DN2625K4-G

**N-Channel Depletion-Mode Vertical DMOS FET in Single and Dual Options** 

## **DN2625** 

## **Features** 

- Very Low Gate Threshold Voltage 

- Designed to be Source-driven 

- Low Switching Losses 

- Low Effective Output Capacitance 

- Designed for Inductive Loads 

## **Applications** 

- Medical Ultrasound Beamforming 

- Ultrasonic Array-focusing Transmitter 

- Piezoelectric Transducer Waveform Drivers 

- High-speed Arbitrary Waveform Generator 

- Normally-on Switches 

- Solid-state Relays 

- Constant Current Sources 

- Power Supply Circuits 

## **General Description** 

The DN2625 is a low-threshold Depletion-mode (normally-on) transistor that utilizes an advanced vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors as well as the high input impedance and positive temperature coefficient inherent in Metal-Oxide Semiconductor (MOS) devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. 

Vertical DMOS Field-Effect Transistors (FETs) are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance and fast switching speeds are desired. 

The DN2625DK6-G contains two MOSFETs in an 8-lead, dual-pad DFN package. The DN2625 contains a single MOSFET in a TO-252 D-PAK package. 

## **Package Types** 

**==> picture [374 x 143] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-252 D-PAK 8-lead DFN (Dual Pad)<br>(Top view) (Top view)<br>DRAIN<br>S1  1  8  D1<br>D1<br>G1  2  7  D1<br>S2  3  6  D2<br>D2<br>SOURCE G2  4  5  D2<br>GATE<br>See Table 3-1 and Table 3-2 for pin information.<br>**----- End of picture text -----**<br>


DS20005537B-page  1 

 2017 Microchip Technology Inc. 

**DN2625** 

## **1.0 ELECTRICAL CHARACTERISTICS** 

## **Absolute Maximum Ratings†** 

Drain-to-source Voltage ....................................................................................................................................... BVDSX Drain-to-gate Voltage .......................................................................................................................................... BVDGX Gate-to-source Voltage .........................................................................................................................................  ±20V Operating Ambient Temperature, TA ..................................................................................................... –55°C to 150°C Storage Temperature, TS ....................................................................................................................... –55°C to 150°C Soldering Temperature ( **Note 1** ) ........................................................................................................................... 300°C 

**† Notice:** Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. 

**Note 1:** Distance of 1.6 mm from case for 10 seconds 

## **DC ELECTRICAL CHARACTERISTICS** 

|**Electrical Specifications:**Unless otherwise noted, TA= 25°C.(**Note 1**)|**Electrical Specifications:**Unless otherwise noted, TA= 25°C.(**Note 1**)|**Electrical Specifications:**Unless otherwise noted, TA= 25°C.(**Note 1**)|**Electrical Specifications:**Unless otherwise noted, TA= 25°C.(**Note 1**)|**Electrical Specifications:**Unless otherwise noted, TA= 25°C.(**Note 1**)|**Electrical Specifications:**Unless otherwise noted, TA= 25°C.(**Note 1**)||
|---|---|---|---|---|---|---|
|**Parameter**|**Sym.**|**Min.**|**Typ.**|**Max.**|**Unit**|**Conditions**|
|Drain-to-source Breakdown Voltage|BVDSX|250|—|—|V|VGS= –2.5V, ID= 50µA|
|Drain-to-gate Breakdown Voltage|BVDGX|250|—|—|V|VGS= –2.5V, ID= 50µA|
|Gate-to-source Off Voltage|VGS(OFF)|–1.5|—|–2.1|V|VDS= 15V, ID= 100µA|
|Change in VGS(OFF)<br>with Temperature|∆VGS(OFF)|—|—|–4.5|mV/°C|VDS= 15V, ID= 100 µA (**Note 2**)|
|Gate BodyLeakage Current|IGSS|—|—|100|nA|VGS= ±20V, VDS= 0V|
|Drain-to-source Leakage Current|ID(OFF)|—|—|1|µA|VDS= 250V, VGS= –5V|
|||—|—|200||VDS= 250V, VGS= –5V,<br>TA= 125°C(**Note 2**)|
|Saturated Drain-to-source Current|IDSS|1.1|—|—|A|VGS= 0V, VDS= 15V|
|Pulsed Drain-to-source Current|IDS(PULSE)|3.1|3.3|—|A|VGS= 0.9V, VDS= 15V<br>(With dutycycle of 1%)|
|Static Drain-to-source On-resistance|RDS(ON)|—|—|3.5|Ω|VGS= 0V, ID= 1A|
|Change in RDS(ON)with<br>Temperature|∆RDS(ON)|—|—|1.1|%/°C|VGS= –0V, ID= 200 mA (**Note 2**)|



**Note 1:** Unless otherwise stated, all DC parameters are 100% tested at +25°C. Pulse test: 300 µs pulse, 2% duty cycle. 

