DMTH4008LPDW-13

**DMTH4008LPDW** CT 

## **40V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**BVDSS**|**RDS(ON) Max**|**ID Max**<br>**TC = +25°C**|
|---|---|---|
|40V|12.3mΩ@VGS= 10V|46.2A|
||17.5mΩ@VGS= 4.5V|38.7A|



## **Features and Benefits** 

- Rated to +175°C – Ideal for High Ambient Temperature Environments 

- 100% Unclamped Inductive Switching, Test in Production– Ensures More Reliable and Robust End Application 

- High Conversion Efficiency 

- Low RDS(ON) – Minimizes On State Losses 

- Low Input Capacitance 

- Fast Switching Speed 

- Wettable Flank for Improved Optical Inspection 

## **Description and Applications** 

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

- Power Management Functions 

- DC-DC Converters 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative.** 

   - **https://www.diodes.com/quality/product-definitions/** 

- **An Automotive-Compliant Part is Available Under Separate Datasheet (DMTH4008LPDWQ)** 

## **Mechanical Data** 

- Case: PowerDI[®] 5060-8 

- Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Finish  Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

- 

- Weight: 0.097 grams (Approximate) 

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              PowerDI5060-8/SWP (Type UXD)<br>D1 D2<br>S1 D1<br>/~ , U L<br>G1 qI D1<br>S2 0| D2 G1 G2<br>G2 O | D2<br>S1 S2<br>Top View  Bottom View<br>Pin Out (Top View)  Equivalent Circuit<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMTH4008LPDW-13|PowerDI5060-8/SWP(Type UXD)|2,500/Tape & Reel|



Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See http://www.diodes.com/quality/lead_free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

**TH4008LDW YY WW** 

mt = Manufacturer’s Marking TH4008LDW = Product Type Marking Code YYWW or YYWW = Date Code Marking YY or YY = Year (ex: 20 = 2020) WW = Week (01 to 53) 

_PowerDI is a registered trademark of Diodes Incorporated._ 

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DMTH4008LPDW Document number: DS42438 Rev. 1 - 2 

May 2020 © Diodes Incorporated 

**DMTH4008LPDW** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage||VDSS|40|V|
|Gate-Source Voltage||VGSS|±20|V|
|Continuous Drain Current (Note 5)|TA= +25°C<br>TA= +100°C|ID|10.0<br>7.1|A|
|Continuous Drain Current (Note 6)|TC= +25°C<br>TC= +100°C|ID|46.2<br>32.7|A|
|Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)||IDM|184|A|
|Maximum Continuous Body Diode Forward Current (Note 6)||IS|43.7|A|
|Pulsed Body Diode Forward Current (10µs Pulse, Duty Cycle = 1%)||ISM|184|A|
|Avalanche Current, L = 0.1mH||IAS|23.1|A|
|Avalanche Energy, L = 0.1mH||EAS|26.6|mJ|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5)|TA= +25°C|PD|2.67|W|
|Thermal Resistance,Junction to Ambient(Note 5)||RθJA|56.6|°C/W|
|Total Power Dissipation(Note 6)|TC= +25°C|PD|39.4|W|
|Thermal Resistance,Junction to Case(Note 6)||RθJC|3.8|°C/W|
|Operatingand Storage Temperature Range||TJ, TSTG|-55 to +175|°C|



**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
|~~——$S[—ee~~|||||||
|**Characteristic**<br>~~——$S[—~~|**Symbol**<br>~~——$S[—~~|**Min**<br>~~ee~~|**Typ **<br>~~ee~~|**Max**<br>~~ee~~|**Unit**<br>~~ee~~|**Test Condition**<br>~~ee~~|
|**OFF CHARACTERISTICS(Note 7) **<br>~~——$S[—ee~~|||||||
|Drain-Source Breakdown Voltage<br>~~——$S[—~~|BVDSS<br>~~——$S[—~~|40<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|V<br>~~ee~~|VGS= 0V, ID= 250μA<br>~~ee~~|
|Zero Gate Voltage Drain Current<br>~~——$S[—~~|IDSS<br>~~——$S[—~~|—<br>~~ee~~|—<br>~~ee~~|1<br>~~ee~~|µA<br>~~ee~~|VDS= 32V, VGS= 0V<br>~~ee~~|
|Gate-Source Leakage<br>~~——$S[—~~<br>~~a~~|IGSS<br>~~——$S[—~~<br>~~GO~~|—<br>~~ee~~<br>~~GO~~|—<br>~~ee~~<br>~~GO~~|±100<br>~~ee~~<br>~~GO ~~|nA<br>~~ee~~<br> ~~(OO~~|VGS= ±20V, VDS= 0V<br>~~ee~~<br>~~(OO~~|
|**ON CHARACTERISTICS(Note 7) **<br>~~——$S[— ee~~<br>~~COGG~~|||||||
|Gate Threshold Voltage<br>~~GG~~|VGS(TH)<br>~~GG~~|1.2<br>~~GG~~<br>~~reece~~|1.88<br>~~GG~~<br>~~CO~~<br>~~reece~~|2.3<br>~~GG~~<br>~~GG~~<br>~~reece~~|V<br>~~GG~~<br>~~GG~~<br>~~reece~~|VDS= VGS, ID= 250μA<br>~~GG~~<br>~~GG~~<br>~~ee~~|
|Static Drain-Source On-Resistance<br>~~ee~~|RDS(ON)<br>~~ee~~|—<br>~~ee~~<br>~~reece~~|9.5<br>~~CO ~~<br>~~ee~~<br>~~reece~~|12.3<br> ~~GG~~<br>~~ee~~<br>~~reece~~|mΩ<br>~~GG~~<br>~~ee~~<br>~~reece~~|VGS= 10V, ID= 20A<br>~~GG~~<br>~~ee~~<br>~~ee~~|
|||—<br>~~ee~~<br>~~reece~~|11.9<br>~~ee~~<br>~~reece~~|17.5<br>~~ee~~<br>~~reece~~|mΩ<br>~~ee~~<br>~~reece~~|VGS= 4.5V, ID= 10A<br>~~ee~~<br>~~ee~~|
|Diode Forward Voltage<br>~~ee~~|VSD<br>~~ee~~|—<br>~~ee~~<br>~~reece~~|0.9<br>~~ee~~<br>~~reece~~|1.2<br>~~ee~~<br>~~reece~~|V<br>~~ee~~<br>~~reece~~|VGS= 0V, IS= 20A<br>~~ee~~<br>~~ee~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~reece~~<br>~~ee~~<br>~~ae~~|||||||
|Input Capacitance<br>~~eee~~|Ciss<br>~~eee~~|—<br>~~reece~~<br>~~eee~~|881<br>~~reece~~<br>~~eee~~|—<br>~~reece~~<br>~~eee~~|pF<br>~~reece~~<br>~~eee~~<br>~~ae~~|VDS= 20V, VGS= 0V,<br>f = 1MHz<br>~~ee~~<br>~~eee~~|
|Output Capacitance<br>~~eee~~|Coss<br>~~eee~~|—<br>~~eee~~|496<br>~~eee~~|—<br>~~eee~~|pF<br>~~eee~~<br>~~ae~~||
|Reverse Transfer Capacitance<br>~~eee~~|Crss<br>~~eee~~|—<br>~~eee~~|19.5<br>~~eee~~|—<br>~~eee~~|pF<br>~~eee~~<br>~~ae~~||
|Gate Resistance|Rg|—|2.06|—|Ω<br>~~ae~~|VDS= 0V, VGS= 0V, f = 1MHz|
|Total Gate Charge(VGS= 10V)<br>~~eee~~|Qg<br>~~eee~~|—<br>~~eee~~|12.3<br>~~eee~~|—<br>~~eee~~|nC<br>~~ae~~<br>~~eee~~|VDS= 20V, ID= 20A<br>~~eee~~|
|Total Gate Charge(VGS= 4.5V)<br>~~eee~~|Qg<br>~~eee~~|—<br>~~eee~~|5.8<br>~~eee~~|—<br>~~eee~~|nC<br>~~eee~~||
|Gate-Source Charge<br>~~eee~~|Qgs<br>~~eee~~|—<br>~~eee~~|2.6<br>~~eee~~|—<br>~~eee~~|nC<br>~~eee~~||
|Gate-Drain Charge<br>~~eee~~<br>~~ee~~|Qgd<br>~~eee~~<br>~~ee~~|—<br>~~eee~~<br>~~ee~~|1.6<br>~~eee~~<br>~~ee~~|—<br>~~eee~~<br>~~ee~~|nC<br>~~eee~~<br>~~ee~~||
|Turn-On Delay Time<br>~~ee~~<br>~~ee~~|tD(ON)<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|3.82<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~|VDD= 20V, VGS= 10V,<br>Rg= 3Ω, ID= 20A<br>~~ee~~|
|Turn-On Rise Time<br>~~ee~~|tR<br>~~ee~~|—<br>~~ee~~|4.76<br>~~ee~~|—<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Delay Time<br>~~ee~~|tD(OFF) <br>~~ee~~|—<br>~~ee~~|12.6<br>~~ee~~|—<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Fall Time<br>~~ee~~<br>~~a~~|tF<br>~~ee~~|—<br>~~ee~~|4.83<br>~~ee~~|—<br>~~ee~~|ns<br>~~ee~~||
|Body Diode Reverse Recovery Time<br>~~a~~|tRR|—|31.9|—|ns|IF= 20A, di/dt = 100A/μs|
|BodyDiode Reverse RecoveryCharge<br>~~GOO~~|QRR<br>~~GOO~~|—<br>~~GOO~~|25.0<br>~~GOO~~|—<br>~~GOO~~|nC<br>~~GOO~~||



- Notes: 5. Device mounted on FR-4 substrate PC board, 2oz. copper, with thermal bias to bottom layer 1inch square copper plate. 

   6. Thermal resistance from junction to soldering point (on the exposed drain pad). 

   7. Short duration pulse test used to minimize self-heating effect. 

   8. Guaranteed by design. Not subject to product testing. 

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DMTH4008LPDW Document number: DS42438 Rev. 1 - 2 

May 2020 © Diodes Incorporated 

**DMTH4008LPDW** 

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30.0 30<br>VDS = 5V<br>25.0 PL 25 e ee<br>20.0 VGS = 3.5V 20<br>B W ||| e e<br>*~ VGS = 4.0V eee |<br>15.0 VGS = 4.5V 15<br>Be VGS = 5.0V<br>10.0 VGS = 10.0V VGS = 3.2V 10<br>125℃<br>85℃<br>5.0 /_- —_ 5 150℃ WY IT<br>VGS = 3.0V 175℃ 25℃<br>VGS = 2.5V -55℃<br>0.0 i — —— — 0 -———<br>HH<br>0 0.5 1 1.5 2 2.5 3 1 1.5 2 2.5 3 3.5 4<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic Figure 2. Typical Transfer Characteristic<br>0.016 0.05<br>0.015 TT | [| | | 0.045 es |<br>0.014<br>0.04<br>0.013 VGS = 4.5V<br>0.035<br>0.012 e e eeeee<br>0.03<br>0.011 =——sT_ 7, | | 4 ee ee ee ee eee<br>0.010 0.025<br>0.009 S e 0.02 EE<br>0.008 VGS = 10.0V<br>0.007 0.015 ID = 20A<br>a ee 0.01<br>0.006<br>0.005 0.005<br>0.004 ee 0 e e<br>0 5 10 15 20 25 30 0 4 8 12 16 20<br>ID, DRAIN-SOURCE CURRENT (A)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3. Typical On-Resistance vs. Drain Current and  Figure 4. Typical Transfer Characteristic<br>Gate Voltage<br>0.02 2<br>0.018 VGS = 10V<br>a 1.8 PTT EET yy<br>0.016 175℃ 150℃ 125℃ _<br>0.014 1.6 VGS = 10V, ID = 20A<br>1.4<br>0.012<br>0.01 85 ——————_—_——— ℃ 1.2 |] | | | lhe<br>0.008 25℃<br>1 VGS = 4.5V, ID = 10A<br>0.006 -55℃<br>0.8<br>0.004 = == aee7 eens<br>a 0.6 o tt<br>0.002<br>0 FSS 4 s 0.4 ET<br>0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150 175<br>ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (℃)<br>Figure 5. Typical On-Resistance vs. Drain Current and  Figure 6. On-Resistance Variation with Temperature<br>Temperature<br>, DRAIN CURRENT (A)ID , DRAIN CURRENT (A)ID<br>)(W )(W<br>, DRAIN-SOURCE ON-RESISTANCE  , DRAIN-SOURCE ON-RESISTANCE<br>DS(ON) DS(ON)<br>R R<br>)(W<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R DS(ON)<br>R<br>**----- End of picture text -----**<br>


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DMTH4008LPDW Document number: DS42438 Rev. 1 - 2 

May 2020 © Diodes Incorporated 

**DMTH4008LPDW** 

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0.02 2.4<br>0.019<br>2.2<br>0.018<br>0.017<br>2<br>0.016 EEE rE Se<br>0.015 1.8 ID = 1mA<br>0.014 VGS = 4.5V, ID = 10A<br>0.013 aa a 1.6 N ee<br>0.012 a ae aa 1.4 fof | NNR.<br>0.011 ID = 250μA<br>0.01 1.2<br>0.009 as VGS = 10V, ID = 20A 1 \ <? =<br>0.008 ae P| ft dt dE dT [UTNS]<br>0.007<br>0.8<br>0.006 P ISS pti<br>0.005 E 0.6 P t | tEtttt ]  tNtt<br>-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175<br>TJ, JUNCTION TEMPERATURE (℃) TJ, JUNCTION TEMPERATURE (℃)<br>Figure 8. Gate Threshold Variation vs. Junction<br>Figure 7. On-Resistance Variation with Temperature<br>Temperature<br>30 10000<br>VGS = 0V<br>f=1MHz<br>25 T T| t t<br>1000 Ciss<br>20 fo<br>| SSS<br>Coss<br>15 — 100 ee ee ee ee —_—__—_—<br>TA = 85℃<br>10 TA = 125℃ [,Wy} S eS<br>TA = 150℃ 10<br>5 TA = 175℃ i}i] | TA = 25℃ po|_| | | NN Crss<br>0 Wisi Ly TA = -55℃ 1 A e Se<br>0 0.3 0.6 0.9 1.2 0 5 10 15 20 25 30 35 40<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current Figure 10. Typical Junction Capacitance<br>10 1000<br>RDS(ON) Limited<br>8 100<br>6 10 PW =1µs<br>PW =10ms<br>4 1 PW =100ms<br>VDS = 20V, ID = 20A TJ(Max) = 175 ℃  PW =1ms<br>TC = 25 ℃ PW =10ms<br>Single Pulse PW =100ms<br>2 0.1 DUT on Infinite  DC<br>Heatsink<br>0 0.01 VGS= 10V eee<br>0 3 6 9 12 15 0.1 1 10 100<br>Qg (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11. Gate Charge Figure 12. SOA, Safe Operation Area<br>(W)<br>, DRAIN-SOURCE ON-RESISTANCE  , GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>DS(ON) V<br>R<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


