DPLS160-7

**DPLS160** 

## **LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR** 

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## **Features** 

- Epitaxial Planar Die Construction 

- Complementary NPN Type Available (DNLS160) 

- Surface Mount Package Suited for Automated Assembly 

- **Lead Free/RoHS Compliant (Note 1)** 

- **"Green Device" (Note 2)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

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SOT-23<br>**----- End of picture text -----**<br>


## **Mechanical Data** 

- Case: SOT-23 

- Case Material: Molded Plastic, “Green” Molding Compound.  UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity:  Level 1 per J-STD-020D 

- Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 

- Marking Information: See Page 4 

- Ordering Information: See Page 4 

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- Weight: 0.008 grams (approximate) 

## **Maximum Ratings** @TA = 25°C unless otherwise specified 

|**Maximum Ratingsgss**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol **|**Value**|**Unit**|
|Collector-Base Voltage|VCBO|-80|V|
|Collector-Emitter Voltage|VCEO|-60|V|
|Emitter-Base Voltage|VEBO|-5|V|
|Collector Current - Continuous|IC|-1|A|
|Peak Pulse Collector Current|ICM|-2|A|
|Base Current(DC)|IB|-300|mA|



## **Thermal Characteristics** 

|**Thermal Characteristics **|**Thermal Characteristics **|**Thermal Characteristics **|**Thermal Characteristics **|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol **|**Value**|**Unit**|
|Power Dissipation(Note 3) @TA= 25°C|PD|300|mW|
|Thermal Resistance,Junction to Ambient(Note 3) @TA= 25°C|RθJA|417|°C/W|
|Operating and Storage Temperature Range|TJ, TSTG|-55 to +150|°C|



- Notes: 1.   No purposefully added lead. 

   2.   Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 

   3.   Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 

DS31389 Rev. 4 - 2 

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## **Electrical Characteristics** @TA = 25°C unless otherwise specified 

|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified||||
|---|---|---|---|---|---|---|
|**Characteristic**|**Symbol **|**Min**|**Typ**|**Max **|**Unit**|**Test Condition **|
|**OFFCHARACTERISTICS (Note 4)**|||||||
|Collector-Base Breakdown Voltage|V(BR)CBO|-80|⎯|⎯|V|IC= -100μA,IE= 0|
|Collector-Emitter Breakdown Voltage|V(BR)CEO|-60|⎯|⎯|V|IC= -10mA,IB= 0|
|Emitter-Base Breakdown Voltage|V(BR)EBO|-5|⎯|⎯|V|IE= -100μA,IC= 0|
|Collector Cutoff Current|ICBO|⎯|⎯|-100<br>-50|nA<br>μA|VCB= -60V, IE= 0<br>VCB= -60V,IE= 0,TA= 150°C|
|Collector Cutoff Current|ICES|⎯|⎯|-100|nA|VCE= -60V,VBE= 0|
|Emitter Cutoff Current|IEBO|⎯|⎯|-100|nA|VEB= -5V,IC= 0|
|**ON CHARACTERISTICS (Note 4)**|||||||
|DC Current Gain<br>~~ee~~|hFE<br>~~ee~~|200<br>150<br>100<br>~~ee~~|325<br>250<br>180<br>~~ee~~|⎯<br>⎯<br>⎯<br>~~ee~~|V<br>~~ee~~|VCE= -5V, IC= -1mA<br>VCE= -5V, IC= -500mA<br>VCE= -5V,IC= -1A<br>~~ee~~|
|Collector-Emitter Saturation Voltage<br>~~Oe~~|VCE(SAT)<br>~~Oe~~|⎯<br>⎯<br>⎯<br>~~Oe~~|-90<br>-90<br>-160<br>~~Oe~~|-160<br>-175<br>-330<br>~~Oe~~|mV<br>~~Oe~~|IC= -100mA, IB= -1mA<br>IC= -500mA, IB= -50mA<br>IC= -1A,IB= -100mA<br>~~Oe~~|
|Collector-Emitter Saturation Resistance<br>~~Oe~~|RCE(SAT)<br>~~Oe~~|⎯<br>~~Oe~~|160<br>~~Oe~~|330<br>~~Oe~~|mΩ<br>~~Oe~~|IC= -1A,IB= -100mA<br>~~Oe~~|
|Base-Emitter Saturation Voltage|VBE(SAT)|⎯|-0.95|-1.1|V|IC= -1A,IB= -50mA|
|Base-Emitter Turn On Voltage|VBE(ON)|⎯|-0.82|-0.9|V|VCE= -5V,IC= -1A|
|**SMALLSIGNALCHARACTERISTICS**|||||||
|Output Capacitance|Cobo|⎯|10|15|pF|VCB= -10V,f = 1.0MHz|
|Current Gain-Bandwidth Product|fT|150|220|⎯|MHz|VCE= -10V,IC= -50mA,f = 100MHz|



Notes: 4.  Measured under pulsed conditions. Pulse width = 300μs.  Duty cycle ≤2%. 

