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DPG60I400HA
Fast / Ultrafast Diode, Epitaxial Diode (FRED), 400 V, 60 A, Single, 1.22 V, 45 ns, 600 A
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:400V; Forward Current If(AV):60A; Diode Configuration:Single; Forward Voltage VF Max:1.22V; Reverse Recovery Time trr Max:45ns; Forward Surge Current Ifsm Max:60
- SVHC: No SVHC (17-Jan-2023)
- No. of Pins: 2 Pin
- Product Range: DPG60
- Qualification: -
- Diode Case Style: TO-247
- Diode Configuration: Single
- Forward Voltage Max: 1.22V
- Forward Surge Current: 600A
- Reverse Recovery Time: 45ns
- Average Forward Current: 60A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 400V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 4.52 € |
| Current stock | 100+ |
| Lead time | 30 days |
Datasheet
## **DPG60I400HA** ## **HiPerFRED²** VRRM = 400 V I FAV = 60 A[t] rr = 45 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode ## **Part number** DPG60I400HA **==> picture [67 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> Backside: cathode<br>**----- End of picture text -----**<br> **==> picture [115 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> 3 1<br>**----- End of picture text -----**<br> ## **Features / Advantages:** - Planar passivated chips - Very low leakage current - Very short recovery time - Improved thermal behaviour - Very low Irm-values - Very soft recovery behaviour - Avalanche voltage rated for reliable operation - Soft reverse recovery for low EMI/RFI ## **Applications:** - Antiparallel diode for high frequency switching devices - Antisaturation diode - Snubber diode - Free wheeling diode - Rectifiers in switch mode power supplies (SMPS) - Uninterruptible power supplies (UPS) ## **Package:** TO-247 - Industry standard outline - RoHS compliant - Epoxy meets UL 94V-0 - Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131101a © 2013 IXYS all rights reserved **DPG60I400HA** |**Fast Diode**|**Fast Diode**|Ratings<br>typ.<br>max.<br>min.<br>Unit|Ratings<br>typ.<br>max.<br>min.<br>Unit|Ratings<br>typ.<br>max.<br>min.<br>Unit|Ratings<br>typ.<br>max.<br>min.<br>Unit|Ratings<br>typ.<br>max.<br>min.<br>Unit| |---|---|---|---|---|---|---| |Symbol<br>Definition<br>Conditions||||||| |VRSM<br>_max. non-repetitive reverse blocking voltage_||T = 25°C<br>VJ|||400|V| |VRRM<br>_max. repetitive reverse blocking voltage_||T = 25°C<br>VJ|||400|V| |IR<br>_reverse current, drain current_|V = V<br>R<br>V = V<br>R<br>400<br>400|T = 25°C<br>VJ<br>T = °C<br>VJ<br>150|||1<br>0.3|mA<br>µA| |V F<br>_forward voltage drop_|I = A<br>F<br>60<br>I = A<br>F<br>120|T = 25°C<br>VJ|||1.47<br>1.80|V<br>V| ||I = A<br>F<br>60<br>I = A<br>F<br>120|T = °C<br>VJ<br>150|||1.22<br>1.59|V<br>V| |I<br>FAV<br>_average forward current_|T = °C<br>C<br>125<br>d =<br>rectangular<br>0.5|T = °C<br>VJ<br>175|||60|A| |VF0<br>r F<br>_threshold voltage_<br>_slope resistance_<br>_for power loss calculation only_||T = °C<br>VJ<br>175|||0.81<br>6.1|V<br>mΩ| |R<br>_thermal resistance junction to case_<br>thJC|||||0.55|K/W| |R<br>_thermal resistance case to heatsink_<br>thCH||||0.25||K/W| |Ptot<br>_total power dissipation_||T = 25°C<br>C|||275|W| |IFSM<br>t = 10 ms; (50 Hz), sine;<br>_max. forward surge current_<br>V = 0 V<br>R||T = 45°C<br>VJ|||450|A| |CJ<br>_junction capacitance_<br>V = V<br>200<br>f = 1 MHz<br>R||T = 25°C<br>VJ||61||pF| |_reverse recovery time_<br>IRM<br>_max. reverse recovery current_<br>IF =<br>A;<br>60<br>-diF<br>=<br>A/µs<br>200<br>/dt<br>t rr<br>VR =<br>V<br>270||TVJ =<br>°C<br>25<br>T<br>= 125°C<br>VJ||4<br>9.5||A<br>A| |||TVJ =<br>°C<br>25<br>T<br>= 125°C<br>VJ||45<br>85||ns<br>ns| IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131101a © 2013 IXYS all rights reserved **DPG60I400HA** |Ratings<br>**Package**<br>**TO-247**|Ratings<br>**Package**<br>**TO-247**|Ratings<br>**Package**<br>**TO-247**|Ratings<br>**Package**<br>**TO-247**|Ratings<br>**Package**<br>**TO-247**| |---|---|---|---|---| |Symbol<br>Definition<br>Conditions|min.|typ.|max.|Unit| |I RMS<br>_RMS current_<br>per terminal|||70|A| |TVJ<br>_virtual junction temperature_|-55||175|°C| |Top<br>_operation temperature_|-55||150|°C| |Tstg<br>_storage temperature_|-55||150|°C| |Weight||6||g| |M D<br>_mounting torque_<br>FC<br>_mounting force with clip_|0.8||1.2|| ||20|||| **==> picture [192 x 142] intentionally omitted <==** **----- Start of picture text -----**<br> Product Marking<br>Logo IXYS<br>Part No. XXXXXXXXX<br>Assembly Line Zyyww<br>abcd<br>Assembly Code<br>Date Code<br>**----- End of picture text -----**<br> ## Part number - D = Diode - P = HiPerFRED G = extreme fast 60 = Current Rating [A] I = Single Diode - 400 = Reverse Voltage [V] HA = TO-247AD (2) |Ordering||Part Number|Markingon Product|Markingon Product|DeliveryMode|Quantity|Code No.| |---|---|---|---|---|---|---|---| |Standard||DPG60I400HA|DPG60I400HA||Tube|30|506242| ||||||||| |||Similar Part|Package|Voltage class|||| |||DPG60IM400QB|TO-3P(3)|400|||| |**Equivalent Circuits for Simulation**<br>T =<br>VJ<br>175 °C<br>_* on die level_|**Equivalent Circuits for Simulation**<br>T =<br>VJ<br>175 °C<br>_* on die level_| |---|---| |I|V0<br>~~R~~0| IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131101a © 2013 IXYS all rights reserved **DPG60I400HA** ## **Outlines TO-247** |Q|Q|E|E||L<br>2xb<br>D<br>A<br>A2<br>A1<br>C|||||ØP1<br>D2<br>D1<br><br>**4**|ØP1<br>D2<br>D1<br><br>**4**|ØP1<br>D2<br>D1<br><br>**4**|||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |||||||ØP||||ØP1|||**Sym.**|**Inches**<br>**min.**<br>**max.**|**Millimeter**<br>**min.**<br>**max.**| ||||||||||||||||| |||**1**<br>**2**||**3**||S||||**4**|||||| ||||||||||||||A<br>A1<br>A2|0.185<br>0.209<br>0.087<br>0.102<br>0.059<br>0.098|4.70<br>5.30<br>2.21<br>2.59<br>1.50<br>2.49| ||||||||||||||||| ||||||||||||||D<br>E<br>E2<br>e|0.819<br>0.845<br>0.610<br>0.640<br>0.170<br>0.216<br>0.430 BSC|20.79<br>21.45<br>15.48<br>16.24<br>4.31<br>5.48<br>10.92 BSC| ||||||||||||||L<br>L1<br>Ø P<br>Q<br>S|0.780<br>0.800<br>-<br>0.177<br>0.140<br>0.144<br>0.212<br>0.244<br>0.242 BSC|19.80<br>20.30<br>-<br>4.49<br>3.55<br>3.65<br>5.38<br>6.19<br>6.14 BSC| ||||||||||||||||| ||||||||||||||||| ||||||||||||||||| ||||||||||||||||| ||||||||||||||b<br>b2<br>b4<br>c|0.039<br>0.055<br>0.065<br>0.094<br>0.102<br>0.135<br>0.015<br>0.035|0.99<br>1.40<br>1.65<br>2.39<br>2.59<br>3.43<br>0.38<br>0.89| ||||||||||||||D1<br>D2<br>E1<br>Ø P1|0.515<br>-<br>0.020<br>0.053<br>0.530<br>-<br>-<br>0.29|13.07<br>-<br>0.51<br>1.35<br>13.45<br>-<br>-<br>7.39| ||||||||||||||||| **==> picture [483 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> 3 1<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131101a © 2013 IXYS all rights reserved **DPG60I400HA** ## **Fast Diode** **==> picture [508 x 660] intentionally omitted <==** **----- Start of picture text -----**<br> 120 1.0 22<br>TVJ = 125°C 120 A 20<br>100 VR = 270 V 60 A IF = 120 A<br>18 60 A<br>0.8<br>30 A 30 A<br>80 16<br>IF Qrr IRM 14<br>60 0.6<br>[μC] 12<br>[A] 40 TVJ = 150°C [A] 10<br>0.4 TVJ = 125°C<br>8<br>25°C VR = 270 V<br>20<br>6<br>0.2 4<br>0.0 0.4 0.8 1.2 1.6 2.0 0 200 400 600 0 200 400 600<br>VF [V] -diF /dt [A/μs] -diF /dt [A/μs]<br>Fig. 1 Forward current Fig. 2 Typ. reverse recov. charge Fig. 3 Typ. reverse recov. current<br>IF versus VF Qrr versus -diF /dt IRM versus -diF /dt<br>1.4 110 1200 12<br>1.2 TVVJR = 125°C= 270 V 1100 tfr VT VJ R = 270 V= 125°C VFR 11<br>100 1000 10<br>IF = 60 A<br>900 9<br>1.0<br>90 800 8<br>trr tfr VFR<br>Kf 0.8 700 7<br>[ns] 80 [ns] 600 6 [V]<br>0.6<br>500 5<br>IRM 70 120 A 400 4<br>0.4<br>60 A<br>300 3<br>Qrr 30 A<br>0.2 60 200 2<br>0 40 80 120 160 0 200 400 600 0 200 400 600<br>TVJ [°C] -diF /dt [A/μs] -diF /dt [A/μs]<br>Fig. 4 Typ. dynamic parameters Fig. 5 Typ. reverse recov. time Fig. 6 Typ. forward recovery voltage<br>Qrr, IRM versus TVJ trr versus -diF /dt VFR & time tfr versus diF /dt<br>40 1.0<br>TVJ = 125°C 120 A<br>VR = 270 V<br>60 A<br>30<br>30 A<br>Erec ZthJC<br>20<br>[K/W]<br>[μJ]<br>10<br>0 0.1<br>0 200 400 600 10 [0] 10 [1] 10 [2] 10 [3] 10 [4]<br>-diF /dt [A/μs] t [ms]<br>Fig. 7 Typ. recovery energy Fig. 8 Transient thermal impedance junction to case<br>Erec versus -diF /dt<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131101a © 2013 IXYS all rights reserved
Updated at June 4, 2026
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