- **2:** Specification is obtained by characterization and is not 100% tested. 

DS20005537B-page  2 

 2017 Microchip Technology Inc. 

**DN2625** 

## **AC ELECTRICAL CHARACTERISTICS** 

|**AC ELECTRICAL CHARACTERISTICS**|**AC ELECTRICAL CHARACTERISTICS**|**AC ELECTRICAL CHARACTERISTICS**|**AC ELECTRICAL CHARACTERISTICS**|**AC ELECTRICAL CHARACTERISTICS**|**AC ELECTRICAL CHARACTERISTICS**|**AC ELECTRICAL CHARACTERISTICS**|
|---|---|---|---|---|---|---|
||||||||
|**Electrical Specifications:**Unless otherwise noted, TA= 25°C.(**Note 2**)|||||||
|**Parameter**|**Sym.**|**Min.**|**Typ.**|**Max.**|**Unit**|**Conditions**|
|Forward Transconductance|GFS|100|—|—|mmh0|VDS= 10V, ID= 150 mA|
|Input Capacitance|CISS|—|800|1000|pF|VGS= –2.5V,<br>VDS= 25V,<br>f = 1 MHz|
|Common Source Output Capacitance|COSS|—|70|210|pF||
|Reverse Transfer Capacitance|CRSS|—|18|70|pF||
|Turn-on DelayTime|td(ON)|—|—|10|ns|VDD= 25V,<br>ID= 150 mA,<br>RGEN= 3Ω,<br>VGS= 0V to –10V|
|Rise Time|tr|—|—|20|ns||
|Turn-off DelayTime|td(OFF)|—|—|10|ns||
|Fall Time|tf|—|—|20|ns||
|Total Gate Charge|QG|—|—|7.04|nC|ID= 3.5A,<br>VDS= 100V,<br>VGS= 1.5V|
|Gate-to-source Charge|QGS|—|—|0.783|nC||
|Gate-to-drain Charge|QGD|—|—|3.73|nC||
|**DIODE PARAMETER**|||||||
|Diode Forward Voltage Drop|VSD|—|—|1.8|V|VGS= –2.5V, ISD= 150 mA<br>(**Note 1**)|



**Note 1:** Unless otherwise stated, all DC parameters are 100% tested at +25°C. Pulse test: 300 µs pulse, 2% duty cycle. 

- **2:** Specification is obtained by characterization and is not 100% tested. 

## **TEMPERATURE SPECIFICATIONS** 

|**TEMPERATURE SPECIFICATIONS**|**TEMPERATURE SPECIFICATIONS**|**TEMPERATURE SPECIFICATIONS**|**TEMPERATURE SPECIFICATIONS**|**TEMPERATURE SPECIFICATIONS**|**TEMPERATURE SPECIFICATIONS**|**TEMPERATURE SPECIFICATIONS**|
|---|---|---|---|---|---|---|
||||||||
|**Electrical Specifications:**Unless otherwise specified, for all specifications TA= TJ= +25°C.|||||||
|**Parameter**|**Sym.**|**Min.**|**Typ.**|**Max.**|**Unit**|**Conditions**|
|**TEMPERATURE RANGE**|||||||
|OperatingAmbient Temperature|TA|–55|—|150|°C||
|Storage Temperature|TS|–55|—|150|°C||
|SolderingTemperature|—|—|—|300|°C|**Note 1**|
|**PACKAGE THERMAL RESISTANCE**|||||||
|TO-252 D-PAK|θJA|—|81|—|°C/W|**Note 2**|
|8-lead DFN (Dual Pad)|θJA|—|29|—|°C/W|**Note 3**|



**Note 1:** Distance of 1.6 mm from case for 10 seconds 

- **2:** Four-layer, 1-oz, 3 x 4-inch PCB with 20 via for drain pad 

- **3:** Four-layer, 1-oz, 3 x 4-inch PCB with 12 via for drain pad 

## **THERMAL CHARACTERISTICS** 

|**Package**|**ID **<br>**( 1)**<br>**(Continuous)**<br>**(A)**|**ID**<br>**(Pulsed)**<br>**(A)**|**IDR**<br>**( 1)**<br>**(A)**|**IDRM**<br>**(A)**|
|---|---|---|---|---|
|TO-252 D-PAK|1.1|3.3|1.1|3.3|
|8-lead DFN(Dual Pad)|1.1|3.3|1.1|3.3|



**Note 1:** ID (Continuous) is limited by maximum TJ. 

DS20005537B-page  3 

 2017 Microchip Technology Inc. 

**DN2625** 

## **2.0 TYPICAL PERFORMANCE CURVES** 

**Note:** The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g. outside specified power supply range) and therefore outside the warranted range. 

**==> picture [210 x 158] intentionally omitted <==**

**----- Start of picture text -----**<br>
7.0<br>6.0<br>V GS  = 2.0V<br>5.0 V GS  = 1.5V<br>V GS = 1.0V<br>4.0 VGS = 0.5V<br>V GS  = 0V<br>VGS = -0.5V<br>3.0 V GS  = -1.0V<br>V GS  = -1.5V<br>2.0 V GS = -2.0V<br>1.0<br>0.0<br>0 50 100 150 200 250<br>VDS (volts)<br>(amps)<br>ID<br>**----- End of picture text -----**<br>


_**FIGURE 2-1:** Output  Characteristics._ 

**==> picture [211 x 163] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>-55 [O] C<br>9<br>8<br>7<br>25 [O] C<br>6<br>5 125 [O] C<br>4<br>3<br>2<br>1<br>0<br>-3.0 -2.0 -1.0 0.0 1.0 2.0 3.0 4.0<br>VGS (V)<br>(amps)<br>ID<br>**----- End of picture text -----**<br>


_**FIGURE 2-2:** Transfer Characteristics._ 

**==> picture [216 x 362] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.20<br>1.15<br>1.10<br>1.05<br>1.00 VID GS = 1mA= -2.5V<br>0.95<br>0.90<br>0.85<br>0.80<br>-50 -25 0 25 50 75 100 125 150<br>Tj ( [O] C)<br>FIGURE 2-4: BVDSX Variation with DSX Variation with  Variation with<br>Temperature.perature.erature.<br>5.0<br>4.5 VGS = 1V<br>4.0<br>3.5<br>3.0<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5<br>ID (A)<br>(normalized)<br>DSX<br>BV<br>(ohms)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


_**FIGURE 2-4:** BVDSX Variation with DSX Variation with  Variation with Temperature.perature.erature._ 

_**FIGURE 2-5:** On-resistance vs. Drain Current._ 

**==> picture [468 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.25 2.50<br>5.5<br>5.0 VVGSGS = -2V = -1.5V 1.20 2.25<br>4.5 VGS = -1V 1.15 2.00<br>VGS = -0.5V<br>4.0 V GS  = 0V 1.10 1.75<br>3.53.0 VVVGSGS GS  = 0.5V = 1V= 1.5V 1.05 VGS(OFF) V@DS 100µA= 15V 1.50<br>VGS = 2V 1.00 1.25<br>2.5<br>2.0 0.95 R DS(ON)  @V GS  = 1V 1.00<br>1.5 0.90 I D  =1A 0.75<br>1.0 0.85 0.50<br>0.5<br>0.80 0.25<br>0.0 -50      -25         0         25        50        75       100      125       150<br>0 1 2 3 4 5 6 7 8 9 10<br>VDS (V) Tj ( [O] C)<br>(A)<br>ID  (normalized)GS(OFF)  (normalized)DS(ON)<br>V R<br>**----- End of picture text -----**<br>


_**FIGURE 2-3:** Saturation Characteristics._ 

_**FIGURE 2-6:** V and R GS(OFF) DS(ON) Variation with Temperature._ 

DS20005537B-page  4 

 2017 Microchip Technology Inc. 

**DN2625** 

**==> picture [208 x 135] intentionally omitted <==**

**----- Start of picture text -----**<br>
4.0<br>3.5 VDS = 10V -55 [O] C<br>3.0<br>2.5<br>25 [O] C<br>2.0<br>1.5<br>1.0<br>125 [O] C<br>0.5<br>0.0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0<br>ID (A)<br>(Siemens)<br>FS<br>G<br>**----- End of picture text -----**<br>


_**FIGURE 2-7:** Transconductance vs. Drain Current._ 

DS20005537B-page  5 

 2017 Microchip Technology Inc. 

**DN2625** 

## **3.0 PIN DESCRIPTION** 

The details on the pins of TO-252 D-PAK and 8-lead DFN (dual pad) are listed in Table 3-1 and Table 3-2. Refer to **Package Types** for the location of pins. 

