Image not available
Illustrative purposes only
DMTH6016LSDQ-13
Dual MOSFET, N Channel, 60 V, 60 V, 7.6 A, 7.6 A, 0.0195 ohm
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: AEC-Q101
- Transistor Case Style: SOIC
- Operating Temperature Max: 175°C
- Power Dissipation N Channel: 1.9W
- Power Dissipation P Channel: 1.9W
- Drain Source Voltage Vds N Channel: 60V
- Drain Source Voltage Vds P Channel: 60V
- Continuous Drain Current Id N Channel: 7.6A
- Continuous Drain Current Id P Channel: 7.6A
- Drain Source On State Resistance N Channel: 0.0195ohm
- Drain Source On State Resistance P Channel: -
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.521 € |
| Current stock | 500+ |
| Lead time | 30 days |
Datasheet
**DMTH6016LSDQ 60V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET**
## **Product Summary**
|**BVDSS**<br>**RDS(ON) Max**<br>**ID Max**<br>**TA = +25°C**<br>60V<br>19.5mΩ@VGS= 10V<br>7.6A<br>28mΩ@VGS= 4.5V<br>6.2A|**BVDSS**<br>**RDS(ON) Max**<br>**ID Max**<br>**TA = +25°C**<br>60V<br>19.5mΩ@VGS= 10V<br>7.6A<br>28mΩ@VGS= 4.5V<br>6.2A|**BVDSS**<br>**RDS(ON) Max**<br>**ID Max**<br>**TA = +25°C**<br>60V<br>19.5mΩ@VGS= 10V<br>7.6A<br>28mΩ@VGS= 4.5V<br>6.2A|
|---|---|---|
|**BVDSS**|**RDS(ON) Max**|**ID Max**<br>**TA = +25°C**|
|60V|19.5mΩ@VGS= 10V|7.6A|
||28mΩ@VGS= 4.5V|6.2A|
## **Features and Benefits**
- Rated to +175°C – Ideal for High Ambient Temperature Environments
- 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application
- Low RDS(ON) – Minimizes On-State Losses
- Low Input Capacitance
- Fast Switching Speed
- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)**
- **Halogen and Antimony Free. “Green” Device (Note 3)**
- **Qualified to AEC-Q101 Standards for High Reliability**
- **PPAP Capable (Note 4)**
## **Description and Applications**
This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:
## **Mechanical Data**
- Case: SO-8
- Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Power Management
- DC-DC Converters
- Motor Control
- Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208
- Weight: 0.076 grams (Approximate)
**==> picture [22 x 7] intentionally omitted <==**
**----- Start of picture text -----**<br>
SO-8<br>**----- End of picture text -----**<br>
**==> picture [437 x 118] intentionally omitted <==**
**----- Start of picture text -----**<br>
S1 D1<br>D1 D2<br>Pin1<br>\ G1 D1<br>oS S2 D2 G1 G2<br>G2 D2<br>S1 S2<br>Top View Pin-Out Equivalent Circuit<br>Top View<br>**----- End of picture text -----**<br>
## **Ordering Information** (Note 5)
|**Part Number**|**Case**|**Packaging**|
|---|---|---|
|DMTH6016LSDQ-13|SO-8|2,500/Tape &Reel|
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
## **Marking Information**
**==> picture [287 x 91] intentionally omitted <==**
**----- Start of picture text -----**<br>
8 5<br>MOA<br> = Manufacturer’s Marking<br>H6016LD = Product Type Marking Code<br>N3016LSH6016LD YYWW = Date Code Marking<br>YY = Year (ex: 16 = 2016)<br>YY WW<br>WW = Week (01 to 53)<br>—_ ooo 1 4<br>**----- End of picture text -----**<br>
1 of 7 **www.diodes.com**
DMTH6016LSDQ Document number: DS38575 Rev. 2 - 2
January 2017 © Diodes Incorporated
**DMTH6016LSDQ**
## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.)
