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DNA30E2200PA.
RECTIFIER, 2.2KV, 30A, TO-220
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: LITTELFUSE
- Product type: Standard Recovery Rectifier Diodes
- Repetitive Peak Reverse Voltage:2.2kV; Average Forward Current:30A; Diode Configuration:Single; Forward Voltage Max:1.26V; Reverse Recovery Time:-; Forward Surge Current 02AH9699
- No. of Pins: 2Pins
- Product Range: -
- Qualification: -
- Diode Case Style: TO-220
- Diode Configuration: Single
- Forward Voltage Max: 1.26V
- Forward Surge Current: 400A
- Reverse Recovery Time: -
- Average Forward Current: 30A
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 2.2kV
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.8 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **DNA30E2200PA** ## **High Voltage Standard Rectifier** **VRRM** _**=**_ **2200 V I FAV** _**=**_ **30 A VF** _**=**_ **1.24 V** ## Single Diode ## **Part number** ## **DNA30E2200PA** **==> picture [60 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> Backside: anode<br>**----- End of picture text -----**<br> **==> picture [126 x 12] intentionally omitted <==** **----- Start of picture text -----**<br> 1 3<br>**----- End of picture text -----**<br> ## **Features / Advantages:** - Planar passivated chips - Very low leakage current - Very low forward voltage drop **==> picture [74 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> Package: TO-220<br>**----- End of picture text -----**<br> ## **Applications:** - Diode for main rectification ● Industry standard outline - For single and three phase ● RoHS compliant bridge configurations ● Epoxy meets UL 94V-0 - Improved thermal behaviour ## **Disclaimer Notice** Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191129d © 2019 IXYS all rights reserved **DNA30E2200PA** |**Ratings**<br>**Rectifier**|**Ratings**<br>**Rectifier**|**Ratings**<br>**Rectifier**|**Ratings**<br>**Rectifier**|**Ratings**<br>**Rectifier**|**Ratings**<br>**Rectifier**| |---|---|---|---|---|---| |**Symbol**<br>**Definition**<br>**Conditions**||**min.**|**typ.**|**max.**|**Unit**| |**VRSM**<br>_max. non-repetitive reverse blocking voltage_<br>T = 25°C<br>VJ||||2300|V| |**VRRM**<br>_max. repetitive reverse blocking voltage_<br>T = 25°C<br>VJ||||2200|V| |**IR**<br>_reverse current_|V = V<br>R<br>T = 25°C<br>VJ<br>T = °C<br>VJ<br>V = V<br>R<br>2200<br>150<br>2200|||40<br>1.5|mA<br>µA| |**VF**<br>_forward voltage drop_|T = 25°C<br>VJ<br>I = A<br>F<br>30<br>I = A<br>F<br>60|||1.26<br>1.53|V<br>V| ||T = °C<br>VJ<br>I = A<br>F<br>30<br>I = A<br>F<br>60<br>150|||1.24<br>1.63|V<br>V| |**I**<br>**FAV**<br>_average forward current_|T = °C<br>C<br>140<br>T = °C<br>VJ<br>175<br>d =<br>rectangular<br>0.5|||30|A| |**VF0**<br>T = °C<br>VJ<br>175<br>**rF**<br>_threshold voltage_<br>_slope resistance_<br>_for power loss calculation only_||||0.83<br>13.4|V<br>mΩ| |**R**<br>_thermal resistance junction to case_<br>**thJC**||||0.7|K/W| |**R**<br>_thermal resistance case to heatsink_<br>**thCH**|||0.5||K/W| |**Ptot**<br>_total power dissipation_|T = 25°C<br>C|||210|W| |**IFSM**<br>_max. forward surge current_|t = 10 ms; (50 Hz), sine<br>T = 