## **TABLE 3-1: TO-252 D-PAK PIN FUNCTION TABLE** 

|**Pin Number**|**Pin Name**|**Description**|
|---|---|---|
|1|Gate|Gate|
|2|Drain|Drain|
|3|Source|Source|
|4|Drain|Drain|



## **TABLE 3-2: 8-LEAD DFN (DUAL PAD) PIN FUNCTION TABLE** 

|**Pin Number**|**Pin Name**|**Description**|
|---|---|---|
|1|S1|Device 1 source|
|2|G1|Device 1gate|
|3|S2|Device 2 source|
|4|G2|Device 2gate|
|5|D2|Device 2 drain|
|6|D2|Device 2 drain|
|7|D1|Device 1 drain|
|8|D1|Device 1 drain|



DS20005537B-page  6 

 2017 Microchip Technology Inc. 

**DN2625** 

## **4.0 FUNCTIONAL DESCRIPTION** 

Figure 4-1 shows the switching waveforms and test circuit for DN2625. 

**==> picture [460 x 132] intentionally omitted <==**

**----- Start of picture text -----**<br>
0V 90% VDD<br>INPUT 10% GeneratorPulse RL<br>-10V OUTPUT<br>t t<br>(ON) (OFF) R<br>GEN<br>td(ON) tr td(OFF) tf<br>VDD INPUT D.U.T.<br>10% 10%<br>OUTPUT<br>0V 90% 90%<br>**----- End of picture text -----**<br>


_**FIGURE 4-1:** Switching Waveforms and Test Circuit._ 

## **PRODUCT SUMMARY** 

|**PRODUCT SUMMARY**|||
|---|---|---|
|**BVDSX/BVDGX**<br>**(V)**|**VGS(OFF)**<br>**(Maximum)**<br>**(V)**|**IDS (Pulsed)**<br>**(VGS = 0.9V)**<br>**(Minimum)**<br>**(A)**|
|250|–2.1|3.3|



DS20005537B-page  7 

 2017 Microchip Technology Inc. 

**DN2625** 

## **5.0 PACKAGING INFORMATION** 

## **5.1 Package Marking Information** 

**==> picture [419 x 147] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-252 (D-PAK)  Example 8-lead DFN  Example<br>XXXXXXX DN2625D<br>XXXX DN XXXXXXX K6<br>XXXXX e3 2625 e3 e3 YYWW e3 1613<br>YYWWNNN 1641343<br>NNN 343<br>**----- End of picture text -----**<br>


|**Legend:**|**Legend:**|XX...X|Product Code or Customer-specific information||
|---|---|---|---|---|
|||Y|Year code (last digit of calendar year)||
|||YY|Year code (last 2 digits of calendar year)||
|||WW|Week code (week of January 1 is week ‘01’)||
|||NNN|Alphanumeric traceability code||
|||3<br>e|Pb-free JEDEC®designator for Matte Tin (Sn)||
|||*****|This package is Pb-free. The Pb-free JEDEC designator (     )<br>can be found on the outer packaging for this package.<br>3<br>e||
|**Note**:|In|the event the full Microchip part number cannot be marked on one line, it will|||
||be carried||over to the next line, thus limiting the number of|available|
||characters||for product code or customer-specific information. Package may or||
||not include||the corporate logo.||



DS20005537B-page  8 

 2017 Microchip Technology Inc. 

**DN2625** 

Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging. 

DS20005537B-page  9 

 2017 Microchip Technology Inc. 

**DN2625** 

Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging. 

