DNBT8105-7

**DNBT8105** 

**1A NPN SURFACE MOUNT TRANSISTOR** 

## **Features** 

- Epitaxial Planar Die Construction 

- Ideal for Medium Power Amplification and Switching 

- High Collector Current Rating 

- Complementary Version Available (DPBT8105) 

- **Lead Free By Design/RoHS Compliant (Note 1)** 

- **"Green Device" (Note 2)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Mechanical Data** 

- Case: SOT-23 

- Case Material: Molded Plastic, “Green” Molding Compound.  UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity:  Level 1 per J-STD-020D 

- Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 

- Terminal Connections: See Diagram 

- Marking Information: See Page 3 

- Ordering Information: See Page 3 

- Weight: 0.008 grams (approximate) 

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C<br>B E<br>Top View Device Schematic<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 3) 

|**Ordering Informationg Information Information** (Note 3)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DNBT8105-7|SOT-23|3000/Tape &Reel|



Notes: 1.   No purposefully added lead. 

2.   Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 

3.  For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 

## **Marking Information** 

K81 = Product Type Marking Code **K81** YM = Date Code Marking Y = Year (ex: S = 2005) M = Month (ex: 9 = September) 

Date Code Key 

**Year 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015** ~~Hf}~~ **Code** R S T ~~—}—__~~ U V ~~—} —__}—__}~~ W X ~~—_}~~ Y Z ~~—}—_}—_~~ A B ~~|~~ C ~~—J~~ **Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code** 1 2 3 4 5 6 7 8 9 O N D ~~———} —}—_} +} —_—_}—_ —_|—_ + | —~~ 

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DNBT8105 Document number: DS30513 Rev. 10 - 2 

June 2011 © Diodes Incorporated 

**DNBT8105** 

## **Maximum Ratings** @TA = 25°C unless otherwise specified 

|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Collector-Base Voltage|VCBO|80|V|
|Collector-Emitter Voltage|VCEO|60|V|
|Emitter-Base Voltage|VEBO|5|V|
|Collector Current - Continuous|IC|1|A|
|Peak Pulse Collector Current|ICM|2|A|



## **Thermal Characteristics** 

|**Thermal Characteristics**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Power Dissipation(Note 4) @TA= 25°C|PD|600|mW|
|Thermal Resistance,Junction to Ambient(Note 4) @TA= 25°C|RθJA|209|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C|



## **Electrical Characteristics** @TA = 25°C unless otherwise specified 

|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|**Symbol **|**Min**|**Max **|**Unit**|**Test Condition **|
|**OFFCHARACTERISTICS (Note 5)**||||||
|Collector-Base Breakdown Voltage|V(BR)CBO|80|⎯|V|IC= 100μA,IE= 0|
|Collector-Emitter Breakdown Voltage|(BR)CBO<br>V(BR)CEO|60|⎯|V|IC= 10mA,IB= 0|
|Emitter-Base Breakdown Voltage<br>~~Ce~~|(BR)CEO<br>V(BR)EBO<br>~~Ce~~|5<br>~~Ce~~|⎯<br>~~Ce~~|V<br>~~Ce~~|IE= 100μA,IC= 0<br>~~Ce~~|
|Collector Cutoff Current<br>~~Ce~~|(BR)EBO<br>ICBO<br>~~Ce~~|⎯<br>~~Ce~~|100<br>~~Ce~~|nA<br>~~Ce~~|VCB= 60V,IE= 0<br>~~Ce~~|
|Collector Cutoff Current<br>~~Ce~~<br>~~a~~|ICES<br>~~Ce~~<br>~~a~~|⎯<br>~~Ce~~<br>~~a~~|100<br>~~Ce~~<br>~~a~~|nA<br>~~Ce~~<br>~~a~~|VCE= 60V<br>~~Ce~~<br>~~a~~|
|Emitter Cutoff Current<br>~~a~~|IEBO<br>~~a~~|⎯<br>~~a~~|100<br>~~a~~|nA<br>~~a~~|VEB= 4V,IC= 0<br>~~a~~|
|**ON CHARACTERISTICS (Note 5)**<br>~~a~~||||||
|DC Current Gain|hFE<br>~~es~~|100<br>100<br>80<br>30<br>~~es~~|⎯<br>300<br>⎯<br>⎯<br>~~ee~~|⎯<br>~~ee~~|IC= 1mA, VCE= 5V<br>IC= 500mA, VCE= 5V<br>IC= 1A, VCE= 5V<br>IC= 2A,VCE= 5V|
|Collector-Emitter Saturation Voltage<br>~~rs~~|VCE(SAT)<br>~~rs~~<br>~~es~~|⎯<br>⎯<br>~~rs~~<br>~~es~~|0.25<br>0.5<br>~~rs~~<br>~~ee~~|V<br>~~rs~~<br>~~ee~~|IC= 500mA, IB= 50mA<br>IC= 1A,IB= 100mA<br>~~rs~~|
|Base-Emitter Saturation Voltage<br>~~Cr~~|VBE(SAT)<br>~~es ~~<br>~~Cr~~|⎯<br> ~~es~~<br>~~Cr~~|1.1<br>~~ee~~<br>~~Cr~~|V<br>~~ee~~<br>~~Cr~~|IC= 1A,IB= 100mA<br>~~Cr~~|
|Base-Emitter Turn On Voltage<br>~~Cr~~|BE(SAT)<br>VBE(ON)<br>~~Cr~~|⎯<br>~~Cr~~|1.0<br>~~Cr~~|V<br>~~Cr~~|IC= 1A,VCE= 5V<br>~~Cr~~|
|BE(ON)<br>**SMALLSIGNALCHARACTERISTICS**<br>~~Cr~~<br>~~>~~<br>~~YYHHNNWNHNNWH~~||||||
|Output Capacitance<br>~~|~~|Cobo<br>~~|~~|⎯<br>~~|~~<br>~~>~~|10<br>~~|~~<br>~~>~~|pF<br>~~|~~<br>~~YYHHNNWNHNNWH~~|VCB= 10V,f = 1.0MHz<br>~~|~~<br>~~YYHHNNWNHNNWH~~|
|Current Gain-Bandwidth Product<br>~~|~~|fT<br>~~|~~|150<br>~~|~~<br>~~>~~|⎯<br>~~|~~<br>~~>~~|MHz<br>~~|~~<br>~~YYHHNNWNHNNWH~~|VCE= 10V,IC= 50mA,f = 100MHz<br>~~|~~<br>~~YYHHNNWNHNNWH~~|



