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DPG30C200PB
Fast / Ultrafast Diode, Epitaxial Diode (FRED), 200 V, 15 A, Dual Common Cathode, 1 V, 35 ns, 150 A
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:200V; Forward Current If(AV):15A; Diode Configuration:Dual Common Cathode; Forward Voltage VF Max:1V; Reverse Recovery Time trr Max:35ns; Forward Surge Current I
- SVHC: No SVHC (17-Jan-2023)
- No. of Pins: 3 Pin
- Product Range: DPG30
- Qualification: -
- Diode Case Style: TO-220AB
- Diode Configuration: Dual Common Cathode
- Forward Voltage Max: 1V
- Forward Surge Current: 150A
- Reverse Recovery Time: 35ns
- Average Forward Current: 15A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 200V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 1.55 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
**DPG30C200PB** ## **HiPerFRED²** VRRM = 200 V I FAV = 2x 15 A[t] rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode ## **Part number** DPG30C200PB Backside: cathode **==> picture [116 x 12] intentionally omitted <==** **----- Start of picture text -----**<br> 1 2 3<br>**----- End of picture text -----**<br> ## **Features / Advantages:** - Planar passivated chips - Very low leakage current - Very short recovery time - Improved thermal behaviour - Very low Irm-values - Very soft recovery behaviour - Avalanche voltage rated for reliable operation - Soft reverse recovery for low EMI/RFI ## **Applications:** - Antiparallel diode for high frequency switching devices - Antisaturation diode - Snubber diode - Free wheeling diode - Rectifiers in switch mode power supplies (SMPS) - Uninterruptible power supplies (UPS) ## **Package:** TO-220 - Industry standard outline - RoHS compliant - Epoxy meets UL 94V-0 - Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131126a © 2013 IXYS all rights reserved **DPG30C200PB** |**Fast Diode**|**Fast Diode**|Ratings<br>typ.<br>max.<br>min.<br>Unit|Ratings<br>typ.<br>max.<br>min.<br>Unit|Ratings<br>typ.<br>max.<br>min.<br>Unit|Ratings<br>typ.<br>max.<br>min.<br>Unit|Ratings<br>typ.<br>max.<br>min.<br>Unit| |---|---|---|---|---|---|---| |Symbol<br>Definition<br>Conditions||||||| |VRSM<br>_max. non-repetitive reverse blocking voltage_||T = 25°C<br>VJ|||200|V| |VRRM<br>_max. repetitive reverse blocking voltage_||T = 25°C<br>VJ|||200|V| |IR<br>_reverse current, drain current_|V = V<br>R<br>V = V<br>R<br>200<br>200|T = 25°C<br>VJ<br>T = °C<br>VJ<br>150|||1<br>0.08|mA<br>µA| |V F<br>_forward voltage drop_|I = A<br>F<br>15<br>I = A<br>F<br>30|T = 25°C<br>VJ|||1.26<br>1.51|V<br>V| ||I = A<br>F<br>15<br>I = A<br>F<br>30|T = °C<br>VJ<br>150|||1.01<br>1.29|V<br>V| |I<br>FAV<br>_average forward current_|T = °C<br>C<br>145<br>d =<br>rectangular<br>0.5|T = °C<br>VJ<br>175|||15|A| |VF0<br>r F<br>_threshold voltage_<br>_slope resistance_<br>_for power loss calculation only_||T = °C<br>VJ<br>175|||0.69<br>18|V<br>mΩ| |R<br>_thermal resistance junction to case_<br>thJC|||||1.7|K/W| |R<br>_thermal resistance case to heatsink_<br>thCH||||0.50||K/W| |Ptot<br>_total power dissipation_||T = 25°C<br>C|||90|W| |IFSM<br>t = 10 ms; (50 Hz), sine;<br>_max. forward surge current_<br>V = 0 V<br>R||T = 45°C<br>VJ|||240|A| |CJ<br>_junction capacitance_<br>V = V<br>150<br>f = 1 MHz<br>R||T = 25°C<br>VJ||20||pF| |_reverse recovery time_<br>IRM<br>_max. reverse recovery current_<br>IF =<br>A;<br>15<br>-diF<br>=<br>A/µs<br>200<br>/dt<br>t rr<br>VR =<br>V<br>130||TVJ =<br>°C<br>25<br>T<br>= 125°C<br>VJ||3<br>6.5||A<br>A| |||TVJ =<br>°C<br>25<br>T<br>= 125°C<br>VJ||35<br>55||ns<br>ns| IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131126a © 2013 IXYS all rights reserved **DPG30C200PB** |Ratings<br>**Package**<br>**TO-220**|Ratings<br>**Package**<br>**TO-220**|Ratings<br>**Package**<br>**TO-220**|Ratings<br>**Package**<br>**TO-220**|Ratings<br>**Package**<br>**TO-220**| |---|---|---|---|---| |Symbol<br>Definition<br>Conditions|min.|typ.|max.