DMTH6010LPD-13

**DMTH6010LPD** 7 

## **60V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**BVDSS**|**RDS(ON) max**|**ID max**<br>**TC = +25°C**|
|---|---|---|
|60V|11mΩ@VGS= 10V|47.6A|
||16mΩ@VGS= 4.5V|39.5A|



## **Features and Benefits** 

- Rated to +175°C – Ideal for High Ambient Temperature Environments 

- 100% Unclamped Inductive Switching – ensures more reliable and robust end application 

- High Conversion Efficiency 

- Low Input Capacitance 

- Fast Switching Speed 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Description and Applications** 

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. 

- Engine Management Systems 

- Body Control Electronics 

- DCDC Converters 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- **An Automotive-Compliant Part is Available Under Separate Datasheet (DMTH6010LPDQ)** 

## **Mechanical Data** 

- Case: PowerDI5060-8 (Type C) 

- Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Finish  Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

- Weight: 0.097 grams (Approximate) 

**==> picture [527 x 112] intentionally omitted <==**

**----- Start of picture text -----**<br>
D1 D2<br>S1 D1<br>G1 D1<br>S2 D2 G1 G2<br>G2 D2<br>Og ©) &)<br>Pin1  S1 S2<br>Pin out<br>Top View  Bottom View  Top View  Equivalent Circuit<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMTH6010LPD-13|PowerDI5060-8 (Type C)|2,500/Tape &Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   3. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

**==> picture [73 x 129] intentionally omitted <==**

**----- Start of picture text -----**<br>
D1 D1 D2 D2<br>H6010LD<br>YY WW<br>S1 G1 S2 G2<br>**----- End of picture text -----**<br>


= Manufacturer’s Marking H6010LD = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 16 = 2016) WW = Week (01 to 53) 

