Image not available
Illustrative purposes only
DPG10I300PA
Fast / Ultrafast Diode, Epitaxial Diode (FRED), 300 V, 10 A, Single, 980 mV, 35 ns, 100 A
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:300V; Forward Current If(AV):10A; Diode Configuration:Single; Forward Voltage VF Max:980mV; Reverse Recovery Time trr Max:35ns; Forward Surge Current Ifsm Max:10
- SVHC: No SVHC (17-Jan-2023)
- No. of Pins: 2 Pin
- Product Range: DPG10
- Qualification: -
- Diode Case Style: TO-220AC
- Diode Configuration: Single
- Forward Voltage Max: 980mV
- Forward Surge Current: 100A
- Reverse Recovery Time: 35ns
- Average Forward Current: 10A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 300V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.84 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **DPG10I300PA** ## **HiPerFRED²** VRRM = 300 V I FAV = 10 A[t] rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode ## **Part number** DPG10I300PA Backside: cathode **==> picture [115 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> 3 1<br>**----- End of picture text -----**<br> ## **Features / Advantages:** - Planar passivated chips - Very low leakage current - Very short recovery time - Improved thermal behaviour - Very low Irm-values - Very soft recovery behaviour - Avalanche voltage rated for reliable operation - Soft reverse recovery for low EMI/RFI ## **Applications:** - Antiparallel diode for high frequency switching devices - Antisaturation diode - Snubber diode - Free wheeling diode - Rectifiers in switch mode power supplies (SMPS) - Uninterruptible power supplies (UPS) ## **Package:** TO-220 - Industry standard outline - RoHS compliant - Epoxy meets UL 94V-0 - Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131125a © 2013 IXYS all rights reserved ## **DPG10I300PA** |**Fast Diode**|**Fast Diode**|Ratings<br>typ.<br>max.<br>min.<br>Unit|Ratings<br>typ.<br>max.<br>min.<br>Unit|Ratings<br>typ.<br>max.<br>min.<br>Unit|Ratings<br>typ.<br>max.<br>min.<br>Unit|Ratings<br>typ.<br>max.<br>min.<br>Unit| |---|---|---|---|---|---|---| |Symbol<br>Definition<br>Conditions||||||| |VRSM<br>_max. non-repetitive reverse blocking voltage_||T = 25°C<br>VJ|||300|V| |VRRM<br>_max. repetitive reverse blocking voltage_||T = 25°C<br>VJ|||300|V| |IR<br>_reverse current, drain current_|V = V<br>R<br>V = V<br>R<br>300<br>300|T = 25°C<br>VJ<br>T = °C<br>VJ<br>150|||1<br>0.06|mA<br>µA| |V F<br>_forward voltage drop_|I = A<br>F<br>10<br>I = A<br>F<br>20|T = 25°C<br>VJ|||1.27<br>1.45|V<br>V| ||I = A<br>F<br>10<br>I = A<br>F<br>20|T = °C<br>VJ<br>150|||0.98<br>1.17|V<br>V| |I<br>FAV<br>_average forward current_|T = °C<br>C<br>150<br>d =<br>rectangular<br>0.5|T = °C<br>VJ<br>175|||10|A| |VF0<br>r F<br>_threshold voltage_<br>_slope resistance_<br>_for power loss calculation only_||T = °C<br>VJ<br>175|||0.74<br>17.7|V<br>mΩ| |R<br>_thermal resistance junction to case_<br>thJC|||||2.3|K/W| |R<br>_thermal resistance case to heatsink_<br>thCH||||0.50||K/W| |Ptot<br>_total power dissipation_||T = 25°C<br>C|||65|W| |IFSM<br>t = 10 ms; (50 Hz), sine;<br>_max. forward surge current_<br>V = 0 V<br>R||T = 45°C<br>VJ|||140|A| |CJ<br>_junction capacitance_<br>V = V<br>150<br>f = 1 MHz<br>R||T = 25°C<br>VJ||15||pF| |_reverse recovery time_<br>IRM<br>_max. reverse recovery current_<br>IF =<br>A;<br>10<br>-diF<br>=<br>A/µs<br>200<br>/dt<br>t rr<br>VR =<br>V<br>200||TVJ =<br>°C<br>25<br>T<br>= 125°C<br>VJ||3<br>5.5||A<br>A| |||TVJ =<br>°C<br>25<br>T<br>= 125°C<br>VJ||35<br>45||ns<br>ns| IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131125a © 2013 IXYS all rights reserved **DPG10I300PA** |Ratings<br>**Package**<br>**TO-220**|Ratings<br>**Package**<br>**TO-220**|Ratings<br>**Package**<br>**TO-220**|Ratings<br>**Package**<br>**TO-220**|Ratings<br>**Package**<br>**TO-220**| |---|---|---|---|---| |Symbol<br>Definition<br>Conditions|min.|typ.|max.