DS20005537B-page  10 

 2017 Microchip Technology Inc. 

**DN2625** 

## **APPENDIX A: REVISION HISTORY** 

## **Revision A (December 2016)** 

- Converted Supertex Document DSFP-DN2625 to Microchip DS20005537B 

- Removed obsolete package, 14-lead QFN 

- Changed the TO-252 D-PAK packaging quantity from 1000/Bag to 2000/Reel 

- Revised the Features section 

## **Revision B (May 2017)** 

- Corrected the 8L DFN Package Outline dimensions by changing it from 4 mm x 4 mm body/1 mm height/1 mm pitch to 5 mm x 5 mm body/0.9 mm height/1.27 mm pitch 

- Made minor text changes throughout the document 

DS20005537B-page  11 

 2017 Microchip Technology Inc. 

**DN2625** 

## **PRODUCT IDENTIFICATION SYSTEM** 

To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. 

|Devices:<br>DN2625<br>=    N-Channel Depletion-Mode<br>Vertical DMOS FET (Single Option)<br>DN2625D<br>=<br>N-Channel Depletion-Mode Vertical<br>DMOS FET (Dual Option)<br>Packages:<br>K4<br>=    TO-252 D-PAK<br>K6<br>=    8-lead DFN<br>Environmental:<br>G<br>=    Lead (Pb)-free/RoHS-compliant Package<br>Media Types:<br>(blank)<br>=    2000/Reel for a K4 Package<br>=    490/Tray for a K6 Package<br>**PART NO.**<br>**X**<br>**Device**<br>**X**<br>**Environmental**<br>**X**<br>**X**<br>**Package**<br>**Options**<br>**Media**<br>**-**<br>**-**<br>**Type**|**Examples:**<br>a)<br>DN2625K4-G:<br>N-Channel Depletion-Mode<br>Vertical DMOS FET (Single<br>Option), TO-252 D-PAK<br>Package, 2000/Reel<br>b)<br>DN2625DK6-G:<br>N-Channel Depletion-Mode<br>Vertical DMOS FET (Dual<br>Option), 8-lead DFN<br>Package, 490/Tray|
|---|---|



DS20005537B-page  12 

 2017 Microchip Technology Inc. 

## **Note the following details of the code protection feature on Microchip devices:** 

- Microchip products meet the specification contained in their particular Microchip Data Sheet. 

- Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. 

- There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. 

- Microchip is willing to work with the customer who is concerned about the integrity of their code. 

- Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” 

Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. 

Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE **.** Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights unless otherwise stated. 

_Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC[®] MCUs and dsPIC[®] DSCs, KEELOQ[®] code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified._ 

## **QUALITY MANAGEMENT  SYSTEM** 

## **CERTIFIED BY DNV** 

## **Trademarks** 

The Microchip name and logo, the Microchip logo, AnyRate, AVR, AVR logo, AVR Freaks, BeaconThings, BitCloud, CryptoMemory, CryptoRF, dsPIC, FlashFlex, flexPWR, Heldo, JukeBlox, KEELOQ, KEELOQ logo, Kleer, LANCheck, LINK MD, maXStylus, maXTouch, MediaLB, megaAVR, MOST, MOST logo, MPLAB, OptoLyzer, PIC, picoPower, PICSTART, PIC32 logo, Prochip Designer, QTouch, RightTouch, SAM-BA, SpyNIC, SST, SST Logo, SuperFlash, tinyAVR, UNI/O, and XMEGA are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. 

ClockWorks, The Embedded Control Solutions Company, EtherSynch, Hyper Speed Control, HyperLight Load, IntelliMOS, mTouch, Precision Edge, and Quiet-Wire are registered trademarks of Microchip Technology Incorporated in the U.S.A. 

Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut, BodyCom, chipKIT, chipKIT logo, CodeGuard, CryptoAuthentication, CryptoCompanion, CryptoController, dsPICDEM, dsPICDEM.net, Dynamic Average Matching, DAM, ECAN, EtherGREEN, In-Circuit Serial Programming, ICSP, Inter-Chip Connectivity, JitterBlocker, KleerNet, KleerNet logo, Mindi, MiWi, motorBench, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach, Omniscient Code Generation, PICDEM, PICDEM.net, PICkit, PICtail, PureSilicon, QMatrix, RightTouch logo, REAL ICE, Ripple Blocker, SAM-ICE, Serial Quad I/O, SMART-I.S., SQI, SuperSwitcher, SuperSwitcher II, Total Endurance, TSHARC, USBCheck, VariSense, ViewSpan, WiperLock, Wireless DNA, and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. 

SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. 

Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries. 

GestIC is a registered trademark of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries. 

All other trademarks mentioned herein are property of their respective companies. 