|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage||VDSS|60|V|
|Gate-Source Voltage||VGSS|±20|V|
|Continuous Drain Current (Note 7) VGS= 10V|TA= +25°C<br>TA= +100°C|ID|7.6<br>5.4|A|
|Continuous Drain Current (Note 7) VGS= 4.5V|TA= +25°C<br>TA= +100°C|ID|6.2<br>4.4|A|
|Pulsed Drain Current(10μs Pulse,DutyCycle = 1%)||IDM|40|A|
|Maximum Continuous BodyDiode Forward Current(Note 7)||IS|1.7|A|
|Pulsed BodyDiode Forward Current(10μs Pulse,DutyCycle = 1%)||ISM|40|A|
|Avalanche Current,L = 0.1mH||IAS|15.3|A|
|Avalanche Energy,L = 0.1mH||EAS|11.7|mJ|
## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)
|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 6)|PD|1.4|W|
|Thermal Resistance,Junction to Ambient(Note 6)|RθJA|102|°C/W|
|Total Power Dissipation(Note 7)|PD|1.9|W|
|Thermal Resistance,Junction to Ambient(Note 7)|RθJA|78|°C/W|
|Thermal Resistance,Junction to Case|RθJC|14.5|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +175|°C|
**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)
|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~————~~|**Symbol**<br>~~————~~|**Min**<br>~~————~~|**Typ **<br>~~————~~|**Max**<br>~~————~~|**Unit**<br>~~————~~|**Test Condition**<br>~~————~~|
|**OFF CHARACTERISTICS**(Note 8) <br>~~————~~|||||||
|Drain-Source Breakdown Voltage<br>~~————~~|BVDSS<br>~~————~~|60<br>~~————~~|—<br>~~————~~|—<br>~~————~~|V<br>~~————~~|VGS= 0V,ID= 250µA<br>~~————~~|
|Zero Gate Voltage Drain Current<br>~~————~~|IDSS<br>~~————~~|—<br>~~————~~|—<br>~~————~~|1<br>~~————~~|µA<br>~~————~~|VDS= 48V,VGS= 0V<br>~~————~~|
|Gate-Source Leakage<br>~~————~~<br>~~EE~~|IGSS<br>~~————~~<br>~~EE ———~~|—<br>~~————~~<br>~~———~~|—<br>~~————~~<br>~~———~~|±100<br>~~————~~<br>~~———~~|nA<br>~~————~~|VGS=20V,VDS= 0V<br>~~————~~<br>~~ee~~|
|**ON CHARACTERISTICS**(Note 8) <br>~~EE ———~~<br>~~ee~~|||||||
|Gate Threshold Voltage<br>~~EE~~|VGS(TH)<br>~~EE ———~~|1<br>~~———~~|—<br>~~———~~|2.5<br>~~———~~|V|VDS= VGS,ID= 250µA<br>~~ee~~|
|Static Drain-Source On-Resistance<br>~~EE~~|RDS(ON)<br>~~EE ———~~|—<br>~~———~~|15<br>~~———~~|19.5<br>~~———~~|mΩ|VGS= 10V,ID= 10A<br>~~ee~~|
|||—<br>~~———~~|21<br>~~———~~|28<br>~~———~~||VGS= 4.5V,ID= 6A<br>~~ee~~|
|Diode Forward Voltage<br>~~EE~~|VSD<br>~~EE ———~~|—<br>~~———~~|0.7<br>~~———~~|1.2<br>~~———~~|V|VGS= 0V,IS= 1A<br>~~ee~~|
|**DYNAMIC CHARACTERISTICS**(Note 9)<br>~~a~~<br>~~—————~~|||||||
|Input Capacitance<br>~~———~~<br>~~—————~~|Ciss<br>~~———~~|—<br>~~———~~<br>~~a~~|864<br>~~———~~<br>~~a~~|—<br>~~———~~<br>~~a~~|pF<br>~~———~~<br>~~a~~|VDS= 30V, VGS= 0V,<br>f = 1MHz<br>~~———~~|
|Output Capacitance<br>~~———~~<br>~~—————~~|Coss<br>~~———~~|—<br>~~———~~<br>~~a~~|282<br>~~———~~<br>~~a~~|—<br>~~———~~<br>~~a~~|||