45°C<br>VJ<br>V = 0 V<br>R<br>t = 8,3 ms; (60 Hz), sine|||370<br>400|A<br>A| ||T = °C<br>VJ<br>150<br>V = 0 V<br>R<br>t = 10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine|||315<br>340|A<br>A| |**I²t**<br>_value for fusing_|T = 45°C<br>V = 0 V<br>t = 10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine<br>VJ<br>R|||685<br>665|A²s<br>A²s| ||T = °C<br>150<br>V = 0 V<br>t = 10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine<br>VJ<br>R|||495<br>480|A²s<br>A²s| |**CJ**<br>_junction capacitance_|V = V;<br>700<br>T = 25°C<br>f = 1 MHz<br>R<br>VJ||7||pF| **==> picture [307 x 253] intentionally omitted <==** IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191129d © 2019 IXYS all rights reserved **DNA30E2200PA** |**Ratings**<br>**Package**<br>**TO-220**|**Ratings**<br>**Package**<br>**TO-220**|**Ratings**<br>**Package**<br>**TO-220**|**Ratings**<br>**Package**<br>**TO-220**|**Ratings**<br>**Package**<br>**TO-220**| |---|---|---|---|---| |**Symbol**<br>**Definition**<br>**Conditions**|**min.**|**typ.**|**max.**|**Unit**| |**I RMS**<br>_RMS current_<br>per terminal|||35|A| |**TVJ**<br>_virtual junction temperature_|-55||175|°C| |**Top**<br>_operation temperature_|-55||150|°C| |**Tstg**<br>_storage temperature_|-55||150|°C| |**Weight**||2||g| |**M D**<br>_mounting torque_<br>**FC**<br>_mounting force with clip_|0.4||0.6|| ||20|||| **==> picture [191 x 145] intentionally omitted <==** **----- Start of picture text -----**<br> Product Marking<br>Part Number XXXXXX<br>Logo yywwZ<br>Date Code<br>Lot # 123456<br>Location<br>**----- End of picture text -----**<br> ## **Part description** - D = Diode N = High Voltage Standard Rectifier A = (>= 2000V) - 30 = Current Rating [A] E = Single Diode - 2200 = Reverse Voltage [V] PA = TO-220AC (2) |**Ordering**||**Ordering Number**|**Marking on Product**|**Marking on Product**|**Delivery Mode**|**Quantity**|**Code No.**| |---|---|---|---|---|---|---|---| |Standard||DNA30E2200PA|DNA30E2200PA||Tube|50|507762| ||||||||| |||**Similar Part**|**Package**|**Voltage class**|||| |||DNA30E2200PZ|TO-263AB(D2Pak) (2HV)|2200|||| |||DNA30EM2200PZ|TO-263AB(D2Pak) (2HV)|2200|||| |||DNA30E2200FE|i4-Pac(2HV)|2200|||| |||DNA30E2200IY|TO-262(2HV) (I2PAK)|2200|||| |**Equivalent Circuits for Simulation**<br>T =<br>VJ<br>°C<br>_* on die level_<br>175|**Equivalent Circuits for Simulation**<br>T =<br>VJ<br>°C<br>_* on die level_<br>175| |---|---| |I|V0<br>~~R~~0| IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191129d © 2019 IXYS all rights reserved **DNA30E2200PA** ## **Outlines TO-220** **==> picture [511 x 483] intentionally omitted <==** **----- Start of picture text -----**<br> |||||||| |---|---|---|---|---|---|---| |A|Dim.|Millimeter|Inches| |= supplier option| |Min.|Max.|Min.|Max.