|Unit| |I RMS<br>_RMS current_<br>per terminal|||35|A| |TVJ<br>_virtual junction temperature_|-55||175|°C| |Top<br>_operation temperature_|-55||150|°C| |Tstg<br>_storage temperature_|-55||150|°C| |Weight||2||g| |M D<br>_mounting torque_<br>FC<br>_mounting force with clip_|0.4||0.6|| ||20|||| **==> picture [192 x 142] intentionally omitted <==** **----- Start of picture text -----**<br> Product Marking<br>Part Number XXXXXX<br>Logo Zyyww<br>Assembly Line<br>Lot # abcdef<br>Date Code<br>**----- End of picture text -----**<br> ## Part number - D = Diode P = HiPerFRED G = extreme fast 10 = Current Rating [A] I = Single Diode - 300 = Reverse Voltage [V] PA = TO-220AC (2) |Ordering||Part Number|Markingon Product|Markingon Product|DeliveryMode|Quantity|Code No.| |---|---|---|---|---|---|---|---| |Standard||DPG10I300PA|DPG10I300PA||Tube|50|506640| ||||||||| |||Similar Part|Package|Voltage class|||| |||DPG10IM300UC|TO-252AA(DPak)|300|||| |**Equivalent Circuits for Simulation**<br>T =<br>VJ<br>175 °C<br>_* on die level_|**Equivalent Circuits for Simulation**<br>T =<br>VJ<br>175 °C<br>_* on die level_| |---|---| |I|V0<br>~~R~~0| IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131125a © 2013 IXYS all rights reserved **DPG10I300PA** ## **Outlines TO-220** ||||||||||||||||A|A||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| ||||||E|||||Q||||A1|||||Dim.|Millimeter||Inches||| |||||||||||||||||||||Min.|Max.|Min.|Max.|| |ØP|||||||||4|||H1|||||||A<br>A1|4.32<br>1.14|4.82<br>1.39|0.170<br>0.045|0.190<br>0.055|| ||||||||||||||||||||A2|2.29|2.79|0.090|0.110|| |||||||||||||||||||||||||| ||||||||||||D||||||||b|0.64|1.01|0.025|0.040|| ||||||||||||||||||||b2|1.15|1.65|0.045|0.065|| ||||||||||||||||||||C|0.35|0.56|0.014|0.022|| |||1||||3|||||||||||||D|14.73|16.00|0.580|0.630|| |2x b2||||||||||L1|L||||||||E<br>e<br>H1|9.91<br>5.08<br>5.85|10.66<br>BSC<br>6.85|0.390<br>0.200<br>0.230|0.420<br>BSC<br>0.270|| ||||||||||||||||||||L|12.70|13.97|0.500|0.550|| ||||||||||||||||||||L1|2.79|5.84|0.110|0.230|| |2x b|||||e||||||||C<br>A2||||||ØP<br>Q|3.54<br>2.54|4.08<br>3.18|0.139<br>0.100|0.161<br>0.125|| |||||||||||||||||||||||||| **==> picture [483 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> 3 1<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131125a © 2013 IXYS all rights reserved **DPG10I300PA** ## **Fast Diode** **==> picture [508 x 660] intentionally omitted <==** **----- Start of picture text -----**<br> 30 0.3 12<br>TVJ = 125°C 20 A<br>25 VR = 200 V 10 TVJ = 125°C 20 A<br>TVJ = 25°C 10 A VR = 200 V 10 A<br>20 125°C 0.2 8<br>IF 15 150°C Qrr 5 A IRR 6 5 A<br>[μC] [A]<br>[A] 10 0.1 4<br>5 2<br>0 0.0 0<br>0.0 0.4 0.8 1.2 1.6 2.0 0 100 200 300 400 500 0 100 200 300 400 500<br>VF [V] -diF /dt [A/μs] -diF /dt [A/μs]<br>Fig. 1 Forward current Fig. 2 Typ. reverse recov. charge Fig. 3 Typ. reverse recov. current<br>IF versus VF Qrr versus -diF /dt IRR versus -diF /dt<br>1.4 80 12 600<br>TVJ = 125°C<br>1.2 V R = 200 V 10 500<br>1.0<br>60 8 400<br>Kf 0.80.6 IRR [ns]trr IF = 20 A V [V] FR 6 TV I FVJR = 200 V= 10 A= 125°C [ns]300tfr<br>40 4 200<br>0.4<br>10 A<br>Qrr 2 100<br>0.2 5 A VFR tfr<br>0.0 20 0 0<br>0 40 80 120 160 0 100 200 300 400 500 0 100 200 300 400 500<br>TVJ [°C] -diF /dt [A/μs] -diF /dt [A/μs]<br>Fig. 4 Typ. dynamic parameters Fig. 5 Typ. reverse recov. time Fig. 6 Typ. forward recov. voltage<br>Qrr, IRR versus TVJ trr versus -diF /dt VFR and tfr versus diF /dt<br>10 3<br>TVJ = 125°C<br>VR = 200 V<br>8<br>2<br>Erec 6 IF = 5 A10 A ZthJH<br>20 A<br>[K/W]<br>4<br>[μJ]<br>1<br>R thi [K/W] t i [s]<br>2 0.3866 0.0004<br>0.7062 0.0025<br>0.8127 0.022<br>0.3945 0.13<br>0 0<br>0 100 200 300 400 500 0.001 0.01 0.1 1 10<br>-diF /dt [A/μs] t [s]<br>Fig. 7 Typ. recovery energy Fig. 8 Transient thermal resistance junction to case<br>Erec versus -diF /dt<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131125a © 2013 IXYS all rights reserved
Updated at June 4, 2026
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →