DNLS320E-13

**DNLS320E** 

| 

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LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR<br>Please click here to visit our online spice models database. Please click here to visit our online spice models database.<br>Features<br>•  Epitaxial Planar Die Construction  3<br>•  Low Collector-Emitter Saturation Resistance RCE(SAT) = 80mΩ at 3A  2<br>•  High DC Current Gain hFE > 400 at IC = 2A  1<br>•  Complementary PNP Type Available (DPLS325E)<br>•  Ideally Suited for Automated Assembly Processes  4<br>•  Ideal for Medium Power Switching or Amplification Applications  SOT-223<br>•  Lead Free By Design/RoHS Compliant (Note 1)  COLLECTOR<br>•  "Green" Device (Note 2)  2,4<br>Mechanical Data<br>BASE 1<br>•  Case: SOT-223<br>•  Case Material: Molded Plastic, "Green" Molding Compound.   3<br>UL Flammability Classification Rating 94V-0  TOP VIEW EMITTER<br>•  Moisture Sensitivity: Level 1 per J-STD-020D<br>•  Terminals: Finish — Matte Tin annealed over Copper Leadframe  Schematic and Pin Configuration<br>(Lead Free Plating). Solderable per MIL-STD-202, Method 208<br>peacar e pr e n —<br>3 E<br>C 4 2 C<br>1 B<br>**----- End of picture text -----**<br>


## **Features** 

## **Mechanical Data** 

- Marking Information: See Page 3 

- Ordering Information: See Page 3 

- Weight: 0.112 grams (approximate) 

## **Maximum Ratings** @TA = 25°C unless otherwise specified 

|**Maximum Ratingsgss**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol **|**Value**|**Unit**|
|Collector-Base Voltage|VCBO|20|V|
|Collector-Emitter Voltage|VCEO|20|V|
|Emitter-Base Voltage|VEBO|5|V|
|Continuous Collector Current|IC|3|A|
|Peak Pulse Current|ICM|8|A|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Power Dissipation @TA= 25°C(Note 3)|PD|1|W|
|Thermal Resistance, Junction to Ambient Air (Note 3) @TA= 25°C|RθJA|125|°C/W|
|Operatingand Storage Temperature Range|TJ, TSTG|-55 to +150|°C|



- Notes: 1.   No purposefully added lead. 

   2.   Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 

   3.   Device mounted on FR-4 PCB, pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 

DS31326 Rev. 3 - 2 

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DNLS320E © Diodes Incorporated 

## **Electrical Characteristics** @TA = 25°C unless otherwise specified 

|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol **|**Min**|**Typ**|**Max **|**Unit**|**Test Condition **|
|**OffCharacteristics**|||||||
|Collector-Base Breakdown Voltage|V(BR)CBO|20|⎯|⎯|V|IC= 100μA,IE= 0|
|Collector-Emitter Breakdown Voltage|V(BR)CEO|20|⎯|⎯|V|IC= 10mA,IB= 0|
|Emitter-Base Breakdown Voltage|V(BR)EBO|5|⎯|⎯|V|IE= 100μA,IC= 0|
|Collector Cutoff Current|ICBO|⎯|⎯|100|nA|VCB= 16V,IE= 0|
|Emitter Cutoff Current|IEBO|⎯|⎯|100|nA|VEB= 4V,IC= 0|
|**On Characteristics (Note 4)**<br>~~eeee~~|||||||
|Collector-Emitter Saturation Voltage<br>~~ee~~|VCE(SAT)<br>|⎯<br>⎯<br>⎯<br>~~ee~~|0.04<br>0.18<br>0.24<br>~~ee~~|0.10<br>0.50<br>0.45<br>~~ee~~|V<br>~~ee~~|IC= 0.1A, IB= 0.5mA<br>IC= 2A, IB= 10mA<br>IC= 3A,IB= 20mA<br>~~ee~~|
|Base-Emitter Saturation Voltage<br>~~ee~~|VBE(SAT)<br>|⎯<br>~~ee~~|⎯<br>~~ee~~|0.9<br>~~ee~~|V<br>~~ee~~|IC= 1A,IB= 10mA<br>~~ee~~|
|Base-Emitter Turn-On Voltage<br>~~ee ~~|VBE(ON)<br>|⎯<br> ~~ee~~|⎯<br>~~ee~~|0.9<br>~~ee~~|V<br>~~ee~~|VCE= 2V,IC= 1A<br>~~ee~~|
|DC Current Gain<br>~~a~~|hFE<br>~~a~~|500<br>400<br>150<br>~~a~~|⎯<br>⎯<br>⎯<br>~~a~~|⎯<br>⎯<br>⎯<br>~~a~~|⎯<br>~~a~~|VCE= 2V, IC= 0.1A<br>VCE= 2V, IC= 2A<br>VCE= 2V,IC= 6A<br>~~a~~|
|**AC Characteristics**<br>~~a~~|||||||
|Transition Frequency|fT|150|⎯|⎯|MHz|VCE= 5V,IC= 50mA,f = 50MHz|
|Input Capacitance|Cibo|⎯|230|⎯|pF|VEB= 0.5V,f = 1MHz|
|Output Capacitance|Cobo|⎯|23|⎯|pF|VCB= 10V,f = 1MHz|
|Switching Times|ton<br>toff|⎯<br>⎯|26<br>220|⎯<br>⎯|ns<br>ns|VCC= 10V, IC= 500mA<br>IB1= -IB2= 50mA|



Notes: 4.   Pulse Test: Pulse width ≤300μs. Duty cycle ≤2.0%. 