1 of 7 **www.diodes.com** 

DMTH6010LPD Document number: DS38244  Rev. 2 - 2 

May 2016 © Diodes Incorporated 

**DMTH6010LPD** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

||**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||
|---|---|---|
||**Characteristic**<br>**Symbol**<br>**Value**<br>**Units**<br>~~ff~~||
||Drain-Source Voltage<br>VDSS<br>60<br>V||
|Gate-Source Voltage<br>VGSS<br>±20<br>V<br>Continuous Drain Current (Note 6)<br>TC= +25°C<br>TC= +100°C<br>ID<br>47.6<br>33.7<br>A<br>Continuous Drain Current (Note 5)<br>TA= +25°C<br>TA= +70°C<br>ID<br>13.1<br>10.9<br>A<br>Pulsed Drain Current (10µs pulse, duty cycle = 1%)<br>IDM<br>90<br>A<br>Maximum Continuous Body Diode Forward Current (Note 6)<br>IS<br>31<br>A<br>Avalanche Current, L = 0.1mH<br>IAS<br>A<br>Avalanche Energy, L = 0.1mH<br>EAS<br>20<br>mJ<br>**Thermal Characteristics**<br>**Characteristic**<br>**Symbol**<br>**Value**<br>**Unit**<br>Total Power Dissipation(Note 5)<br>TA= +25°C<br>PD<br>2.8<br>W<br>Thermal Resistance,Junction to Ambient(Note 5)<br>RθJA<br>53<br>°C/W<br>Total Power Dissipation(Note 6)<br>TC= +25°C<br>PD<br>37.5<br>W<br>Thermal Resistance,Junction to Case(Note 6)<br>RθJC<br>4<br>°C/W<br>Operatingand Storage Temperature Range<br>TJ,TSTG<br>-55 to +175<br>°C<br>~~GG~~<br>~~a~~<br>~~a~~<br>~~a~~<br>~~a~~<br>~~=~~<br>~~ef~~<br>~~fe~~|||
||**Electrical Characteristics **(@TA= +25°C, unless otherwise specified.)||
||||
||**Characteristic**<br>**Symbol**<br>**Min**<br>**Typ **<br>**Max**<br>**Unit**<br>**Test Condition**||
||**OFF CHARACTERISTICS(Note 7) **||
||Drain-Source Breakdown Voltage<br>BVDSS<br>60<br>—<br>—<br>V<br>VGS= 0V, ID= 1mA<br>Zero Gate Voltage Drain Current<br>IDSS<br>—<br>—<br>1<br>µA<br>VDS= 48V, VGS= 0V<br>Gate-Source Leakage<br>IGSS<br>—<br>—<br>±100<br>nA<br>VGS= ±20V, VDS= 0V<br>~~———~~||
||**ON CHARACTERISTICS(Note 7) **<br>Gate Threshold Voltage<br>VGS(TH)<br>1<br>—<br>3<br>V<br>VDS= VGS, ID= 250μA<br>~~ee~~||
||Static Drain-Source On-Resistance<br>RDS(ON)<br>—<br>8.5<br>11<br>mΩ<br>VGS= 10V, ID= 20A<br>—<br>10.9<br>16<br>VGS= 4.5V, ID= 20A<br>~~|~~||
||Diode Forward Voltage<br>VSD<br>—<br>0.9<br>1.2<br>V<br>VGS= 0V, IS= 20A<br>**DYNAMIC CHARACTERISTICS(Note 8)**<br>Input Capacitance<br>Ciss<br>—<br>2615<br>—<br>pF<br>VDS= 30V, VGS= 0V,<br>f = 1MHz<br>Output Capacitance<br>Coss<br>—<br>1415<br>—<br>pF<br>Reverse Transfer Capacitance<br>Crss<br>—<br>58<br>—<br>pF<br>Gate Resistance<br>Rg<br>—<br>0.67<br>—<br>Ω<br>VDS= 0V,VGS= 0V,f = 1MHz<br>Total Gate Charge(VGS= 4.5V)<br>Qg<br>—<br>20.3<br>—<br>nC<br>VDS= 30V, ID= 20A<br>Total Gate Charge(VGS= 10V)<br>Qg<br>—<br>40.2<br>—<br>nC<br>Gate-Source Charge<br>Qgs<br>—<br>5.9<br>—<br>nC<br>Gate-Drain Charge<br>Qgd<br>—<br>9.3<br>—<br>nC<br>Turn-On DelayTime<br>tD(ON) <br>—<br>5.7<br>—<br>ns<br>VDD= 30V, VGS= 10V,<br>ID= 20A, RG= 3Ω<br>Turn-On Rise Time<br>tR<br>—<br>8.8<br>—<br>ns<br>Turn-Off Delay Time<br>tD(OFF) <br>—<br>20.8<br>—<br>ns<br>Turn-Off Fall Time<br>tF<br>—<br>7.4<br>—<br>ns<br>Body Diode Reverse Recovery Time<br>tRR<br>—<br>34.5<br>—<br>ns<br>IF= 20A, di/dt = 100A/μs<br>Body Diode Reverse Recovery Charge<br>QRR<br>—<br>37.5<br>—<br>nC<br>~~ee~~<br>~~ee~~<br>~~ee ee ee ee ee ee~~<br>~~ee~~<br>~~———_—~~<br>~~eee~~<br>~~——————~~<br>~~ee~~<br>~~rr~~||
||Notes:<br>5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.||
||6. Thermal resistance from junction to soldering point (on the exposed drain pad).||