|Reverse Transfer Capacitance<br>~~———~~<br>~~—————~~|Crss<br>~~———~~|—<br>~~———~~<br>~~a~~|27<br>~~———~~<br>~~a~~|—<br>~~———~~<br>~~a~~|||
|Gate Resistance<br>~~———~~<br>~~—————~~<br>~~—————~~|Rg<br>~~———~~|—<br>~~———~~<br>~~a~~|1.3<br>~~———~~<br>~~a~~|—<br>~~———~~<br>~~a~~<br>~~eee~~|Ω<br>~~———~~<br>~~a~~<br>~~eee~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~———~~<br>~~eee~~|
|Total Gate Charge(VGS= 4.5V)<br>~~—————~~<br>~~—————~~|Qg|—<br>~~a~~|8.4<br>~~a~~|—<br>~~a~~<br>~~eee~~|nC<br>~~a~~<br>~~eee~~<br>~~ee~~|VDS= 30V, ID= 10A<br>~~eee~~<br>~~ee~~|
|Total Gate Charge(VGS= 10V)<br>~~—————~~<br>~~—————~~|Qg|—<br>~~a~~|17<br>~~a~~|—<br>~~a~~<br>~~eee~~|||
|Gate-Source Charge<br>~~—————~~<br>~~—————~~|Qgs|—<br>~~a~~|3.1<br>~~a~~|—<br>~~a~~<br>~~eee~~|||
|Gate-Drain Charge<br>~~—————~~<br>~~—————~~|Qgd|—<br>~~a~~|4.3<br>~~a~~|—<br>~~a~~<br>~~eee~~<br>~~ee~~|||
|Turn-On DelayTime<br>~~—————~~<br>~~—————~~|tD(ON)|—<br>~~a~~|3.4<br>~~a~~|—<br>~~a~~<br>~~eee~~<br>~~ee~~|ns<br>~~a~~<br>~~eee~~<br>~~ee~~<br>~~EE~~|VGS= 10V, VDS= 30V,<br>Rg= 6Ω, ID= 10A<br>~~eee~~<br>~~ee~~|
|Turn-On Rise Time<br>~~—————~~<br>~~—————~~|tR|—<br>~~a~~|5.2<br>~~a~~|—<br>~~a~~<br>~~eee~~<br>~~ee~~|||
|Turn-Off DelayTime<br>~~—————~~|tD(OFF)|—|13|—<br>~~eee~~<br>~~ee~~|||
|Turn-Off Fall Time<br>~~—————~~|tF|—|7|—<br>~~eee~~<br>~~ee~~<br>~~EE~~|||
|Reverse RecoveryTime<br>~~—————~~<br>~~eee~~|tRR<br>~~eee~~|—<br>~~eee~~|22<br>~~eee~~|—<br>~~eee~~<br>~~ee~~<br>~~eee~~<br>~~EE~~|ns<br>~~eee~~<br>~~ee~~<br>~~eee~~<br>~~EE~~|IF= 10A, di/dt = 100A/µs<br>~~eee~~<br>~~ee~~<br>~~eee~~|
|Reverse RecoveryCharge<br>~~eee~~|QRR<br>~~eee~~|—<br>~~eee~~|11<br>~~eee~~|—<br>~~eee~~<br>~~EE~~|nC<br>~~eee~~<br>~~EE~~||
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
2 of 7 **www.diodes.com**
DMTH6016LSDQ Document number: DS38575 Rev. 2 - 2
January 2017 © Diodes Incorporated
**DMTH6016LSDQ**
**==> picture [503 x 679] intentionally omitted <==**
**----- Start of picture text -----**<br>
30.0 30<br>VGS = 4.0V VDS = 5.0V<br>25.0 | Re e 25 e ee<br>VGS = 3.5V<br>20.0 20<br>1 can e<br>VGS = 4.5V<br>15.0 VGS = 10 V 15<br>VGS = 3.0V<br>10.0 | arenas 10 a aa<br>foo — 175 [o] C<br>85 [o] C<br>150 [o] C<br>5.0 5<br>25 [o] C<br>VGS = 2.5V 125 [o] C<br>-55 [o] C<br>0.0 PTf TLe 0 yf,‘a<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 1 2 3 4 5<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic Figure 2. Typical Transfer Characteristic<br>25.00 50<br>45<br>ID = 10A<br>22.00 VGS = 4.5V 40 He E EE<br>35 W o<br>19.00 16.00 302520 PoPVeNO| | | | ye tf<br>VGS = 10V 15<br>13.00 10 — ID = 6A —<br>10.00 