DMT3009LDT-7

**DMT3009LDT** C7 

## **N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|---|---|
|**Device**<br>**BVDSS**<br>**RDS(ON) Max**<br>**ID Max**<br>**TC = +25°C**<br>(Note 10)<br>Q1 & Q2<br>30V<br>11.1mΩ@VGS= 10V<br>30A<br>13.8mΩ@VGS= 4.5V<br>28A<br>22.0mΩ@VGS= 3.8V<br>22A|||||
||**Device**|**BVDSS**|**RDS(ON) Max**|**ID Max**<br>**TC = +25°C**<br>(Note 10)|
||Q1 & Q2|30V|11.1mΩ@VGS= 10V|30A|
||||13.8mΩ@VGS= 4.5V|28A|
||||22.0mΩ@VGS= 3.8V|22A|



## **Features and Benefits** 

- Low Gate Threshold Voltage 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen- and Antimony-Free. “Green” Device (Note 3)** 

- **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/** 

## **Description** 

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. 

## **Mechanical Data** 

- Case: V-DFN3030-8 (Type K) 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

## **Applications** 

- General Purpose Interfacing Switch 

   - Terminals: Finish – NiPdAu over Copper Lead-Frame. Solderable per MIL-STD-202, Method 208 **e4** 

   - Weight: 0.02 grams (Approximate) 

- Power Management Functions 

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V-DFN3030-8 (Type K)<br>Q1  Q2<br>ooo S2 S2 S2 G2 D1 b2<br>5 6 7 8<br>S1/D2<br>D1<br>4 3 2 1 PIN 1<br>D1 D1 D1 G1<br>\ Le noon 3 =<br>PIN 1  PIN 1<br>Bottom View<br>Top View  Bottom View  Equivalent Circuit<br>Internal Schematic<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|
|---|---|---|---|---|
||||||
|**Part Number**|**Case**|**Tape Width**|**Tape Pitch**|**Packaging**|
|DMT3009LDT-7|V-DFN3030-8(Type K)|8mm|4mm|3,000/Tape & Reel|
|DMT3009LDT-7A|V-DFN3030-8(Type K)|12mm|8mm|1,500/Tape & Reel|



Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See http://www.diodes.com/quality/lead_free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

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DMT3009LDT Document number: DS37810  Rev. 7 - 2 

January 2021 © Diodes Incorporated 

**DMT3009LDT** 

## **Marking Information** 

## **Site 1** 

## **Site 2** 

**V-DFN3030-8 (Type K)** T30= Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 20 = 2020) WW = Week Code (01 to 53) **T30** T30= Product Type Marking Code YWX = Date Code Marking Y = Year (ex: 0= 2020) **T30** W = Week (ex: a = week 27; z represents week 52 and 53) X = Internal code (ex: U = Monday) 

Date Code Key **Year 2020 2021 2022 2023 2024 2025 2026 2027** ~~ee~~ **Code 0 1 2 3** ~~ee~~ **4** ~~ee~~ **5** ~~ee~~ 6 7 **Week 1-26 27-52 53 Code** A-Z a-z z ~~eeee~~ **Internal Code Sun Mon Tue Wed Thu Fri Sat** ~~ee~~ **Code** T U V W X Y Z 

## **Maximum Ratings** (@ TA = +25°C, unless otherwise specified.) 

|||||||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Q1&Q2 **|**Unit**|
|Drain-Source Voltage|||VDSS|30|V|
|Gate-Source Voltage|||VGSS|+20,-16|V|
|Continuous Drain Current (Note 6) VGS= 10V|Steady State<br>(Note 10)|TC= +25°C<br>TC= +70°C|ID|30<br>25|A|
||t<10s|TA= +25°C<br>TA= +70°C|ID|14<br>11|A|
|Maximum BodyDiode Forward Current(Note 6)|||IS|2.1|A|
|Pulsed Drain Current(100µs Pulse,DutyCycle = 1%)|||IDM|80|A|
|Pulsed BodyDiode Forward Current(370µs Pulse,DutyCycle = 1%)|||ISM|80|A|
|Avalanche Current(Note 7)L = 0.1mH|||IAS|19.3|A|
|Avalanche Energy (Note 7)L = 0.1mH|||EAS|18.6|mJ|



