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DPG10I200PM
Fast / Ultrafast Diode, Epitaxial Diode (FRED), 200 V, 10 A, Single, 980 mV, 35 ns, 100 A
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- No. of Pins: 2 Pin
- Product Range: DPG10
- Diode Case Style: TO-220FPAC
- Diode Configuration: Single
- Forward Voltage Max: 980mV
- Forward Surge Current: 100A
- Reverse Recovery Time: 35ns
- Average Forward Current: 10A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 200V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 0.848 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**DPG 10 I 200PM** advanced ## **HiPerFRED²** High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode **VRRM = 200 V IFAV = 10 A t rr = 35 ns** **Part number** _(Marking on product)_ **==> picture [88 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> 3 1<br>**----- End of picture text -----**<br> DPG 10 I 200PM ## **Features / Advantages:** - Planar passivated chips - Very low leakage current - Very short recovery time - Improved thermal behaviour - Very low Irm-values - Very soft recovery behaviour - Avalanche voltage rated for reliable operation ## **Applications:** - Antiparallel diode for high frequency switching devices - Antisaturation diode - Snubber diode - Free wheeling diode - Rectifiers in switch mode power supplies (SMPS) - Uninterruptible power supplies (UPS) ## **Package:** ## TO-220FPAC - Industry standard outline - Plastic overmolded tab for electrical isolation - Epoxy meets UL 94V-0 - RoHS compliant - Soft reverse recovery for low EMI/RFI - Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ||**R a t i n g s**|**R a t i n g s**|**R a t i n g s**|| |---|---|---|---|---| |**Symbol**<br>**Definition**<br>**Conditions**|**min.**|**typ.**|**max.**|**Unit**| |VRRM<br>_max. repetitive reverse voltage_<br>TVJ<br>°C<br>=<br>25|~~Ee~~|~~Ee~~|200|V| |IR<br>VR =<br>TVJ<br>V<br>°C<br>=<br>TVJ<br>°C<br>=<br>VR =<br>200<br>V<br>200<br>25<br>_reverse current_<br>150|~~Ee~~|~~Ee~~|1<br>0.06|µA<br>mA| |VF<br>TVJ =<br>°C<br>IF =<br>A<br>10<br>25<br>_forward voltage_<br>TVJ =<br>°C<br>IF =<br>A<br>10<br>150<br>IF =<br>A<br>20<br>IF =<br>A<br>20|~~|~~|~~|~~|1.27<br>1.45<br>0.98<br>1.17|V<br>V<br>V<br>V| |IFAV<br>TC = 125 °C<br>rectangular, d = 0.5<br>_average forward current_|~~|~~|~~|~~|10|A| |VF0<br>TVJ = 175 °C<br>r F<br>_threshold voltage_<br>_slope resistance_<br>_for power loss calculation only_<br>~~|~~|~~|~~<br>~~||~~|~~|~~<br>~~||~~|0.69<br>22.8<br>~~|~~|V<br>Ω<br>m<br>~~|~~| |R thJC<br>_thermal resistance junction to case_<br>|~~|~~|~~|~~|4.40<br>~~|~~|K/W<br>~~|~~| |TVJ<br>_virtual junction temperature_|-55||175|°C| |Ptot<br>TC<br>°C<br>=<br>25<br>_total power dissipation_|||35|W| |IFSM<br>ms (50 Hz), sine<br>TVJ =<br>45 °C<br>tp = 10<br>_max. forward surge current_|||100|A| |IRM<br>/dt<br>IF =<br>A;<br>VR =<br>V<br>t rr<br>10<br>-diF<br>=<br>200 A/µs<br>100<br>_max. reverse recovery current_<br>_reverse recovery time_<br>TVJ<br>°C<br>=<br>25<br>TVJ<br>°C<br>= 125<br>TVJ<br>°C<br>=<br>25<br>TVJ<br>°C<br>= 125|~~|~~|3<br>35<br>~~|~~|~~|~~|A<br>A<br>ns<br>ns<br>~~|~~| |CJ<br>_junction capacitance_<br>VR =<br>V;<br>100<br>TVJ<br>f = 1 MHz<br>=<br>°C<br>25|~~|~~|~~|~~|~~|~~|pF<br>~~|~~| |EAS<br>TVJ<br>°C<br>=<br>IAS=<br>A;<br>L =<br>µH<br>100<br>25<br>_non-repetitive avalanche energy_|~~|~~|~~|~~|tbd<br>~~|~~|mJ<br>~~|~~| |IAR<br>VA =<br>f = 10 kHz<br>1.5·VR typ.;<br>_repetitive avalanche current_|||tbd|A| IXYS reserves the right to change limits, conditions and dimensions. * Data according to IEC 60747and per diode unless otherwise specified © 2006 IXYS all rights reserved **DPG 10 I 200PM** advanced |advanced|advanced|advanced| |---|---|---| |**Symbol**<br>**Definition**<br>**Ratings**<br>**typ.**<br>**max.**<br>**min.**<br>**Conditions**<br>**Unit**||| |IRMS<br>per pin*<br>_RMS current_|35|A| |RthCH<br>_thermal resistance case to heatsink_|0.50|K/W| |MD<br>_mounting torque_<br>0.4<br>FC<br>_mounting force with clip_<br>20|0.6<br>60|Nm<br>N| |T stg<br>_storage temperature_<br>-55|150|°C| |Weight|2|g| * Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. ## Outlines TO-220FPAC **==> picture [510 x 313] intentionally omitted <==** IXYS reserves the right to change limits, conditions and dimensions. * Data according to IEC 60747and per diode unless otherwise specified © 2006 IXYS all rights reserved
Updated at February 9, 2023
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