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DPG15I200PA
Fast / Ultrafast Diode, High Performance, 200 V, 15 A, Single, 1.25 V, 35 ns, 150 A
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:200V; Forward Current If(AV):15A; Diode Configuration:Single; Forward Voltage VF Max:1.25V; Reverse Recovery Time trr Max:35ns; Forward Surge Current Ifsm M
- SVHC: No SVHC (17-Jan-2023)
- No. of Pins: 2 Pin
- Product Range: DPG15
- Qualification: -
- Diode Case Style: TO-220AC
- Diode Configuration: Single
- Forward Voltage Max: 1.25V
- Forward Surge Current: 150A
- Reverse Recovery Time: 35ns
- Average Forward Current: 15A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 200V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.11 € |
| Current stock | 50+ |
| Lead time | 30 days |
Datasheet
## **DPG15I200PA** ## **HiPerFRED²** VRRM = 200 V I FAV = 15 A[t] rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode ## **Part number** DPG15I200PA Backside: cathode **==> picture [115 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> 3 1<br>**----- End of picture text -----**<br> ## **Features / Advantages:** - Planar passivated chips - Very low leakage current - Very short recovery time - Improved thermal behaviour - Very low Irm-values - Very soft recovery behaviour - Avalanche voltage rated for reliable operation - Soft reverse recovery for low EMI/RFI ## **Applications:** - Antiparallel diode for high frequency switching devices - Antisaturation diode - Snubber diode - Free wheeling diode - Rectifiers in switch mode power supplies (SMPS) - Uninterruptible power supplies (UPS) ## **Package:** TO-220 - Industry standard outline - RoHS compliant - Epoxy meets UL 94V-0 - Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131125a © 2013 IXYS all rights reserved **DPG15I200PA** |**Fast Diode**|**Fast Diode**|Ratings<br>typ.<br>max.<br>min.<br>Unit|Ratings<br>typ.<br>max.<br>min.<br>Unit|Ratings<br>typ.<br>max.<br>min.<br>Unit|Ratings<br>typ.<br>max.<br>min.<br>Unit|Ratings<br>typ.<br>max.<br>min.<br>Unit| |---|---|---|---|---|---|---| |Symbol<br>Definition<br>Conditions||||||| |VRSM<br>_max. non-repetitive reverse blocking voltage_||T = 25°C<br>VJ|||200|V| |VRRM<br>_max. repetitive reverse blocking voltage_||T = 25°C<br>VJ|||200|V| |IR<br>_reverse current, drain current_|V = V<br>R<br>V = V<br>R<br>200<br>200|T = 25°C<br>VJ<br>T = °C<br>VJ<br>150|||1<br>0.08|mA<br>µA| |V F<br>_forward voltage drop_|I = A<br>F<br>15<br>I = A<br>F<br>30|T = 25°C<br>VJ|||1.26<br>1.51|V<br>V| ||I = A<br>F<br>15<br>I = A<br>F<br>30|T = °C<br>VJ<br>150|||1.01<br>1.29|V<br>V| |I<br>FAV<br>_average forward current_|T = °C<br>C<br>145<br>d =<br>rectangular<br>0.5|T = °C<br>VJ<br>175|||15|A| |VF0<br>r F<br>_threshold voltage_<br>_slope resistance_<br>_for power loss calculation only_||T = °C<br>VJ<br>175|||0.69<br>18|V<br>mΩ| |R<br>_thermal resistance junction to case_<br>thJC|||||1.7|K/W| |R<br>_thermal resistance case to heatsink_<br>thCH||||0.50||K/W| |Ptot<br>_total power dissipation_||T = 25°C<br>C|||90|W| |IFSM<br>t = 10 ms; (50 Hz), sine;<br>_max. forward surge current_<br>V = 0 V<br>R||T = 45°C<br>VJ|||240|A| |CJ<br>_junction capacitance_<br>V = V<br>150<br>f = 1 MHz<br>R||T = 25°C<br>VJ||20||pF| |_reverse recovery time_<br>IRM<br>_max. reverse recovery current_<br>IF =<br>A;<br>15<br>-diF<br>=<br>A/µs<br>200<br>/dt<br>t rr<br>VR =<br>V<br>130||TVJ =<br>°C<br>25<br>T<br>= 125°C<br>VJ||3<br>6.5||A<br>A| |||TVJ =<br>°C<br>25<br>T<br>= 125°C<br>VJ||35<br>55||ns<br>ns| IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131125a © 2013 IXYS all rights reserved **DPG15I200PA** |Ratings<br>**Package**<br>**TO-220**|Ratings<br>**Package**<br>**TO-220**|Ratings<br>**Package**<br>**TO-220**|Ratings<br>**Package**<br>**TO-220**|Ratings<br>**Package**<br>**TO-220**| |---|---|---|---|---| |Symbol<br>Definition<br>Conditions|min.|typ.|max.|Unit| |I RMS<br>_RMS current_<br>per terminal|||35|A| |TVJ<br>_virtual junction temperature_|-55||175|°C| |Top<br>_operation temperature_|-55||150|°C| |Tstg<br>_storage temperature_|-55||150|°C| |Weight||2||g| |M D<br>_mounting torque_<br>FC<br>_mounting force with clip_|0.4||0.6|| ||20|||| **==> picture [192 x 142] intentionally omitted <==** **----- Start of picture text -----**<br> Product Marking<br>Part Number XXXXXX<br>Logo Zyyww<br>Assembly Line<br>Lot # abcdef<br>Date Code<br>**----- End of picture text -----**<br> ## Part number - D = Diode P = HiPerFRED G = extreme fast 15 = Current Rating [A] I = Single Diode - 200 = Reverse Voltage [V] PA = TO-220AC (2) |Ordering|Part Number|Markingon Product|DeliveryMode|Quantity|Code No.| |---|---|---|---|---|---| |Standard|DPG15I200PA|DPG15I200PA|Tube|50|506661| |**Equivalent Circuits for Simulation**<br>T =<br>VJ<br>175 °C<br>_* on die level_|**Equivalent Circuits for Simulation**<br>T =<br>VJ<br>175 °C<br>_* on die level_| |---|---| |I|V0<br>~~R~~0| IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131125a © 2013 IXYS all rights reserved **DPG15I200PA** ## **Outlines TO-220** ||||||||||||||||A|A||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| ||||||E|||||Q||||A1|||||Dim.|Millimeter||Inches||| |||||||||||||||||||||Min.|Max.|Min.|Max.|| |ØP|||||||||4|||H1|||||||A<br>A1|4.32<br>1.14|4.82<br>1.39|0.170<br>0.045|0.190<br>0.055|| ||||||||||||||||||||A2|2.29|2.79|0.090|0.110|| |||||||||||||||||||||||||| ||||||||||||D||||||||b|0.64|1.01|0.025|0.040|| ||||||||||||||||||||b2|1.15|1.65|0.045|0.065|| ||||||||||||||||||||C|0.35|0.56|0.014|0.022|| |||1||||3|||||||||||||D|14.73|16.00|0.580|0.630|| |2x b2||||||||||L1|L||||||||E<br>e<br>H1|9.91<br>5.08<br>5.85|10.66<br>BSC<br>6.85|0.390<br>0.200<br>0.230|0.420<br>BSC<br>0.270|| ||||||||||||||||||||L|12.70|13.97|0.500|0.550|| ||||||||||||||||||||L1|2.79|5.84|0.110|0.230|| |2x b|||||e||||||||C<br>A2||||||ØP<br>Q|3.54<br>2.54|4.08<br>3.18|0.139<br>0.100|0.161<br>0.125|| |||||||||||||||||||||||||| **==> picture [483 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> 3 1<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131125a © 2013 IXYS all rights reserved **DPG15I200PA** ## **Fast Diode** **==> picture [508 x 660] intentionally omitted <==** **----- Start of picture text -----**<br> 80 0.5 16<br>TVJ = 125°C<br>70 0.4 VR = 130 V 30 A 14 II F F = 15 A= 30 A<br>60 12 I F = 7.5 A<br>15 A<br>50 TVJ = 25°C IRM 10<br>IF 40 150°C Qrr 0.3 7.5 A 8<br>[A]<br>[A]<br>[μC] 0.2<br>30 6<br>20 4<br>0.1<br>10 2 TVJ = 125°C<br>VR = 130 V<br>0 0.0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 0 100 200 300 400 500 600 0 100 200 300 400 500 600<br>VF [V] -diF /dt [A/μs] -diF /dt [A/μs]<br>Fig. 1 Forward current Fig. 2 Typ. reverse recov. charge Fig. 3 Typ. peak reverse current<br>IF versus VF Qrr versus -diF /dt IRM versus -diF /dt<br>1.4 70 16 400<br>TVJ = 125°C<br>1.2 60 VR = 130 V 14 TVJ = 125°C<br>1.0 12 I F = 15 A 300<br>IF = 30 A 10 VR = 130 V tfr<br>50<br>Kf 0.8 trr VFR 8 200<br>0.6<br>IRM [ns] 40 [V] 6 [ns]<br>15 A<br>0.4<br>7.5 A 4 100<br>0.2 Qrr 30 2 VFR tfr<br>0.0 20 0 0<br>0 20 40 60 80 100 120 140 160 0 100 200 300 400 500 600 0 100 200 300 400 500 600<br>TVJ [°C] -diF /dt [A/μs] -diF /dt [A/μs]<br>Fig. 4 Typ. dynamic parameters Fig. 5 Typ. recov. time Fig. 6 Typ. peak forward voltage<br>Qrr, IRM versus TVJ trr versus -diF /dt VFR and tfr versus diF /dt<br>16 1.8<br>14<br>1.6<br>12<br>IF = 30 A 1.4<br>Erec10 I IFF = 15 A = 7.5 A ZthJC1.2<br>8<br>[K/W]<br>[μJ] 6 1.0<br>4 0.8<br>2 TVJ = 125°C<br>VR = 130 V 0.6<br>0<br>0 100 200 300 400 500 600 1 10 100 1000 10000<br>-diF /dt [A/μs] t [ms]<br>Fig. 7 Typ. recovery energy Fig. 8 Transient thermal resistance junction to case<br>Erec versus -diF /dt<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131125a © 2013 IXYS all rights reserved
Updated at June 4, 2026
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