DN3545N8-G

## **DN3545** 

## **N-Channel Depletion-Mode Vertical DMOS FET** 

## **Features** 

- High Input Impedance 

- Low Input Capacitance 

- Fast Switching Speeds 

- Low On-Resistance 

- Free from Secondary Breakdown 

- Low Input and Output Leakage 

## **Applications** 

- Normally-On Switches 

- Solid-State Relays 

- Converters 

- Linear Amplifiers 

- Constant-Current Sources 

## **General Description** 

The DN3545 Depletion-mode normally-on transistor uses an advanced vertical Diffusion Metal Oxide Semiconductor (DMOS) structure and a well-proven silicongate manufacturing process. This combination produces a device with the power-handling capabilities of bipolar transistors and the high-input impedance and positive-temperature coefficient inherent in MetalOxide Semiconductor (MOS) devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. 

Vertical DMOS Field-Effect Transistors (FETs) are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds are desired. 

- Power Supply Circuits 

- Telecommunications 

## **Package Types** 

**==> picture [377 x 144] intentionally omitted <==**

**----- Start of picture text -----**<br>
3-lead TO-92 3-lead SOT-89<br>(Top view) (Top view)<br>DRAIN<br>DRAIN<br>SOURCE SOURCE<br>DRAIN<br>GATE<br>GATE<br>See Table 3-1 and Table 3-2 for pin information.<br>**----- End of picture text -----**<br>


DS20005438A-page  1 

 2018 Microchip Technology Inc. 

**DN3545** 

## **1.0 ELECTRICAL CHARACTERISTICS** 

## **ABSOLUTE MAXIMUM RATINGS[†]** 

Drain-to-Source Voltage....................................................................................................................................... BVDSX Drain-to-Gate Voltage........................................................................................................................................... BVDGX Gate-to-Source Voltage..........................................................................................................................................  ±20V Operating Ambient Temperature, TA ..................................................................................................  –55°C to +150°C Storage Temperature, TS ....................................................................................................................  –55°C to +150°C 

**† Notice:** Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. 

## **DC ELECTRICAL CHARACTERISTICS** 

**Electrical Specifications:** TA = 25°C unless otherwise specified. All DC parameters are 100% tested at 25°C unless otherwise stated. Pulse test: 300 µs pulse, 2% duty cycle. 

|**DC ELECTRICAL CHARACTERISTICS**|**DC ELECTRICAL CHARACTERISTICS**|**DC ELECTRICAL CHARACTERISTICS**|**DC ELECTRICAL CHARACTERISTICS**|**DC ELECTRICAL CHARACTERISTICS**|**DC ELECTRICAL CHARACTERISTICS**|**DC ELECTRICAL CHARACTERISTICS**|
|---|---|---|---|---|---|---|
|**Electrical Specifications:**TA= 25°C unless otherwise specified. All DC parameters are 100% tested at 25°C unless<br>otherwise stated. Pulse test: 300µspulse, 2% dutycycle.|||||||
|**Parameter**|**Sym.**|**Min.**|**Typ.**|**Max.**|**Unit**|**Conditions**|
|Drain-to-Source Breakdown Voltage|BVDSX|450|—|—|V|VGS= –5V, ID= 100 µA|
|Gate-to-Source Off Voltage|VGS(OFF)|–1.5|—|–3.5|V|VDS= 25V, ID= 10 µA|
|VGS(OFF) Change with Temperature|∆VGS(OFF)|—|—|–4.5|mV/°C|VDS= 25V, ID= 10 µA (**Note 1**)|
|Gate Body Leakage Current|IGSS|—|—|100|nA|VGS= ±20V, VDS= 0V|
|Drain-to-Source Leakage Current|ID(OFF)|—|—|1|µA|VDS= Maximum rating,<br>VGS= –5V|
|||—|—|1|mA|VDS= 0.8 Maximum rating,<br>VGS= –5V, TA= 125°C (**Note 1**)|
|Saturated Drain-to-Source Current|IDSS|200|—|—|mA|VGS= 0V, VDS= 15V|
|Static Drain-to-Source On-State<br>Resistance|RDS(ON)|—|—|20|Ω|VGS= 0V, ID= 150 mA|
|Change in RDS(ON) with Temperature|∆RDS(ON)|—|—|1.1|%/°C|VGS= 0V, ID= 150 mA (**Note 1**)|



**Note 1:** Specification is obtained by characterization and is not 100% tested. 

## **AC ELECTRICAL CHARACTERISTICS** 

**Electrical Specifications:** Unless otherwise specified, for all specifications TA = 25°C. Specification is obtained by characterization and is not 100% tested. 

|**AC ELECTRICAL CHARACTERISTICS**|**AC ELECTRICAL CHARACTERISTICS**|**AC ELECTRICAL CHARACTERISTICS**|**AC ELECTRICAL CHARACTERISTICS**|**AC ELECTRICAL CHARACTERISTICS**|**AC ELECTRICAL CHARACTERISTICS**|**AC ELECTRICAL CHARACTERISTICS**|
|---|---|---|---|---|---|---|
|**Electrical Specifications:**Unless otherwise specified, for all specifications TA= 25°C. Specification is obtained by<br>characterization and is not 100% tested.|||||||
|**Parameter**|**Sym.**|**Min.**|**Typ.**|**Max.**|**Unit**|**Conditions**|
|Forward Transconductance|GFS|150|—|—|mmho|VDS= 10V, ID= 100 mA|
|Input Capacitance|CISS|—|—|360|pF|VGS= –5V,<br>VDS= 25V,<br>f = 1 MHz|
|Common Source Output Capacitance|COSS|—|—|40|pF||
|Reverse Transfer Capacitance|CRSS|—|—|15|pF||
|Turn-On DelayTime|td(ON)|—|—|20|ns|VDD= 25V,<br>ID= 150 mA,<br>RGEN= 25Ω,<br>VGS= 0V to –10V|
|Rise Time|tr|—|—|30|ns||
|Turn-Off DelayTime|td(OFF)|—|—|30|ns||
|Fall Time|tf|—|—|40|ns||
|**DIODE PARAMETER**|||||||
|Diode Forward Voltage Drop|VSD|—|—|1.8|V|VGS= –5V, ISD= 150 mA(**Note 1**)|
|Reverse RecoveryTime|trr|—|800|—|ns|VGS= –5V, ISD= 150 mA|



**Note 1:** All DC parameters are 100% tested at 25°C unless otherwise stated. Pulse test: 300 µs pulse, 2% duty cycle. 

DS20005438A-page  2 

 2018 Microchip Technology Inc. 

**DN3545** 

## **TEMPERATURE SPECIFICATIONS** 

|**TEMPERATURE SPECIFICATIONS**|**TEMPERATURE SPECIFICATIONS**|**TEMPERATURE SPECIFICATIONS**|**TEMPERATURE SPECIFICATIONS**|**TEMPERATURE SPECIFICATIONS**|**TEMPERATURE SPECIFICATIONS**|**TEMPERATURE SPECIFICATIONS**|
|---|---|---|---|---|---|---|
||||||||
|**Electrical Specifications:**Unless otherwise specified, for all specifications TA= TJ= +25°C.|||||||
|**Parameter**|**Sym.**|**Min.**|**Typ.**|**Max.**|**Unit**|**Conditions**|
|**TEMPERATURE RANGE**|||||||
|OperatingAmbient Temperature|TA|–55|—|150|°C||
|Storage Temperature|TS|–55|—|150|°C||
|**PACKAGE THERMAL RESISTANCE**|||||||
|3-lead TO-92|θJA|—|132|—|°C/W||
|3-lead SOT-89|θJA|—|133|—|°C/W||



## **THERMAL CHARACTERISTICS** 

|**Package**|**ID (Note 1)**<br>**Continuous**<br>**(mA)**|**ID**<br>**Pulsed**<br>**(mA)**|**Power**<br>**Dissipation**<br>**at TC = 25°C**<br>**(W)**|**IDR**<br> **(Note 1)**<br>**(mA)**|**IDRM**<br>**(mA)**|
|---|---|---|---|---|---|
|3-lead TO-92|136|1600|0.74|136|1600|
|3-lead SOT-89|200|300|1.6(**Note 2**)|200|300|



**Note 1:** ID continuous is limited by the maximum rated TJ. 

**2:** Mounted on an FR4 board, 25 mm x 25 mm x 1.57 mm 

DS20005438A-page  3 

 2018 Microchip Technology Inc. 

**DN3545** 

## **2.0 TYPICAL PERFORMANCE CURVES** 

**Note:** The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g. outside specified power supply range) and therefore outside the warranted range. 

**==> picture [468 x 167] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.7 VGS = +2.0V 0.6 VGS = +2V<br>+1.0V<br>0.6 1.0V 0V<br>0V 0.5<br>-0.5V<br>0.5 -0.5V<br>0.4<br>0.4<br>-0.8V<br>0.3<br>-0.8V<br>0.3<br>-1.0V<br>-1.0V 0.2<br>0.2<br>0.1 0.1<br>-1.5V -1.5V<br>0 0<br>0 50 100 150 200 250 300 350 400 450 0 2 4 6 8 10<br>VDS (volts) VDS (volts)<br>(amperes)ID  (amperes)ID<br>**----- End of picture text -----**<br>


**==> picture [216 x 177] intentionally omitted <==**

**----- Start of picture text -----**<br>
FIGURE 2-1:  Output Characteristics.<br>0.8<br>VDS = 10V<br>TA = -55 [O] C<br>0.6<br>TA = 25 [O] C<br>0.4<br>TA = 125 [O] C<br>0.2<br>0<br>0 0.1 0.2 0.3 0.4<br>ID (amperes)<br>(siemens)<br>FS<br>G<br>**----- End of picture text -----**<br>


_**FIGURE 2-2:** Transconductance vs. Drain Current._ 

**==> picture [216 x 193] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.0<br>TO-92 (Pulsed)<br>SOT-89 (DC) SOT-89 (Pulsed)<br>0.1 TO-92 (DC)<br>0.01<br>0.001 T A = 25 [O] C<br>1 10 100 1000<br>VDS (volts)<br>FIGURE 2-3: Maximum Rated Safe<br>Operating Area.<br>(amperes)<br>ID<br>**----- End of picture text -----**<br>


**==> picture [217 x 178] intentionally omitted <==**

**----- Start of picture text -----**<br>
FIGURE 2-4: Saturation Characteristics.<br>2.0<br>SOT-89<br>1.5<br>1.0<br>   TO-92<br>0.5<br>0<br>0 25 50 75 100 125 150<br>TA ( [O] C)<br>(watts)<br>D<br>P<br>**----- End of picture text -----**<br>


_**FIGURE 2-5:** Power Dissipation vs. Ambient Temperature._ 

**==> picture [216 x 192] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.0<br>SOT-89<br>TA = 25 [O] C<br>0.8<br>PD = 1.6W<br>0.6<br>0.4<br>0.2 TO-92<br>T C = 25 [O] C<br>P D = 1.0W<br>0<br>0.001 0.01 0.1 1 10<br>tP (seconds)<br>FIGURE 2-6: Thermal Response<br>Characteristics.<br>Thermal Resistance (normalized)<br>**----- End of picture text -----**<br>


DS20005438A-page  4 

 2018 Microchip Technology Inc. 

**DN3545** 

**==> picture [216 x 559] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.2<br>ID = 100µA<br>VGS = -5.0V<br>1.1<br>1.0<br>0.9<br>0.8<br>-50 0 50 100 150<br>Tj ( [O] C)<br>FIGURE 2-7: BVDSS Variation with<br>Temperature.<br>1.0<br>VDS = 10V<br>TA = -55 [O] C<br>0.8<br>0.6 TA = 25 [O] C<br>0.4<br>TA = 125 [O] C<br>0.2<br>0<br>-3 -2 -1 0 1 2<br>VGS (Volts)<br>FIGURE 2-8: Transfer Characteristics.<br>300<br>VGS = -5.0V<br>250<br>200<br>150<br>CISS<br>100<br>50<br>CRSS COSS<br>0<br>0 10 20 30 40<br>VDS (Volts)<br>(Normalized)<br>DSS<br>BV<br>(Amperes)<br>ID<br>C (picofarads)<br>**----- End of picture text -----**<br>


_**FIGURE 2-9:** Capacitance vs. Drain-toSource Voltage._ 

**==> picture [216 x 361] intentionally omitted <==**

**----- Start of picture text -----**<br>
50<br>VGS = 0V<br>40<br>30<br>20<br>10<br>0<br>0 0.2 0.4 0.6 0.8<br>ID  (Amperes)<br>FIGURE 2-10: On-Resistance vs. Drain<br>Current.<br>1.5 2.4<br>1.3 2.0<br>1.1 1.6<br>VGS(OFF) @ 10µA<br>0.9 1.2<br>0.7 0.8<br>RDS(ON) @ 0V, 150mA<br>0.5 0.4<br>-50 0 50 100 150<br>TJ  ( [O] C)<br>(ohms)<br>DS(ON)<br>R<br>(normalized) (normalized)<br>GS(OFF)  DS(ON)<br>V R<br>**----- End of picture text -----**<br>


_**FIGURE 2-10:** Current._ 

_**FIGURE 2-11:** V and R GS(th) DS(ON) Variation with Temperature._ 

**==> picture [158 x 158] intentionally omitted <==**

**----- Start of picture text -----**<br>
3<br>2 VID DS = 150mA= 30V<br>1<br>0<br>-1<br>-2<br>-3<br>-4<br>-5<br>0 1 2 3 4 5 6<br>QG (nanocoulombs)<br>(volts)<br>GS<br>V<br>**----- End of picture text -----**<br>


_**FIGURE 2-12:** Gate Drive Dynamic Characteristics._ 

DS20005438A-page  5 

 2018 Microchip Technology Inc. 

**DN3545** 

## **3.0 PIN DESCRIPTION** 

The details on the pins of 3-lead TO-92 and 3-lead SOT-89 packages are listed on Table 3-1 and Table 3-2, respectively. The locations of pins are indicated in **Package Types** . 

**TABLE 3-1: 3-LEAD TO-92 PIN FUNCTION TABLE** 

|**Pin Number**|**Pin Name**|**Description**|
|---|---|---|
|1|Source|Source|
|2|Gate|Gate|
|3|Drain|Drain|



## **TABLE 3-2: 3-LEAD SOT-89 PIN FUNCTION TABLE** 

|**Pin Number**|**Pin Name**|**Description**|
|---|---|---|
|1|Gate|Gate|
|2, 4|Drain|Drain|
|3|Source|Source|



DS20005438A-page  6 

 2018 Microchip Technology Inc. 

**DN3545** 

## **4.0 FUNCTIONAL DESCRIPTION** 

Figure 4-1 illustrates the switching waveforms and test circuit for DN3545. 

**==> picture [448 x 122] intentionally omitted <==**

**----- Start of picture text -----**<br>
0V 90% VDD<br>INPUT 10% GeneratorPulse RL<br>-10V OUTPUT<br>t t<br>(ON) (OFF) RGEN<br>td(ON) tr td(OFF) tf<br>VDD INPUT D.U.T.<br>10% 10%<br>OUTPUT<br>0V 90% 90%<br>**----- End of picture text -----**<br>


_**FIGURE 4-1:** Switching Waveforms and Test Circuit._ 

## **TABLE 4-1: PRODUCT SUMMARY** 

|**BVDSX/BVDGX**<br>**(V)**|**RDS(ON)**<br>**(Maximum)**<br>**(Ω)**|**IDSS**<br>**(Minimum)**<br>**(mA)**|
|---|---|---|
|450|20|200|



DS20005438A-page  7 

 2018 Microchip Technology Inc. 

**DN3545** 

## **5.0 PACKAGING INFORMATION** 

## **5.1 Package Marking Information** 

**==> picture [229 x 251] intentionally omitted <==**

**----- Start of picture text -----**<br>
3-lead TO-92 Example<br>XXXXXX DN3545<br>XX e3 N3 e3<br>YWWNNN 814687<br>3-lead TO-243AA Example<br>XXXXYWW DN5M813<br>NNN 343<br>**----- End of picture text -----**<br>


**Legend:** XX...X Product Code or Customer-specific information Y Year code (last digit of calendar year) YY Year code (last 2 digits of calendar year) WW Week code (week of January 1 is week ‘01’) NNN Alphanumeric traceability code e3 Pb-free JEDEC[®] designator for Matte Tin (Sn) ***** This package is Pb-free. The Pb-free JEDEC designator (     ) e3 can be found on the outer packaging for this package. 

**Note** : In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for product code or customer-specific information. Package may or not include the corporate logo. 

DS20005438A-page  8 

 2018 Microchip Technology Inc. 

**DN3545** 

Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging. 

DS20005438A-page  9 

 2018 Microchip Technology Inc. 

**DN3545** 

## **3-Lead TO-243AA (SOT-89) Package Outline (N8)** 

**==> picture [269 x 162] intentionally omitted <==**

**----- Start of picture text -----**<br>
D<br>D1 C<br>E H E1<br>1 2 3<br>L<br>b b1 A<br>e<br>e1<br>Top View Side View<br>**----- End of picture text -----**<br>


**Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.** 

**==> picture [411 x 56] intentionally omitted <==**

**----- Start of picture text -----**<br>
Symbol A b b1 C D D1 E E1 e e1 H L<br>MIN 1.40 0.44 0.36 0.35 4.40 1.62 2.29 2.00 [†] 3.94 0.73 [†]<br>Dimensions NOM - - - - - - - - 1.50 3.00 - -<br>(mm) BSC BSC<br>MAX 1.60 0.56 0.48 0.44 4.60 1.83 2.60 2.29 4.25 1.20<br>**----- End of picture text -----**<br>


_JEDEC Registration TO-243, Variation AA, Issue C, July 1986._ _**†** This dimension differs from the JEDEC drawing_ _**Drawings not to scale** ._ 

DS20005438A-page  10 

 2018 Microchip Technology Inc. 

**DN3545** 

## **APPENDIX A: REVISION HISTORY** 

## **Revision A (April 2018)** 

- Converted Supertex doc #DSFP-DN3545 to Microchip DS20005438A 

- Added sections to comply with the standard Microchip format 

- Changed the package marking format 

- Removed the 3-lead TO-92 N3 P002, P003, P005, P013 and P014 media types 

- Made minor text changes throughout the document 

DS20005438A-page  11 

 2018 Microchip Technology Inc. 

**DN3545** 

## **PRODUCT IDENTIFICATION SYSTEM** 

To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office. 

||**PART NO.**<br>|**PART NO.**<br>|**XX**|**XX**||**-X**<br> **-**|**X**||**Examples:**||
|---|---|---|---|---|---|---|---|---|---|---|
||**Device**<br> <br>|<br>|**Package**<br> <br>**Options**|||**Environmental**<br>|**Media Type**||a) DN3545N3-G:|N-Channel Depletion-Mode<br>Vertical DMOS FET, 3-lead|
|||||||||||TO-92, 1000/Bag|
||Device:|DN3545|||=|N-Channel Depletion-Mode Vertical DMOS FET|||b) DN3545N8-G:|N-Channel Depletion-Mode|
|||||||||||Vertical DMOS FET, 3-lead|
|||||||||||SOT-89, 2000/Reel|
||Packages:|N3|||=|3-lead TO-92|||||
|||N8|||=|3-lead SOT-89|||||
||Environmental:|G|||=|Lead (Pb)-free/RoHS-compliant Package|||||
||Media Types:|(blank)|||=|1000/Bag for an N3 Package|||||
|||(blank)|||=|2000/Reel for an N8 Package|||||
||||||||||||



DS20005438A-page  12 

 2018 Microchip Technology Inc. 

## **Note the following details of the code protection feature on Microchip devices:** 

- Microchip products meet the specification contained in their particular Microchip Data Sheet. 

- Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. 

- There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. 

- Microchip is willing to work with the customer who is concerned about the integrity of their code. 

- Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” 

Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. 

Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE **.** Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights unless otherwise stated. 

_Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC[®] MCUs and dsPIC[®] DSCs, KEELOQ[®] code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified._ 

## **QUALITY MANAGEMENT  SYSTEM** 

## **CERTIFIED BY DNV** 

## **Trademarks** 

The Microchip name and logo, the Microchip logo, AnyRate, AVR, AVR logo, AVR Freaks, BeaconThings, BitCloud, CryptoMemory, CryptoRF, dsPIC, FlashFlex, flexPWR, Heldo, JukeBlox, KEELOQ, KEELOQ logo, Kleer, LANCheck, LINK MD, maXStylus, maXTouch, MediaLB, megaAVR, MOST, MOST logo, MPLAB, OptoLyzer, PIC, picoPower, PICSTART, PIC32 logo, Prochip Designer, QTouch, RightTouch, SAM-BA, SpyNIC, SST, SST Logo, SuperFlash, tinyAVR, UNI/O, and XMEGA are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. 

ClockWorks, The Embedded Control Solutions Company, EtherSynch, Hyper Speed Control, HyperLight Load, IntelliMOS, mTouch, Precision Edge, and Quiet-Wire are registered trademarks of Microchip Technology Incorporated in the U.S.A. 

Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut, BodyCom, chipKIT, chipKIT logo, CodeGuard, CryptoAuthentication, CryptoCompanion, CryptoController, dsPICDEM, dsPICDEM.net, Dynamic Average Matching, DAM, ECAN, EtherGREEN, In-Circuit Serial Programming, ICSP, Inter-Chip Connectivity, JitterBlocker, KleerNet, KleerNet logo, Mindi, MiWi, motorBench, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach, Omniscient Code Generation, PICDEM, PICDEM.net, PICkit, PICtail, PureSilicon, QMatrix, RightTouch logo, REAL ICE, Ripple Blocker, SAM-ICE, Serial Quad I/O, SMART-I.S., SQI, SuperSwitcher, SuperSwitcher II, Total Endurance, TSHARC, USBCheck, VariSense, ViewSpan, WiperLock, Wireless DNA, and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. 

SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. 

Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries. 

GestIC is a registered trademark of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries. 

All other trademarks mentioned herein are property of their respective companies. 

- © 2018, Microchip Technology Incorporated, All Rights Reserved. ISBN: 978-1-5224-2936-4 

## == == **ISO/TS 16949** 

DS20005438A-page  13 

 2018 Microchip Technology Inc. 

## **Worldwide Sales and Service** 

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**China - Wuhan** Tel: 86-27-5980-5300 

**China - Xian** Tel: 86-29-8833-7252 

**China - Xiamen** Tel: 86-592-2388138 

**China - Zhuhai** Tel: 86-756-3210040 

## **ASIA/PACIFIC** 

**India - Bangalore** Tel: 91-80-3090-4444 **India - New Delhi** Tel: 91-11-4160-8631 

**India - Pune** Tel: 91-20-4121-0141 **Japan - Osaka** Tel: 81-6-6152-7160 

**Japan - Tokyo** Tel: 81-3-6880- 3770 

**Korea - Daegu** Tel: 82-53-744-4301 

**Korea - Seoul** Tel: 82-2-554-7200 

**Malaysia - Kuala Lumpur** Tel: 60-3-7651-7906 

**Malaysia - Penang** Tel: 60-4-227-8870 **Philippines - Manila** Tel: 63-2-634-9065 

**Singapore** Tel: 65-6334-8870 **Taiwan - Hsin Chu** Tel: 886-3-577-8366 

**Taiwan - Kaohsiung** Tel: 886-7-213-7830 

**Taiwan - Taipei** Tel: 886-2-2508-8600 

**Thailand - Bangkok** Tel: 66-2-694-1351 

**Vietnam - Ho Chi Minh** Tel: 84-28-5448-2100 

## **EUROPE** 

**Austria - Wels** Tel: 43-7242-2244-39 Fax: 43-7242-2244-393 

**Denmark - Copenhagen** Tel: 45-4450-2828 Fax: 45-4485-2829 

**Finland - Espoo** Tel: 358-9-4520-820 

**France - Paris** Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79 

**Germany - Garching** Tel: 49-8931-9700 

**Germany - Haan** Tel: 49-2129-3766400 **Germany - Heilbronn** Tel: 49-7131-67-3636 

**Germany - Karlsruhe** Tel: 49-721-625370 

**Germany - Munich** Tel: 49-89-627-144-0 Fax: 49-89-627-144-44 **Germany - Rosenheim** Tel: 49-8031-354-560 

**Israel - Ra’anana** Tel: 972-9-744-7705 

**Italy - Milan** Tel: 39-0331-742611 Fax: 39-0331-466781 

**Italy - Padova** Tel: 39-049-7625286 

**Netherlands - Drunen** Tel: 31-416-690399 Fax: 31-416-690340 

**Norway - Trondheim** Tel: 47-7289-7561 

**Poland - Warsaw** Tel: 48-22-3325737 

**Romania - Bucharest** Tel: 40-21-407-87-50 

**Spain - Madrid** Tel: 34-91-708-08-90 Fax: 34-91-708-08-91 

**Sweden - Gothenberg** Tel: 46-31-704-60-40 

**Sweden - Stockholm** Tel: 46-8-5090-4654 

**UK - Wokingham** Tel: 44-118-921-5800 

Fax: 44-118-921-5820 

DS20005438A-page  14 

 2018 Microchip Technology Inc. 

10/25/17