DMTH10H017LPD-13

**Green DMTH10H017LPD** ~~@~~ - **100V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON) max**|**ID max**<br>**TC = +25°C**|
|100V|17.4mΩ@VGS= 10V|59A|
||30.3mΩ@VGS= 4.5V|45A|



## **Features and Benefits** 

- Rated to +175°C – Ideal for High Ambient Temperature Environments 

- 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application 

- High Conversion Efficiency 

- Low RDS(ON) – Minimizes On State Losses 

- Low Input Capacitance 

## **Description and Applications** 

This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications. 

   - Fast Switching Speed 

   - **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

   - **Halogen and Antimony Free. “Green” Device (Note 3)** 

   - **Qualified to AEC-Q101 Standards for High Reliability** 

   - **An Automotive-Compliant Part is Available Under Separate Datasheet (DMTH10H017LPDQ)** 

- Synchronous Rectifier 

- DC-DC Converters 

- Primary Side Switching 

## **Mechanical Data** 

- Case: PowerDI[®] 5060-8 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 **e3** 

- Weight: 0.097 grams (Approximate) 

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D1 D2<br>S1 D1<br>%, J G1 D1<br>G1 G2 S2 D2<br>G2 D2<br>S1 S2<br>Pin1<br>Top View<br>Top View  Bottom View  Equivalent Circuit<br>Pin Configuration<br>g Information Information (Note 4)<br>Part Number Case Packaging<br>DMTH10H017LPD-13 PowerDI5060-8 (Type E) 2500 / Tape & Reel<br>**----- End of picture text -----**<br>


## **Ordering Information Information** (Note 4) 

- Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 

   2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

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D1 D1 D2 D2<br>H10H017LD<br>YY WW<br>S1 G1 S2 G2<br>**----- End of picture text -----**<br>


- = Manufacturer’s Marking 

- H10H017LD = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 19 = 2019) WW = Week (01 to 53) 

_PowerDI is a registered trademark of Diodes Incorporated._ 

1 of 7 **www.diodes.com** 

DMTH10H017LPD Document number: DS40752  Rev. 4 - 2 

April 2019 © Diodes Incorporated 

**DMTH10H017LPD** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage||VDSS|100|V|
|Gate-Source Voltage||VGSS|±20|V|
|Continuous Drain Current, VGS= 10V (Note 6)|TC= +25°C<br>TC= +100°C|ID|59<br>42|A|
|Maximum Body Diode Forward Current (Note 6)||IS|60|A|
|Pulsed Drain Current(10μs Pulse, TC=+25°C, Package Limited)||IDM|236|A|
|Pulsed BodyDiode Forward Current(10μs Pulse,TC=+25°C,Package Limited)||ISM|236|A|
|Avalanche Current, L = 3mH (Note 9)||IAS|10|A|
|Avalanche Energy, L = 3mH (Note 9)||EAS|150|mJ|
|Avalanche Current, L = 1mH (Note 9)||IAS|10|A|
|Avalanche Energy, L = 1mH (Note 9)||EAS|50|mJ|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation|TA= +25°C|PD|2.6|W|
|Thermal Resistance, Junction to Ambient (Note 5)||RθJA|56|°C/W|
|Total Power Dissipation|TC= +25°C|PD|93|W|
|Thermal Resistance, Junction to Case (Note 6)||RθJC|1.6|°C/W|
|Operatingand Storage Temperature Range||TJ, TSTG|-55 to +175|°C|