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DMT3009LDT Document number: DS37810  Rev. 7 - 2 

January 2021 © Diodes Incorporated 

**DMT3009LDT** 

## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation (Note 5)|TA= +25°C|PD|1.2|W|
||TA= +70°C||0.8||
|Thermal Resistance, Junction to Ambient (Note 5)|SteadyState|RθJA|107|°C/W|
||t<10s||63||
|Total Power Dissipation (Note 6)|TA= +25°C|PD|2.0|W|
||TA= +70°C||1.2||
|Thermal Resistance, Junction to Ambient (Note 6)|SteadyState|RθJA|64|°C/W|
||t<10s||39||
|Thermal Resistance,Junction to Case(Note 6)||RθJC|7.6||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics**(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~—_——_—————~~|**Symbol**<br>~~—_——_—————~~|**Min**<br>~~—_——_—————~~|**Typ**<br>~~—_——_—————~~|**Max**<br>~~—_——_—————~~|**Unit**<br>~~—_——_—————~~|**Test Condition**<br>~~—_——_—————~~|
|**OFF CHARACTERISTICS**(Note 8)<br>~~—_——_—————~~|||||||
|Drain-Source Breakdown Voltage<br>~~—_——_—————~~|BVDSS<br>~~—_——_—————~~|30<br>~~—_——_—————~~|<br>~~—_——_—————~~<br>~~GG~~|<br>~~—_——_—————~~<br>~~GG~~|V<br>~~—_——_—————~~<br>~~GO~~|VGS= 0V,ID= 250µA<br>~~—_——_—————~~<br>~~(O~~|
|Zero Gate Voltage Drain Current<br>~~DG~~|IDSS<br>~~DG~~|<br>~~DG~~|<br>~~DG~~<br>~~GG~~|1<br>~~DG~~<br>~~GG~~|µA<br>~~DG~~<br>~~GO~~|VDS= 24V,VGS= 0V<br>~~DG~~<br>~~(O~~|
|Zero Gate Voltage Drain Current TJ= +150°C (Note<br>9)<br>~~pp~~|IDSS<br>~~pp~~|<br>~~pp~~|<br>~~GG~~<br>~~pp~~|100<br>~~GG~~<br>~~pp~~|µA<br>~~GO ~~<br>~~pp~~|VDS= 24V, VGS= 0V<br> ~~(O~~<br>~~pp~~|
|Gate-Source Leakage<br>~~A~~|IGSS<br>~~A~~|<br>~~A~~|<br>~~A~~|±100<br>~~A~~|nA<br>~~A~~|VGS= 20V, VDS= 0V<br>VGS=-16V,VDS= 0V<br>~~A~~|
|**ON CHARACTERISTICS**(Note 8)|||||||
|Gate Threshold Voltage|VGS(TH)|1||3|V|VDS= VGS,ID= 250µA|
|Static Drain-Source On-Resistance<br>~~R=~~|RDS(ON)<br>~~R=~~|<br>~~R=~~|7.2<br>~~R=~~|11.1<br>~~R=~~|mΩ<br>~~R=~~|VGS= 10V,ID= 14.4A<br>~~R=~~|
|||<br>~~R=~~|10.5<br>~~R=~~|13.8<br>~~R=~~||VGS= 4.5V,ID= 7A<br>~~R=~~|
|||<br>~~R=~~|13<br>~~R=~~|22.0<br>~~R=~~||VGS= 3.8V,ID= 5A<br>~~R=~~|