- © 2017, Microchip Technology Incorporated, All Rights Reserved. ISBN: 978-1-5224-1759-0 

## == == **ISO/TS 16949** 

DS20005537B-page  13 

 2017 Microchip Technology Inc. 

## **Worldwide Sales and Service** 

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**China - Chongqing** Tel: 86-23-8980-9588 Fax: 86-23-8980-9500 

**Japan - Tokyo** Tel: 81-3-6880- 3770 Fax: 81-3-6880-3771 

**China - Dongguan** Tel: 86-769-8702-9880 

**Korea - Daegu** Tel: 82-53-744-4301 Fax: 82-53-744-4302 

**China - Guangzhou** Tel: 86-20-8755-8029 

**China - Hangzhou** Tel: 86-571-8792-8115 Fax: 86-571-8792-8116 

**Korea - Seoul** Tel: 82-2-554-7200 Fax: 82-2-558-5932 or 82-2-558-5934 

**China - Hong Kong SAR** Tel: 852-2943-5100 Fax: 852-2401-3431 

**Malaysia - Kuala Lumpur** Tel: 60-3-6201-9857 Fax: 60-3-6201-9859 

**China - Nanjing** Tel: 86-25-8473-2460 Fax: 86-25-8473-2470 

**Malaysia - Penang** Tel: 60-4-227-8870 Fax: 60-4-227-4068 

**China - Qingdao** Tel: 86-532-8502-7355 Fax: 86-532-8502-7205 

**Philippines - Manila** Tel: 63-2-634-9065 Fax: 63-2-634-9069 

**China - Shanghai** Tel: 86-21-3326-8000 Fax: 86-21-3326-8021 

**Singapore** Tel: 65-6334-8870 Fax: 65-6334-8850 

**China - Shenyang** Tel: 86-24-2334-2829 Fax: 86-24-2334-2393 

**Taiwan - Hsin Chu** Tel: 886-3-5778-366 Fax: 886-3-5770-955 

**China - Shenzhen** Tel: 86-755-8864-2200 Fax: 86-755-8203-1760 

**Taiwan - Kaohsiung** Tel: 886-7-213-7830 

**China - Wuhan** Tel: 86-27-5980-5300 Fax: 86-27-5980-5118 

**Taiwan - Taipei** Tel: 886-2-2508-8600 Fax: 886-2-2508-0102 

**China - Xian Thailand - Bangkok** Tel: 86-29-8833-7252 Tel: 66-2-694-1351 Fax: 86-29-8833-7256 Fax: 66-2-694-1350 

**Thailand - Bangkok** Tel: 66-2-694-1351 

## **EUROPE** 

**Austria - Wels** Tel: 43-7242-2244-39 Fax: 43-7242-2244-393 

**Denmark - Copenhagen** Tel: 45-4450-2828 Fax: 45-4485-2829 

**Finland - Espoo** Tel: 358-9-4520-820 

**France - Paris** Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79 

**France - Saint Cloud** Tel: 33-1-30-60-70-00 

**Germany - Garching** Tel: 49-8931-9700 **Germany - Haan** Tel: 49-2129-3766400 

**Germany - Heilbronn** Tel: 49-7131-67-3636 

**Germany - Karlsruhe** Tel: 49-721-625370 

**Germany - Munich** Tel: 49-89-627-144-0 Fax: 49-89-627-144-44 

**Germany - Rosenheim** Tel: 49-8031-354-560 

**Israel - Ra’anana** Tel: 972-9-744-7705 

**Italy - Milan** Tel: 39-0331-742611 Fax: 39-0331-466781 

**Italy - Padova** Tel: 39-049-7625286 

**Netherlands - Drunen** Tel: 31-416-690399 Fax: 31-416-690340 

**Norway - Trondheim** Tel: 47-7289-7561 

**Poland - Warsaw** Tel: 48-22-3325737 

**Romania - Bucharest** Tel: 40-21-407-87-50 

**Spain - Madrid** Tel: 34-91-708-08-90 Fax: 34-91-708-08-91 

**Sweden - Gothenberg** Tel: 46-31-704-60-40 

**Sweden - Stockholm** Tel: 46-8-5090-4654 

**UK - Wokingham** Tel: 44-118-921-5800 

Fax: 44-118-921-5820 

DS20005537B-page  14 

 2017 Microchip Technology Inc. 11/07/16