50 | REET | | | | | tf ff<br>0 5 10 15 20 25 30 2 4 6 8 10 12 14 16 18 20<br>ID, DRAIN-SOURCE CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3. Typical On-Resistance vs. Drain Current and Figure 4. Typical Transfer Characteristic<br>Gate Voltage<br>0.03 2<br>VGS = 10V<br>1.8 VGS = 4.5V, ID = 6A<br>0.025<br>t ey a e 1.6 pT an »<br>175 [o] C 150 [o] C 125 [o] C<br>1.4<br>0.02 — PP<br>85 [o] C<br>1.2<br>0.015 Trt Ta<br>25 [o] C 1<br>VGS = 10V, ID = 10A<br>S SS 0.8 p ew<br>-55 [o] C<br>0.01<br>——— 0.6 M et<br>0.005 Sooeen 0.4 CEPECECE<br>0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150 175<br>ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 5. Typical On-Resistance vs. Drain Current and Figure 6. On-Resistance Variation with Temperature<br>Temperature<br>, DRAIN CURRENT (A)<br>ID , DRAIN CURRENT (A)ID<br>)<br> )<br>(m <br>(m<br>, DRAIN-SOURCE ON-RESISTANCE<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R DS(ON)<br>R<br>)<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>
3 of 7 **www.diodes.com**
DMTH6016LSDQ Document number: DS38575 Rev. 2 - 2
January 2017 © Diodes Incorporated
**DMTH6016LSDQ** ~~[~~
**==> picture [498 x 669] intentionally omitted <==**
**----- Start of picture text -----**<br>
0.04 3<br>0.035<br>2.5<br>titi ttt TTT iy<br>0.03 VGS = 4.5V, ID = 6A<br>2<br>0.025 to e = ID = 1mA<br>0.02 1.5<br>eae n= Oe<br>0.015<br>er VGS = 10V, ID = 10A 1 TT ID = 250µA PRS<br>0.01<br>a ne 0.5 a: SS<br>0.005 CCPL ~<br>0 PEE 0 EERE<br>-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175<br>TJ, JUNCTION TEMPERATURE ( ℃ ) TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 7. On-Resistance Variation with Temperature Figure 8. Gate Threshold Variation vs. Junction<br>Temperature<br>30 10000<br>VGS = 0V f = 1MHz<br>25 Ciss<br>eee || nee 1000 ==<br>20 e e<br>100 Coss<br>15 an || ina ——S ——S— — —<br>10<br>10 TA = 175 [o] C {| Crss<br>Af S S S<br>TA = 150 [o] C<br>TA = 85 [o] C 1<br>5<br>TA = 125 [o] C / TA = 25 [o] C ene<br>TA = -55 [o] C<br>0 LLL) 0 ——<br>0 0.3 0.6 0.9 1.2 1.5 0 10 20 30 40 50 60<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current Figure 10. Typical Junction Capacitance<br>10<br>100<br>/ a RDS(ON) Limited ——==== PW =100µs H<br>8<br>10<br>6<br>1<br>PW =1ms<br>PW =10ms<br>4 0.1<br>PW =100ms<br>VDS = 30V, ID = 10A TJ(Max) = 175 ℃ PW =1s<br>2 0.01 TC = 25 ℃ PW<br>Single Pulse DC<br>DUT on 1*MRP Board<br>0 0.001 VGS= 10V<br>0 2 4 6 8 10 12 14 16 18 0.1 1 10 100<br>Qg (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11. Gate Charge Figure 12. SOA, Safe Operation Area<br>)<br>, GATE THRESHOLD VOLTAGE (V)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>GS(TH)<br>DS(ON) V<br>R<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>