7. Short duration pulse test used to minimize self-heating effect. 

8. Guaranteed by design. Not subject to product testing. 

2 of 7 **www.diodes.com** 

DMTH6010LPD Document number: DS38244  Rev. 2 - 2 

May 2016 © Diodes Incorporated 

**DMTH6010LPD** 

**==> picture [507 x 683] intentionally omitted <==**

**----- Start of picture text -----**<br>
50.0  30<br>45.0  VDS = 5V<br>40.0  Fe VGS = 10.0V 25<br>VGS = 4.5V<br>35.0<br>VGS = 4.0V 20<br>30.0  RT<br>25.0  VGS = 3.5V 15 175 [o] C<br>20.0  a HE 150 [o] C<br>Va 10 ff l<br>15.0<br>125 [o] C 85 [o] C<br>10.0  Poo VGS = 3.0V Wh<br>5 25 [o] C<br>5.0<br>VGS = 2.5V -55 [o] C<br>0.0  p——— oe 0 a Z<br>0 0.5 1 1.5 2 2.5 3 1 1.5 2 2.5 3 3.5 4<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic Figure 2. Typical Transfer Characteristic<br>0.014 0.1<br>0.08<br>0.012<br>0.06<br>0.01 panes VGS = 4.5V eee<br>0.04<br>0.008<br>VGS = 10.0V 0.02 ID = 20A<br>H ut<br>0.006 0<br>0 5 10 15 20 25 30 35 40 45 50 0 4 8 12 16 20<br>ID, DRAIN-SOURCE CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3. Typical On-Resistance vs Drain Current  Figure 4. Typical Transfer Characteristic<br>and Gate Voltage<br>0.02 1.8<br>VGS = 4.5V VGS = 10V, ID = 20A<br>175 [o] C<br>0.018<br>1.6<br>== 150 [o] C —~|<br>0.016 125 [o] C<br>1.4<br>0.014 S SS Oe<br>85 [o] C<br>1.2<br>0.012 tS<br>pt | | 1 Trey VGS = 4.5V, ID = 20A<br>0.01 25 [o] C<br>0.008 SS S -55 [o] C 0.8 B et<br>0.006 PPPS 0.6 fae<br>0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150 175<br>ID, DRAIN CURRENT(A) TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 5. Typical On-Resistance vs Drain Current  Figure 6. On-Resistance Variation with Junction<br>and Junction Temperature Temperature<br>, DRAIN CURRENT (A)ID , DRAIN CURRENT (A)ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω) , DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON) DS(ON)<br>R R<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>,  DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


3 of 7 **www.diodes.com** 

DMTH6010LPD Document number: DS38244  Rev. 2 - 2 

May 2016 © Diodes Incorporated 

**DMTH6010LPD** 

**==> picture [498 x 671] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.02 2.5<br>0.016 VGS = 4.5V, ID = 20A a a<br>2<br>ID = 1mA<br>0.012<br>pooeed awe<br>1.5<br>0.008 PETa SOE ID = 250µA<br>— ss VGS = 10V, ID = 20A TT N e<br>1<br>0.004<br>0 0.5<br>-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175<br>TJ, JUNCTION TEMPERATURE ( ℃ ) TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 7. On-Resistance Variation with Junction  Figure 8. Gate Threshold Variation vs Junction<br>Temperature Temperature<br>20 10000<br>VGS = 0V Ciss f = 1MHz<br>15 1000<br>| a ra Coss<br>10 100<br>TJ = 175 [o] C HLL, Sen Seeee088 Crss<br>TJ = 85 [o] C<br>5 TJ = 150 [o] C 10<br>Ih TJ = 25 [o] C NS<br>TJ = 125 [o] C<br>TJ = -55 [o] C<br>0 By 1  PEPE EEE [rere]<br>0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20 25 30 35 40 45 50 55 60<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs Current Figure 10. Typical Junction Capacitance<br>10 100<br>R<br>DS(ON)<br>9 Limited<br>PAT INAZINE<br>8<br>10 PW = 1µs<br>7<br>PW = 10µs<br>6<br>PW = 100µs<br>5 1 PW = 1ms<br>4 PW = 10ms<br>32 VDS = 30V, ID = 20A 0.1 TTJ(Max) C = 25= 175 ℃ ℃ PW = 100msPW = 1s<br>Single Pulse<br>DUT on Infinite Heatsink<br>1<br>fii} t tt tt VGS = 10V ce<br>0 Ji ttt tt] fy 0.01 Ce CO<br>0 5 10 15 20 25 30 35 40 45 0.1 1 10 100<br>Qg (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11. Gate Charge Figure 12. SOA, Safe Operation Area<br>, GATE THRESHOLD VOLTAGE  (V)<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>GS(TH)<br>V<br>DS(ON)<br>R<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