**Electrical Characteristics** (@TC = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TC = +25°C, unless otherwise specified.)C = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TC = +25°C, unless otherwise specified.)C = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TC = +25°C, unless otherwise specified.)C = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TC = +25°C, unless otherwise specified.)C = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TC = +25°C, unless otherwise specified.)C = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TC = +25°C, unless otherwise specified.)C = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TC = +25°C, unless otherwise specified.)C = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~ee~~|**Symbol**<br>~~ee~~|**Min**<br>~~ee~~|**Typ**<br>~~ee~~|**Max**<br>~~ee~~|**Unit**<br>~~ee~~|**Test Condition**<br>~~ee~~|
|**OFF CHARACTERISTICS(Note 7)**<br>~~ee~~|||||||
|Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~<br>~~ee~~|100<br>~~ee~~<br>~~ee~~|<br>~~ee~~|<br>~~ee~~|V<br>~~ee~~|VGS= 0V, ID= 1mA<br>~~ee~~|
|Zero Gate Voltage Drain Current<br>~~a~~|IDSS<br>~~a~~<br>~~ee~~|<br>~~a~~<br>~~ee~~|<br>~~a~~|1<br>~~a~~|µA<br>~~a~~|VDS= 80V, VGS= 0V<br>~~a~~|
|Gate-Source Leakage<br>~~a~~|IGSS<br>~~a~~<br>~~ee~~|<br>~~a~~<br>~~ee~~|<br>~~a~~|±100<br>~~a~~|nA<br>~~a~~|VGS= ±16V, VDS= 0V<br>~~a~~|
|**ON CHARACTERISTICS(Note 7)**<br>~~ee~~<br>~~I(OO~~|||||||
|Gate Threshold Voltage<br>~~DD~~|VGS(TH)<br>~~DD~~|1<br>~~DD~~|<br>~~DD~~<br>~~I~~|3<br>~~DD~~<br>~~(OO~~|V<br>~~DD~~<br>~~(OO~~|VDS= VGS, ID= 250µA<br>~~DD~~<br>~~(OO~~|
|Static Drain-Source On-Resistance<br>~~ee~~|RDS(ON)<br>~~ee~~|<br>~~ee~~|13.7<br>~~I ~~<br>~~ee~~|17.4<br> ~~(OO~~<br>~~ee~~|mΩ<br>~~(OO~~<br>~~ee~~<br>~~a~~|VGS= 10V, ID= 17A<br>~~(OO~~<br>~~ee~~|
|||<br>~~ee~~|23.8<br>~~ee~~|30.3<br>~~ee~~||VGS= 4.5V, ID= 10A<br>~~ee~~|
|Diode Forward Voltage<br>~~a~~|VSD<br>~~a~~|<br>~~a~~|<br>~~a~~|1.3<br>~~a~~|V<br>~~a~~<br>~~a~~|VGS= 0V, IS= 17A<br>~~a~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~a~~<br>~~a~~<br>~~eeesee~~|||||||
|Input Capacitance<br>~~es~~|Ciss<br>~~es~~<br>~~ee~~|<br>~~es~~<br>~~ee~~|1986<br>~~es~~<br>~~es~~|<br>~~es~~<br>~~ee~~|pF<br>~~a~~<br>~~es~~<br>~~ee~~|VDS= 50V, VGS= 0V,<br>f = 1MHz<br>~~es~~|
|Output Capacitance<br>~~es~~|Coss<br>~~es~~<br>~~ee~~|<br>~~es~~<br>~~ee~~|333<br>~~es~~<br>~~es~~|<br>~~es~~<br>~~ee~~|||
|Reverse Transfer Capacitance<br>~~es~~|Crss<br>~~es~~<br>~~ee~~|<br>~~es~~<br>~~ee~~|20<br>~~es~~<br>~~es~~|<br>~~es~~<br>~~ee~~|||
|Gate Resistance<br>~~——————~~|RG<br>~~ee~~|<br>~~ee ~~|1.17<br> ~~es ~~|<br> ~~ee~~<br>~~e~~|Ω<br>~~ee~~<br>~~e~~|VDS= 0V, VGS= 0V, f = 1MHz<br>~~ee~~|
|Total Gate Charge(VGS= 4.5V)<br>~~——————~~|Qg||14.4|<br>~~e~~|nC<br>~~e~~<br>~~ee~~|VDS= 50V, ID= 20A<br>~~ee~~<br>~~ee~~|
|Total Gate Charge(VGS= 10V)<br>~~——————~~|Qg||28.6|<br>~~e~~|||
|Gate-Source Charge<br>~~——————~~|Qgs||5.2|<br>~~e~~|||
|Gate-Drain Charge<br>~~——————~~<br>~~**e**e~~|Qgd<br>~~ee~~|<br>~~ee~~|8.2|<br>~~e~~|||
|Turn-On Delay Time<br>~~——————~~<br>~~**e**e~~|tD(ON)<br>~~ee~~|<br>~~ee~~|9.8|<br>~~e~~|ns<br>~~e~~<br>~~ee~~<br>~~s~~|VDD= 50V, VGS= 10V,<br>RG= 11Ω, ID= 20A<br>~~ee~~<br>~~ee~~<br>~~s~~|
|Turn-On Rise Time<br>~~**e**e~~|tR<br>~~ee~~|<br>~~ee~~|16.3||||
|Turn-Off Delay Time<br>~~**e**e~~|tD(OFF)<br>~~ee~~|<br>~~ee~~<br>~~s~~|32.6<br>~~s~~|<br>~~s~~|||
|Turn-Off Fall Time<br>~~**e**e~~|tF<br>~~ee~~|<br>~~ee~~<br>~~s~~|21.6<br>~~s~~|<br>~~s~~|||
|BodyDiode Reverse RecoveryTime<br>~~**e**e ~~|tRR<br> ~~ee~~<br>~~lr~~|—<br>~~ee~~<br>~~s~~<br>~~lrtll~~|40.6<br>~~s~~<br>~~tll~~|—<br>~~s~~<br>~~tll~~|ns<br>~~ee~~<br>~~s~~<br>~~tll~~|IF= 17A, di/dt = 100A/μs<br>~~ee~~<br>~~s~~|
|Body Diode Reverse Recovery Charge<br>~~Se~~|QRR<br>~~Se~~<br>~~lr~~|—<br>~~Se~~<br>~~lrtll~~|58.1<br>~~Se~~<br>~~tll~~|—<br>~~Se~~<br>~~tll~~|nC<br>~~Se~~<br>~~tll~~|IF= 17A, di/dt = 100A/μs<br>~~Se~~|



