DMT6011LPDW-13

**DMT6011LPDW** 

## **60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON)**|**ID **<br>**TC = +25°C**|
|60V|14mΩ@VGS= 10V|40A|
||22mΩ@VGS= 4.5V|33A|



## **Features** 

- 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application 

- Thermally Efficient Package-Cooler Running Applications 

- High Conversion Efficiency 

- Low RDS(ON) – Minimizes On State Losses 

- Low Input Capacitance 

- Fast Switching Speed 

- Wettable Flank for Improved Optical Inspection 

- **ESD Protected Gate** 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative.** 

**https://www.diodes.com/quality/product-definitions/** 

## **Description and Applications** 

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. 

- Wireless Charging 

- DC-DC Converters 

- Power Management 

## **Mechanical Data** 

- Case: PowerDI[®] 5060-8 

- Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminal Finish – Matte Tin Annealed over Copper Leadframe; Solderable per MIL-STD-202, Method 208 

- Weight: 0.097 grams (Approximate) 

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PowerDI5060-8/SWP (Type UXD)  S1 U | D1<br>G1 D1<br>S2 D2<br>ESD PROTECTED (A)0 i G1 D1 ©D2 G2 11I I I D2<br>Pin1  Gate Protection Diodes  $1 Gate Protection Diodes  $2 = 3<br>Top View  Bottom View  Internal Schematic  Top View<br>Pin Configuration<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMT6011LPDW-13|PowerDI5060-8/SWP(Type UXD)|2,500/Tape &Reel|



Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and 

Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

> = Manufacturer’s Marking T60 Ji 11LDW = Product Type Marking Code YYWW = Date Code Marking ~~—~~ YY = Last Two Digits of Year (ex: 21 = 2021) WW = Week Code (01 to 53) 

_PowerDI is a registered trademark of Diodes Incorporated._ 

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DMT6011LPDW Document number: DS43097  Rev. 2 - 2 

March 2021 © Diodes Incorporated 

**DMT6011LPDW** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|60|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current, VGS= 10V (Note 6)||TC= +25°C<br>TC= +70°C|ID|40<br>32|A|
|Continuous Drain Current, VGS= 10V (Note 5)|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|10.3<br>8.2|A|
|Pulsed Drain Current(10µs Pulse,DutyCycle = 1%)|||IDM|160|A|
|Maximum Continuous BodyDiode Forward Current(Note 6)|||IS|40|A|
|Pulsed Body Diode Forward Current (10µs Pulse, Duty Cycle = 1%)|||ISM|160|A|
|Avalanche Current L = 0.3mH|||IAS|16.2|A|
|Avalanche EnergyL = 0.3mH|||EAS|39.4|mJ|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5)|TA= +25°C|PD|2.5|W|
|Thermal Resistance,Junction to Ambient(Note 5)|SteadyState|RθJA|50|°C/W|
|Total Power Dissipation(Note 6)|TC= +25°C|PD|37.9|W|
|Thermal Resistance,Junction to Case(Note 6)||RθJC|3.3|°C/W|
|Operatingand Storage Temperature Range||TJ, TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

