DMT4014LDV-7

**DMT4014LDV** C—si*”d **40V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON) Max**|**ID Max**<br>**TC = +25°C**|
|40V|19mΩ @ VGS= 10V|26.5A|
||29mΩ @ VGS= 4.5V|21.8A|



## **Features and Benefits** 

- 100% Unclamped Inductive Switching (UIS) Test in Production — Ensures More Reliable and Robust End Application 

- Low RDS(ON) — Ensures On-State Losses Are Minimized 

- Low On-Resistance 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Description and Applications** 

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

- Wireless Charging 

- DC-DC Converters 

- Power Management 

- **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/** 

## **Mechanical Data** 

- Case: PowerDI[®] 3333-8 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminal Connections Indicator: See Diagram 

- Terminals: Finish — Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

- Weight: 0.072 grams (Approximate) 

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PowerDI3333-8 (Type UXC)<br>D1<br>D1<br>D2<br>D2<br>S1<br>G1<br>S6 S2  9.)<br>G2  Pin 1<br>Top View  Bottom View  Internal Schematic<br> Information (Note 4)<br>Part Number Case Packaging<br>DMT4014LDV-7  PowerDI3333-8 (Type UXC) 2,000/Tape & Reel<br>DMT4014LDV-13  PowerDI3333-8 (Type UXC) 3,000/Tape & Reel<br>Notes:        1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.<br>                   2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and<br>Lead-free.<br>                   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and<br>    <1000ppm antimony compounds.<br>                   4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.<br> Information<br>PowerDI3333-8 (Type UXC)<br>T14 = Product Type Marking Code<br>YYWW = Date Code Marking<br>YY = Last Two Digits of Year (ex: 20 = 2020)<br>WW = Week Code (01 to 53)<br>T14<br>YYWW<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