4 of 7 **www.diodes.com** 

DMTH6010LPD Document number: DS38244  Rev. 2 - 2 

May 2016 

© Diodes Incorporated 

**DMTH6010LPD** 

**==> picture [445 x 274] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>S D=0.7 c<br>D=0.5 ee ene D=0.9<br>e ae gcc|et<br>D=0.3<br>ee re | ||<br>0.1 T 7200<br>Be D=0.1 c ee StH<br>Ft D=0.05 Te TTT<br>Ht At PY<br>D=0.02<br>A TU TTT TTT<br>0.01 eT ANN<br>P D=0.01 RtH<br>a cc 7 a 8 8<br>pes A<br>EA D=0.005 [TT] TTTHI<br>= [AT] RθJC (t) = r(t) * RθJC<br>D=Single Pulse RθJC = 4 ℃ /W<br>Duty Cycle, D = t1/t2<br>0.001<br>1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


5 of 7 **www.diodes.com** 

DMTH6010LPD Document number: DS38244  Rev. 2 - 2 

May 2016 © Diodes Incorporated 

**DMTH6010LPD** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**PowerDI5060-8 (Type C)** 

**==> picture [461 x 304] intentionally omitted <==**

**----- Start of picture text -----**<br>
D PowerDI5060-8 (Type C)<br>D1 Dim  Min  Max  Typ<br>A  0.90 1.10 1.00<br>0 (4x)<br>A1  0  0.05  0.02<br>b  0.33 0.51  0.41<br>x c<br>E1 E A1 b1  0.300 0.366 0.333<br>b2  0.20 0.35 0.25<br>y Seating Plane c  0.23 0.33 0.277<br>e D  5.15 BSC<br>1 D1  4.85  4.95  4.90<br>Ø 1.000 Depth 0.07± 0.030 0 1(4x) D2  1.40  1.60  1.50<br>fet, NS" —<br>\ IL ——— D3  -  -  3.98<br>b1(8x) DETAIL A E  6.15 BSC<br>e/2 E1  5.75  5.85  5.80<br>b(8x)<br>ath 1 ———— E2  3.56  3.76  3.66<br>e  1.27BSC<br>b2(2x)<br>D3<br>L k k  -  -  1.27<br>k1 A k1  0.56  -  -<br>L  0.51  0.71  0.61<br>L4<br>E2 D2 D2 M DETAIL A La L1  0.51 0.05  0.71 0.20  0.175 0.61<br>|eirae a — L4  ————— -  -  0.125<br>M  3.50  3.71  3.605<br>La L1<br>ae ——— x  -  -  1.400<br>ee y -  -  1.900<br>θ  10°  12°  11°<br>——— θ1  6°  8°  7°<br>rl All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**PowerDI5060-8 (Type C)** 

**==> picture [145 x 172] intentionally omitted <==**

**----- Start of picture text -----**<br>
X4<br>8<br>“Ly Pu ry:<br>Y1<br>X3 X2<br>Y2<br>Y3<br>G1<br>X1<br>Y(4x)<br>4 Uy,<br>1<br>G<br>X C<br>**----- End of picture text -----**<br>


**==> picture [99 x 149] intentionally omitted <==**

**----- Start of picture text -----**<br>
Value<br>Dimensions<br>(in mm)<br>C  1.270<br>a G  0.660<br>G1  0.820<br>X  0.610<br>X1  3.910<br>X2  1.650<br>X3  1.650<br>X4  4.420<br>Y  1.270<br>Y1  1.020<br>Y2  3.810<br>== Y3 6.610<br>**----- End of picture text -----**<br>


6 of 7 **www.diodes.com** 

DMTH6010LPD Document number: DS38244  Rev. 2 - 2 

May 2016 © Diodes Incorporated 

**DMTH6010LPD** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2016, Diodes Incorporated 

**www.diodes.com** 

7 of 7 **www.diodes.com** 

DMTH6010LPD Document number: DS38244  Rev. 2 - 2 

May 2016 © Diodes Incorporated