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DPG60IM300PC
Fast / Ultrafast Diode, 300 V, 60 A, Single, 1.43 V, 35 ns, 550 A
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- SVHC: No SVHC (12-Jan-2017)
- No. of Pins: 3 Pin
- Product Range: HiPerFRED Series
- Qualification: -
- Current, Ifs max: 550A
- Diode Case Style: TO-263 (D2PAK)
- Diode Configuration: Single
- Forward Voltage Max: 1.43V
- Forward Surge Current: 550A
- Reverse Recovery Time: 35ns
- Forward Current If(AV): 60A
- Forward Voltage VF Max: 1.43V
- Average Forward Current: 60A
- Operating Temperature Max: 175°C
- Reverse Recovery Time trr Max: 35ns
- Repetitive Peak Reverse Voltage: 300V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 4.68 € |
| Current stock | 500+ |
| Lead time | 30 days |
Datasheet
## **DPG60IM300PC** ## **HiPerFRED²** VRRM = 300 V I FAV = 60 A[t] rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode ## **Part number** DPG60IM300PC Backside: cathode **==> picture [133 x 31] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>2/4<br>3<br>**----- End of picture text -----**<br> ## **Features / Advantages:** - Planar passivated chips - Very low leakage current - Very short recovery time - Improved thermal behaviour - Very low Irm-values - Very soft recovery behaviour - Avalanche voltage rated for reliable operation - Soft reverse recovery for low EMI/RFI ## **Applications:** - Antiparallel diode for high frequency switching devices - Antisaturation diode - Snubber diode - Free wheeling diode - Rectifiers in switch mode power supplies (SMPS) - Uninterruptible power supplies (UPS) ## **Package:** TO-263 (D2Pak) - Industry standard outline - RoHS compliant - Epoxy meets UL 94V-0 - Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131125a © 2013 IXYS all rights reserved ## **DPG60IM300PC** |**Fast Diode**|**Fast Diode**|Ratings<br>typ.<br>max.<br>min.<br>Unit|Ratings<br>typ.<br>max.<br>min.<br>Unit|Ratings<br>typ.<br>max.<br>min.<br>Unit|Ratings<br>typ.<br>max.<br>min.<br>Unit|Ratings<br>typ.<br>max.<br>min.<br>Unit| |---|---|---|---|---|---|---| |Symbol<br>Definition<br>Conditions||||||| |VRSM<br>_max. non-repetitive reverse blocking voltage_||T = 25°C<br>VJ|||300|V| |VRRM<br>_max. repetitive reverse blocking voltage_||T = 25°C<br>VJ|||300|V| |IR<br>_reverse current, drain current_|V = V<br>R<br>V = V<br>R<br>300<br>300|T = 25°C<br>VJ<br>T = °C<br>VJ<br>150|||1<br>0.35|mA<br>µA| |V F<br>_forward voltage drop_|I = A<br>F<br>60<br>I = A<br>F<br>120|T = 25°C<br>VJ|||1.43<br>1.78|V<br>V| ||I = A<br>F<br>60<br>I = A<br>F<br>120|T = °C<br>VJ<br>150|||1.14<br>1.53|V<br>V| |I<br>FAV<br>_average forward current_|T = °C<br>C<br>135<br>d =<br>rectangular<br>0.5|T = °C<br>VJ<br>175|||60|A| |VF0<br>r F<br>_threshold voltage_<br>_slope resistance_<br>_for power loss calculation only_||T = °C<br>VJ<br>175|||0.69<br>6.4|V<br>mΩ| |R<br>_thermal resistance junction to case_<br>thJC|||||0.45|K/W| |R<br>_thermal resistance case to heatsink_<br>thCH||||0.25||K/W| |Ptot<br>_total power dissipation_||T = 25°C<br>C|||335|W| |IFSM<br>t = 10 ms; (50 Hz), sine;<br>_max. forward surge current_<br>V = 0 V<br>R||T = 45°C<br>VJ|||550|A| |CJ<br>_junction capacitance_<br>V = V<br>150<br>f = 1 MHz<br>R||T = 25°C<br>VJ||80||pF| |_reverse recovery time_<br>IRM<br>_max. reverse recovery current_<br>IF =<br>A;<br>60<br>-diF<br>=<br>A/µs<br>200<br>/dt<br>t rr<br>VR =<br>V<br>200||TVJ =<br>°C<br>25<br>T<br>= 125°C<br>VJ||3.5<br>9||A<br>A| |||TVJ =<br>°C<br>25<br>T<br>= 125°C<br>VJ||35<br>65||ns<br>ns| IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131125a © 2013 IXYS all rights reserved **DPG60IM300PC** |Ratings<br>**Package**<br>**TO-263 (D2Pak)**|Ratings<br>**Package**<br>**TO-263 (D2Pak)**|Ratings<br>**Package**<br>**TO-263 (D2Pak)**|Ratings<br>**Package**<br>**TO-263 (D2Pak)**|Ratings<br>**Package**<br>**TO-263 (D2Pak)**|Ratings<br>**Package**<br>**TO-263 (D2Pak)**| |---|---|---|---|---|---| |Symbol<br>Definition<br>Conditions||min.|typ.|max.