DN3545N3-G

Power MOSFET, N Channel, 450 V, 136 mA, 20 ohm, TO-92, Through Hole

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Manufacturer: MICROCHIP
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:136mA; Drain Source Voltage Vds:450V; On Resistance Rds(on):20ohm; Rds(on) Test Voltage Vgs:0V; Threshold Voltage Vgs:-; Pow
MSL: -
SVHC: No SVHC (04-Feb-2026)
No. of Pins: 3Pins
Channel Type: N Channel
Product Range: -
Qualification: -
Power Dissipation: 740mW
Transistor Mounting: Through Hole
Rds(on) Test Voltage: 0V
Transistor Case Style: TO-92
Drain Source Voltage Vds: 450V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 136mA
Drain Source On State Resistance: 20ohm
Gate Source Threshold Voltage Max: -

Delivery and price
Units per pack	1000
Price	0.51 €
Current stock	500+
Lead time	30 days

Datasheet

**DN3545** 

## _**Supertex inc.**_ **DN3545 N-Channel Depletion-Mode** ~~——~~ **Vertical DMOS FET Features General Description** ► High input  impedance These depletion-mode (normally-on) transistors utilize an 

These depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. 

- Low input capacitance 

- Fast switching speeds 

- Low on-resistance 

- Free from secondary breakdown 

- Low input and output leakage 

## **Applications** 

- Normally-on switches 

- Solid state relays 

- Converters 

- Linear amplifiers 

- Constant current sources 

Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. 

- Power supply circuits 

- Telecom 

**Ordering Information Product Summary Part Number Package Options Packing BVDSX/BVDGX RDS(ON) (max) IDSS (min)** SN3545N3-G TO-92 1000/Bag 450V 20Ω 200mA SN3545N3-G P002 TO-92 2000/Reel **Pin Configuration** SN3545N3-G P003 TO-92 2000/Reel SN3545N3-G P005 TO-92 2000/Reel **DRAIN** SN3545N3-G P013 TO-92 2000/Reel **DRAIN** SN3545N3-G P014 TO-92 2000/Reel **SOURCE SOURCE DRAIN** SN3545N8-G TO-243AA (SOT-89) 2000/Reel **GATE** ~~==S\e~~ **GATE** _-G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity._ **TO-92 TO-243AA (SOT-89)** _Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant. Refer to ‘P0xx’ Tape & Reel Specs for P002, P003, P005, P013, and P014 TO-92 Taping_ **Product Marking** _Specifications and Winding Styles_ 

**SiDN** YY = Year Sealed **Absolute Maximum Ratings 3 5 4 5** WW = Week Sealed **Parameter Value Y Y W W** = “Green” Packaging Drain-to-source voltage BVDSX _Package may or may not include the following marks: Si or_ **TO-92** Drain-to-gate voltage BVDGX W = Code for week sealed Gate-to-source voltage ±20V **DN5MW** = “Green” Packaging ~~———~~ Operating and storage temperature -55[O] C to +150[O] C ~~_~~ _Package may or may not include the following marks: Si or Absolute Maximum Ratings are those values beyond which damage to the device may_ **TO-243AA (SOT-89)** _occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground._ **Typical Thermal Resistance Package** _**θja**_ TO-92 132[O] C/W ~~——~~ TO-243AA (SOT-89) 133[O] C/W _Doc.# DSFP-DN3545_ _**Supertex inc.** C070113_ 

_**www.supertex.com**_ 

**DN3545** 

## **Thermal Characteristics** 

|**Package**|**ID**<br>**(continuous)****_†_**|**ID**<br>**(pulsed)**|**Power Dissipation**<br>**@TA = 25OC**|**IDR**<br>**_†_**|**IDRM**|
|---|---|---|---|---|---|
|T0-92(D-PAK)|136mA|1600mA|0.74W|136mA|1600mA|
|TO-243AA|200mA|300mA|1.6W**_‡_**|200mA|300mA|



_**Notes:**_ 

_† ID (continuous) is limited by max rated Tj._ 

_‡    Mounted on FR4 board, 25mm x 25mm x 1.57mm._ 

## **Electrical Characteristics** _(TA = 25[O] C unless otherwise specified)_ 

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Sym Parameter Min Typ Max Units Conditions<br>BVDSX Drain-to-source breakdown voltage 450 - - V VGS = -5.0V, ID = 100µA<br>VGS(OFF) Gate-to-source off voltage -1.5 - -3.5 V VDS = 25V, ID= 10µA<br>ΔVGS(OFF) Change in VGS(OFF) with temperature - - -4.5 mV/ [O] C VDS = 25V, ID= 10µA<br>IGSS Gate body leakage current - - 100 nA VGS = ± 20V, VDS = 0V<br>- - 1.0 µA VGS = -5.0V, VDS = Max Rating<br>ID(OFF) drain-to-source leakage current - - 1.0 mA VGS = -5.0V, VDS = 0.8Max Rating<br>T  = 125°C<br>A<br>IDSS Saturated drain-to-source current 200 - - mA VGS = 0V, VDS = 15V<br>RDS(ON) Static drain-to-source on-state resistance - - 20 Ω VGS = 0V, ID = 150mA<br>ΔRDS(ON) Change in RDS(ON) with temperature - - 1.1 %/ [O] C VGS = 0V, ID = 150mA<br>GFS Forward transductance 150 - - mmho  ID = 100mA, VDS = 10V<br>CISS Input capacitance - - 360<br>COSS Common source output capacitance - - 40 pF f = 1.0MHzVGS = -5.0V, VDS = 25V,<br>CRSS Reverse transfer capacitance - - 15<br>td(ON) Turn-on delay time  - - 20<br>tr Rise time - - 30 ns VDD = 25V, ID = 150mA,<br>td(OFF) Turn-off delay time - - 30 RGEN = 25Ω,VGS = 0V to -10V<br>t Fall time - - 40<br>f<br>VSD Diode forward voltage drop - - 1.8 V VGS = -5.0V, ISD = 150mA<br>trr Reverse recovery time - 800 - ns VGS = -5.0V, ISD = 150mA<br>**----- End of picture text -----**<br>


_**Notes:**_ 

_1. All D.C. parameters 100% tested at 25[O] C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)_ 

_2. All A.C. parameters sample tested._ 

## **Switching Waveforms and Test Circuit** 

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0V 90% VDD<br>INPUT Pulse R<br>10% Generator L<br>-10V OUTPUT<br>t t<br>(ON) (OFF) R<br>GEN<br>td(ON) tr td(OFF) tf<br>VDD INPUT D.U.T.<br>10% 10%<br>OUTPUT<br>0V 90% 90%<br>**----- End of picture text -----**<br>


_**Supertex inc.**_ 

_Doc.# DSFP-DN3545 C070113_ 

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_**www.supertex.com**_ 

**DN3545** 

## **Typical Performance Curves** 

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Output Characteristics<br>0.7  VGS = +2.0V<br>0.6  1.0V<br>0V<br>0.5<br>-0.5V<br>0.4<br>-0.8V<br>0.3<br>-1.0V<br>0.2<br>0.1<br>-1.5V<br>0<br>0  50  100  150  200  250  300  350  400  450<br>VDS (volts)<br>(amperes)<br>ID<br>**----- End of picture text -----**<br>


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Saturation Characteristics<br>**----- End of picture text -----**<br>


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0.6  VGS = +2V<br>+1.0V<br>0V<br>0.5<br>-0.5V<br>0.4<br>-0.8V<br>0.3<br>-1.0V<br>0.2<br>0.1<br>-1.5V<br>0<br>0  2  4  6  8  10<br>VDS (volts)<br>(amperes)<br>ID<br>**----- End of picture text -----**<br>


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Transconductance vs. Drain Current<br>**----- End of picture text -----**<br>


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Power Dissipation vs. Ambient Temperature<br>0.8  2.0<br>VDS = 10V<br>TO-243AA<br>TA = -55 [O] C<br>0.6  1.5<br>TA = 25 [O] C<br>0.4  1.0<br>TO-92<br>TA = 125 [O] C<br>0.2  0.5<br>0  0<br>0  0.1  0.2  0.3  0.4  0  25  50  75  100  125  150<br>ID (amperes) TA ( [O] C)<br>Maximum Rated Safe Operating Area Thermal Response Characteristics<br>1.0  1.0<br>TO-92 (Pulsed)<br>TO-243AA<br>TO-243AA (DC)  TO-243AA (Pulsed)  0.8  PD = 1.6WTA = 25 [O] C<br>0.1  TO-92 (DC)<br>0.6<br>0.4<br>0.01<br>0.2  TO-92<br>T C = 25 [O] C<br>0.001  T A = 25 [O] C 0  P D = 1.0W<br>1  10  100  1000  0.001  0.01  0.1  1  10<br>VDS (volts)  tP (seconds)<br>(watts)<br>(siemens) D<br>FS  P<br>G<br>(amperes)<br>ID<br>Thermal Resistance (normalized)<br>**----- End of picture text -----**<br>


_**Supertex inc.**_ 

_Doc.# DSFP-DN3545 C070113_ 

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_**www.supertex.com**_ 

**DN3545** 

## **Typical Performance Curves** _(cont.)_ 

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BVDSS Variation with Temperature<br>1.2<br>ID = 100µA<br>VGS = -5.0V<br>1.1<br>1.0<br>0.9<br>0.8<br>-50  0  50  100  150<br>Tj ( [O] C)<br>Transfer Characteristics<br>1.0<br>VDS = 10V<br>TA = -55 [O] C<br>0.8<br>0.6  TA = 25 [O] C<br>0.4<br>TA = 125 [O] C<br>0.2<br>0<br>-3  -2  -1  0  1  2<br>VGS (Volts)<br>(Normalized)<br>DSS<br>BV<br>(Amperes)<br>ID<br>**----- End of picture text -----**<br>


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Capacitance vs. Drain Source Voltage<br>300<br>VGS = -5.0V<br>250<br>200<br>150<br>CISS<br>100<br>50<br>COSS<br>CRSS<br>0<br>0  10  20  30  40<br>VDS (Volts)<br>C (picofarads)<br>**----- End of picture text -----**<br>


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On Resistance vs. Drain Current<br>50<br>VGS = 0V<br>40<br>30<br>20<br>10<br>0<br>0  0.2  0.4  0.6  0.8<br>ID  (Amperes)<br>VGS(OFF) and RDS(ON) w/ Temperature<br>1.5  2.4<br>1.3  2.0<br>1.1  1.6<br>VGS(OFF) @ 10µA<br>0.9  1.2<br>0.7  0.8<br>RDS(ON) @ 0V, 150mA<br>0.5  0.4<br>-50  0  50  100  150<br>TJ  ( [O] C)<br>(ohms)<br>DS(ON)<br>R<br>(normalized) (normalized)<br>GS(OFF)  DS(ON)<br>V R<br>**----- End of picture text -----**<br>


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Gate Drive Dynamic Characteristics<br>3<br>2  VID DS = 150mA = 30V<br>1<br>0<br>-1<br>-2<br>-3<br>-4<br>-5<br>0  1  2  3  4  5  6<br>QG (nanocoulombs)<br>(volts)<br>GS<br>V<br>**----- End of picture text -----**<br>


_**Supertex inc.**_ 

_Doc.# DSFP-DN3545 C070113_ 

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_**www.supertex.com**_ 

**DN3545** 

## **3-Lead TO-92 Package Outline (N3)** 

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D<br>A<br>Seating<br>Plane 1     2     3<br>L<br>b c<br>e1<br>e<br>**----- End of picture text -----**<br>


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Front View<br>E<br>E1<br>1 3<br>2<br>**----- End of picture text -----**<br>


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Side View<br>**----- End of picture text -----**<br>


**Bottom View** 

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Symbol A b c D E E1 e e1 L<br>MIN .170 .014 [†] .014 [†] .175 .125 .080 .095 .045 .500<br>Dimensions<br>NOM - - - - - - - - -<br>(inches)<br>MAX .210 .022 [†] .022 [†] .205 .165 .105 .105 .055 .610*<br>**----- End of picture text -----**<br>


_JEDEC Registration TO-92._ 

_* This dimension is not specified in the JEDEC drawing._ 

_† This dimension differs from the JEDEC drawing._ 

_**Drawings not to scale.**_ 

_**Supertex Doc.#:** DSPD-3TO92N3, Version E041009._ 

_**Supertex inc. www.supertex.com**_ 

_Doc.# DSFP-DN3545 C070113_ 

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**DN3545** 

## **3-Lead TO-243AA (SOT-89) Package Outline (N8)** 

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D<br>D1<br>E H<br>1  2  3<br>L<br>b  b1<br>e<br>e1<br>**----- End of picture text -----**<br>


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C<br>E1<br>A<br>**----- End of picture text -----**<br>


## **Top View** 

## **Side View** 

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Symbol A b b1 C D D1 E E1 e e1 H L<br>MIN 1.40 0.44 0.36 0.35 4.40 1.62 2.29 2.00 [†] 3.94 0.73 [†]<br>Dimensions 1.50 3.00<br>NOM - - - - - - - - - -<br>(mm) BSC BSC<br>MAX 1.60 0.56 0.48 0.44 4.60 1.83 2.60 2.29 4.25 1.20<br>**----- End of picture text -----**<br>


_JEDEC Registration TO-243, Variation AA, Issue C, July 1986._ _**†** This dimension differs from the JEDEC drawing_ _**Drawings not to scale** ._ 

_**Supertex Doc. #:** DSPD-3TO243AAN8, Version F111010._ 

_(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.)_ 

_**Supertex inc.**_ does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” _**Supertex inc.**_ does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the _**Supertex inc.**_ (website: http//www.supertex.com) 

> ©2013 _**Supertex inc.**_ All rights reserved. Unauthorized use or reproduction is prohibited. 

_**Supertex inc.**_ 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 _**www.supertex.com**_ 

_Doc.# DSFP-DN3545 C070113_ 

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Updated at April 29, 2026

Microchip Technology Inc. is a leading global provider of smart, connected, and secure embedded control solutions. Known for enabling engineers to design with confidence, the company delivers a comprehensive product portfolio that reduces total system costs and accelerates time to market across the industrial, automotive, communications, and computing sectors. Our extensive selection of Microchip components highlights the manufacturer's strength in both discrete semiconductors and advanced wireless connectivity. We carry a robust lineup of highly efficient single MOSFETs and Schottky diodes tailored for demanding power management and switching applications. Alongside these essential discretes, engineers can source a wide array of ready-to-use networking modules, prominently featuring Bluetooth and WLAN adapters that streamline the development of modern IoT and connected devices. Rounding out the offering is a diverse range of Microchip integrated circuits and specialized components. This includes versatile I/O expanders for simplified system integration, precision timing solutions such as MEMS oscillators and pulse generators, as well as AC/DC LED driver ICs and sub-2.4GHz RF transceivers. Backed by Microchip's renowned commitment to exceptional quality and reliable performance, these components provide scalable, dependable building blocks for complex electronic designs.

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