DN350T05-7

**DN350T05** TT 

**350V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR** 

## **Features** 

## **Mechanical Data** 

- BVCEO > 250V 

- IC = 0.5A Continuous Collector Current 

- Epitaxial Planar Die Construction 

- Complementary PNP Type Available (DP350T05) 

- Ideal for Medium Power Amplification and Switching 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. "Green" Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- Case: SOT23 

- Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Finish – Matte Tin Plated Leads; Solderable per MIL-STD-202, Method 208 

- Weight: 0.008 grams (Approximate) 

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C<br>SOT23<br>B<br>E<br>Top View<br>Top View  Device Symbol  Pin-Out<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|
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|**Product**|**Compliance**|**Marking**|**Reel size (inches)**|**Tape width (mm)**|**Quantity per reel**|
|DN350T05-7|AEC-Q101|K3S|7|8|3,000|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

   2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

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SOT23<br>a K3S = Product Type Marking Code<br>YM = Date Code Marking<br>Y = Year ex: E = 2017<br>M = Month ex: 9 = September<br>a a<br>Date Code Key<br>Year 2017 2018 2019 2020 2021 2022 2023 2024<br>ee Code E  F  G  H  I  J  K  L<br>Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec<br>Code 1  2  3  4  5  6  7  8  9  O  N  D<br>— ee ee ee ee ee eeeeeeee<br>DN350T05 1 of 5  October 2018<br>Document number  DS30625 Rev. 9 - 2 www.diodes.com  © Diodes Incorporated<br>**----- End of picture text -----**<br>


October 2018 © Diodes Incorporated 

**DN350T05** 

## **Absolute Maximum Ratings** (@TA = 25°C, unless otherwise specified.) 

|**Absolute Maximum Ratingsgss **(@TA = 25°C, unless otherwise specified.)A = 25°C, unless otherwise specified.)= 25°C, unless otherwise specified.)|(@TA = 25°C, unless otherwise specified.)A = 25°C, unless otherwise specified.)= 25°C, unless otherwise specified.)|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Collector-BaseVoltage|VCBO|350|V|
|Collector-Emitter Voltage|VCEO|350|V|
|Emitter-Base Voltage|VEBO|5.0|V|
|ContinuousBase Current|IB|25|mA|
|Continuous Collector Current|IC|500|mA|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Characteristic**|**Symbol**|**Value**|**Unit**|
|---|---|---|---|
|Power Dissipation  (Note 5)|PD|300|mW|
|Thermal Resistance,Junction to Ambient(Note 5)|RθJA|417|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-65 to +150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

**Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 6)** Collector-Base Breakdown Voltage V(BR)CBO 350  V IC = 100µA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 350  V IC = 1.0mA, IB = 0 ~~_——~~ Emitter-Base Breakdown Voltage V(BR)EBO 5.0  V IE = 10µA, IC = 0 Collector Cutoff Current ICBO  50 nA VCB = 250V, IE = 0 ~~—_———~~ Collector Cutoff Current IEBO  50 nA VCE = 5V, IC = 0 **ON CHARACTERISTICS (Note 6)** 20  IC = 1.0mA, VCE = 10V 30  IC = 10mA, VCE = 10V DC Current Gain hFE 30 200  IC = 30mA, VCE = 10V 20 200 IC = 50mA, VCE = 10V 15  IC = 100mA, VCE = 10V  0.30 IC = 10mA, IB = 1.0mA  0.35 IC = 20mA, IB = 2.0mA Collector-Emitter Saturation Voltage VCE(SAT)  0.50 V IC = 30mA, IB = 3.0mA ~~po~~  1.0 IC = 50mA, IB = 5.0mA  0.75 IC = 10mA, IB = 1.0mA Base-Emitter Saturation Voltage VBE(SAT)  0.80 V IC = 20mA, IB = 2.0mA  0.90 IC = 30mA, IB = 3.0mA Base-Emitter On Voltage VBE(ON)  2.0 V IC = 100mA, VCE = 10V ~~|~~ **SMALL SIGNAL CHARACTERISTICS** ~~jp~~ Output Capacitance Cobo  7.0 ~~ff~~ pF VCB = 20V, f = 1.0MHz, IE = 0 ~~a~~ Transition Frequency fT 50  MHz VCE = 10V, IC = 20mA Notes: 5. For a device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper; device is measured under still air conditions whilst operating in a steady-state. 

6.  Short duration pulse test used to minimize self-heating effect. 

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October 2018 © Diodes Incorporated 

DN350T05 Document number  DS30625 Rev. 9 - 2 

**www.diodes.com** 

**DN350T05** 

## ~~072, =)~~ 

## **Typical Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

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October 2018 © Diodes Incorporated 

DN350T05 Document number  DS30625 Rev. 9 - 2 

**www.diodes.com** 

**DN350T05** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**SOT23** 

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All 7°<br>H<br>GAUGE PLANE<br>0.25 SOT23<br>J Dim  Min  Max  Typ<br>K1 K<br>A  0.37  0.51  0.40<br>B  1.20  1.40  1.30<br>a C  2.30  2.50  2.40<br>A M D  0.89  1.03  0.915<br>L L1 F  0.45  0.60  0.535<br>| eh ae ——=—<br>G  1.78  2.05  1.83<br>ra === H  2.80  3.00  2.90<br>J  0.013  0.10  0.05<br>C B K  0.890  1.00  0.975<br>K1  0.903 1.10 1.025<br>ae ———<br>L  0.45 0.61  0.55<br>L1  0.25 0.55 0.40<br>= ————<br>M  0.085 0.150  0.110<br>D<br>a  0°  8°  --<br>F G All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**SOT23** 

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Y<br>Y1 ate C<br>Heth<br>Pood X X1<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value(in mm)**<br>2.0<br>0.8<br>1.35<br>0.9<br>2.9|
|---|---|
|**C**||
|**X**||
|**X1**||
|**Y**||
|**Y1**||



4 of 5 **www.diodes.com** 

October 2018 © Diodes Incorporated 

DN350T05 Document number  DS30625 Rev. 9 - 2 

**DN350T05** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

A.   Life support devices or systems are devices or systems which: 

1. are intended to implant into the body, or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2018, Diodes Incorporated 

**www.diodes.com** 

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October 2018 © Diodes Incorporated 

DN350T05 Document number  DS30625 Rev. 9 - 2