||||||||
|---|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 7)**|||||||
|Drain-Source Breakdown Voltage|BVDSS|60|—|—|V|VGS= 0V,ID= 1mA|
|Zero Gate Voltage Drain Current|IDSS|—|—|1|µA|VDS= 48V,VGS= 0V|
|Gate-Source Leakage|IGSS|—|—|±10|µA|VGS= ±20V,VDS= 0V|
|**ON CHARACTERISTICS(Note 7)**|||||||
|Gate Threshold Voltage<br>~~=~~|VGS(TH)<br>~~=~~|1.4<br>~~=~~|—<br>~~=~~|2.5<br>~~=~~|V<br>~~=~~|VDS= VGS,ID= 250µA<br>~~=~~|
|Static Drain-Source On-Resistance<br>~~=~~|RDS(ON)<br>~~=~~|—<br>~~=~~|10.8<br>~~=~~|14<br>~~=~~|mΩ<br>~~=~~|VGS= 10V,ID= 10A<br>~~=~~|
|||—<br>~~=~~|14.7<br>~~=~~|22<br>~~=~~||VGS= 4.5V,ID= 5A<br>~~=~~|
|Diode Forward Voltage<br>~~=~~|VSD<br>~~=~~|—<br>~~=~~|0.7<br>~~=~~|1.2<br>~~=~~<br>~~e~~|V<br>~~=~~<br>~~e~~|VGS= 0V,IS= 1A<br>~~=~~<br>~~ee~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~ee~~|||||||
|Input Capacitance<br>~~—~~|Ciss<br>~~—~~|—<br>~~—~~|1072<br>~~—~~|—<br>~~—~~<br>~~e~~|pF<br>~~—~~<br>~~e~~|VDS= 30V, VGS= 0V,<br>f = 1MHz<br>~~—~~<br>~~ee~~|
|Output Capacitance<br>~~—~~|Coss<br>~~—~~|—<br>~~—~~|382<br>~~—~~|—<br>~~—~~<br>~~e~~|||
|Reverse Transfer Capacitance<br>~~—~~|Crss<br>~~—~~|—<br>~~—~~|38<br>~~—~~|—<br>~~—~~<br>~~e~~|||
|Gate Resistance|RG|—|1.4|—<br>~~e~~|Ω<br>~~e~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~ee~~|
|Total Gate Charge(VGS= 4.5V)|Qg|—|11.8|—<br>~~e~~|nC<br>~~e~~<br>~~ee~~|VDD= 30V, ID= 10A<br>~~ee~~<br>~~ee~~|
|Total Gate Charge(VGS= 10V)|Qg|—|22.2|—|||
|Gate-Source Charge|Qgs|—|3.8|—|||
|Gate-Drain Charge<br>~~————~~|Qgd|—|5.0|—<br>~~ee~~|||
|Turn-On DelayTime<br>~~————~~|tD(ON)|—|8.2|—<br>~~ee~~|ns<br>~~ee~~|VGS= 10V, VDD= 30V,<br>RG= 6Ω, ID= 10A<br>~~ee~~|
|Turn-On Rise Time<br>~~————~~|tR|—|3.9|—<br>~~ee~~|||
|Turn-Off DelayTime<br>~~————~~|tD(OFF)|—|21.2|—<br>~~ee~~|||
|Turn-Off Fall Time<br>~~————~~|tF|—|15.7|—<br>~~ee~~|||
|Reverse RecoveryTime<br>~~————~~<br>~~ee~~|tRR<br>~~ee~~|—<br>~~ee~~|30.6<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~|IF= 10A, di/dt = 100A/µs<br>~~ee~~<br>~~ee~~|
|Reverse RecoveryCharge<br>~~————~~<br>~~ee~~|QRR<br>~~ee~~|—<br>~~ee~~|21.9<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|nC<br>~~ee~~<br>~~ee~~||



- Notes: 5. Device mounted on FR-4 substrate PC board, 2oz. copper, with thermal bias to bottom layer 1inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 

   8. Guaranteed by design. Not subject to product testing. 

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DMT6011LPDW Document number: DS43097  Rev. 2 - 2 

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**DMT6011LPDW** 

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30<br>VDS = 5.0V<br>25 O f<br>20<br>e y<br>15<br>f TJ = 125℃ f<br>10 TJ = 85℃<br>TJ = 150℃<br>TJ = 25℃<br>5 ian<br>of f<br>TJ = -55℃<br>0 DW |<br>1 2 3 4<br>VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 2. Typical Transfer Characteristic<br>, DRAIN CURRENT (A)IDD<br>IDD<br>**----- End of picture text -----**<br>


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30.0 30<br>VGS = 10V<br>25.0 fe 25<br>VGS = 6.0V VGS = 3.5V<br>20.0 VGS = 4.5V 20<br>a<br>VGS =3.3V<br>15.0 15<br>fo<br>10.0 10<br>VGS = 3.0V<br>5.0 | 4 7 | 5<br>| A<br>0.0 Vann 0<br>0 1 2 3 4 5 1<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic<br>0.018 0.1<br>0.09<br>0.016 | | | VGS = 4.5VGS = 4.5V= 4.5V | |<br>0.08<br>0.014 S e e 0.07<br>0.06<br>0.012<br>ptt VGS GS  | = 10V tt 0.05<br>0.01 0.04<br>SS ee<br>0.03<br>0.008<br>Poy yf TT<br>0.02<br>ID = 5A<br>0.006 TT EE EE 0.01<br>0.004 Pf J | ff 0<br>0<br>0 5 10 15 20 25 30<br>ID, DRAIN-SOURCE CURRENT (A) D, DRAIN-SOURCE CURRENT (A) , DRAIN-SOURCE CURRENT (A)<br>, DRAIN CURRENT (A)ID , DRAIN CURRENT (A)IDD<br>, DRAIN-SOURCE ON-RESISTANCE (Ω) , DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON) DS(ON)<br>R R<br>**----- End of picture text -----**<br>