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400 1.5<br>350<br>1.2 I B  = -10mA<br>300 S aneneerer TT]——LE—_<br>IB = -8mA<br>250 CREPE 0.9 Za IB = -6mA<br>200<br>IB = -4mA<br>CONE J<br>150 0.6<br>COATT (—<br>100 IB = -2mA<br>0.3<br>HERE] ==<br>50<br>0 0<br>0 creer 25 50 75 100 125 150 175 200 0 EL 1 EE 2 3 4 5<br>TA, AMBIENT TEMPERATURE (°C) -VCE, COLLECTOR-EMITTER VOLTAGE (V)<br>Fig. 1 Maximum Power Dissipation vs.  Fig. 2 Typical Collector Current<br>Ambient Temperature vs. Collector-Emitter Voltage<br>, POWER DISSIPATION (mW)PD COLLECTOR CURRENT (A)-IC,<br>**----- End of picture text -----**<br>


DS31389 Rev. 4 - 2 

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600 II | 0.4 fees LAME ATE I<br>0.3<br>400 cra ann | BALAN AR<br>aaa | 0.2 A<br>BAIN 1AN<br>200 Tri MATT) CUMA<br>\\ Mate y)<br>0.1<br>SCOTT UM<br>lee UIT\ TMTA WAgaTaAllOl<br>0 UII LIME UV 0 =———TTT=-55°C<br>0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10<br>-IC, COLLECTOR CURRENT (A) -IC, COLLECTOR CURRENT (A)<br>Fig. 3 Typical DC Current Gain vs. Collector Current<br>Fig. 4 Typical Cvs o. leenCollector emerCurrent Saturation Voltage<br>“CE 1 . 0 aTE aTTT 1.21.0 aPEATECUTIEA ETI UU<br>a |eee PIE | TE tes eZpeLV A<br>o a t —_——UE ell 0.8 esani Pe All<br>pe TA = -55°C et ry<br>r yPetteee eens ail) AA 0.6 peeret TA = 25°C | ea I<br>0 . 4 recapssepel EP coy ll, Emi LLLeen LEICU 0.4 ATTI TA = 85°C Le ELAINECTCLUTI<br>Peter T A  = 150°C I C /I B  = 20<br>02 | LIM LTA TUT 0.2 Hh cit<br>TO| eth mil PUTINHL Hill<br>TAT UT EH<br>0<br>ol TTI LEVINE ELLIE CUI EE TATIIME LTE EET TTT<br>0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10<br>-IC, COLLECTOR CURRENT (A) -IC, COLLECTOR CURRENT (A)<br>Fig . 5 Typical Base Emitter Tur n- On Voltage<br>Fig. 6 Typical Base-Emitter Saturation Voltage<br>vs . Collector Current<br>vs. Collector Current<br>120 250<br>100 CoN Cibo UT f = 1MHz ape eZenne<br>200<br>80 100); i St 00) a a ann<br>150<br>60 CHIEN\<br>100<br>CUT<br>40<br>niin Tl<br>Cobo 50 VCE = -10V<br>UN LLL f = 100MHz<br>200 TIMI CitiIN 0<br>0.01 0.1 1 10 100 0 10 20 30 40 50 60 70 80 90 100<br>VR, REVERSE VOLTAGE (V) IC, COLLECTOR CURRENT (mA)<br>Fig. 7 Typical Total Capacitance Fig. 8 Typical Gain-Bandwidth Product<br>vs. Collector Current<br>, COLLECTOR EMITTER<br>, DC CURRENT GAIN<br>FE<br>h<br>CE(SAT) SATURATION VOLTAGE (V)<br>-V<br>, BASE EMITTER TURN-ON VOLTAGE (V) , BASE-EMITTER SATURATION VOLTAGE (V)<br>BE(ON)<br>-V<br>BE(SAT)<br>-V<br>CAPACITANCE (pF)<br>, CURRENT GAIN-BANDWIDTH PRODUCT (MHz)<br>fT<br>**----- End of picture text -----**<br>


DS31389 Rev. 4 - 2 

DPLS160 © Diodes Incorporated 

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Ordering Information    (Note 5)<br>Device Packaging Shipping<br>DPLS160-7  SOT-23  3000/Tape & Reel<br>Notes:  5.  For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.<br>Marking Information<br>PK1 = Product Type Marking Code<br>YM = Date Code Marking<br>PK1 Y = Year ex: U = 2007<br>M = Month ex: 9 = September<br>Date Code Key<br>Year 2008 2009 2010  2011  2012  2013  2014  2015<br>Code V  W  X  Y  Z  A  B  C<br>Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec<br>Code 1  2  3  4  5  6  7  8  9  O  N  D<br>[+—-} — ~<br>: ——<br>Package Outline Dimensions<br>A<br>SOT-23<br>Dim  Min  Max<br>A  0.37  0.51<br>B C B  1.20 1.40<br>C 2.30 2.50<br>D  0.89 1.03<br>F  0.45 0.60<br>G<br>G 1.78 2.05<br>H<br>H  2.80 3.00<br>J 0.013 0.10<br>K<br>M K  0.903 1.10<br>L  0.45 0.61<br>J M  0.085 0.180<br>D F L<br>α 0°  8°<br>All Dimensions in mm<br>a Suggested Pad Layout<br>Y Dimensions Value (in mm)<br>Z  2.9<br>Z C X  0.8<br>Y  0.9<br>C 2.0<br>E  1.35<br>X E<br>eae<br>YM<br>NEW PRODUCT<br>**----- End of picture text -----**<br>


IMPORTANT NOTICE 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. 

## LIFE SUPPORT 

Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. 

DS31389 Rev. 4 - 2 

DPLS160 © Diodes Incorporated 

4 of 4 **www.diodes.com**