| |A1| |E| |A|4.32|4.82|0.170|0.190| |A1|1.14|1.39|0.045|0.055| |A2|2.29|2.79|0.090|0.110| |ØP| |4| |b|0.64|1.01|0.025|0.040| |b2|1.15|1.65|0.045|0.065| |C|0.35|0.56|0.014|0.022| |1|3|D|14.73|16.00|0.580|0.630| |E|9.91|10.66|0.390|0.420| |2x b2| |e|5.08|BSC|0.200|BSC| |H1|5.85|6.85|0.230|0.270| |L|12.70|13.97|0.500|0.550| |L1|2.79|5.84|0.110|0.230| |2x b| |C| |ØP|3.54|4.08|0.139|0.161| |e| |A2| |Q|2.54|3.18|0.100|0.125| **----- End of picture text -----**<br> **==> picture [509 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> 1 3<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191129d © 2019 IXYS all rights reserved **DNA30E2200PA** ## **Rectifier** **==> picture [508 x 660] intentionally omitted <==** **----- Start of picture text -----**<br> 60 300 10 [3]<br>V R = 0 V<br>TVJ = 45°C<br>40 250 TVJ = 45°C<br>IF IFSM I [2] t<br>[A] [A]<br>20 200 TVJ = 150°C [A [2] s] TVJ = 150°C<br>TVJ = 150°C<br>TVJ = 125°C<br>TVJ = 25°C 50 Hz, 80% VRRM<br>0 150 10 [2]<br>0.5 1.0 1.5 2.0 0.001 0.01 0.1 1 1 2 3 4 5 6 7 8 910<br>VF [V] t [s] t [ms]<br>Fig. 1 Forward current versus Fig. 2 Surge overload current Fig. 3 I [2] t versus time per diode<br>voltage drop per diode<br>50 40<br>R =<br>thKA<br>0.6 K/W<br>40 dc = 0.8 K/W<br>1 1.0 K/W 30<br>0.5 2.0 K/W<br>dc =<br>0.4 4.0 K/W<br>30 0.33 8.0 K/W IF(AV)M 1 0.5<br>0.17<br>Ptot 0.08 20 0.4<br>0.33<br>20 [A] 0.17<br>[W] 0.08<br>10<br>10<br>0 0<br>0 10 20 30 0 25 50 75 100 125 150 175 200 0 25 50 75 100 125 150 175 200<br>IF(AV)M [A] Tamb [[°C]] TC [°C]<br>Fig. 4 Power dissipation versus direct output current and ambient temperature Fig. 5 Max. forward current versus<br>case temperature<br>0.8<br>0.6<br>Constants for ZthJC calculation:<br>ZthJC i Rthi (K/W) ti (s)<br>0.4 1 0.03 0.0003<br>2 0.072 0.0065<br>[K/W ]<br>3 0.131 0.027<br>0.2 4 0.367 0.105<br>5 0.1 0.8<br>0.0<br>1 10 100 1000 10000<br>t [ms]<br>Fig. 6 Transient thermal impedance junction to case<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191129d © 2019 IXYS all rights reserved
Updated at April 22, 2026
Founded in 1927 and headquartered in Chicago, Illinois, Littelfuse is a premier global manufacturer of circuit protection, power control, and sensing technologies. Widely recognized for pioneering the first small, fast-acting protective fuse, the company has grown into an industry leader whose highly reliable components are essential to modern industrial, transportation, and consumer electronics applications worldwide. At the core of the Littelfuse portfolio is an expansive and industry-leading range of circuit protection solutions. This encompasses a massive selection of traditional fuses, fuse holders, and resettable PTC thermistor fuses designed to safely interrupt overcurrent conditions. To defend against electrical overstress, Littelfuse also provides advanced transient voltage suppression (TVS) technologies, including thousands of specialized TVS diodes, TVS varistors, and gas discharge tubes (GDTs) that ensure robust defense against voltage spikes and environmental hazards. Beyond its foundational protection components, Littelfuse manufactures a diverse array of discrete semiconductors, sensors, and switching devices. Engineers rely on their high-performance thyristors, including TRIACs and SCRs, alongside power-efficient Schottky diodes and MOSFETs for demanding power control applications. Complemented by precision proximity sensors and highly reliable reed and solid-state relays, Littelfuse delivers the critical building blocks required for secure, efficient, and complete system design.
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