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1.0 3.5<br>3.0<br>0.8 IB = 5mA<br>NS EeEEE<br>2.5<br>IB = 4mA<br>0.6<br>PEN [EL 2.0 amin<br>IB = 3mA<br>0.4 eT TN I. 1.5 ia<br>IB = 2mA<br>1.0<br>0.2 IB = 1mA<br>0.5<br>0 SESTEEN 0 EEE(AR<br>0 25 50 75 100 125 150 0 1 2 3 4 5<br>TA, AMBIENT TEMPERATURE (°C) VCE, COLLECTOR-EMITTER VOLTAGE (V)<br>Fig. 1 Max Power Dissipation vs. Ambient Temperature<br>Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage<br>, POWER DISSIPATION (mW)<br>PD , COLLECTOR CURRENT (A)IC<br>**----- End of picture text -----**<br>


DS31326 Rev. 3 - 2 

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DNLS320E © Diodes Incorporated 

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2,000 0.5<br>0.4<br>| 1,500 SOTA ee<br>8k ONIECIIEEIE Ll<br>MestML Ul 0.3<br>BRN |<br>1,000<br>a<br>0.2<br>3 Ct ee ei<br>CeoN Ill LM<br>CUI 500<br>« IE AON LY<br>0.1<br>SS NIlli s eacilliMTHiTaee oni \ Wy ]<br>\<br>UI TT TTI aN LARS<br>0 UNE EEE ET HI 0 oomBeau!A T, = -55°C<br>0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10<br>Ip, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Fig . 3 Typical DC Current Gain vs . Collector Current Fig. 4 Typical Collector-Emitter Saturation Voltage<br>vs. Collector Current<br>1.21.0 Ao 1.21.0 AEE aS<br>I-A Tu PUTA FATIMATa<br>A ZG aHNl<br>0.8 0.8<br>ee Zl Aaa<br>ee Al<br>0.6 imme ON ga 0.6 scars AMOI Zz<br>aarti cabal STA<br>0.4 Sec— erelaErr 0.4 e at TANAe at CTT<br>Paced Cotapoe TT CUI PIE Ta, = 85°C zs<br>0.2 0.2<br>er AA A cece 1mt ARATEATA<br>0 FCC FET CCH 0 FCC CCT<br>CTT<br>0.001 0.01 0.1 1 10<br>0.001 0.01 0.1 1 10<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Fig. 5 Typical Base-Emitter Turn-On Voltage Fig. 6 Typical Base-Emitter Saturation Voltage<br>vs. Collector Current vs. Collector Current<br>, COLLECTOR-EMITTER<br>SATURATION VOLTAGE (V)<br>CE(SAT)<br>V<br>, BASE-EMITTER TURN-ON VOLTAGE (V) , BASE-EMITTER SATURATION VOLTAGE (V)<br>BE(ON)<br>V<br>BE(SAT)<br>V<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 5) 

|**Ordering Informationg Information Information**(Note 5)|||
|---|---|---|
|**Device**|**Packaging**|**Shipping**|
|DNLS320E-13|SOT-223|2500/Tape & Reel|



Notes: 5.   For packaging details, go to our website at http://www.diodes.com/ap2007.pdf. 

## **Marking Information** 

(Top View) N320 = Product Type Marking Code YWW YWW = Date Code Marking Y = Last digit of year ex: 7 = 2007 N320 WW = Week code 01 - 52 

DS31326 Rev. 3 - 2 

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DNLS320E © Diodes Incorporated 

1N CORPORATE 

## **Package Outline Dimensions** 

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D PF SOT-223<br>Dim  Min  Max  Typ<br>bt Odec ee A 1.55  ee 1.65  ee 1.60  eee<br>ee ee ee<br>ee A1 0.010 ee 0.15  ee 0.05  ee<br>b1 2.90  3.10  3.00<br>1 ee b2 0.60  ee 0.80  ee 0.70<br>C 0.20  0.30  0.25<br>ee ee ee ee<br>ee D 6.45  ee 6.55  ee 6.50  ee<br>E 3.45  3.55  3.50<br>7 ; ee<br>a E1 6.90  7.10  7.00<br>.<br>5ee e ee —  —  ee 4.60  ee<br>ott a e1 a —  —  2.30<br>7 ee L 0.85  ee 1.05  ee 0.95  ee<br>a Q 0.84  ee 0.94  ee 0.89<br>PE All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout:** 

## IMPORTANT NOTICE 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. 

## LIFE SUPPORT 

Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. 

DS31326 Rev. 3 - 2 

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DNLS320E © Diodes Incorporated