|Diode Forward Voltage<br>~~R=~~<br>~~———_~~<br>~~es~~|VSD<br>~~R=~~<br>~~es~~|<br>~~R=~~<br>~~es~~|<br>~~R=~~<br>~~es~~<br>~~ee~~|1.2<br>~~R=~~<br>~~>35>:~~|V<br>~~R=~~<br>~~35>:+~~|VGS= 0V,IS= 10A<br>~~R=~~<br>~~+~~|
|**DYNAMIC CHARACTERISTICS**(Note 9)<br>~~———_~~<br>~~es~~<br>~~ee>35>:+~~|||||||
|Input Capacitance<br>~~———_~~<br>~~es~~|Ciss<br>~~es~~|<br>~~es~~|748<br>~~es~~<br>~~ee~~|1,500<br>~~>35>:~~|pF<br>~~35>: +~~|VDS= 15V, VGS= 0V, f = 1.0MHz<br>~~+~~|
|Output Capacitance<br>~~———_~~<br>~~es~~|Coss<br>~~es~~|<br>~~es~~|447<br>~~es~~<br>~~ee ~~|895<br> ~~> 35>:~~|||
|Reverse Transfer Capacitance|Crss||43|90|||
|Gate Resistance<br>~~———~~|Rg||1.0|2.0<br>~~e~~|Ω<br>~~e~~|VDS= 0V,VGS= 0V,f = 1.0MHz<br>~~ee~~|
|Total Gate Charge(VGS= 10V)<br>~~a~~<br>~~———~~|Qg<br>~~a~~|<br>~~a~~|13.8<br>~~a~~|20<br>~~a~~<br>~~e~~|nC<br>~~e~~|VDS= 15V, ID= 14.4A<br>~~ee~~|
|Total Gate Charge(VGS= 4.5V)<br>~~———~~|Qg||6.4|9<br>~~e~~|||
|Gate-Source Charge<br>~~———~~|Qgs||2.2|5<br>~~e~~|||
|Gate-Drain Charge<br>~~———~~|Qgd||2.2|5<br>~~e~~|||
|Turn-On DelayTime<br>~~———~~<br>~~PO~~<br>~~ee~~|tD(ON)<br>~~ee~~|<br>~~ee~~|3.5<br>~~ee~~|7<br>~~e~~<br>~~ee~~|ns<br>~~e~~<br>~~ee~~<br>~~a~~|VGS= 10V, VDD= 15V, Rg= 1Ω,<br>ID= 10A<br>~~ee~~<br>~~ee~~<br>~~a~~|
|Turn-On Rise Time<br>~~———~~<br>~~ee~~|tR<br>~~ee~~|<br>~~ee~~|5.0<br>~~ee~~|10<br>~~e~~<br>~~ee~~|||
|Turn-Off DelayTime<br>~~ee~~|tD(OFF)<br>~~ee~~|<br>~~ee~~|8.6<br>~~ee~~|17<br>~~ee~~|||
|Turn-Off Fall Time<br>~~ee~~<br>~~a~~|tF<br>~~ee~~<br>~~a~~|<br>~~ee~~<br>~~a~~|1.4<br>~~ee~~<br>~~a~~|3<br>~~ee~~<br>~~a~~|||
|BodyDiode Reverse RecoveryTime<br>~~a~~|tRR<br>~~a~~<br>~~ss~~|<br>~~a~~<br>~~ss~~|18<br>~~a~~<br>~~GO~~|33<br>~~a~~<br>~~GO~~|ns<br>~~a~~<br>~~(OOO~~|IF= 10A,di/dt = 100A/μs<br>~~a~~<br>~~(OOO~~|
|BodyDiode Reverse RecoveryCharge<br>~~es~~|QRR<br>~~es~~<br>~~ss~~|<br>~~es~~<br>~~ss~~|7.7<br>~~es~~<br>~~GO~~|15<br>~~es~~<br>~~GO~~|nC<br>~~es~~<br>~~(OOO~~|IF= 10A,di/dt = 100A/μs<br>~~es~~<br>~~(OOO~~|



6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. 

