DN3135K1-G
Power MOSFET, N Channel, 350 V, 72 mA, 35 ohm, SOT-23, Surface Mount
- Manufacturer: MICROCHIP
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:72mA; Drain Source Voltage Vds:350V; On Resistance Rds(on):35ohm; Rds(on) Test Voltage Vgs:0V; Threshold Voltage Vgs:-; Pow
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (04-Feb-2026)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 360mW
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 0V
- Transistor Case Style: SOT-23
- Drain Source Voltage Vds: 350V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 72mA
- Drain Source On State Resistance: 35ohm
- Gate Source Threshold Voltage Max: -
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 0.396 € |
| Current stock | 1000+ |
| Lead time | 30 days |
## **DN3135** ## **N-Channel Depletion-Mode Vertical DMOS FET** ## **Features** - High Input Impedance - Low Input Capacitance - Fast Switching Speeds - Low On-resistance - Free from Secondary Breakdown - Low Input and Output Leakage ## **Applications** - Normally-on Switches - Solid State Relays - Converters - Linear Amplifiers - Constant-current Sources ## **General Description** The DN3135 is a low-threshold, Depletion-mode (normally-on) transistor that utilizes an advanced vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Microchip’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds are desired. - Power Supply Circuits - Telecommunications ## **Package Types** **==> picture [370 x 157] intentionally omitted <==** **----- Start of picture text -----**<br> SOT-23 (TO-236AB) SOT-89 (TO-243AA)<br>(Top view) (Top view)<br>DRAIN DRAIN<br>SOURCE SOURCE<br>DRAIN<br>GATE GATE<br>See Table 2-1 for pin information.<br>**----- End of picture text -----**<br> DS20005703A-page 1 2017 Microchip Technology Inc. **DN3135** ## **1.0 ELECTRICAL CHARACTERISTICS** ## **Absolute Maximum Ratings†** Drain-to-source Voltage........................................................................................................................................ BVDSX Drain-to-gate Voltage ........................................................................................................................................... BVDGX Gate-to-source Voltage ........................................................................................................................................... ±20V Operating Ambient Temperature, TA ................................................................................................... –55°C to +150°C Storage Temperature, TS...................................................................................................................... –55°C to +150°C **† Notice:** Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. ## **DC ELECTRICAL CHARACTERISTICS[ 1]** **Electrical Specifications:** Unless otherwise specified, for all specifications TA =TJ = +25°C. |**DC ELECTRICAL CHARACTERISTICS 1**|**DC ELECTRICAL CHARACTERISTICS 1**|**DC ELECTRICAL CHARACTERISTICS 1**|**DC ELECTRICAL CHARACTERISTICS 1**|**DC ELECTRICAL CHARACTERISTICS 1**|**DC ELECTRICAL CHARACTERISTICS 1**|**DC ELECTRICAL CHARACTERISTICS 1**| |---|---|---|---|---|---|---| |**Electrical Specifications:**Unless otherwise specified, for all specifications TA=TJ= +25°C.||||||| |**Parameter**|**Sym.**|**Min.**|**Typ.**|**Max.**|**Unit**|**Conditions**| |Drain-to-source Breakdown<br>Voltage|BVDSX|350|—|—|V|VGS= –5V, ID= 100 µA| |Gate-to-source Off Voltage|VGS(OFF)|–1.5|—|–3.5|V|VDS= 15V, ID= 10µA| |Change in VGS(OFF)with<br>Temperature|∆VGS(OFF)|—|—|–4.5|mV/°C|VDS= 15V, ID= 10 µA (**Note 2**)| |Gate BodyLeakage Current|IGSS|—|—|100|nA|VGS= ±20V, VDS= 0V| |Drain-to-source Leakage Current|ID(OFF)|—|—|1|µA|VDS= Max rating, VGS= –5V| |||—|—|1|mA|VDS= 0.8 Max Rating,<br>VGS= –5V, TA= 125°C(**Note 2**)| |Saturated Drain-to-source Current|IDSS|180|—|—|mA|VGS= 0V, VDS= 15V| |Static Drain-to-source On-state<br>Resistance|RDS(ON)|—|—|35|Ω|VGS= 0V, ID= 150 mA| |Change in RDS(ON)with<br>Temperature|∆RDS(ON)|—|—|1.1|%/°C|VGS= 0V, ID= 150 mA (**Note 2**)| **Note 1:** All DC parameters are 100% tested at 25°C unless otherwise stated. Pulse test: 300 µs pulse, 2% duty cycle. - **2:** Specification is obtained by characterization and is not 100% tested. DS20005703A-page 2 2017 Microchip Technology Inc. **DN3135** ## **AC ELECTRICAL CHARACTERISTICS[ 2]** |**AC ELECTRICAL CHARACTERISTICS 2**|**AC ELECTRICAL CHARACTERISTICS 2**|**AC ELECTRICAL CHARACTERISTICS 2**|**AC ELECTRICAL CHARACTERISTICS 2**|**AC ELECTRICAL CHARACTERISTICS 2**|**AC ELECTRICAL CHARACTERISTICS 2**|**AC ELECTRICAL CHARACTERISTICS 2**| |---|---|---|---|---|---|---| |||||||| |**Electrical Specifications:**Unless otherwise specified, for all specifications TA=TJ= +25°C.||||||| |**Parameter**|**Sym.**|**Min.**|**Typ.**|**Max.**|**Unit**|**Conditions**| |Forward Transconductance|GFS|140|—|—|mmho|VDS= 10V, ID= 100 mA| |Input Capacitance|CISS|—|60|120|pF|VGS= –5V,<br>VDS= 25V,<br>f = 1 MHz| |Common Source Output<br>Capacitance|COSS|—|6|15||| |Reverse Transfer Capacitance|CRSS|—|3|10||| |Turn-on DelayTime|td(ON)|—|—|10|ns|VDD= 25V,<br>ID= 150 mA,<br>RGEN= 25Ω,<br>VGS= 0V to –10V| |Rise Time|tr|—|—|15||| |Turn-off DelayTime|td(OFF)|—|—|15||| |Fall Time|tf|—|—|20||| |**DIODE PARAMETER**||||||| |Diode Forward Voltage Drop|VSD|—|—|1.8|V|VGS= –5V, ISD= 150 mA<br>(**Note 1**)| |Reverse Recovery Time|trr|—|800|—|ns|VGS= –5V, ISD= 150 mA<br>(**Note 2**)| **Note 1:** All DC parameters are 100% tested at 25°C unless otherwise stated. Pulse test: 300 µs pulse, 2% duty cycle. - **2:** Specification is obtained by characterization and is not 100% tested. ## **TEMPERATURE SPECIFICATIONS** |**Parameter**|**Sym.**|**Min.**|**Typ.**|**Max.**|**Unit**|**Conditions**| |---|---|---|---|---|---|---| |**TEMPERATURE RANGE**||||||| |OperatingAmbient Temperature|TA|–55|—|+150|°C|| |Storage Temperature|TS|–55|—|+150|°C|| |**PACKAGE THERMAL RESISTANCE**||||||| |SOT-23|JA|—|203|—|°C/W|| |SOT-89|JA|—|133|—|°C/W|| ## **THERMAL CHARACTERISTICS** |**Package**|**ID**<br>**( 1)**<br>**(Continuous)**<br>**(mA)**|**ID**<br>**(Pulsed)**<br>**(mA)**|**Power Dissipation at**<br>**TA = 25°C**<br>**(W)**|**IDR**<br>**( 1)**<br>**(mA)**|**IDRM**<br>**(mA)**| |---|---|---|---|---|---| |SOT-23|72|300|0.36|72|300| |SOT-89|135|300|1.3(**2**)|135|300| **Note 1:** ID (continuous) is limited by maximum TJ. **2:** Mounted on FR4 board, 25 mm x 25 mm x 1.57 mm DS20005703A-page 3 2017 Microchip Technology Inc. **DN3135** ## **2.0 PIN DESCRIPTION** Table 2-1 shows the description of pins in DN3135 SOT-23 and SOT-89. Refer to **Package Types** for the location of pins. **TABLE 2-1: PIN FUNCTION TABLE** |**SOT-23**<br>**Pin Number**|**SOT-89**<br>**Pin Number**|**Pin Name**|**Description**| |---|---|---|---| |1|1|Gate|Gate| |2|3|Source|Source| |3|2, 4|Drain|Drain| DS20005703A-page 4 2017 Microchip Technology Inc. **DN3135** ## **3.0 FUNCTIONAL DESCRIPTION** Figure 3-1 illustrates the switching waveforms and test circuit for DN3135. **==> picture [412 x 112] intentionally omitted <==** **----- Start of picture text -----**<br> 0V 90% VDD<br>INPUT 10% GeneratorPulse RL<br>-10V OUTPUT<br>t t<br>(ON) (OFF) RGEN<br>td(ON) tr td(OFF) tf<br>VDD INPUT D.U.T.<br>10% 10%<br>OUTPUT<br>0V 90% 90%<br>**----- End of picture text -----**<br> _**FIGURE 3-1:** Switching Waveforms and Test Circuit._ ## **PRODUCT SUMMARY** |**PRODUCT SUMMARY**||| |---|---|---| |**BVDSX/BVDGX**<br>**(V)**|**RDS(ON)**<br>**(Maximum)**<br>**(Ω)**|**IDSS**<br>**(Minimum)**<br>**(mA)**| |350|35|180| DS20005703A-page 5 2017 Microchip Technology Inc. **DN3135** ## **4.0 PACKAGING INFORMATION** ## **4.1 Package Marking Information** **==> picture [169 x 194] intentionally omitted <==** **----- Start of picture text -----**<br> 3-lead SOT-23 Example<br>XXXNNN N1S894<br>3-lead SOT-89 Example<br>XXXXYWW DN1S732<br>NNN 987<br>**----- End of picture text -----**<br> **Legend:** XX...X Product Code or Customer-specific information Y Year code (last digit of calendar year) YY Year code (last 2 digits of calendar year) WW Week code (week of January 1 is week ‘01’) NNN Alphanumeric traceability code e3 Pb-free JEDEC[®] designator for Matte Tin (Sn) ***** This package is Pb-free. The Pb-free JEDEC designator ( ) e3 can be found on the outer packaging for this package. **Note** : In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for product code or customer-specific information. Package may or not include the corporate logo. DS20005703A-page 6 2017 Microchip Technology Inc. **DN3135** ## **3-Lead TO-236AB (SOT-23) Package Outline (K1/T)** ## _**2.90x1.30mm body, 1.12mm height (max), 1.90mm pitch**_ **==> picture [361 x 243] intentionally omitted <==** **----- Start of picture text -----**<br> D<br>3<br>E1 E<br>0.25 Gauge<br>Plane<br>1 2 L Seating<br>Plane<br>L1<br>e b<br>e1<br>Top View View B<br>A View B<br>A2<br>A<br>Seating<br>Plane<br>A1<br>Side View A View A - A<br>**----- End of picture text -----**<br> **Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.** |**Symbol**|**Symbol**|**A**|**A1**|**A2**|**b**|**D**|**E**|**E1**|**e**|**e1**|**L**|**L1**|**�**| |---|---|---|---|---|---|---|---|---|---|---|---|---|---| |Dimension<br>(mm)|MIN|0.89|0.01|0.88|0.30|2.80|2.10|1.20|||0.20_†_||0O| ||NOM|-|-|0.95|-|2.90|-|1.30|0.9<br>BS|5<br>C<br>1.90<br>BSC|0.50|0.54<br>REF|-| ||MAX|1.12|0.10|1.02|0.50|3.04|2.64|1.40|||0.60||8O| |_JEDEC Registration TO-236, Variation AB, Issue H, Jan._<br>_† This dimension differs from the JEDEC drawing._<br>**_Drawings not to scale._**|||||_1999._||||||||| DS20005703A-page 7 2017 Microchip Technology Inc. **DN3135** ## **3-Lead TO-243AA (SOT-89) Package Outline (N8)** **==> picture [272 x 165] intentionally omitted <==** **----- Start of picture text -----**<br> D<br>D1 C<br>E H E1<br>1 2 3<br>L<br>b b1 A<br>e<br>e1<br>Top View Side View<br>**----- End of picture text -----**<br> **Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.** |**Symbol**|**Symbol**|**A**|**b**|**b1**|**C**|**D**|**D1**|**E**|**E1**|**e**|**e1**|**H**|**L**| |---|---|---|---|---|---|---|---|---|---|---|---|---|---| ||MIN|1.40|0.44|0.36|0.35|4.40|1.62|2.29|2.00**_†_**|||3.94|0.73**_†_**| |Dimensions<br>(mm)|NOM|-|-|-|-|-|-|-|-|1.50<br>BSC|3.00<br>BSC|-|-| ||MAX|1.60|0.56|0.48|0.44|4.60|1.83|2.60|2.29|||4.25|1.20| |_JEDEC Registration TO-243, Variation AA, Issue C, July 1986._<br>**_†_**_This dimension differs from the JEDEC drawing_<br>**_Drawings not to scale_**_._|||||||||||||| DS20005703A-page 8 2017 Microchip Technology Inc. **DN3135** ## **APPENDIX A: REVISION HISTORY** ## **Revision A (April 2017)** - Converted Supertex Doc# DSFP-DN3135 to Microchip DS20005703A - Changed the packaging format - Made minor text changes throughout the document DS20005703A-page 9 2017 Microchip Technology Inc. **DN3135** ## **PRODUCT IDENTIFICATION SYSTEM** To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office. ||**PART NO.**|**XX**|**XX**||**-X**<br> **-**|**X**||**Examples:**|| |---|---|---|---|---|---|---|---|---|---| ||**Device**<br> <br>|**Package**<br> <br>**Options**|||**Environmental**<br>|**Media Type**||a) DN3135K1-G:|N-Channel Depletion-Mode<br>Vertical DMOS FET, 3-lead SOT-23,| ||||||||||3000/Reel| ||Device:|DN3135||=|N-Channel Depletion-Mode|Vertical DMOS||b) DN3135N8-G:|N-Channel Depletion-Mode Vertical<br>DMOS FET, 3-lead SOT-89,| ||||||FET||||2000/Reel| ||Packages:|K1||=|3-lead SOT-23||||| |||N8||=|3-lead SOT-89||||| ||Environmental:|G||=|Lead (Pb)-free/RoHS-compliant Package||||| ||Media Type:|(blank)||=|3000/Reel for a K1 Package||||| ||||||2000/Reel for an N8 Package||||| ||||||||||| DS20005703A-page 10 2017 Microchip Technology Inc. ## **Note the following details of the code protection feature on Microchip devices:** - Microchip products meet the specification contained in their particular Microchip Data Sheet. - Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. - There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. - Microchip is willing to work with the customer who is concerned about the integrity of their code. - Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE **.** Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights unless otherwise stated. _Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC[®] MCUs and dsPIC[®] DSCs, KEELOQ[®] code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified._ ## **QUALITY MANAGEMENT SYSTEM** ## **CERTIFIED BY DNV** ## **Trademarks** The Microchip name and logo, the Microchip logo, AnyRate, AVR, AVR logo, AVR Freaks, BeaconThings, BitCloud, CryptoMemory, CryptoRF, dsPIC, FlashFlex, flexPWR, Heldo, JukeBlox, KEELOQ, KEELOQ logo, Kleer, LANCheck, LINK MD, maXStylus, maXTouch, MediaLB, megaAVR, MOST, MOST logo, MPLAB, OptoLyzer, PIC, picoPower, PICSTART, PIC32 logo, Prochip Designer, QTouch, RightTouch, SAM-BA, SpyNIC, SST, SST Logo, SuperFlash, tinyAVR, UNI/O, and XMEGA are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. ClockWorks, The Embedded Control Solutions Company, EtherSynch, Hyper Speed Control, HyperLight Load, IntelliMOS, mTouch, Precision Edge, and Quiet-Wire are registered trademarks of Microchip Technology Incorporated in the U.S.A. Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut, BodyCom, chipKIT, chipKIT logo, CodeGuard, CryptoAuthentication, CryptoCompanion, CryptoController, dsPICDEM, dsPICDEM.net, Dynamic Average Matching, DAM, ECAN, EtherGREEN, In-Circuit Serial Programming, ICSP, Inter-Chip Connectivity, JitterBlocker, KleerNet, KleerNet logo, Mindi, MiWi, motorBench, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach, Omniscient Code Generation, PICDEM, PICDEM.net, PICkit, PICtail, PureSilicon, QMatrix, RightTouch logo, REAL ICE, Ripple Blocker, SAM-ICE, Serial Quad I/O, SMART-I.S., SQI, SuperSwitcher, SuperSwitcher II, Total Endurance, TSHARC, USBCheck, VariSense, ViewSpan, WiperLock, Wireless DNA, and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries. GestIC is a registered trademark of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. - © 2017, Microchip Technology Incorporated, All Rights Reserved. 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Updated at April 29, 2026
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