DMP2200UDW-7

**DMP2200UDW** id 

**Dual P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Summary** 

|**Summaryy**|||
|---|---|---|
|**V(BR)DSS**|**RDS(on) max**|**ID max**|
|-20V|260mΩ @VGS= -4.5V|-0.9 A|
||500mΩ @VGS= -2.5V||
||1000mΩ @VGS= -1.8V||



## **Features** 

- Low  RDS(ON)  – Minimizes Conduction Losses 

- Low Input Capacitance 

- Fast Switching Speed 

- Low  Input/Output Leakage 

- **ESD Protected Gate** 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

## **Description** 

This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Mechanical Data** 

- Case: SOT363 

## **Applications** 

- Battery Disconnect Switch 

- • Load Switch for Power Management Functions 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability  Classification Rating 94V-0 

- Moisture Sensitivity:  Level 1 per J-STD-020 

- Terminals Connections: See Diagram 

- Terminals: Finish - Matte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 

- Weight: 0.006 grams (Approximate) 

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SOT363  D1 D2 D2 G1 S1<br>G1 G2<br>~ Gate Protection Diode 2 S1 O Gate Protection Diode S2 l S2 G2 D1<br>Top View  Q1 P-CHANNEAL Q2 P-CHANNEAL Top View<br>Pin out<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMP2200UDW-7|SOT363|3,000/Tape & Reel|
|DMP2200UDW-13|SOT363|10,000/Tape &Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http://www.diodes.com. 

## **Marking Information** 

SOT363 

P22 = Marking Code YM =Y or Y= Year (ex: B = 2014) ~~:~~ Date Code Marking M = Month (ex: 9 = September) 

Date Code Key **Year 2014 2015 2016 2017 2018 2019 2020** ~~So~~ **Code** B C D E F G H **Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec** ~~ee~~ **Code** 1 2 3 4 5 6 7 8 9 O N D DMP2200UDW 1 of 6 February 2015 Document number: DS37689 Rev. 1 - 2 **www.diodes.com** © Diodes Incorporated 

**DMP2200UDW** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Units**|
|Drain-Source Voltage||VDSS|-20|V|
|Gate-Source Voltage||VGSS|±8|V|
|Continuous Drain Current (Note 6)|TA= +25°C<br>TA= +85°C|ID|-0.9<br>-0.7|A|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Units**|
|Total Power Dissipation(Note 5)||PD|0.45|W|
|Total Power Dissipation(Note 6)|||0.6|W|
|Thermal Resistance, Junction to Ambient (Note 5)|Steady<br>State|RθJA|275|°C/W|
|Thermal Resistance, Junction to Ambient (Note 6)|Steady<br>State||208||
|Thermal Resistance,Junction to Case||RθJC|72||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||||
|---|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 7)**|||||||
|Drain-Source Breakdown Voltage|BVDSS|-20|||V|VGS= 0V,ID= 250µA|
|Zero Gate Voltage Drain Current<br>~~ee~~|IDSS<br>~~ee~~|<br>~~ee~~|<br>~~ee~~|-1<br>~~ee~~|µA<br>~~ee~~|VDS= -16V,VGS= 0V<br>~~ee~~|
|Gate-BodyLeakage<br>~~ee~~|IGSS<br>~~ee~~|<br>~~ee~~|<br>~~ee~~|±10<br>~~ee~~|µA<br>~~ee~~|VGS=±8V,VDS= 0V<br>~~ee~~|
|**ON CHARACTERISTICS(Note 7)**|||||||
|Gate Threshold Voltage|VGS(th)|-0.4||-1.2|V|VDS= VGS,ID= -250µA|
|Static Drain-Source On-Resistance<br>~~pot~~|RDS (ON)<br>~~pot~~|<br>~~pot~~|180<br>240<br>320<br>~~pot~~|260<br>500<br>1,000<br>~~pot~~|mΩ<br>~~pot~~|VGS= -4.5V, ID= -0.88A<br>VGS= -2.5V, ID= -0.71A<br>VGS= -1.8V,ID= -0.20A<br>~~pot~~|
|Diode Forward Voltage<br>~~pot~~|VSD<br>~~pot~~|<br>~~pot~~|-0.8<br>~~pot~~|-1.2<br>~~pot~~|V<br>~~pot~~|VGS= 0V,IS= -0.48A<br>~~pot~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~Ce~~|||||||
|Input Capacitance<br>~~———~~|Ciss<br>~~———~~|<br>~~———~~|184<br>~~———~~|<br>~~———~~|pF<br>~~———~~|VDS= -10V, VGS= 0V<br>f = 1.0MHz<br>~~———~~|
|Output Capacitance<br>~~———~~|Coss<br>~~———~~|<br>~~———~~|26.4<br>~~———~~|<br>~~———~~|pF<br>~~———~~||
|Reverse Transfer Capacitance<br>~~———~~|Crss<br>~~———~~|<br>~~———~~|18.5<br>~~———~~|<br>~~———~~|pF<br>~~———~~||
|Gate Resistance<br>~~———~~|Rg<br>~~———~~|<br>~~———~~|221<br>~~———~~|<br>~~———~~|Ω<br>~~———~~|VDS= VGS= 0V,f = 1.0MHz<br>~~———~~|
|Total Gate Charge|Qg||2.1||nC|VGS= -4.5V, VDS= -10V,<br>ID= -1.7A<br>~~ee~~|
|Gate-Source Charge|Qgs||0.4||nC||
|Gate-Drain Charge<br>~~————~~|Qgd||0.5|<br>~~ee~~|nC<br>~~ee~~||
|Turn-On DelayTime<br>~~————~~|tD(ON)||9.8|<br>~~ee~~|ns<br>~~ee~~|VDD= -10V, ID= -1.5A,<br>VGS= -4.5V, RGEN= 1Ω<br>~~ee~~|
|Turn-Off DelayTime<br>~~————~~|tD(OFF)||24.4|<br>~~ee~~|ns<br>~~ee~~||
|Turn-On Rise Time<br>~~————~~|tr||88|<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Fall Time<br>~~————~~|tf||45|<br>~~ee~~|ns<br>~~ee~~||



Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 

7. Short duration pulse test used to minimize self-heating effect. 

8. Guaranteed by design. Not subject to product testing. 

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DMP2200UDW Document number: DS37689 Rev. 1 - 2 

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**DMP2200UDW** 

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5.0 5<br>TA = -55°C<br>VDS = -5.0V<br>VGS = -8.0V TA = 25°C TA  = 125°C<br>4.0 4<br>VGS  = -4.5V TA = 85°C TA = 150°C<br>VGS = -3.0V<br>3.0 3<br>Fo fF<br>VGS = -2.0V<br>2.0 2<br>|Ae VGS = -1.8V se<br>VGS  = -1.5V<br>1.0 1<br>VGS = -1.2V<br>po fe<br>0.0 ee 0 ne<br>0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5<br>VDS , DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristic Figure 2 Typical Transfer Characteristics<br>0.3 0.6<br>ID = -0.88A<br>0.55<br>0.28 a a CSE Eee<br>0.5<br>0.26 V GS  = -2.5V 0.45<br>0.24 eTa 0.4 AEee<br>0.35<br>0.22<br>cE 0.3 REESE<br>0.2 0.25<br>{| | | CREEL<br>VGS = -4.5V<br>0.18 0.2 I D  = -0.71A<br>0.15<br>0.16<br>0 | 1 | 2 tf 3 4 5 0.1 TERE<br>0 1 2 3 4 5 6 7 8<br>I D, DRAIN-SOURCE CURRENT (A)<br>Figure 3 Typical On-Resistance vs.  VGS, GATE-SOURCE VOLTAGE (V)<br>Drain Current and Gate Voltage  Figure 4 Typical Transfer Characteristics<br>0.34 1.5<br>0.32 V GS  = -4.5V To TA = 150°C VGS = -2.5V<br>1.4<br>0.3 ID = -0.71A<br>0.28 1.3<br>TA = 125°C<br>0.26 1.2 VGS = -4.5V<br>0.24 ID = -0.88A<br>ee TA = 85°C eee a<br>1.1<br>0.22 a aa PT TT Aa<br>0.2 Cr a a TA  = 25°C 1 eee<br>0.18<br>0.160.14 —a T A  = -55°C 0.90.8 COPE‘yi<br>0.12<br>0 oo 1 2 3 4 5 0.7 7-COEE| ttt tl<br>Figure 5 Typical On-Resistance vs. ID, DRAIN CURRENT (A) -50 -25TJ, JUNCTION TEMPERATURE ( C)0 25 50 75 100 ° 125 150<br>Drain Current and Temperature Figure 6 On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A) ID , DRAIN CURRENT (A) ID<br>)Ω )Ω<br>, DRAIN-SOURCE ON-RESISTANCE ( , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R DS(ON)<br>R<br>)Ω<br>, DRAIN-SOURCE<br>DS(ON)<br>, DRAIN-SOURCE ON-RESISTANCE ( R<br>ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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**DMP2200UDW** [ 