4 of 7 **www.diodes.com** 

DMTH4008LPDW Document number: DS42438 Rev. 1 - 2 

May 2020 © Diodes Incorporated 

**DMTH4008LPDW** 

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1<br>| nu a ss nu sn nn<br>ae<br>= eee D=0.7 er tt<br>fT ARH TT PTPP<br>D=0.5<br>F CCLA<br>D=0.3 4 D=0.9<br>| TBAT LINAC Tl<br>P | LIMaPega LT I IIE EINE TINT ETT<br>0.1 e72 0<br>D=0.1<br>|_re) | [tT Am leoer et ee ee<br>a<br>Ler | | mm<br>D=0.05<br>Ln ATT<br>|_| WAZA | I EE EEE ETI ETE ET<br>pT AI ERM LUT ECT ETE EINE INT ETT<br>D=0.02<br>Be<br>0.01 UK<br>SeaD alll D=0.01 SEH0 ECE0=e EHH0 0 HEHE rr<br>aM 2 |<br>D=0.005<br>|AH.YK aNICHI | ETT TT<br>D=Single Pulse<br>RθJC(t) = r(t) * RθJC<br>RθJC = 3.77℃/W<br>Duty Cycle, D = t1 / t2<br>0.001 foe ek<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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DMTH4008LPDW Document number: DS42438 Rev. 1 - 2 

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**DMTH4008LPDW** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**PowerDI5060-8/SWP (Type UXD)** 

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PowerDI5060-8/SWP<br>D (Type UXD)<br>D1 Dim  Min  Max  Typ<br>8 5 A  0.90 1.10 1.00<br>A1  0.00 0.05 --<br>b  0.30 0.50 0.41<br>b2  0.20 0.35 0.25<br>A= b4  0.25REF<br>c  0.230 0.330 0.277<br>E1 E A1 D  5.15 BSC<br>1.900 1.400 c Seating Plane D1  4.70 5.10 4.90<br>e D2  1.46 1.66 1.55<br>D3 3.78 4.18 3.98<br>E  6.40 BSC<br>E1  5.60 6.00 5.80<br>1 4<br>E2  3.46 3.86 3.66<br>Ø 1.000 Depth 0.07± 0.030 DETAIL A E2a  4.195 4.595 4.395<br>e/2 e 1.27BSC<br>b(8x) k  1.05 --  --<br>1 L  0.635 0.835 0.735<br>L La  0.635 0.835 0.735<br>rte === L1  0.200 0.400 0.300<br>b2(2x) D3 k M  3.205 4.005 3.605<br>W  0.025 0.225 0.125<br>θ  10°  12°  11°<br>W A θ1  6°  8°  7°<br>E2 D2 D2 All Dimensions in mm<br>E3 M<br>DETAIL A<br>La<br>‘Art ===<br>8<br>| en I. th. b4(8x) an: L1 -<br>ested Pad Layout yout out<br>Please see http://www.diodes.com/package-outlines.html for the latest version.<br>PowerDI5060-8/SWP (Type UXD)<br>X2<br>Value<br>Dimensions<br>ae a n a t i n Y1 fe (in mm)<br>C  1.270<br>G  0.660<br>G1  0.820<br>X  0.610<br>Y2 X1 X1<br>X1  1.720<br>Y3 X2  4.420<br>Y  1.270<br>G1<br>Y1  1.020<br>C Y2  3.810<br>AG = Y3 6.610<br>Y(4x)<br>' ——<br>foo! X(8x) G<br>4x0<br>4x0<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout yout out** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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DMTH4008LPDW Document number: DS42438 Rev. 1 - 2 

May 2020 © Diodes Incorporated 

**DMTH4008LPDW** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

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DMTH4008LPDW Document number: DS42438 Rev. 1 - 2 

May 2020 © Diodes Incorporated