6. Thermal resistance from junction to solder point (on the exposed drain pin). 

7. Short duration pulse test used to minimize self-heating effect. 

8. Guaranteed by design. Not subject to product testing. 

9. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 

2 of 7 **www.diodes.com** 

DMTH10H017LPD Document number: DS40752  Rev. 4 - 2 

April 2019 © Diodes Incorporated 

**DMTH10H017LPD** 

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30.0   20<br> VGS = 4.5V  VDS = 5V<br>25.0    VGS = 5.0V<br> VGS = 6.0V  15<br>20.0    VGS = 10V<br>15.0   Fo 10  foye<br> VGS = 4.0V<br>10.0<br>5.0   fof 5  TJ T= 150J = 175 ℃ ℃ TJ = 85 ℃<br>TJ = 125 ℃ TJ = 25 ℃<br> VGS = 3.5V  TJ = -55 ℃<br>P o A}<br>0.0   0<br>|—_—_—— Ly<br>0  1  2  3  4  5  2  2.5  3  3.5  4  4.5  5<br>VDS, DRAIN-SOURCE VOLTAGE (V)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic  Figure 2. Typical Transfer Characteristic<br>0.03  0.2<br> VGS = 4.5V<br>0.025  0.15<br>0.02  0.1<br>ID = 10A<br>0.015   VGS = 6.0V  0.05  ID = 17A<br> VGS = 10V<br>0.01  0<br>0  5  10  15  20  25  30  0  4  8  12  16  20<br>Figure 3. Typical On-Resistance vs. Drain Current ID, DRAIN-SOURCE CURRENT (A)   VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 4. Typical Transfer Characteristic<br>and Gate Voltage<br>0.032  2.2<br>0.03  VGS = 10V<br>0.028  ee ee TJ = 175 ℃ 2  Ty Ti  VGS = 10V, ID = 17A  yY<br>0.026  —— — TJ = 150 ℃ 1.8  AY<br>0.024<br>0.022  TJ = 125 ℃ 1.6<br>0.02  1.4<br>0.018  TJ = 85 ℃<br>0.016  1.2<br>0.014   VGS = 6.0V, ID = 10A<br>1<br>0.012  SA TJ = 25 ℃<br>0.01  0.8   VGS = 4.5V, ID = 10A<br>0.008  SS S TJ = -55 ℃ 0.6  et<br>0.006<br>0.004  po 0.4  CCE<br>0  5  10  15  20  25  30  -50 -25  0  25  50  75  100 125 150 175<br>ID, DRAIN CURRENT (A)  TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 5. Typical On-Resistance vs. Drain Current  Figure 6. On-Resistance Variation with Temperature<br>and Temperature<br>, DRAIN CURRENT (A)<br>, DRAIN CURRENT (A) ID ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)  , DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON) DS(ON)<br>R R<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>,  DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>DS(ON) R<br>R<br>**----- End of picture text -----**<br>


3 of 7 **www.diodes.com** 

DMTH10H017LPD Document number: DS40752  Rev. 4 - 2 

April 2019 © Diodes Incorporated 

**DMTH10H017LPD** 

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0.044<br>0.04<br> VGS = 4.5V, ID = 10A GS = 4.5V, ID = 10A = 4.5V, ID = 10A D = 10A = 10A<br>0.036  |al|al|| | | levava<br>0.032   VGS = 6.0V, ID = 10A GS = 6.0V, ID = 10A = 6.0V, ID = 10A D = 10A = 10A<br>0.028  a<br>| | K Y<br>0.024  nursed<br>0.02<br>0.016  aaTaeEE TTTaeEE TTEE TT TT<br>0.012<br> VGS = 10V, ID = 17A GS = 10V, ID = 17A = 10V, ID = 17A D = 17A = 17A<br>0.008  teii t I ||<br>0.004  fF | | | | ft ft | ft |<br>-50 -25  0  25  50  75  100 125 150 175<br>TJ, JUNCTION TEMPERATURE (J, JUNCTION TEMPERATURE (, JUNCTION TEMPERATURE ( ℃ )<br>Figure 7. On-Resistance Variation with Temperature<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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0.044  3<br>0.04  2.8<br> VGS = 4.5V, ID = 10A GS = 4.5V, ID = 10A = 4.5V, ID = 10A D = 10A = 10A<br>0.036  |al|al|| | | levava 2.6  wie| |]ee| tT<br>0.032   VGS = 6.0V, ID = 10A GS = 6.0V, ID = 10A = 6.0V, ID = 10A D = 10A = 10A  2.4  ID = 1mA<br>0.028  a 2.2<br>| | K Y aaa NN | |<br>0.024  nursed 2  TTT ENKEEE<br>0.02  1.8  ID = 250μA<br>0.016  aaTaeEE TTTaeEE TTEE TT TT 1.6  Se)| NNSKE<br>0.012  1.4<br> VGS = 10V, ID = 17A GS = 10V, ID = 17A = 10V, ID = 17A D = 17A = 17A<br>0.008  teii t I || 1.2  PN a eeeeeeN<br>0.004  fF | | | | ft ft | ft | 1  Ft | tt ft ft tL<br>-50 -25  0  25  50  75  100 125 150 175  -50 -25  0  25  50  75  100 125 150 175<br>TJ, JUNCTION TEMPERATURE (J, JUNCTION TEMPERATURE (, JUNCTION TEMPERATURE ( ℃ )  TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 7. On-Resistance Variation with Temperature  Figure 8. Gate Threshold Variation vs.<br>JunctionTemperature<br>30  10000<br>VGS = 0V  f = 1MHz<br>Ciss<br>25  e e ie =<br>1000   Coss<br>20  T T aoe<br>15  TA = 175 [o] C  100<br>IP N N<br>TA = 150 [o] C<br>10  TA = 125 [o] C  Crss<br>TA = 85 [o] C  10<br>5  TA = 25 [o] C  JL f+ ee<br>TA= -55 [o] C<br>0  DT) 1   pT<br>0  0.3  0.6  0.9  1.2  0  10  20  30  40  50  60  70  80  90 100<br>VSD, SOURCE-DRAIN VOLTAGE (V)  VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current  Figure 10. Typical Junction Capacitance<br>10  1000<br>R<br>DS(ON)<br>Limited<br>8  / | 100  SSS SS a SSSA ee<br>10<br>6<br>PW = 1µs<br>1<br>PW = 10µs<br>4  PW = 100µs<br>0.1<br>2  VDS = 50V, ID = 20A  TTSingle Pulse J(Max) C = 25= 175 ℃ ℃ PPWW = 1ms  = 10ms<br>0.01  DUT on Infinite Heatsink  PW<br>VGS = 10V<br>0  Anne 0.001  eee Sti<br>0  5  10  15  20  25  30  0.1  1  10  100  1000<br>Qg (nC)  VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11. Gate Charge  Figure 12. SOA, Safe Operation Area<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


4 of 7 **www.diodes.com** 

DMTH10H017LPD Document number: DS40752  Rev. 4 - 2 

April 2019 © Diodes Incorporated 

**DMTH10H017LPD** 

**==> picture [412 x 268] intentionally omitted <==**

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1<br>e D=0.7  er eee<br>D=0.5<br>by CCE D=0.9  oT<br>D=0.3<br>TMT eA in TCE<br>PATI TIT TL PUTT TUTE ETT<br>0.1  I A A<br>D=0.1<br>PERE I | Af ttt<br>S t<br>E D=0.05  TA ToT<br>EE 27 A<br>D=0.02<br>e A TTT<br>0.01<br>D=0.01<br>ey ee<br>D=0.005<br>eycee<br>0 0 RθJC (t) = r(t) * RθJC Hil<br>D=Single Pulse  RθJC = 1.6 ℃ /W<br>Duty Cycle, D = t1/t2<br>0.001<br>clu FCCC i<br>1E-06  1E-05  0.0001  0.001  0.01  0.1  1  10<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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DMTH10H017LPD Document number: DS40752  Rev. 4 - 2 

April 2019 © Diodes Incorporated 

**DMTH10H017LPD** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **PowerDI5060-8 (Type E)** 

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D<br>D1<br>0(4x)<br>x<br>E1 E A1<br>y Seating Plane<br>e<br>c<br>1<br>Ø 1.000 Depth 0.07± 0.030<br>01(4x)<br>b1(8x)<br>DETAIL A<br>b(8x) e/2<br>1<br>L D3 k b2(2x)<br>k1 A<br>L4<br>E2 D2<br>M DETAIL A<br>D2<br>La L1<br>**----- End of picture text -----**<br>


|**PowerDI5060-8**<br>**(Type E)**|**PowerDI5060-8**<br>**(Type E)**|**PowerDI5060-8**<br>**(Type E)**|**PowerDI5060-8**<br>**(Type E)**|
|---|---|---|---|
|**Dim**|**Min**|**Max**|**Typ**|
|**A**|0.90|1.10|**Typ**<br>1.00|
|**A1**|0|0.05|0.02|
|**b**|0.33|0.51|0.41|
|**b1 **|0.300|0.366|0.333|
|**b2 **|0.20|0.35|0.25|
|**c**|0.23|0.33|0.277|
|**D**|5.15BSC|||
|**D1**|4.85|4.95|4.90|
|**D2**|1.40|1.60|1.50|
|**D3**|-|-|3.98|
|**E**|6.15BSC|||
|**E1**<br>**E2**|5.75<br>356|5.85<br>3.76|5.80<br>366|
|**E2**|3.56|3.76|3.66|
|**e**|1.27BSC|||
|**k**|-|-|1.27|
|**k1**|0.56|-|-|
|**L**<br>**La**<br>**L1**|0.51<br>0.51<br>005|0.71<br>0.71<br>0.20|0.61<br>0.61<br>0.175|
|**L1**<br>**L4**|0.05<br>-|0.20<br>-|0.175<br>0.125|
|**M**|3.50|3.71|3.605|
|**x**|-|-|1.400|
|**y**|-|-|1.900|
|**y**<br>**θ**|10°|12°|11°|
|**θ1**|6°|8°|7°|
|**All Dimensions in mm**||||



## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**PowerDI5060-8 (Type E)** 

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X4<br>8<br>Y1<br>X3 X2<br>Y2<br>Y3<br>G1<br>X1<br>Y(4x)<br>1<br>G<br>X C<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value**<br>**(in mm)**|
|---|---|
|**C**<br>**G**|1.270<br>0.660|
|**G**|0.660|
|**G1**|0.820|
|**X**|0.610|
|**X1**|3.910|
|**X2**|1.650|
|**X3**|1.650|
|**X4**|4.420|
|**Y**|1.270|
|**Y1**|1.020|
|**Y2**|3.810|
|**Y3**|6.610|



6 of 7 **www.diodes.com** 

DMTH10H017LPD Document number: DS40752  Rev. 4 - 2 

April 2019 © Diodes Incorporated 

**DMTH10H017LPD** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2019, Diodes Incorporated 

**www.diodes.com** 

7 of 7 **www.diodes.com** 

DMTH10H017LPD Document number: DS40752  Rev. 4 - 2 

April 2019 © Diodes Incorporated