5.  Short duration pulse test used to minimize self-heating effect. 

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DNBT8105 Document number: DS30513 Rev. 10 - 2 

June 2011 © Diodes Incorporated 

**DNBT8105** 

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800 350<br>VCE = 5V<br>TTT TA = 125ºC<br>700 300<br>600<br>COOCeeeH 250 B TA = 85ºC o<br>500<br>ENS CON wTENT<br>200 TA = 25ºC<br>400<br>PF] AE | dott Bai aia \<br>150<br>ANSE<br>300<br>200 100 T A  = -55ºC<br>SeeNCEEE TT<br>100 R θJA  = 209°C/W 50<br>0 CNT 0 Ty TINT<br>0 25 50 75 PEIN 100 125 150 175 200 1 UM 10 100 ET A 1,000 E  L 10,000<br>TA, AMBIENT TEMPERATURE (°C) IC, COLLECTOR CURRENT (mA)<br>Fig. 1 Power Dissipation  Fig. 2 DC Current Gain vs. Collector Current<br>vs. Ambient Temperature (Note 1)<br>300 400<br>IC/IB = 10<br>350<br>250<br>IM TI 300 te UT)<br>200<br>250<br>ee<br>150 OUNCE TA = 125ºC a 200<br>TA = 85ºC 150<br>100 BU nvTVO geUVM NACCT<br>100<br>TA = 25ºC<br>Tn ta EAI TENE ai<br>50<br>50<br>a BSHRELES<br>0 SSS Ill 0 TTZa<br>1 10 100 1,000 1 10 100 1,000<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Fig. 3 Typical Collector-Emitter Saturation Voltage  Fig. 4 Typical Collector-Emitter Saturation Voltage<br>vs. Collector Current vs. Collector Current<br>1.2 1.2<br>VCE = 5V<br>1.0 1.0<br>A TA = -55ºC BirRa<br>0.8 0.8<br>TA = 25ºC<br>0.6 ae TA = 85ºC sneas 0.6 he ey<br>TA = 125ºC<br>0.4 0.4<br>cece == Eee tT<br>0.2 OU A 0.2 TTA<br>0 0<br>1 STITT 10 100 1,000 VT 10,000 1 SUT 10 100 UIAT 1,000 10,000<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Fig. 5 Typical Base-Emitter Turn-On Voltage  Fig. 6 Typical Base-Emitter Saturation Voltage<br>vs. Collector Current vs. Collector Current<br>, DC CURRENT GAIN<br>FE<br>h<br>, POWER DISSIPATION (mW)<br>D<br>P<br>(mV)<br>COLLECTOR-EMITTER<br>,  , COLLECTOR-EMITTER<br>CE (SAT) SATURATION VOLTAGE  CE(SAT) SATURATION VOLTAGE (mV)<br> V V<br>, BASE-EMITTER TURN-ON VOLTAGE (V) , BASE-EMITTER SATURATION VOLTAGE (V)<br>BE(ON)<br>V<br>BE(SAT)<br>V<br>**----- End of picture text -----**<br>


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DNBT8105 Document number: DS30513 Rev. 10 - 2 

June 2011 © Diodes Incorporated 

**DNBT8105** 

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120100 TTT<br>80<br>NTC<br>60<br>INCU<br>40 TINA<br>20 HNNTTUTTTNTTTATE<br>0 eee<br>0 5 10 15 20<br>VR, REVERSE VOLTAGE (V)<br>Fig. 7 Typical Capacitance Characteristics<br>CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


## **Package Outline Dimensions** 

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A SOT-23<br>Dim  Min  Max  Typ<br>A  0.37  0.51  0.40<br>a === B  1.20  1.40  1.30<br>B C<br>C  2.30  2.50  2.40<br>D  0.89 1.03 0.915<br>F  0.45 0.60 0.535<br>an ====<br>G 1.78 2.05 1.83<br>H<br>H  2.80 3.00 2.90<br>K M J  0.013 0.10  0.05<br>K1 K  0.903 1.10  1.00<br>D K1  -  -  0.400<br>J F G L ,, EEEE L  0.45 0.61  0.55<br>M  0.085 0.18 0.11<br>α  0°  8°  -<br>=e" === All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

|~~X~~<br>~~E~~<br>Y<br>C<br>Z<br>~~TE~~<br>~~Boje~~<br>~~ah~~|**Dimensions**<br>**Z**<br>**X**<br>**Y**<br>**C**<br>**E**||**Value (in mm)**<br>2.9<br>0.8<br>0.9<br>2.0<br>1.35|
|---|---|---|---|



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DNBT8105 Document number: DS30513 Rev. 10 - 2 

June 2011 © Diodes Incorporated 

**DNBT8105** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2011, Diodes Incorporated 

**www.diodes.com** 

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DNBT8105 Document number: DS30513 Rev. 10 - 2 

June 2011 © Diodes Incorporated