|Unit| |I RMS<br>_RMS current_<br>per terminal<br>1)||||35|A| |TVJ<br>_virtual junction temperature_||-55||175|°C| |Top<br>_operation temperature_||-55||150|°C| |Tstg<br>_storage temperature_||-55||150|°C| |Weight|||2||g| |FC<br>_mounting force with clip_||20||N<br>60|| |1)IRMSis typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product<br>with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact.|||||| 1) IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact. **==> picture [192 x 142] intentionally omitted <==** **----- Start of picture text -----**<br> Product Marking<br>Part No. XXXXXXXXX<br>Logo IXYS Zyyww<br>Assembly Line<br>Date Code 000000<br>Assembly Code<br>**----- End of picture text -----**<br> Part number D = Diode P = HiPerFRED G = extreme fast 60 = Current Rating [A] IM = Single Diode 300 = Reverse Voltage [V] PC = TO-263AB (D2Pak) (2) |Ordering||Part Number|Markingon Product|Markingon Product|DeliveryMode|Quantity|Code No.| |---|---|---|---|---|---|---|---| |Standard||DPG60IM300PC|DPG60IM300PC||Tape & Reel|800|502404| ||||||||| |||Similar Part|Package|Voltage class|||| |||DPG60I300HA|TO-247AD(2)|300|||| **Equivalent Circuits for Simulation** _* on die level_ T =VJ 175 °C I V0 ~~R~~ 0 Fast Diode V 0 max _threshold voltage_ 0.69 V R0 max _slope resistance *_ 3.2 mΩ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131125a © 2013 IXYS all rights reserved **DPG60IM300PC** **==> picture [509 x 503] intentionally omitted <==** **----- Start of picture text -----**<br> Outlines TO-263 (D2Pak)<br>Millimeter Inches<br>Dim.<br>min max min max<br>A 4.06 4.83 0.160 0.190<br>W A1 typ. 0.10 typ. 0.004<br>A A2 2.41 0.095<br>c2 Supplier� b 0.51 0.99 0.020 0.039<br>Option<br>E b2 1.14 1.40 0.045 0.055<br>c 0.40 0.74 0.016 0.029<br>c2 1.14 1.40 0.045 0.055<br>A1 D 8.38 9.40 0.330 0.370<br>D1 8.00 8.89 0.315 0.350<br>4 D2 2.5 0.098<br>1 2 3<br>E 9.65 10.41 0.380 0.410<br>E1 6.22 8.50 0.245 0.335<br>e 2,54 BSC 0,100 BSC<br>c e1 4.28 0.169<br>2x e 3x b2 2x b H 14.61 15.88 0.575 0.625<br>10.92 L 1.78 2.79 0.070 0.110<br>(0.430) mm (Inches) E1 L1 1.02 1.68 0.040 0.066<br>typ. typ.<br>W 0.040 0.002<br>0.02 0.0008<br>All dimensions conform with<br>and/or within JEDEC standard.<br>1.78<br>(0.07)<br>2.54 (0.100) Recommended min. foot print<br>L1<br>D1<br>D<br>H<br>L L2<br>9.02<br>(0.355)<br>3.81<br>(0.150)<br>3.05<br>(0.120)<br>**----- End of picture text -----**<br> **==> picture [483 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>2/4<br>3<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131125a © 2013 IXYS all rights reserved **DPG60IM300PC** ## **Fast Diode** **==> picture [508 x 660] intentionally omitted <==** **----- Start of picture text -----**<br> 120 0.7 20<br>18<br>100 0.6 IF = 120 A<br>16 60 A<br>I F = 120 A 30 A<br>80<br>60 A 14<br>0.5<br>IF 60 Qrr 30 A IRM 12<br>[A] TVJ = 150°C [μC] 0.4 [A] 10<br>40<br>8<br>0.3<br>20 25°C TVVJR = 200 V = 125°C 6 VTVJR = 125°C= 200 V<br>0.2 4<br>0.0 0.4 0.8 1.2 1.6 2.0 0 200 400 600 0 200 400 600<br>VF [V] -diF [/dt] [[A/μs]] -diF /dt [A/μs]<br>Fig. 1 Forward current Fig. 2 Typ. reverse recov. charge Fig. 3 Typ. reverse recovery current<br>IF versus VF Qrr versus -diF /dt IRM versus -diF /dt<br>1.4 80 1000 10<br>1.2 VTVJR = 200 V = 125°C 900 tfr T V VJR = 200 V = 125°C 9<br>IF = 60 A<br>70 800 8<br>1.0 VFR<br>700 7<br>trr tfr VFR<br>Kf 0.8 60 600 6<br>[ns] [ns] [V]<br>0.6 I F = 120 A 500 5<br>60 A<br>IRM 50 30 A 400 4<br>0.4<br>300 3<br>0.2 Qrr 40 200 2<br>0 40 80 120 160 0 200 400 600 0 200 400 600<br>TVJ [°C] -diF /dt [A/μs] -diF /dt [A/μs]<br>Fig. 4 Typ. dynamic parameters Fig. 5 Typ. reverse recov. time Fig. 6 Typ. forward recovery voltage<br>Qrr, IRM versus TVJ trr versus -diF /dt VFR & time tfr versus diF /dt<br>16 1.0<br>14 IF = 120 A<br>60 A<br>12 30 A<br>10<br>Erec ZthJC<br>8<br>[K/W]<br>[μJ] 6<br>4<br>TVJ = 125°C<br>2<br>VR = 200 V<br>0.1<br>0 200 400 600 10 [0] 10 [1] 10 [2] 10 [3] 10 [4]<br>-diF /dt [A/μs] t [ms]<br>Fig. 7 Typ. recovery energy Fig. 8 Transient thermal impedance junction to case<br>Erec versus -diF /dt<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131125a © 2013 IXYS all rights reserved
Updated at June 4, 2026
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