7. UIS in production with L = 0.1mH, starting TA = +25°C. 

8. Short duration pulse test used to minimize self-heating effect. 

9. Guaranteed by design. Not subject to product testing. 

10. Package limited. 

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DMT3009LDT Document number: DS37810  Rev. 7 - 2 

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**DMT3009LDT** 

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30<br>VDS=5V DS=5V =5V<br>25 e ee<br>20<br>e e<br>15 ees ie<br>10<br>e/a 125 ℃ 85 ℃<br>5 Gf<br>25 ℃<br>150 ℃<br>-55 ℃<br>0 Fe<br>1 1.5 2 2.5 3 3.5<br>VGS, GATE-SOURCE VOLTAGE (V) GS, GATE-SOURCE VOLTAGE (V) , GATE-SOURCE VOLTAGE (V)<br>Figure 2. Typical Transfer Characteristic<br>0.05<br>ID=14.4A D=14.4A =14.4A<br>0.04<br>0.03<br>0.02<br>0.01<br>ID=7.0A D=7.0A =7.0A<br>0<br>0 4 8 12 16<br>VGS, GATE-SOURCE VOLTAGE (V)  GS, GATE-SOURCE VOLTAGE (V)  , GATE-SOURCE VOLTAGE (V)<br>Figure 4. Typical Transfer Characteristic<br>1.8<br>1.6  VGS=4.5V, ID=7.0A GS=4.5V, ID=7.0A =4.5V, ID=7.0A D=7.0A =7.0A<br> VGS=10V, ID=14.4A GS=10V, ID=14.4A =10V, ID=14.4A D=14.4A =14.4A<br>1.4 A<br>i<br>1.2 Of<br>1 Seep<br> VGS=3.8V, ID=5.0A GS=3.8V, ID=5.0A =3.8V, ID=5.0A D=5.0A =5.0A<br>0.8 e T<br>0.6 FL Ete tt<br>-50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (J, JUNCTION TEMPERATURE (, JUNCTION TEMPERATURE ( ℃ )<br>Figure 6. On-Resistance Variation with Junction<br>Temperature<br>, DRAIN CURRENT (A) IDD<br>IDD<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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30.0 30<br> VGS=3.5V  VDS=5V DS=5V =5V<br>25.0 LK 7 25 e ee<br> VGS=4.0V<br>20.0  VGS=4.5V   VGS=3.0V  20<br>H A  VGS=10.0V  —_ e e<br>15.0 | 15 ees ie<br> VGS=2.8V<br>10.0 10<br>Lo — e/a 125 ℃ 85 ℃<br>5.0 | Zane 5 Gf<br>25 ℃<br>150 ℃<br>-55 ℃<br>0.0 Ae 0 Fe<br>0 0.4 0.8 1.2 1.6 2 1 1.5 2 2.5 3<br>VDS, DRAIN-SOURCE VOLTAGE (V)  VGS, GATE-SOURCE VOLTAGE (V) GS, GATE-SOURCE VOLTAGE (V) , GATE-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic<br>Figure 2. Typical Transfer Characteristic<br>0.012 0.05<br> VGS=4.5V<br>0.011 Pf |f e ID=14.4A D=14.4A =14.4A<br>0.04<br>0.01 an e<br>0.03<br>0.009 ft ft ft ft<br>0.008 Pf Ff fF ff<br>0.02<br> VGS=10V<br>0.007 pff f<br>0.01<br>0.006 im] ft ft |<br>ID=7.0A D=7.0A =7.0A<br>0.005 Ff | | ft 0<br>0 5 10 15 20 25 30 0 4 8 12<br>ID, DRAIN-SOURCE CURRENT (A)   VGS, GATE-SOURCE VOLTAGE (V)  GS, GATE-SOURCE VOLTAGE (V)  , GATE-SOURCE VOLTAGE (V)<br>Figure 3. Typical On-Resistance vs. Drain Current<br>Figure 4. Typical Transfer Characteristic<br>and Gate Voltage<br>0.013 1.8<br>0.012 ne VGS=10V  150 ℃<br>1.6  VGS=4.5V, ID=7.0A GS=4.5V, ID=7.0A =4.5V, ID=7.0A D=7.0A =7.0A<br>0.011 125 ℃  VGS=10V, ID=14.4A GS=10V, ID=14.4A =10V, ID=14.4A D=14.4A =14.4A<br>e e s 1.4 A<br>0.01<br>ee i<br>85 ℃<br>0.009 e e 1.2 Of<br>0.008<br>ee 25 ℃ 1 Seep<br> VGS=3.8V, ID=5.0A GS=3.8V, ID=5.0A =3.8V, ID=5.0A D=5.0A =5.0A<br>0.007<br>-55 ℃<br>0.006 SS S 0.8 e T<br>0.005 TITEL 0.6 FL Ete tt<br>0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125<br>ID, DRAIN CURRENT (A)  TJ, JUNCTION TEMPERATURE (J, JUNCTION TEMPERATURE (, JUNCTION TEMPERATURE ( ℃ )<br>, DRAIN CURRENT (A) ID , DRAIN CURRENT (A) IDD<br>(Ω)<br>, DRAIN-SOURCE ON-RESISTANCE  , DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>DS(ON)<br>R<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>DS(ON) R<br>R<br>**----- End of picture text -----**<br>


Figure 5. Typical On-Resistance vs. Drain Current and Junction Temperature 

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**DMT3009LDT** 

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0.024 2<br>1.8<br>0.02 Pp] d |  VGS=3.8V, ID=5.0A  pit tt tt<br>1.6<br>0.016  VGS=4.5V, ID=7.0A  = S RC ID=1mA<br>1.4<br>0.012 a o N<br>1.2<br>iS = Oo:<br>0.008<br>See  VGS=10V, ID=14.4A  1 N ON ID=250μA<br>0.004 a oT 0.8 aan oS aN!<br>0 PEt TELL 0.6 PET LEE LLY<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE ( ℃ )  TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 7. On-Resistance Variation with Junction  Figure 8. Gate Threshold Variation vs. Junction<br>Temperature  Temperature<br>(Ω)<br>, DRAIN-SOURCE ON-RESISTANCE  GATE THRESHOLD VOLTAGE (V)<br>GS(TH),<br>DS(ON) V<br>R<br>**----- End of picture text -----**<br>


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30<br> VGS=0V, TJ=25 ℃<br>25 ae ie<br> VGS=0V, TJ=85 ℃<br>20<br>eee ie<br> VGS=0V, TJ=125 ℃<br>15<br>ee ||<br> VGS=0V, TJ=150 ℃<br>10<br>ee |<br>5<br>ff f<br> VGS=0V, TJ=-55 ℃<br>0 WD<br>0 0.3 0.6 0.9 1.2 1.5<br>VSD, SOURCE-DRAIN VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current<br>, SOURCE CURRENT (A)<br>IS<br>**----- End of picture text -----**<br>


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10000<br>f=1MHz<br>_————<br>eeee es<br>1000 Ciss<br>tt<br>Coss<br>100<br>S ES<br>Crss<br>a<br>10 fF a et ee| ee| eeEE<br>0 5 10 15 20 25 30<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11. Typical Junction Capacitance<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>**----- End of picture text -----**<br>


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100000<br>150 ℃<br>10000 ——————<br>125 ℃<br>1000 —— _<br>85 ℃<br>100 =SS— —<br>10<br>a e<br>25 ℃<br>1 == =<br>0.1 a<br>0 5 10 15 20 25 30<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 10. Typical Drain-Source Leakage Current<br>vs. Voltage<br>10<br>8<br>6<br> VDS=15V, ID=14.4A<br>4<br>2<br>0<br>0 3 6 9 12 15<br>Qg (nC)<br>Figure 12. Gate Charge<br>, LEAKAGE CURRENT (nA)<br>IDSS<br> (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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DMT3009LDT Document number: DS37810  Rev. 7 - 2 

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© Diodes Incorporated 

## Lr. 

## **DMT3009LDT** 

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100<br>R Limited DS(ON)  ag PW=1ms   PW=<br>100μs<br>ee VIAN ANT IS<br>10 a N NNNNKS<br>a, Se Se.See<br>ae [NE] OS SE Neeeee EMee eee<br>DC<br>1 DSRSP|ONS<br>—— PW | =10s    VWHoSSSASNSSSSOA<br>rr ee eee. Oi,a ee Ee<br>0.1 TTJ(MAX)A=25 ℃ =150 ℃ PW=1s   SSRNAINA<br>Single Pulse<br>DUT on 1*MRP board  PW=100ms   ah~JeEee<br>VGS=10V  PW=10ms<br>0.01 nae Rl<br>0.1 1 10 100<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 13. SOA, Safe Operation Area<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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1<br>REESE Ta RRS SSeee<br>eeCTa  ~nett~ Scull D=0.9  A<br>D=0.3<br>D=0.7<br>1<br>0.1 ig [THULE] ST 77Seer D=0.5  ae TEToccoETI<br>D=0.1  ae<br>Fa a [EC] uy IM LTT<br>D=0.05<br>Ean PTT [CHa] TT ap<br>D=0.02  SITS AATMOR EITM TTLT ER GTTTIRR RORL IA<br>0.01<br>Liner D=0.01  eee AIMeen aesLUISst LINeset EAISesto TISESSUT<br>BSEdeer | ALTREALETTT er LH)<br>PT SSA | D=0.005  PTT TT RθJA(t)=r(t) * RθJA  TT<br>Si Co RθJA=107 ℃ /W  ill<br>Duty Cycle, D=t1 /  t2<br>D=Single Pulse<br>0.001 Ted ro i<br>1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 14. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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DMT3009LDT Document number: DS37810  Rev. 7 - 2 

January 2021 © Diodes Incorporated 

**DMT3009LDT** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **V-DFN3030-8 (Type K)** 

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**----- Start of picture text -----**<br>
A3<br>A1<br>A<br>V-DFN3030-8<br>Seating Plane (Type K)<br>Teele Dim  Min  Max  Typ<br>D A  0.77  0.85  0.80<br>A1  0.00 0.05 0.02<br>D/2<br>A3  0.20BSC<br>e b  0.35  0.45  0.40<br>k1<br>D  2.95  3.050  3.00<br>D2  2.30  2.50  2.40<br>D2a  2.30  2.50  2.40<br>raf f | SS<br>E2 E  2.95 3.050 3.00<br>E2  0.42  0.62  0.52<br>D2 k<br>E2a  0.89  1.09  0.99<br>E<br>e  0.65BSC<br>D2a E2a k  -  -  0.35<br>E/2 k1  -  -  0.22<br>L  0.30 0.40 0.35<br>z  0.325BSC<br>L<br>All Dimensions in mm<br>k1<br>b<br>z<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**==> picture [391 x 297] intentionally omitted <==**

**----- Start of picture text -----**<br>
V-DFN3030-8 (Type K)<br>X1<br>X C<br>Value<br>Dimensions<br>(in mm)<br>Y C  0.650<br>G  0.195<br>G1  0.200<br>Y4<br>Y5 X  0.450<br>Y1<br>X1  2.550<br>Y  0.450<br>Y6<br>Y3 Y1  1.044<br>Y2  0.566<br>Y2 Y3  0.389<br>Y4  0.089<br>Y5  1.150<br>H ae, - Y6  3.200<br>G<br>Ga G1<br>7 of 8<br>www.diodes.com<br>**----- End of picture text -----**<br>


DMT3009LDT Document number: DS37810  Rev. 7 - 2 

January 2021 © Diodes Incorporated 

**DMT3009LDT** 

## **IMPORTANT NOTICE** 

1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

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## **www.diodes.com** 

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DMT3009LDT Document number: DS37810  Rev. 7 - 2 

January 2021 © Diodes Incorporated