4 of 7 **www.diodes.com**
DMTH6016LSDQ Document number: DS38575 Rev. 2 - 2
January 2017
© Diodes Incorporated
**DMTH6016LSDQ**
**==> picture [401 x 280] intentionally omitted <==**
**----- Start of picture text -----**<br>
1<br>a —— — D=0.9<br>TT<br>D=0.7<br>D=0.5<br>R TH al<br>ST mH REI<br>D=0.3 BK<br>0.1 ST geet LLL EAN<br>D=0.1<br>BRE[|TarHHfea ot<br>rn|| AgiTT<br>FEAT D=0.05 CTT<br>7 A<br>E09 A<br>D=0.02<br>0.01 esecau MALAL LUM| LLIN L ULLMM LUNELAM ELUCM M LETTECMLL<br>Peet ANE I TTI<br>| | | TNS D=0.01 PPTTTT<br>D=0.005 RθJA (t) = r(t) * RθJA<br>CER CEE RθJA = 103 ℃ /W l<br>Duty Cycle, D = t1/t2<br>D=Single Pulse<br>0.001<br>1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>
5 of 7 **www.diodes.com**
DMTH6016LSDQ Document number: DS38575 Rev. 2 - 2
January 2017 © Diodes Incorporated
**DMTH6016LSDQ**
## **Package Outline Dimensions**
Please see http://www.diodes.com/package-outlines.html for the latest version.
**==> picture [426 x 205] intentionally omitted <==**
**----- Start of picture text -----**<br>
SO-8<br>SO-8<br>Dim Min Max Typ<br>E ——— A 1.40 1.50 1.45<br>A1 0.10 0.20 0.15<br>1 b 0.30 0.50 0.40<br>c 0.15 0.25 0.20<br>D 4.85 4.95 4.90<br>E 5.90 6.10 6.00<br>b<br>E1 E1 3.80 3.90 3.85<br>h E0 3.85 3.95 3.90<br>Q<br>e -- -- 1.27<br>7°<br>c h - -- 0.35<br>A 4°± 3° L 0.62 0.82 0.72<br>G auge Plane Q 0.60 0.70 0.65<br>S eating Plane All Dimensions in mm<br>L<br>e A1 E0<br>D<br>9° (All sides)<br>R 0.1<br>45°<br>**----- End of picture text -----**<br>
## **Suggested Pad Layout**
Please see http://www.diodes.com/package-outlines.html for the latest version.
**SO-8**
**==> picture [148 x 175] intentionally omitted <==**
**----- Start of picture text -----**<br>
ean X1<br>Y1<br>Y<br>O00 C X<br>**----- End of picture text -----**<br>
**==> picture [103 x 55] intentionally omitted <==**
**----- Start of picture text -----**<br>
Dimensions Value (in mm)<br>C 1.27<br>X 0.802<br>X1 4.612<br>Y 1.505<br>Y1 6.50<br>**----- End of picture text -----**<br>
6 of 7 **www.diodes.com**
DMTH6016LSDQ Document number: DS38575 Rev. 2 - 2
January 2017 © Diodes Incorporated
**DMTH6016LSDQ**
## **IMPORTANT NOTICE**
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.
## **LIFE SUPPORT**
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
- A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2017, Diodes Incorporated
**www.diodes.com**
7 of 7 **www.diodes.com**
DMTH6016LSDQ Document number: DS38575 Rev. 2 - 2
January 2017 © Diodes Incorporated
Updated at June 9, 2026
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →