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DPG60C300PC-TRL
Fast / Ultrafast Diode, 300 V, 30 A, Dual Common Cathode, 1.66 V, 35 ns, 360 A
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- Manufacturer: LITTELFUSE
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- SVHC: To Be Advised
- No. of Pins: 3 Pin
- Product Range: -
- Qualification: -
- Diode Case Style: TO-263 (D2PAK)
- Diode Configuration: Dual Common Cathode
- Forward Voltage Max: 1.66V
- Forward Surge Current: 360A
- Reverse Recovery Time: 35ns
- Average Forward Current: 30A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 300V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 3.61 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **DPG60C300PC** ## **HiPerFRED** **VRRM** _**=**_ **300 V I FAV** _**=**_ **2x 30 A t rr** _**=**_ **35 ns** ## High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode ## **Part number** ## **DPG60C300PC** _Marking on Product: DPG60C300PC_ Backside: cathode **==> picture [116 x 12] intentionally omitted <==** **----- Start of picture text -----**<br> 1 4 3<br>**----- End of picture text -----**<br> ## **Features / Advantages:** - Planar passivated chips - Very low leakage current - Very short recovery time - Improved thermal behaviour - Very low Irm-values - Very soft recovery behaviour - Avalanche voltage rated for reliable operation - Soft reverse recovery for low EMI/RFI ## **Applications:** - Antiparallel diode for high frequency switching devices - Antisaturation diode - Snubber diode - Free wheeling diode - Rectifiers in switch mode power supplies (SMPS) - Uninterruptible power supplies (UPS) ## **Package:** TO-263 (D2Pak) - Industry standard outline - RoHS compliant - Epoxy meets UL 94V-0 - Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ## **Disclaimer Notice** Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20190212c © 2019 IXYS all rights reserved ## **DPG60C300PC** |**Fast Diode**|**Fast Diode**|**Ratings**<br>**typ.**<br>**max.**<br>**min.**<br>**Unit**|**Ratings**<br>**typ.**<br>**max.**<br>**min.**<br>**Unit**|**Ratings**<br>**typ.**<br>**max.**<br>**min.**<br>**Unit**|**Ratings**<br>**typ.**<br>**max.**<br>**min.**<br>**Unit**|**Ratings**<br>**typ.**<br>**max.**<br>**min.**<br>**Unit**| |---|---|---|---|---|---|---| |**Symbol**<br>**Definition**<br>**Conditions**||||||| |**VRSM**<br>_max. non-repetitive reverse blocking voltage_||T = 25°C<br>VJ|||300|V| |**VRRM**<br>_max. repetitive reverse blocking voltage_||T = 25°C<br>VJ|||300|V| |**I R**<br>_reverse current, drain current_|V = V<br>R<br>V = V<br>R<br>300<br>300|T = 25°C<br>VJ<br>T = °C<br>VJ<br>150|||1<br>0.1|mA<br>µA| |**VF**<br>_forward voltage drop_|I = A<br>F<br>30<br>I = A<br>F<br>60|T = 25°C<br>VJ|||1.35<br>1.66|V<br>V| ||I = A<br>F<br>30<br>I = A<br>F<br>60|T = °C<br>VJ<br>150|||1.08<br>1.43|V<br>V| |**I**<br>**FAV**<br>_average forward current_|T = °C<br>C<br>140<br>d =<br>rectangular<br>0.5|T = °C<br>VJ<br>175|||30|A| |**VF0**<br>**rF**<br>_threshold voltage_<br>_slope resistance_<br>_for power loss calculation only_||T = °C<br>VJ<br>175|||0.70<br>11.1|V<br>mΩ| |**R**<br>_thermal resistance junction to case_<br>**thJC**|||||0.85|K/W| |**R**<br>_thermal resistance case to heatsink_<br>**thCH**||||0.25||K/W| |**Ptot**<br>_total power dissipation_||T = 25°C<br>C|||175|W| |**IFSM**<br>t = 10 ms; (50 Hz), sine;<br>_max. forward surge current_<br>V = 0 V<br>R||T = 