DPG20C300PN

**DPG 20 C 300PN** 

advanced 

## **HiPerFRED** 

High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode 

**VRRM = 300 V IFAV = 2x 10 A t rr = 35 ns** 

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**Part number** _(Marking on product)_ 

DPG 20 C 300PN 

## **Features / Advantages:** 

- Planar passivated chips 

- Very low leakage current 

- Very short recovery time 

- Improved thermal behaviour 

- Very low Irm-values 

- Very soft recovery behaviour 

- Avalanche voltage rated for reliable operation 

## **Applications:** 

- Antiparallel diode for high frequency switching devices 

- Antisaturation diode 

- Snubber diode 

- Free wheeling diode 

- Rectifiers in switch mode power supplies (SMPS) 

- Uninterruptible power supplies (UPS) 

## **Package:** 

## TO-220FPAB 

   - Industry standard outline 

   - Plastic overmolded tab for electrical isolation 

   - Epoxy meets UL 94V-0 

   - RoHS compliant 

- Soft reverse recovery for low EMI/RFI 

- Low Irm reduces: 

- Power dissipation within the diode 

- Turn-on loss in the commutating switch 

||**R a t i n g s**|**R a t i n g s**|**R a t i n g s**||
|---|---|---|---|---|
|**Symbol**<br>**Definition**<br>**Conditions**|**min.**|**typ.**|**max.**|**Unit**|
|VRRM<br>_max. repetitive reverse voltage_<br>TVJ<br>°C<br>=<br>25<br>~~rT~~|~~——~~<br>~~rT~~|~~——~~<br>~~rT~~|300|V|
|IR<br>VR =<br>TVJ<br>V<br>°C<br>=<br>TVJ<br>°C<br>=<br>VR =<br>300<br>V<br>300<br>25<br>_reverse current_<br>150<br>~~rT~~|~~——~~<br>~~rT~~|~~——~~<br>~~rT~~|1<br>0.06|µA<br>mA|
|VF<br>TVJ =<br>°C<br>IF =<br>A<br>10<br>25<br>_forward voltage_<br>TVJ =<br>°C<br>IF =<br>A<br>10<br>150<br>IF =<br>A<br>20<br>IF =<br>A<br>20<br>~~rT~~|~~rT~~|~~rT~~|1.27<br>1.45<br>0.98<br>1.17|V<br>V<br>V<br>V|
|IFAV<br>TC = 125 °C<br>rectangular, d = 0.5<br>_average forward current_<br>~~rT~~|~~rT~~<br>~~——~~<br>|~~rT~~<br>~~——~~<br>~~|~~|10<br>~~|~~|A<br>~~|~~|
|VF0<br>TVJ = 175 °C<br>r F<br>_threshold voltage_<br>_slope resistance_<br>_for power loss calculation only_|~~——~~<br>~~|~~|~~——~~<br>~~||~~|0.69<br>22.8<br>~~|~~|V<br>Ω<br>m<br>~~|~~|
|R thJC<br>_thermal resistance junction to case_||~~|~~|4.40<br>~~|~~|K/W<br>~~|~~|
|TVJ<br>_virtual junction temperature_|-55||175|°C|
|Ptot<br>TC<br>°C<br>=<br>25<br>_total power dissipation_|||65|W|
|IFSM<br>ms (50 Hz), sine<br>TVJ =<br>45 °C<br>tp = 10<br>_max. forward surge current_|~~i~~|~~i~~|100<br>~~i~~|A|
|IRM<br>/dt<br>IF =<br>A;<br>VR =<br>V<br>t rr<br>10<br>-diF<br>=<br>200 A/µs<br>100<br>_max. reverse recovery current_<br>_reverse recovery time_<br>TVJ<br>°C<br>=<br>25<br>TVJ<br>°C<br>= 125<br>TVJ<br>°C<br>=<br>25<br>TVJ<br>°C<br>= 125<br>~~|~~|~~i~~<br>~~|~~|3<br>35<br>~~i~~<br>|~~i~~|A<br>A<br>ns<br>ns|
|CJ<br>_junction capacitance_<br>VR =<br>V;<br>150<br>TVJ<br>f = 1 MHz<br>=<br>°C<br>25<br>~~|~~|~~||~~|~~|~~||pF|
|EAS<br>TVJ<br>°C<br>=<br>IAS=<br>A;<br>L =<br>µH<br>25<br>_non-repetitive avalanche energy_<br>~~|~~|~~||~~|~~|~~|tbd|mJ|
|IAR<br>VA =<br>f = 10 kHz<br>1.5·VR typ.;<br>_repetitive avalanche current_|||tbd|A|



IXYS reserves the right to change limits, conditions and dimensions. 

* Data according to IEC 60747and per diode unless otherwise specified 

© 2006 IXYS all rights reserved 

**DPG 20 C 300PN** 

advanced 

|advanced|advanced|advanced|advanced|
|---|---|---|---|
|**Symbol**<br>**Definition**<br>**Ratings**<br>**typ.**<br>**max.**<br>**min.**<br>**Conditions**<br>**Unit**||||
|IRMS<br>per pin*<br>_RMS current_||35|A|
|RthCH<br>_thermal resistance case to heatsink_||0.50|K/W|
|MD<br>_mounting torque_<br>F C<br>_mounting force with clip_|0.4<br>20|0.6<br>60|Nm<br>N|
|T stg<br>_storage temperature_|-55|150|°C|
|Weight||2|g|



* Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. 

In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. 

## Outlines TO-220FPAB 

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ØP<br>A<br>E<br>A1<br>H<br>Q<br>D<br>L1<br>A2<br>L<br>b1 b c<br>e<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, conditions and dimensions. 

* Data according to IEC 60747and per diode unless otherwise specified 

© 2006 IXYS all rights reserved