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0.018 0.1<br>0.016 | | | VGS = 4.5VGS = 4.5V= 4.5V | | 0.09 sf ID = 10A Pt | |<br>0.08<br>0.014 S e e 0.07 ao aekeeeee<br>0.06 |<br>0.012<br>ptt VGS GS  | = 10V tt 0.05 Pip | |ttt<br>0.01 0.04<br>SS ee<br>0.03<br>0.008<br>Poy yf TT CA<br>0.02<br>0.006 TT EE EE 0.01 AS ID = 5A EEE<br>0.004 Pf J | ff 0 FEE EPL [LEST]<br>0 2 4 6 8 10 12 14 16 18 20<br>0 5 10 15 20 25 30<br>ID, DRAIN-SOURCE CURRENT (A) D, DRAIN-SOURCE CURRENT (A) , DRAIN-SOURCE CURRENT (A)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 4. Typical Transfer Characteristic<br>Figure 3. Typical On-Resistance vs. Drain Current and<br>Gate Voltage<br>0.02 2.2<br>0.018 VGS = 10V TJ = 125℃ TJ = 150℃ 2<br>PT eT TLE<br>0.016<br>1.8<br>0.014 TJ = 85℃<br>0.012 SS 1.6 VGS = 10V, ID = 10A<br>TJ = 25℃<br>0.01 1.4<br>a ug<br>0.008 TJ = -55℃ 1.2<br>0.006 H T Ca VGS = 4.5V, ID = 5A<br>1<br>0.004<br>0.0020 SPEER ee 0.80.6 eesFTE EttorLL Ld<br>0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150<br>ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (℃)<br>Figure 5. Typical On-Resistance vs. Drain Current and Figure 6. On-Resistance Variation with Junction<br>Junction Temperature Temperature<br>, DRAIN-SOURCE ON-RESISTANCE (Ω) , DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON) DS(ON)<br>R R<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>DS(ON) R<br>R<br>**----- End of picture text -----**<br>


Figure 5. Typical On-Resistance vs. Drain Current and Junction Temperature 

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DMT6011LPDW Document number: DS43097  Rev. 2 - 2 

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**DMT6011LPDW** 

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0.024 3<br>0.022<br>0.02 2.5<br>VGS = 4.5V, ID = 5A ra<br>0.018 ae ERR<br>0.016 2 ID = 1mA<br>0.014<br>0.012 et e 1.5 B e<br>0.01 oe S e, ID = 250μA<br>0.008 VGS = 10V, ID = 10A 1<br>0.006 e ee<br>0.004 | | | | rT [rT] 0.5<br>PF H =e<br>0.002<br>0 EEE 0 PEt Te Ey<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (℃) TJ, JUNCTION TEMPERATURE (℃)<br>Figure 7. On-Resistance Variation with Junction  Figure 8. Gate Threshold Variation vs. Junction<br>Temperature<br>, GATE THRESHOLD VOLTAGE (V)<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>GS(TH)<br>DS(ON) V<br>R<br>**----- End of picture text -----**<br>


Figure 7. On-Resistance Variation with Junction Temperature 

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30 10000<br>VGS = 0V f = 1MHz<br>25 ee || ee = ———— Ciss<br>1000<br>20 eee || —_————<br>Coss<br>15 eee | 100 S s<br>10 TJ = 150 [o] C Hh o N Crss<br>TJ = 125 [o] C 10<br>5 TJ = 85 [o] C<br>li —<br>TJ = 25 [o] C TJ = -55 [o] C<br>0 ayLD) 1 ———f++ —<br>0 0.3 0.6 0.9 1.2 1.5 0 10 20 30 40 50 60<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current Figure 10. Typical Junction Capacitance<br>10 1000<br>R<br>DS(ON)<br>Limited<br>8 100<br>6 10 PW = 10µsW = 10µs = 10µs<br>PW = 100µsW = 100µs = 100µs<br>PW = 1msW = 1ms = 1ms<br>PW = 10msW = 10ms = 10ms<br>4 VDS = 30V, ID = 10A 1 PW = 100msW = 100ms = 100ms<br>TJ(Max) = 150℃J(Max) = 150℃= 150℃℃ PW = 1sW = 1s = 1s<br>TC = 25℃C = 25℃ = 25℃℃<br>2 f—— 0.1 Single Pulse a<br>DUT on Infinite<br>Heatsink<br>0 0.01 VGS = 10VGS = 10V = 10V ee<br>0 2 4 6 8 10 12 14 16 18 20 22 24 0.1 1 10<br>Qg (nC) VDS, DRAIN-SOURCE VOLTAGE (V)DS, DRAIN-SOURCE VOLTAGE (V), DRAIN-SOURCE VOLTAGE (V)<br>Figure 11. Gate Charge<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>IDD<br>**----- End of picture text -----**<br>


