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DPG60C400QB
Fast / Ultrafast Diode, Epitaxial Diode (FRED), 400 V, 30 A, Dual Common Cathode, 1.13 V, 45 ns
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:400V; Forward Current If(AV):30A; Diode Configuration:Dual Common Cathode; Forward Voltage VF Max:1.13V; Reverse Recovery Time trr Max:45ns; Forward Surge Current I
- SVHC: No SVHC (17-Jan-2023)
- No. of Pins: 3 Pin
- Product Range: DPG60
- Qualification: -
- Diode Case Style: TO-3P
- Diode Configuration: Dual Common Cathode
- Forward Voltage Max: 1.13V
- Forward Surge Current: 300A
- Reverse Recovery Time: 45ns
- Average Forward Current: 30A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 400V
| Delivery and price | |
|---|---|
| Units per pack | 30 |
| Price | 3.09 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **DPG60C400QB** ## **HiPerFRED²** |RRM<br>V|=||400|V| |---|---|---|---|---| |FAV<br>I|=|2x|30|A| |rrt|=||45|ns| High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode ## **Part number** DPG60C400QB Backside: cathode **==> picture [116 x 12] intentionally omitted <==** **----- Start of picture text -----**<br> 1 2 3<br>**----- End of picture text -----**<br> ## **Features / Advantages:** - Planar passivated chips - Very low leakage current - Very short recovery time - Improved thermal behaviour - Very low Irm-values - Very soft recovery behaviour - Avalanche voltage rated for reliable operation - Soft reverse recovery for low EMI/RFI ## **Applications:** - Antiparallel diode for high frequency switching devices - Antisaturation diode - Snubber diode - Free wheeling diode - Rectifiers in switch mode power supplies (SMPS) - Uninterruptible power supplies (UPS) ## **Package:** TO-3P - Industry standard outline compatible with TO-247 - RoHS compliant - Epoxy meets UL 94V-0 - Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131101a © 2013 IXYS all rights reserved **DPG60C400QB** |**Fast Diode**|**Fast Diode**|Ratings<br>typ.<br>max.<br>min.<br>Unit|Ratings<br>typ.<br>max.<br>min.<br>Unit|Ratings<br>typ.<br>max.<br>min.<br>Unit|Ratings<br>typ.<br>max.<br>min.<br>Unit|Ratings<br>typ.<br>max.<br>min.<br>Unit| |---|---|---|---|---|---|---| |Symbol<br>Definition<br>Conditions||||||| |VRSM<br>_max. non-repetitive reverse blocking voltage_||T = 25°C<br>VJ|||400|V| |VRRM<br>_max. repetitive reverse blocking voltage_||T = 25°C<br>VJ|||400|V| |IR<br>_reverse current, drain current_|V = V<br>R<br>V = V<br>R<br>400<br>400|T = 25°C<br>VJ<br>T = °C<br>VJ<br>150|||1<br>0.2|mA<br>µA| |V F<br>_forward voltage drop_|I = A<br>F<br>30<br>I = A<br>F<br>60|T = 25°C<br>VJ|||1.41<br>1.69|V<br>V| ||I = A<br>F<br>30<br>I = A<br>F<br>60|T = °C<br>VJ<br>150|||1.13<br>1.46|V<br>V| |I<br>FAV<br>_average forward current_|T = °C<br>C<br>135<br>d =<br>rectangular<br>0.5|T = °C<br>VJ<br>175|||30|A| |VF0<br>r F<br>_threshold voltage_<br>_slope resistance_<br>_for power loss calculation only_||T = °C<br>VJ<br>175|||0.76<br>10.7|V<br>mΩ| |R<br>_thermal resistance junction to case_<br>thJC|||||0.95|K/W| |R<br>_thermal resistance case to heatsink_<br>thCH||||0.25||K/W| |Ptot<br>_total power dissipation_||T = 25°C<br>C|||160|W| |IFSM<br>t = 10 ms; (50 Hz), sine;<br>_max. forward surge current_<br>V = 0 V<br>R||T = 45°C<br>VJ|||360|A| |CJ<br>_junction capacitance_<br>V = V<br>200<br>f = 1 MHz<br>R||T = 25°C<br>VJ||39||pF| |_reverse recovery time_<br>IRM<br>_max. reverse recovery current_<br>IF =<br>A;<br>30<br>-diF<br>=<br>A/µs<br>200<br>/dt<br>t rr<br>VR =<br>V<br>270||TVJ =<br>°C<br>25<br>T<br>= 125°C<br>VJ||4<br>8.5||A<br>A| |||TVJ =<br>°C<br>25<br>T<br>= 125°C<br>VJ||45<br>85||ns<br>ns| IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131101a © 2013 IXYS all rights reserved **DPG60C400QB** |Ratings<br>**Package**<br>**TO-3P**|Ratings<br>**Package**<br>**TO-3P**|Ratings<br>**Package**<br>**TO-3P**|Ratings<br>**Package**<br>**TO-3P**|Ratings<br>**Package**<br>**TO-3P**| |---|---|---|---|---| |Symbol<br>Definition<br>Conditions|min.|typ.|max.|Unit| |I RMS<br>_RMS current_<br>per terminal<br>1)|||50|A| |TVJ<br>_virtual junction temperature_|-55||175|°C| |Top<br>_operation temperature_|-55||150|°C| |Tstg<br>_storage temperature_|-55||150|°C| |Weight||5||g| |M D<br>_mounting torque_<br>FC<br>_mounting force with clip_|0.8||1.2|| ||20|||| **==> picture [192 x 142] intentionally omitted <==** **----- Start of picture text -----**<br> Product Marking<br>Logo IXYS<br>Part No.<br>Assembly Line Zyyww<br>Assembly Code abcd<br>Date Code<br>**----- End of picture text -----**<br> ## Part number - D = Diode P = HiPerFRED G = extreme fast 60 = Current Rating [A] C = Common Cathode - 400 = Reverse Voltage [V] QB = TO-3P (3) |Ordering|Part Number|Markingon Product|Markingon Product|DeliveryMode|Quantity|Code No.| |---|---|---|---|---|---|---| |Standard|DPG60C400QB|DPG60C400QB||Tube|30|501908| ||DPG80C400HB<br>Similar Part<br>DPG60C400HB|||||| |||Package|Voltage class|||| |||TO-247AD(3)|400|||| |||TO-247AD(3)|400|||| **Equivalent Circuits for Simulation** _* on die level_ T =VJ 175 °C I V0 ~~R~~ 0 Fast Diode V 0 max _threshold voltage_ 0.76 V R0 max _slope resistance *_ 8.1 mΩ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131101a © 2013 IXYS all rights reserved **DPG60C400QB** **==> picture [83 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> Outlines TO-3P<br>**----- End of picture text -----**<br> **==> picture [130 x 12] intentionally omitted <==** **----- Start of picture text -----**<br> 1 2 3<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131101a © 2013 IXYS all rights reserved **DPG60C400QB** ## **Fast Diode** **==> picture [508 x 660] intentionally omitted <==** **----- Start of picture text -----**<br> 80 1.0<br>TVJ = 125°C 60 A 20 TVJ = 125°C 60 A<br>70 VR = 270 V VR = 270 V 30 A<br>60 0.8<br>30 A 16 15 A<br>50<br>IF 40 TVJ = 150°C Qrr 0.6 IRR<br>15 A 12<br>[μC]<br>[A] 30 [A]<br>20 0.4 8<br>25°C<br>10<br>0.2 4<br>0.0 0.4 0.8 1.2 1.6 2.0 0 200 400 600 0 200 400 600<br>VF [V] -diF [/dt] [[A/μs]] -diF /dt [A/μs]<br>Fig. 1 Forward current Fig. 2 Typ. reverse recov. charge Fig. 3 Typ. reverse recovery current<br>IF versus VF Qrr versus -diF /dt IRR versus -diF /dt<br>1.6 140 700 16<br>1.4 TVVJR = 125°C= 270 V 600 tfr T V VJ R = 270 V = 125°C VFR 14<br>1.2 120 IF = 30 A<br>500 12<br>1.0<br>100<br>trr tfr 400 10<br>Kf 0.8 VFR<br>[ns] 80 [ns] 300 8<br>0.6<br>IRR [V]<br>15 A 200 6<br>0.4<br>60 30 A<br>0.2 Qrr 60 A 100 4<br>0.0 40 0 2<br>0 40 80 120 160 0 200 400 600 0 200 400 600<br>TVJ [°C] -diF /dt [A/μs] -diF /dt [A/μs]<br>Fig. 4 Typ. dynamic parameters Fig. 5 Typ. reverse recov. time Fig. 6 Typ. forward recov. voltage<br>Qrr, IRR versus TVJ trr versus -diF /dt VFR & time tfr versus diF /dt<br>50 1.0<br>TVJ = 125°C 60 A<br>VR = 270 V<br>40 0.8<br>30 A<br>30 15 A ZthJC 0.6<br>Erec<br>20 [K/W] 0.4<br>[μJ]<br>10 0.2<br>0 0.0<br>0 200 400 600 1 10 100 1000 10000<br>-diF /dt [A/μs] t [ms]<br>Fig. 7 Typ. recovery energy Fig. 8 Transient thermal impedance junction to case<br>Erec versus -diF /dt<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131101a © 2013 IXYS all rights reserved
Updated at June 4, 2026
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