45°C<br>VJ|||360|A| |**CJ**<br>_junction capacitance_<br>V = V<br>150<br>f = 1 MHz<br>R||T = 25°C<br>VJ||42||pF| |_reverse recovery time_<br>**IRM**<br>_max. reverse recovery current_<br>IF =<br>A;<br>30<br>-diF<br>=<br>A/µs<br>200<br>/dt<br>**trr**<br>VR =<br>V<br>200||TVJ =<br>°C<br>25<br>T<br>=<br>125°C<br>VJ||3<br>7||A<br>A| |||TVJ =<br>°C<br>25<br>T<br>=<br>125°C<br>VJ||35<br>55||ns<br>ns| IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20190212c © 2019 IXYS all rights reserved **DPG60C300PC** |**Ratings**<br>**Package**<br>**TO-263 (D2Pak)**|**Ratings**<br>**Package**<br>**TO-263 (D2Pak)**|**Ratings**<br>**Package**<br>**TO-263 (D2Pak)**|**Ratings**<br>**Package**<br>**TO-263 (D2Pak)**|**Ratings**<br>**Package**<br>**TO-263 (D2Pak)**| |---|---|---|---|---| |**Symbol**<br>**Definition**<br>**Conditions**|**min.**|**typ.**|**max.**|**Unit**| |**I RMS**<br>_RMS current_<br>per terminal|||35|A| |**TVJ**<br>_virtual junction temperature_|-55||175|°C| |**Top**<br>_operation temperature_|-55||150|°C| |**Tstg**<br>_storage temperature_|-55||150|°C| |**Weight**||2||g| |**FC**<br>_mounting force with clip_|20||N<br>60|| ## Product Marking **==> picture [135 x 120] intentionally omitted <==** **----- Start of picture text -----**<br> Part No. XXXXXXXXX<br>Logo IXYS Zyyww<br>Assembly Line<br>Date Code 000000<br>Assembly Code<br>**----- End of picture text -----**<br> ## **Part description** - D = Diode P = HiPerFRED G = extreme fast - 60 = Current Rating [A] C = Common Cathode - 300 = Reverse Voltage [V] PC = TO-263AB (D2Pak) (2) |**Ordering**|**Ordering Number**<br>|**Ordering Number**<br>|**Marking on Product**|**Marking on Product**|**Delivery Mode**|**Quantity**|**Code No.**| |---|---|---|---|---|---|---|---| |Standard|DPG60C300PC-TRL<br>||DPG60C300PC||Tape & Reel|800|503494| |Alternativ|DPG60C300PC-TUB<br>e||DPG60C300PC||Tube|50|524929| ||||||||| |||**Similar Part**|**Package**|**Voltage class**|||| |||DPG60C300HB|TO-247AD(3)|300|||| |||DPG60C300QB|TO-3P(3)|300|||| |||DPG60C300HJ|ISOPLUS247(3)|300|||| |||DPF60C300HB|TO-247AD(3)|300|||| |||DPG80C300HB|TO-247AD(3)|300|||| |**Equivalent Circuits for Simulation**<br>T =<br>VJ<br>175 °C<br>_* on die level_|**Equivalent Circuits for Simulation**<br>T =<br>VJ<br>175 °C<br>_* on die level_| |---|---| |I|V0<br>~~R~~0| IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20190212c © 2019 IXYS all rights reserved **DPG60C300PC** **==> picture [509 x 15] intentionally omitted <==** **----- Start of picture text -----**<br> Outlines TO-263 (D2Pak)<br>**----- End of picture text -----**<br> **==> picture [511 x 485] intentionally omitted <==** **----- Start of picture text -----**<br> Millimeter Inches<br>Dim.<br>min max min max<br>A 4.06 4.83 0.160 0.190<br>W A1 typ. 0.10 typ. 0.004<br>A A2 2.41 0.095<br>c2 Supplier� b 0.51 0.99 0.020 0.039<br>Option<br>E b2 1.14 1.40 0.045 0.055<br>c 0.40 0.74 0.016 0.029<br>c2 1.14 1.40 0.045 0.055<br>A1 D 8.38 9.40 0.330 0.370<br>D1 8.00 8.89 0.315 0.350<br>4 D2 2.5 0.098<br>1 2 3<br>E 9.65 10.41 0.380 0.410<br>E1 6.22 8.50 0.245 0.335<br>e 2,54 BSC 0,100 BSC<br>c e1 4.28 0.169<br>2x e 3x b2 2x b H 14.61 15.88 0.575 0.625<br>10.92 L 1.78 2.79 0.070 0.110<br>(0.430) mm (Inches) E1 L1 1.02 1.68 0.040 0.066<br>typ. typ.<br>W 0.040 0.002<br>0.02 0.0008<br>All dimensions conform with<br>and/or within JEDEC standard.<br>1.78<br>(0.07)<br>2.54 (0.100) Recommended min. foot print<br>L1<br>D1<br>D<br>H<br>L L2<br>9.02<br>(0.355)<br>3.81<br>(0.150)<br>3.05<br>(0.120)<br>**----- End of picture text -----**<br> **==> picture [509 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> 1 4 3<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20190212c © 2019 IXYS all rights reserved **DPG60C300PC** ## **Fast Diode** **==> picture [508 x 660] intentionally omitted <==** **----- Start of picture text -----**<br> 80 16<br>70 0.4 I F = 60 A30 A 14 I F = 60 A<br>30 A<br>60 15 A 12 15 A<br>0.3<br>50 10<br>IF 40 TVJ = 150°C Qrr IRM 8<br>0.2<br>[A] 30 [μC] [A] 6<br>20 0.1 4<br>10 25°C TVVJR = 200 V = 125°C 2 TVVJR = 200 V = 125°C<br>0.0 0.4 0.8 1.2 1.6 2.0 0 200 400 600 0 200 400 600<br>VF [V] -diF /dt [A/μs] -diF /dt [A/μs]<br>Fig. 1 Forward current Fig. 2 Typ. reverse recov. charge Fig. 3 Typ. reverse recov. current<br>IF versus VF Qrr versus -diF /dt IRM versus -diF /dt<br>1.4 70 600 12<br>1.2 TVVJR = 200 V = 125°C 500 tfr VFR 10<br>60<br>1.0 400 8<br>50<br>trr tfr VFR<br>Kf 0.8 [ns] 40 IF = 60 A 30 A [ns]300 6 [V]<br>0.6 15 A 200 4<br>IRM<br>30 TVJ = 125°C<br>0.4 100 VR = 200 V 2<br>0.2 Qrr 20 0 IF = 30 A 0<br>0 40 80 120 160 0 200 400 600 0 200 400 600<br>TVJ °[C] -diF [/dt] [[A/μs]] -diF /dt [A/μs]<br>Fig. 4 Typ. dynamic parameters Fig. 5 Typ. reverse recov. time Fig. 6 Typ. forward recov. voltage<br>Qrr, IRM versus TVJ trr versus -diF /dt VFR & tfr versus diF /dt<br>16 1<br>14 TVJ = 125°C<br>VR = 200 V<br>12<br>Erec10 I F = 15 A30 A ZthJC<br>8 60 A<br>[μJ] 6 [K/W]<br>4 Rthi [K/W] ti [s]<br>0.139 0.00028<br>0.176 0.0033<br>2<br>0.305 0.028<br>0.23 0.17<br>0.1<br>0 200 400 600 0.001 0.01 0.1 1 10<br>-diF /dt [A/μs] t [s]<br>Fig. 7 Typ. recovery energy Fig. 8 Transient thermal impedance junction to case<br>Erec versus -diF /dt<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20190212c © 2019 IXYS all rights reserved
Updated at June 4, 2026
Founded in 1927 and headquartered in Chicago, Illinois, Littelfuse is a premier global manufacturer of circuit protection, power control, and sensing technologies. Widely recognized for pioneering the first small, fast-acting protective fuse, the company has grown into an industry leader whose highly reliable components are essential to modern industrial, transportation, and consumer electronics applications worldwide. At the core of the Littelfuse portfolio is an expansive and industry-leading range of circuit protection solutions. This encompasses a massive selection of traditional fuses, fuse holders, and resettable PTC thermistor fuses designed to safely interrupt overcurrent conditions. To defend against electrical overstress, Littelfuse also provides advanced transient voltage suppression (TVS) technologies, including thousands of specialized TVS diodes, TVS varistors, and gas discharge tubes (GDTs) that ensure robust defense against voltage spikes and environmental hazards. Beyond its foundational protection components, Littelfuse manufactures a diverse array of discrete semiconductors, sensors, and switching devices. Engineers rely on their high-performance thyristors, including TRIACs and SCRs, alongside power-efficient Schottky diodes and MOSFETs for demanding power control applications. Complemented by precision proximity sensors and highly reliable reed and solid-state relays, Littelfuse delivers the critical building blocks required for secure, efficient, and complete system design.
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