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0.36 1<br>0.34<br>0.32 VGS = -2.5V 0.9<br>ID = -0.71A<br>0.3 SE oe pt ttt<br>0.8 I D  = -1mA<br>0.28<br>0.26 Seea : 0.7 RRSee<br>0.24 Ae Oo<br>0.6 ID = -250µA<br>0.22<br>0.180.2 4Cet ear VIDGS = -0.88A = -4.5V 0.5 ttySRrKSN=<br>0.16 aPTIA 0.4 | ty tTTN><br>0.14<br>0.3<br>0.12 -50 -25 0 25 50 75 100 125 150<br>-50 Se} -25 T , JUNCTION TEMPERATURE (J 0 25 50 75 100 °125C) 150 | CO TFigure 8 Gate Threshold Variation vs. J, JUNCTION TEMPERATURE (°C)<br>Figure 7 On-Resistance Variation with Temperature Junction Temperature<br>5 1000<br>4 a T A  = 150°C f ——<br>C iss<br>3 a TA = 125°C ff a<br>TA  = 25°C 100<br>2 ff T A  = 85°C Co<br>1 fh TA = 55°C A C oss<br>Wy ae f = 1MHz Crss<br>0 AF 10 SS=<br>0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS , DRAIN-SOURCE VOLTAGE (V)<br>Figure 9 Diode Forward Voltage vs. Current Figure 10 Typical Junction Capacitance<br>8 10<br>7 RLimitedDS(on) P W  = 100µs<br>6 Et TENE EIN PT TTT<br>1<br>5<br>DC<br>4 VDS = -10V PW = 10s<br>ID = -1.7A PW = 1s<br>Lf PW = 100ms RAY KN<br>3 ORT PW = 10ms<br>0.1<br>P W  = 1ms<br>2 T J(m ax)  = 150°C<br>T A  = 25°C<br>1 VGS  = 4.5V Nell<br>Single Pulse<br>DUT on 1 * MRP Board<br>0 0.01 FrEN<br>0 1 2 3 4 0.1 1 10 100<br>Qg, TOTAL GATE CHARGE (nC) -VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11 Gate Charge Figure 12 SOA, Safe Operation Area<br>)<br>Ω<br>, DRAIN-SOURCE ON-RESISTANCE ( , GATE THRESHOLD VOLTAGE (V)<br>GS(th)<br>V<br>DS(ON)<br>R<br>, SOURCE CURRENT (A)<br>IS , JUNCTION CAPACITANCE (pF)<br>CT<br>, DRAIN CURRENT (A)<br>D<br> GATE THRESHOLD VOLTAGE (V) -I<br>GS<br>V<br>**----- End of picture text -----**<br>


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1<br>D = 0.9<br>D = 0.7<br>Teo D = 0.5<br>D = 0.3<br>Pq TP PAR Pq<br>0.1<br>D = 0.1<br>D = 0.05<br>OR mmnnithiee Aaat Tt a aT TT<br>ttt D = 0.02 A<br>0.01<br>D = 0.01<br>D = 0.005 R θJA (t) = r(t) * R θJA<br>er ET RDuty Cycle, D = t1/ t2 θJA  = 271°C/W TT<br>D = Single Pulse<br>0.001 Sectu {CUTIVEreCTT etEIa amil<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. 

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aU A fr SOT363<br>Dim Min Max Typ<br>A 0.10 0.30 0.25<br>es<br>+] B C |FOO BC | 1.12.005 {|{| 1.2.20 35 1.2.10 30<br>D 0.65 Typ<br>F 0.40 0.45  0.425<br>atl (| | | {|<br>| H | 1.80 {|{| 2.20  2.15<br>—— H | a J 0  0.10  0.05<br>K 0.90 1.00  1.00<br>K M L 0.25 0.40  0.30<br>VO) «) +1 M 0.10 0.22  0.11<br>OTD,eR J hBOSeS ———es α  0°  8°  -<br>D F L a All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

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C2 C2<br>k K a k e 4<br>Dimensions Value (in mm)<br>Z 2.5<br>G 1.3<br>G C1 X 0.42<br>Z<br>Y 0.6<br>C1 1.9<br>Y C2 0.65<br>fiPoot| ==<br>Ik X ><br>**----- End of picture text -----**<br>


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**DMP2200UDW** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

A.   Life support devices or systems are devices or systems which: 

1. are intended to implant into the body, or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated 

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DMP2200UDW Document number: DS37689 Rev. 1 - 2 

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