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1000<br>R<br>DS(ON)<br>Limited<br>100<br>10 PW = 10µsW = 10µs = 10µs<br>PW = 100µsW = 100µs = 100µs<br>PW = 1msW = 1ms = 1ms<br>PW = 10msW = 10ms = 10ms<br>1<br>PW = 100msW = 100ms = 100ms<br>TJ(Max) = 150℃J(Max) = 150℃= 150℃℃ PW = 1sW = 1s = 1s<br>TC = 25℃C = 25℃ = 25℃℃<br>0.1 Single Pulse a<br>DUT on Infinite<br>Heatsink<br>0.01 VGS = 10VGS = 10V = 10V ee<br>0.1 1 10 100<br>VDS, DRAIN-SOURCE VOLTAGE (V)DS, DRAIN-SOURCE VOLTAGE (V), DRAIN-SOURCE VOLTAGE (V)<br>Figure 12. SOA, Safe Operation Area<br>, DRAIN CURRENT (A)<br>IDD<br>**----- End of picture text -----**<br>


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DMT6011LPDW Document number: DS43097  Rev. 2 - 2 

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**DMT6011LPDW** | 

## LIES. 

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1<br>aaa ee —asiil ntiTT<br>D=0.5 D=0.9<br>D=0.7<br>D=0.3<br>aei mise,e aii Seg LEae mati mt |mt medi at|<br>Pani al 0 0<br>LAT IN<br>D=0.1<br>et EUIIE TRUTIECTTE TETIET<br>0.1<br>D=0.05<br>St ZA LILI LINE UM LIM ITLL UTI<br>CE TeHE eee ECR EHSdPERE<br>2|<br>E /E<br>D=0.02<br>7,”iam<br>D=0.01<br>D=0.005<br>0.01 D=Single Pulse<br>Aas SRE RR<br>A EE<br>e e<br>Po etc Et PERE<br>0||| ||<br>RθJC (t) = r(t) * RθJC<br>RθJC = 3.3℃/W<br>Duty Cycle, D = t1/t2<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 100000 1000000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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**DMT6011LPDW** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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PowerDI5060-8/SWP (Type UXD)<br>D<br>PowerDI5060-8/SWP<br>8 D1 5 (Type UXD)<br>Dim  Min  Max  Typ<br>A  0.90 1.10 1.00<br>A1  0.00 0.05 --<br>b  0.30 0.50 0.41<br>b2  0.20 0.35 0.25<br>E1 E b4  0.25REF<br>A1<br>1.900 1.400 c Seating Plane D c 0.2305.105.330 BSC 0.277<br>e D1  4.70 5.10 4.90<br>D2  1.46 1.66 1.55<br>D3  3.78 4.18 3.98<br>1 4 E  6.40 BSC<br>Ø 1.000 Depth 0.07± 0.030 DETAIL A E1  5.60 6.00 5.80<br>E2  3.46 3.86 3.66<br>b(8x) e/2 E2a  4.195 4.595 4.395<br>1 e  1.27BSC<br>L k  1.05 --  --<br>L  0.635 0.835 0.735<br>D3 k oon La  0.635 0.835 0.735<br>b2(2x)<br>L1  0.200 0.400 0.300<br>M  3.205 4.005 3.605<br>W  0.025 0.225 0.125<br>E2 D2 D2 W A θ  10°  12°  11°<br>E3 M θ1  6°  8°  7°<br>All Dimensions in mm<br>DETAIL A<br>La<br>8<br>‘Lot b4(8x) L1<br>4x0<br>4x0<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**PowerDI5060-8/SWP (Type UXD)** 

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X2 Dimensions  Value<br>(in mm)<br>fh Y1 = C  1.270<br>G  0.660<br>G1  0.820<br>X  0.610<br>X1  1.720<br>Y2 X1 X1<br>X2  4.420<br>Y3 Y  1.270<br>Y1  1.020<br>G1<br>jee Y2  3.810<br>C Y3 6.610<br>Y(4x)<br>i ==<br>AO! X(8x) G<br>**----- End of picture text -----**<br>


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## **IMPORTANT NOTICE** 

1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 

3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and liabilities. 

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