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DPG20C400PB
Fast / Ultrafast Diode, 400 V, 10 A, Dual Common Cathode, 1.4 V, 45 ns, 100 A
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:400V; Forward Current If(AV):10A; Diode Configuration:Dual Common Cathode; Forward Voltage VF Max:1.4V; Reverse Recovery Time trr Max:45ns; Forward Surge Cu
- SVHC: No SVHC (17-Jan-2023)
- No. of Pins: 3 Pin
- Product Range: DPG20
- Qualification: -
- Diode Case Style: TO-220AB
- Diode Configuration: Dual Common Cathode
- Forward Voltage Max: 1.4V
- Forward Surge Current: 100A
- Reverse Recovery Time: 45ns
- Average Forward Current: 10A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 400V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.56 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **DPG20C400PB** ## **HiPerFRED²** VRRM = 400 V I FAV = 2x 10 A[t] rr = 45 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode ## **Part number** DPG20C400PB Backside: cathode **==> picture [116 x 12] intentionally omitted <==** **----- Start of picture text -----**<br> 1 2 3<br>**----- End of picture text -----**<br> ## **Features / Advantages:** - Planar passivated chips - Very low leakage current - Very short recovery time - Improved thermal behaviour - Very low Irm-values - Very soft recovery behaviour - Avalanche voltage rated for reliable operation - Soft reverse recovery for low EMI/RFI ## **Applications:** - Antiparallel diode for high frequency switching devices - Antisaturation diode - Snubber diode - Free wheeling diode - Rectifiers in switch mode power supplies (SMPS) - Uninterruptible power supplies (UPS) ## **Package:** TO-220 - Industry standard outline - RoHS compliant - Epoxy meets UL 94V-0 - Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131101a © 2013 IXYS all rights reserved **DPG20C400PB** |**Fast Diode**|**Fast Diode**|Ratings<br>typ.<br>max.<br>min.<br>Unit|Ratings<br>typ.<br>max.<br>min.<br>Unit|Ratings<br>typ.<br>max.<br>min.<br>Unit|Ratings<br>typ.<br>max.<br>min.<br>Unit|Ratings<br>typ.<br>max.<br>min.<br>Unit| |---|---|---|---|---|---|---| |Symbol<br>Definition<br>Conditions||||||| |VRSM<br>_max. non-repetitive reverse blocking voltage_||T = 25°C<br>VJ|||400|V| |VRRM<br>_max. repetitive reverse blocking voltage_||T = 25°C<br>VJ|||400|V| |IR<br>_reverse current, drain current_|V = V<br>R<br>V = V<br>R<br>400<br>400|T = 25°C<br>VJ<br>T = °C<br>VJ<br>150|||1<br>0.15|mA<br>µA| |V F<br>_forward voltage drop_|I = A<br>F<br>10<br>I = A<br>F<br>20|T = 25°C<br>VJ|||1.32<br>1.51|V<br>V| ||I = A<br>F<br>10<br>I = A<br>F<br>20|T = °C<br>VJ<br>150|||1.03<br>1.24|V<br>V| |I<br>FAV<br>_average forward current_|T = °C<br>C<br>150<br>d =<br>rectangular<br>0.5|T = °C<br>VJ<br>175|||10|A| |VF0<br>r F<br>_threshold voltage_<br>_slope resistance_<br>_for power loss calculation only_||T = °C<br>VJ<br>175|||0.77<br>19.8|V<br>mΩ| |R<br>_thermal resistance junction to case_<br>thJC|||||2.3|K/W| |R<br>_thermal resistance case to heatsink_<br>thCH||||0.50||K/W| |Ptot<br>_total power dissipation_||T = 25°C<br>C|||65|W| |IFSM<br>t = 10 ms; (50 Hz), sine;<br>_max. forward surge current_<br>V = 0 V<br>R||T = 45°C<br>VJ|||150|A| |CJ<br>_junction capacitance_<br>V = V<br>200<br>f = 1 MHz<br>R||T = 25°C<br>VJ||12||pF| |_reverse recovery time_<br>IRM<br>_max. reverse recovery current_<br>IF =<br>A;<br>10<br>-diF<br>=<br>A/µs<br>200<br>/dt<br>t rr<br>VR =<br>V<br>270||TVJ =<br>°C<br>25<br>T<br>= 125°C<br>VJ||4<br>6||A<br>A| |||TVJ =<br>°C<br>25<br>T<br>= 125°C<br>VJ||45<br>65||ns<br>ns| IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131101a © 2013 IXYS all rights reserved **DPG20C400PB** |Ratings<br>**Package**<br>**TO-220**|Ratings<br>**Package**<br>**TO-220**|Ratings<br>**Package**<br>**TO-220**|Ratings<br>**Package**<br>**TO-220**|Ratings<br>**Package**<br>**TO-220**| |---|---|---|---|---| |Symbol<br>Definition<br>Conditions|min.|typ.|max.