Fast / Ultrafast Diode, 600 V, 15 A, Dual Common Cathode, 2.03 V, 35 ns, 110 A
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- SVHC: No SVHC (12-Jan-2017)
- No. of Pins: 3 Pin
- Product Range: HiPerFRED Series
- Qualification: -
- Diode Case Style: TO-247AD
- Diode Configuration: Dual Common Cathode
- Forward Voltage Max: 2.03V
- Forward Surge Current: 110A
- Reverse Recovery Time: 35ns
- Average Forward Current: 15A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 600V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 3.39 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**DSEC30-06A** ## **HiPerFRED** VRRM = 600 V I FAV = 2x 15 A[t] rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode ## **Part number** DSEC30-06A Backside: cathode 1 2 3 ## **Features / Advantages:** - Planar passivated chips - Very low leakage current - Very short recovery time - Improved thermal behaviour - Very low Irm-values - Very soft recovery behaviour - Avalanche voltage rated for reliable operation - Soft reverse recovery for low EMI/RFI ## **Applications:** - Antiparallel diode for high frequency switching devices - Antisaturation diode - Snubber diode - Free wheeling diode - Rectifiers in switch mode power supplies (SMPS) - Uninterruptible power supplies (UPS) ## **Package:** TO-247 - Industry standard outline - RoHS compliant - Epoxy meets UL 94V-0 - Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131120b © 2013 IXYS all rights reserved **DSEC30-06A** |**Fast Diode**|**Fast Diode**|Ratings|Ratings|Ratings|Ratings|Ratings| |---|---|---|---|---|---|---| |Symbol<br>Definition<br>Conditions|||min.|typ.|max.|Unit| |VRSM<br>_max. non-repetitive reverse blocking voltage_||T = 25°C<br>VJ|||600|V| |VRRM<br>_max. repetitive reverse blocking voltage_||T = 25°C<br>VJ|||600|V| |IR<br>_reverse current, drain current_|V = V<br>R<br>V = V<br>R<br>600<br>600|T = 25°C<br>VJ<br>T = °C<br>VJ<br>150|||100<br>0.5|mA<br>µA| |V F<br>_forward voltage drop_|I = A<br>F<br>15<br>I = A<br>F<br>30|T = 25°C<br>VJ|||2.03<br>2.24|V<br>V| ||I = A<br>F<br>15<br>I = A<br>F<br>30|T = °C<br>VJ<br>150|||1.34<br>1.57|V<br>V| |I<br>FAV<br>_average forward current_|T = °C<br>C<br>140<br>d =<br>rectangular<br>0.5|T = °C<br>VJ<br>175|||15|A| |VF0<br>r F<br>_threshold voltage_<br>_slope resistance_<br>_for power loss calculation only_||T = °C<br>VJ<br>175|||0.99<br>14.3|V<br>mΩ| |R<br>_thermal resistance junction to case_<br>thJC|||||1.6|K/W| |R<br>_thermal resistance case to heatsink_<br>thCH||||0.25||K/W| |Ptot<br>_total power dissipation_||T = 25°C<br>C|||95|W| |IFSM<br>t = 10 ms; (50 Hz), sine;<br>_max. forward surge current_<br>V = 0 V<br>R||T = 45°C<br>VJ|||110|A| |CJ<br>_junction capacitance_<br>V = V<br>400<br>f = 1 MHz<br>R||T = 25°C<br>VJ||12||pF| |_reverse recovery time_<br>IRM<br>_max. reverse recovery current_<br>IF =<br>A;<br>15<br>-diF<br>=<br>A/µs<br>200<br>/dt<br>t rr<br>VR =<br>V<br>300||TVJ =<br>°C<br>25<br>T<br>= 100°C<br>VJ||5<br>7||A<br>A| |||TVJ =<br>°C<br>25<br>T<br>= 100°C<br>VJ||35<br>95||ns<br>ns| |EAS<br>IAS =<br>A<br>L =<br>µH<br>1<br>180<br>_non-repetitive avalanche energy_||T<br>=<br>°C<br>25<br>VJ|||0.1|mJ| |IAR<br>VA =<br>f = 10 kHz<br>1.5·VR typ.:<br>_repetitive avalanche current_|||||0.1|A| IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131120b © 2013 IXYS all rights reserved **DSEC30-06A** |Ratings<br>**Package**<br>**TO-247**|Ratings<br>**Package**<br>**TO-247**|Ratings<br>**Package**<br>**TO-247**|Ratings<br>**Package**<br>**TO-247**|Ratings<br>**Package**<br>**TO-247**| |---|---|---|---|---| |Symbol<br>Definition<br>Conditions|min.|typ.|max.|Unit| |I RMS<br>_RMS current_<br>per terminal<br>1)|||50|A| |TVJ<br>_virtual junction temperature_|-55||175|°C| |Top<br>_operation temperature_|-55||150|°C| |Tstg<br>_storage temperature_|-55||150|°C| |Weight||6||g| |M D<br>_mounting torque_<br>FC<br>_mounting force with clip_|0.8||1.2|| ||20|||| ## Product Marking **==> picture [119 x 119] intentionally omitted <==** **----- Start of picture text -----**<br> Logo IXYS<br>Part No. XXXXXXXXX<br>Assembly Line Zyyww<br>abcd<br>Assembly Code<br>Date Code<br>**----- End of picture text -----**<br> **==> picture [216 x 77] intentionally omitted <==** |Ordering||Part Number|Markingon Product|Markingon Product|DeliveryMode|Quantity|Code No.