Notes:        1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

_PowerDI is a registered trademark of Diodes Incorporated._ 

1 of 7 **www.diodes.com** 

DMT4014LDV Document number: DS42919  Rev. 2 - 2 

December 2020 © Diodes Incorporated 

**DMT4014LDV** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|40|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current (Note 6) VGS= 10V||TC= +25°C<br>TC= +70°C|ID|26.5<br>21.2|A|
|Continuous Drain Current (Note 6) VGS= 10V|Steady State|TA= +25°C<br>TA= +70°C|ID|8.5<br>6.8|A|
|Pulsed Drain Current(10µs Pulse,DutyCycle = 1%)|||IDM|100|A|
|Maximum Continuous BodyDiode Forward Current(Note 6)|||IS|2.7|A|
|Pulsed BodyDiode Forward Current(10µs Pulse,DutyCycle = 1%)|||ISM|100|A|
|Avalanche Current,L = 0.1mH|||IAS|19.8|A|
|Avalanche Energy,L = 0.1mH|||EAS|19.6|mJ|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5)|TA= +25°C|PD|1.0|W|
|Thermal Resistance,Junction to Ambient(Note 5)|SteadyState|RJA|124|°C/W|
|Total Power Dissipation(Note 6)|TA= +25°C|PD|2.1|W|
|Thermal Resistance,Junction to Ambient(Note 6)|SteadyState|RJA|61|°C/W|
|Thermal Resistance, Junction to Case(Note 6)||RJC|6.2|°C/W|
|Operatingand Storage Temperature Range||TJ, TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS**(Note 7)|||||||
|Drain-Source Breakdown Voltage|BVDSS|40|—|—|V|VGS= 0V,ID= 1mA|
|Zero Gate Voltage Drain Current|IDSS|—|—|1|µA|VDS= 32V,VGS= 0V|
|Gate-Source Leakage|IGSS|—|—|±100|nA|VGS= ±20V,VDS= 0V|
|**ON CHARACTERISTICS**(Note 7)<br>~~a~~|||||||
|Gate Threshold Voltage<br>~~a~~<br>~~——————————~~|VGS(TH)<br>~~——————————~~|1<br>~~——————————~~|—<br>~~——————————~~|3<br>~~——————————~~|V<br>~~——————————~~|VDS= VGS,ID= 250μA<br>~~——————————~~|
|Static Drain-Source On-Resistance<br>~~a~~<br>~~——————————~~|RDS(ON)<br>~~——————————~~<br>~~GOD~~|—<br>~~——————————~~|14.7<br>~~——————————~~|19<br>~~——————————~~|mΩ<br>~~——————————~~|VGS= 10V,ID= 20A<br>~~——————————~~|
|||—<br>~~——————————~~<br>~~GOD OS~~|21.2<br>~~——————————~~<br>~~OS~~|29<br>~~——————————~~<br>~~GO~~||VGS= 4.5V,ID= 15A<br>~~——————————~~|
|Diode Forward Voltage<br>~~a~~<br>~~RN~~|VSD<br>~~RN~~<br>~~GOD~~|—<br>~~RN~~<br>~~GOD OS~~|1.0<br>~~RN~~<br>~~OS~~|1.2<br>~~RN~~<br>~~GO~~|V<br>~~RN~~|VGS= 0V,IS= 20A<br>~~RN~~|
|**DYNAMIC CHARACTERISTICS**(Note 8)<br>~~GOD OSGO~~|||||||
|Input Capacitance<br>~~ne~~|Ciss<br>~~ne~~|—<br>~~ne~~|750<br>~~ne~~|—<br>~~ne~~|pF<br>~~ne~~|VDS= 20V, VGS= 0V,<br>f = 1MHz<br>~~ne~~|
|Output Capacitance<br>~~ne~~|Coss<br>~~ne~~|—<br>~~ne~~|225<br>~~ne~~|—<br>~~ne~~|pF<br>~~ne~~||
|Reverse Transfer Capacitance<br>~~ne~~|Crss<br>~~ne~~|—<br>~~ne~~|21<br>~~ne~~|—<br>~~ne~~|pF<br>~~ne~~||
|Gate Resistance|Rg|—|1.1|—|Ω|VDS= 0V,VGS= 0V,f = 1MHz|
|Total Gate Charge(VGS= 4.5V)|Qg|—|5.7|—|nC|VDS= 20V, ID= 20A|
|Total Gate Charge(VGS= 10V)|Qg|—|11.2|—|nC||
|Gate-Source Charge|Qgs|—|2.0|—|nC||
|Gate-Drain Charge|Qgd|—|2.2|—|nC||
|Turn-On DelayTime|tD(ON)|—|3.5|—|ns|VGS= 10V, VDD= 20V,<br>Rg= 1.6Ω, ID= 20A<br>~~————~~|
|Turn-On Rise Time|tR|—|4.6|—|ns||
|Turn-Off DelayTime|tD(OFF) <br>~~oe~~|—<br>~~ee~~|12.4<br>~~ee~~|—<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Fall Time<br>~~————~~|tF<br>~~————~~<br>~~oe~~|—<br>~~————~~<br>~~ee~~|4.9<br>~~————~~<br>~~ee~~|—<br>~~————~~<br>~~ee~~|ns<br>~~————~~<br>~~ee~~||
|Body Diode Reverse Recovery Time<br>~~————~~|tRR<br>~~————~~<br>~~oe~~|—<br>~~————~~<br>~~ee~~|11.3<br>~~————~~<br>~~ee~~|—<br>~~————~~<br>~~ee~~|ns<br>~~————~~<br>~~ee~~|IF= 15A, di/dt = 400A/µs<br>~~————~~|
|BodyDiode Reverse RecoveryCharge<br>~~————~~|QRR<br>~~————~~<br>~~oe~~|—<br>~~————~~<br>~~ee~~|9.5<br>~~————~~<br>~~ee~~|—<br>~~————~~<br>~~ee~~|nC<br>~~————~~<br>~~ee~~||



- Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout, single sided. 

   6. Device mounted on FR-4 substrate PCB, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 

   7. Short duration pulse test used to minimize self-heating effect. 

   8. Guaranteed by design. Not subject to product testing. 

2 of 7 **www.diodes.com** 

DMT4014LDV Document number: DS42919  Rev. 2 - 2 

December 2020 © Diodes Incorporated 

**DMT4014LDV** 

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40.0<br>35.0 aa<br>VGS = 4.0V<br>30.0<br>VGS = 10.0V<br>25.0 VGS = 8.0V<br>VGS = 6.0V<br>20.0 VGS = 4.5V VGS = 3.5V<br>15.0 ff a<br>10.0 | a VGS = 3.0V<br>5.0<br>VGS = 2.8V<br>0.0 f[|<br>0 1 2 3 4 5<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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30<br>VDS = 5V Yf<br>25<br>20<br>15<br>ee |<br>10<br>ee |<br>TJ = 150℃ TJ = 85℃<br>5 TJ = 25℃<br>TJ = 125℃ TJ = -55℃<br>0 ffBp<br>0 1 2 3 4 5<br>VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 2. Typical Transfer Characteristic<br>0.2<br>0.15 ID = 20AD = 20A= 20A<br>0.1<br>0.05<br>ID = 15AD = 15A= 15A<br>0<br>0 4 8 12 16 20<br>VGS, GATE-SOURCE VOLTAGE (V)GS, GATE-SOURCE VOLTAGE (V), GATE-SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A)<br>ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>RDS(ON)<br>**----- End of picture text -----**<br>


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0.04 0.2<br>0.036 TT<br>0.032 ee<br>0.15 ID = 20AD = 20A= 20A<br>0.028 ee<br>0.024<br>VGS = 4.5V 0.1<br>0.02 PE TE<br>0.016<br>T r<br>0.05<br>0.012 P| VGS = 10V Pf ID = 15AD = 15A= 15A<br>0.008 se re<br>0.004 e e 0<br>0 5 10 15 20 25 30 0 4 8 12 16 20<br>ID, DRAIN-SOURCE CURRENT (A)  VGS, GATE-SOURCE VOLTAGE (V)GS, GATE-SOURCE VOLTAGE (V), GATE-SOURCE VOLTAGE (V)<br>Figure 3. Typical On-Resistance vs. Drain Current and  Figure 4. Typical Transfer Characteristic<br>Gate Voltage<br>2.2<br>0.03<br>0.027 VGS = 10V 2<br>0.024 P SE TJ = 150℃ 1.8 EEF<br>0.021 1.6 VGS = 10V, ID = 20A<br>0.018 — TJ = 125℃ e y<br>0.015 a TJ = 85℃ 1.4<br>0.012 a TJ = 25℃ 1.2 AF<br>0.009 TJ = -55℃<br>1<br>0.006 a a pe VGS = 4.5V, ID = 15A<br>0.8<br>0.003<br>0 es 0.6 PTTTT tt<br>-50 -25 0 25 50 75 100 125 150<br>0 4 8 12 16 20<br>ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (℃)<br>Figure 5. Typical On-Resistance vs. Drain Current and  Figure 6. On-Resistance Variation with Junction<br>Junction Temperature Temperature<br>, DRAIN-SOURCE ON-RESISTANCE (Ω) , DRAIN-SOURCE ON-RESISTANCE (Ω)<br>RDS(ON) RDS(ON)<br>(NORMALIZED)<br>,  DRAIN-SOURCE ON-RESISTANCE (Ω) , DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


3 of 7 **www.diodes.com** 

DMT4014LDV Document number: DS42919  Rev. 2 - 2 

December 2020 © Diodes Incorporated 

**DMT4014LDV** 

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0.04<br>0.036<br>a<br>0.032<br>0.028 VGS = 4.5V, ID = 15A<br>pe<br>0.024<br>0.02<br>aaa<br>0.016<br>a ae<br>0.012 VGS = 10V, ID = 20A<br>0.008 oe aa<br>0.004 a =<br>0 a<br>-50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (℃)<br>Figure 7. On-Resistance Variation with Junction<br>Temperature<br>30<br>VGS = 0V<br>25 PT<br>20 ee) |i<br>15 ee |<br>10<br>ky<br>5 a TJ = 150 [o] C |) TJ = 85 [o] C <a<br>TJ = 125 [o] C TJ = 25 [o] C<br>TJ = -55 [o] C<br>0 WI}<br>0 0.4 0.8 1.2 1.6 2<br>VSD, SOURCE-DRAIN VOLTAGE (V)<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>, SOURCE CURRENT (A)<br>IS<br>**----- End of picture text -----**<br>


Figure 9. Diode Forward Voltage vs. Current 

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10<br>9<br>8<br>7<br>6<br>5<br>4<br>3<br>VDS = 20V, IS = 20A<br>2<br>1<br>0<br>1<br>0 2 4 6 8 10 12<br>Qg (nC)<br>Figure 11. Gate Charge<br> (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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3<br>2.5 TTT]...<br>2 Eee<br>ID = 1mA<br>1.5<br>wee<br>1 ee<br>ID = 250μA<br>pe ee<br>0.5<br>Pt ree<br>TTT<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (℃)<br>Figure 8. Gate Threshold Variation vs. Junction<br>Temperature<br>10000<br>f = 1MHz<br>ae e<br>1000 Ciss<br>pp<br>100 ——= —————— Coss —<br>10 pf |__| Crss  “Jf tt<br>a<br>a ee<br>1 —————<br>0 5 10 15 20 25 30 35 40<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 10. Typical Junction Capacitance<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>**----- End of picture text -----**<br>


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1000<br>RDS(ON) PW = 100µs<br>Limited PW = 1ms<br>100 PW = 10ms<br>PW = 100ms<br>10<br>1<br>TTJ(Max) A = 25= 150 ℃ ℃ PW = 1s<br>0.1 Single Pulse PW = 10s<br>DUT on 1*MRP  DC<br>Board<br>VGS = 10V<br>0.01 aesatit<br>0.1 1 10 100<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 12. SOA, Safe Operation Area<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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DMT4014LDV Document number: DS42919  Rev. 2 - 2 

December 2020 © Diodes Incorporated 

**DMT4014LDV** 

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1<br>SS<br>D = 0.7<br>SOMA D = 0.5 rime ems ay, cacfi mst TTT<br>C ee<br>D = 0.3<br>D = 0.9<br>Pas Arr IN TTT TIT TIT PPT PT<br>SM HALE TUTTE | HY EUATIVIE (TIM TATUETI<br>0.1<br>D = 0.1 e ee AI TALIA<br>ee e L ee<br>See D = 0.05 eeCOeea e rAbitACElimn etl enti inwest ati west ae<br>S e<br>eee TOT Tt<br>et ATE D = 0.02 TT ETE ETE ETE CTA VT TT<br>0.01<br>ee— eK"ee D = 0.01 soug (ULIUIA<br>E HH<br>D = 0.005<br>TE HCP PP PPE<br>D = Single Pulse<br>Arn ny HMC EHEC<br>ie ccm MI C TTI TITCUMTPIT PP |<br>RθJA (t) = r(t) * RθJA<br>RθJA = 124℃/W<br>Duty Cycle, D = t1/t2<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 100000 1000000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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DMT4014LDV Document number: DS42919  Rev. 2 - 2 

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**DMT4014LDV** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**PowerDI3333-8 (Type UXC)** 

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D A<br>D1 A1<br>E1 E<br>cele c<br>L<br>E3<br>E4<br>E2<br>D2 k1<br>k<br>L<br>b e<br>a<br>**----- End of picture text -----**<br>


|**PowerDI3333-8**<br>**(Type UXC)**|**PowerDI3333-8**<br>**(Type UXC)**|**PowerDI3333-8**<br>**(Type UXC)**|**PowerDI3333-8**<br>**(Type UXC)**|
|---|---|---|---|
|**Dim**|**Min**|**Max**|**Typ**|
|**A**|0.75|0.85|0.80|
|**A1**|0.00|0.05|--|
|**b**|0.25|0.40|0.32|
|**c**|0.10|0.25|0.15|
|**D**|3.20|3.40|3.30|
|**D1**|2.95|3.15|3.05|
|**D2**|0.90|1.30|1.10|
|**E**<br>**E1**|3.20<br>2.95|3.40<br>3.15|3.30<br>305|
|**E1**<br>**E2**|2.95<br>1.60|3.15<br>2.00|3.05<br>1.80|
|**E3**|0.95|1.35|1.15|
|**E4**|0.10|0.30|0.20|
|**e**|||0.65|
|**L**|0.30|0.50|0.40|
|**k**|0.50|0.90|0.70|
|**k1**|0.13|0.53|0.33|
|**a**|0°|12°|10°|
|**All Dimensions in mm**||||



## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **PowerDI3333-8 (Type UXC)** 

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X3<br>X2<br>Y2<br>X1<br>Y1<br>T au.<br>Y3<br>G1 G<br>Y<br>C X<br>**----- End of picture text -----**<br>


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Dimensions Value (in mm)<br>C  0.650<br>G  0.230<br>G1  0.600<br>X  0.420<br>X1  1.200<br>X2  2.370<br>X3  2.630<br>Y  0.600<br>Y1  1.900<br>Y2  2.400<br>Y3  3.600<br>**----- End of picture text -----**<br>


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DMT4014LDV Document number: DS42919  Rev. 2 - 2 

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**DMT4014LDV** 

## **IMPORTANT NOTICE** 

1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 

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5. Diodes products are provided subject to Diodes’ Standard Terms and Conditions of Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/)  or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 

6. Diodes products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is prohibited under any applicable laws and regulations. Should customers or users use Diodes products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. 

7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. 

8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use. 

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DMT4014LDV Document number: DS42919  Rev. 2 - 2 

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