|Unit| |I RMS<br>_RMS current_<br>per terminal<br>1)|||35|A| |TVJ<br>_virtual junction temperature_|-55||175|°C| |Top<br>_operation temperature_|-55||150|°C| |Tstg<br>_storage temperature_|-55||150|°C| |Weight||2||g| |M D<br>_mounting torque_<br>FC<br>_mounting force with clip_|0.4||0.6|| ||20|||| **==> picture [192 x 142] intentionally omitted <==** **----- Start of picture text -----**<br> Product Marking<br>Part Number XXXXXX<br>Logo Zyyww<br>Assembly Line<br>Lot # abcdef<br>Date Code<br>**----- End of picture text -----**<br> ## Part number - D = Diode P = HiPerFRED G = extreme fast 20 = Current Rating [A] C = Common Cathode - 400 = Reverse Voltage [V] PB = TO-220AB (3) |Ordering||Part Number|Markingon Product|Markingon Product|DeliveryMode|Quantity|Code No.| |---|---|---|---|---|---|---|---| |Standard||DPG20C400PB|DPG20C400PB||Tube|50|506647| ||||||||| |||Similar Part|Package|Voltage class|||| |||DPG20C400PN|TO-220ABFP(3)|400|||| |||DPG20C400PC|TO-263AB(D2Pak) (2)|400|||| **Equivalent Circuits for Simulation** _* on die level_ T =VJ 175 °C I V0 ~~R~~ 0 Fast Diode V 0 max _threshold voltage_ 0.77 V R0 max _slope resistance *_ 16.6 mΩ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131101a © 2013 IXYS all rights reserved **DPG20C400PB** ## **Outlines TO-220** ||||||||||||||||||||||||Dim.|Millimeter|Millimeter|Inches|Inches|| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| ||||||||||||||||||||A|||||Min.|Max.|Min.|Max.|| |||||||||||||||||||||||||||||| ||||||E|||||||||Q||||A1|||||A<br>A1|4.32<br>1.14|4.82<br>1.39|0.170<br>0.045|0.190<br>0.055|| ||||||||||||||||||||||||A2|2.29|2.79|0.090|0.110|| |ØP||||||||||||4||||H1|||||||b<br>b2|0.64<br>1.15|1.01<br>1.65|0.025<br>0.045|0.040<br>0.065|| ||||||||||||||||D||||||||C|0.35|0.56|0.014|0.022|| ||||||||||||||||||||||||D|14.73|16.00|0.580|0.630|| |||1||||2|||3||||||||||||||E|9.91|10.66|0.390|0.420|| |3x b2|||||||||||||L1||||||||||e<br>H1|2.54<br>5.85|BSC<br>6.85|0.100<br>0.230|BSC<br>0.270|| ||||||||||||||||L||||||||L|12.70|13.97|0.500|0.550|| ||||||||||||||||||||||||L1|2.79|5.84|0.110|0.230|| ||||||||||||||||||||||||ØP|3.54|4.08|0.139|0.161|| |3x b||||||||||||2x e|||||C<br>A2||||||Q|2.54|3.18|0.100|0.125|| |||||||||||||||||||||||||||||| **==> picture [483 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> 1 2 3<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131101a © 2013 IXYS all rights reserved **DPG20C400PB** ## **Fast Diode** **==> picture [508 x 660] intentionally omitted <==** **----- Start of picture text -----**<br> 30 0.4 12<br>TVJ = 125°C 20 A TVJ = 125°C 20 A<br>25 VR = 270 V VR = 270 V 10 A<br>10<br>5 A<br>20 0.3<br>10 A<br>IF 15 Qrr IRM 8<br>[A] TVJ = 125°C [μC] 5 A [A] 6<br>10 0.2<br>TVJ = 25°C 4<br>5<br>0 0.1 2<br>0.0 0.4 0.8 1.2 1.6 2.0 0 100 200 300 400 500 0 100 200 300 400 500<br>VF [V] -diF /dt [A/μs] -diF/dt [A/μs]<br>Fig. 1 Forward current Fig. 2 Typ. reverse recov. charge Fig. 3 Typ. reverse recov. current<br>IF versus VF Qrr versus -diF /dt IRM versus -diF /dt<br>1.4 100 14 350<br>1.2 I F = 20 A TVVJR = 125°C= 270 V 12 I TFVJ = 125°C = 10 A 300<br>VR = 270 V<br>80<br>1.0 10 A 10 250<br>0.8 trr 5 A VFR8 200<br>Kf 60 [V] tfr<br>0.6 IRM [ns] 6 VFR 150[ns]<br>0.4 4 100<br>40<br>0.2 Qrr 2 tfr 50<br>0.0 20 0 0<br>0 40 80 120 160 0 100 200 300 400 500 0 100 200 300 400 500<br>TVJ [°C] -diF /dt [A/μs] -diF /dt [A/μs]<br>Fig. 4 Typ. dynamic parameters Fig. 5 Typ. reverse recov. time Fig. 6 Typ. forward recovery voltage<br>Qrr, IRM versus TVJ trr versus -diF /dt VFR and tfr versus diF /dt<br>25 3<br>TVJ = 125°C<br>VR = 270 V<br>20<br>2<br>Erec15 IF = 5 A ZthJC<br>10 A [K/W]<br>10 20 A<br>[μJ] 1<br>5<br>0 0<br>0 100 200 300 400 500 1 10 100 1000 10000<br>-diF /dt [A/μs] t [ms]<br>Fig. 7 Typ. recovery energy Fig. 8 Transient thermal resistance junction to case<br>Erec versus -diF /dt<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131101a © 2013 IXYS all rights reserved
Updated at June 4, 2026
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