| |---|---|---|---|---|---|---|---| |Standard||DSEC30-06A|DSEC30-06A||Tube|30|473502| ||||||||| |||Similar Part|Package|Voltage class|||| |||DSEC30-06B|TO-247AD(3)|600|||| |||DSEC29-06AC|ISOPLUS220AB(3)|600|||| |**Equivalent Circuits for Simulation**<br>T =<br>VJ<br>175 °C<br>_* on die level_|**Equivalent Circuits for Simulation**<br>T =<br>VJ<br>175 °C<br>_* on die level_| |---|---| |I|V0<br>~~R~~0| IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131120b © 2013 IXYS all rights reserved **DSEC30-06A** ## **Outlines TO-247** |||||||||||||||E|E|E||||||||||||A|A|A|A2||Ø|Ø|P|P||||ØP1|ØP1|ØP1|D2|D2|||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| ||||||||||||||||||||||||||||||||||||||||||||||||||| ||||||||||||||||||||||||||||||||||||||||||||||||||| |Q||||||||||||||||||||||||||||||||S|||||||||||||**Sym.**|**Inches**<br>**min.**<br>**max.**||**Millimeter**<br>**min.**<br>**max.**|| ||||||||||||||||||||||||||||||||||||||||||||||A|0.185|0.209|4.70|5.30| ||||||||||||||||||||||||||||||||||||||||||||D1||A1|0.087|0.102|2.21|2.59| ||||||||||||||||||||||||||D||||||||||||||||||||A2|0.059|0.098|1.50|2.49| |2xE2|||||||||||||||||||||||||||||||||||||||||||||D<br>E|0.819<br>0.610|0.845<br>0.640|20.79<br>15.48|21.45<br>16.24| |||||||||||||||||||||||||||||||||||||||||**4**|||||E2|0.170|0.216|4.31|5.48| ||||||||**1**||||||**2**|||||**3**|||||||||||||||||||||||||||e<br>L|0.215<br>0.780|BSC<br>0.800|5.46<br>19.80|BSC<br>20.30| ||||||||||||||||||||||||||||||||||||||||||||||L1|-|0.177|-|4.49| ||L1||||||||||||||||||||||||||||||||||||E1||||||||Ø P|0.140|0.144|3.55|3.65| ||||||||||||||||||||||||||||||||||||||||||||||Q|0.212|0.244|5.38|6.19| ||||||||||||||||||||||||||||||||||||||||||||||S|0.242|BSC|6.14|BSC| ||||||||||||||||||||||||||L||||||||||||||||||||b|0.039|0.055|0.99|1.40| ||||||||||||||||||||||||||||||||||||||||||||||b2|0.065|0.094|1.65|2.39| ||||||||||||||||||||||||||||||||||||||||||||||b4|0.102|0.135|2.59|3.43| ||2xb2|||||||||b4|||||||||||||||3xb||C|||A1|||||||||||||||c<br>D1<br>D2<br>E1|0.015<br>0.515<br>0.020<br>0.530|0.035<br>-<br>0.053<br>-|0.38<br>13.07<br>0.51<br>13.45|0.89<br>-<br>1.35<br>-| |||||||||||2x||e|||||||||||||||||||||||||||||||||Ø P1|-|0.29|-|7.39| ||||||||||||||||||||||||||||||||||||||||||||||||||| **==> picture [483 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> 1 2 3<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131120b © 2013 IXYS all rights reserved **DSEC30-06A** ## **Fast Diode** **==> picture [508 x 660] intentionally omitted <==** **----- Start of picture text -----**<br> 40 2000 40<br>TVJ = 100°C TVJ = 100°C<br>VR = 300 V V R = 300 V<br>TVJ = 150°C<br>30 100°C 1500 30<br>25°C<br>IF = 30A<br>IF Qr IF = 30A IRM 7.5 A15 A<br>20 1000 15 A 20<br>[A] [μC] 7.5 A [A]<br>10 500 10<br>0 0 0<br>0 1 2 100 1000 0 200 400 600 800 1000<br>VF [V] -diF /dt [A/μs] -diF /dt [A/μs]<br>Fig. 1 Forward current Fig. 2 Typ. reverse recov. charge Fig. 3 Typ. peak reverse current<br>IF versus VF Qr versus -diF /dt IRM versus -diF/dt<br>2.0 120 20 1.6<br>TVJ = 100°C TVJ = 100°C<br>VR = 300 V V I F = 15 A<br>110<br>1.5 15 1.2<br>trr 100 I F = 30A 15 A VFR trr<br>Kf 1.0 7.5 A 10 0.8<br>[ns] 90 [V]<br>IRM [μs]<br>0.5 5 0.4<br>Qr 80 VFR trr<br>0.0 70 0 0.0<br>0 40 80 120 160 0 200 400 600 800 1000 0 200 400 600 800 1000<br>TVJ [°C] -diF /dt [A/μs] -diF [/dt] [[A/μs]]<br>Fig. 4 Dynamic parameters Fig. 5 Typ. recovery time Fig. 6 Typ. peak forward voltage<br>Qr, IRM versus TVJ trr versus -diF /dt VFR and tfr versus diF /dt<br>10<br>Constants for ZthJC calculation:<br>1<br>i Rthi (K/W) ti (s)<br>ZthJC<br>1 0.908 0.0052<br>0.1 2 0.350 0.0003<br>[K/W] 3 0.342 0.017<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1<br>t [s]<br>Fig. 7 Transient thermal impedance junction to case<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131120b © 2013 IXYS all rights reserved
Updated at June 4, 2026
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