|Unit| |I RMS<br>_RMS current_<br>per terminal<br>1)|||35|A| |TVJ<br>_virtual junction temperature_|-55||175|°C| |Top<br>_operation temperature_|-55||150|°C| |Tstg<br>_storage temperature_|-55||150|°C| |Weight||2||g| |M D<br>_mounting torque_<br>FC<br>_mounting force with clip_|0.4||0.6|| ||20|||| **==> picture [192 x 142] intentionally omitted <==** **----- Start of picture text -----**<br> Product Marking<br>Part Number XXXXXX<br>Logo Zyyww<br>Assembly Line<br>Lot # abcdef<br>Date Code<br>**----- End of picture text -----**<br> ## Part number - D = Diode P = HiPerFRED G = extreme fast 30 = Current Rating [A] C = Common Cathode - 200 = Reverse Voltage [V] PB = TO-220AB (3) |Ordering||Part Number|Markingon Product|Markingon Product|DeliveryMode|Quantity|Code No.| |---|---|---|---|---|---|---|---| |Standard||DPG30C200PB|DPG30C200PB||Tube|50|505804| ||||||||| |||Similar Part|Package|Voltage class|||| |||DPG30C200PC|TO-263AB(D2Pak) (2)|200|||| |||DPG30C200HB|TO-247AD(3)|200|||| **Equivalent Circuits for Simulation** _* on die level_ T =VJ 175 °C I V0 ~~R~~ 0 Fast Diode V 0 max _threshold voltage_ 0.69 V R0 max _slope resistance *_ 14.7 mΩ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131126a © 2013 IXYS all rights reserved **DPG30C200PB** ## **Outlines TO-220** ||||||||||||||||||||||||Dim.|Millimeter|Millimeter|Inches|Inches|| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| ||||||||||||||||||||A|||||Min.|Max.|Min.|Max.|| |||||||||||||||||||||||||||||| ||||||E|||||||||Q||||A1|||||A<br>A1|4.32<br>1.14|4.82<br>1.39|0.170<br>0.045|0.190<br>0.055|| ||||||||||||||||||||||||A2|2.29|2.79|0.090|0.110|| |ØP||||||||||||4||||H1|||||||b<br>b2|0.64<br>1.15|1.01<br>1.65|0.025<br>0.045|0.040<br>0.065|| ||||||||||||||||D||||||||C|0.35|0.56|0.014|0.022|| ||||||||||||||||||||||||D|14.73|16.00|0.580|0.630|| |||1||||2|||3||||||||||||||E|9.91|10.66|0.390|0.420|| |3x b2|||||||||||||L1||||||||||e<br>H1|2.54<br>5.85|BSC<br>6.85|0.100<br>0.230|BSC<br>0.270|| ||||||||||||||||L||||||||L|12.70|13.97|0.500|0.550|| ||||||||||||||||||||||||L1|2.79|5.84|0.110|0.230|| ||||||||||||||||||||||||ØP|3.54|4.08|0.139|0.161|| |3x b||||||||||||2x e|||||C<br>A2||||||Q|2.54|3.18|0.100|0.125|| |||||||||||||||||||||||||||||| **==> picture [483 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> 1 2 3<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131126a © 2013 IXYS all rights reserved **DPG30C200PB** ## **Fast Diode** **==> picture [508 x 660] intentionally omitted <==** **----- Start of picture text -----**<br> 80 0.5 16<br>TVJ = 125°C<br>70 0.4 VR = 130 V 30 A 14 II F F = 15 A= 30 A<br>60 12 I F = 7.5 A<br>IF 50 TVJ = 150°C 25°C Qrr 0.3 15 A IRM 10<br>40 [μC] 7.5 A 8<br>[A] 0.2 [A]<br>30 6<br>20 4<br>0.1<br>10 2 TVJ = 125°C<br>VR = 130 V<br>0 0.0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 0 100 200 300 400 500 600 0 100 200 300 400 500 600<br>VF [V] -diF /dt [A/μs] -diF /dt [A/μs]<br>Fig. 1 Forward current Fig. 2 Typ. reverse recov. charge Fig. 3 Typ. peak reverse current<br>IF versus VF Qrr versus -diF /dt IRM versus -diF /dt<br>1.4 70 16 400<br>TVJ = 125°C<br>1.2 60 VR = 130 V 14 TVJ = 125°C<br>1.0 12 I F = 15 A 300<br>IF = 30 A 10 VR = 130 V<br>Kf 0.8 trr 50 VFR 8 200tfr<br>0.6 [ns]<br>IRM [ns] 40 [V] 6<br>15 A<br>0.4<br>7.5 A 4 100<br>0.2 Qrr 30 2 VFR tfr<br>0.0 20 0 0<br>0 20 40 60 80 100 120 140 160 0 100 200 300 400 500 600 0 100 200 300 400 500 600<br>TVJ [°C] -diF /dt [A/μs] -diF /dt [A/μs]<br>Fig. 4 Typ. dynamic parameters Fig. 5 Typ. recovery time Fig. 6 Typ. peak forward voltage<br>Qrr, IRM versus TVJ trr versus -diF /dt VFR and tfr versus diF /dt<br>16 1.8<br>14<br>1.6<br>12<br>IF = 30 A 1.4<br>Erec10 I IFF = 15 A = 7.5 A ZthJC1.2<br>8<br>[K/W]<br>[μJ]<br>6 1.0<br>4 0.8<br>2 TVJ = 125°C<br>VR = 130 V 0.6<br>0<br>0 100 200 300 400 500 600 1 10 100 1000 10000<br>-diF /dt [A/μs] t [ms]<br>Fig. 7 Typ. recovery energy Fig. 8 Transient thermal resistance junction to case<br>Erec versus -diF /dt<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131126a © 2013 IXYS all rights reserved
Updated at June 4, 2026
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