DMP2160UFDBQ-7

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DMP2160UFDBQ<br>DIODES. @, [<br>DUAL P-CHANNEL ENHANCEMENT MODE MOSFET<br>Product Summary Features<br>V(BR)DSS RDS(ON) max TA = +25°C ID MAX   Low On-Resistance  Low Gate Threshold Voltage, -0.9V Max<br>70mΩ @ VGS = -4.5V  -3.8A   Fast Switching Speed<br>-20V<br>85mΩ @ VGS = -2.5V  -3.3A   Low Input/Output Leakage<br> Low Profile, 0.5mm Max Height<br> Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)<br>Description   Halogen and Antimony Free. “Green” Device (Note 3)<br> Qualified to AEC-Q101 Standards for High Reliability<br>This MOSFET is designed to minimize the on-state resistance<br>(RDS(on)) and yet maintain superior switching performance, making it   PPAP Capable (Note 4)<br>ideal for high efficiency power management applications.<br>Mechanical Data<br>Applications   Case: U-DFN2020-6 Type B<br> Load Switch   Case Material: Molded Plastic, “Green” Molding Compound.<br> Power Management Functions  UL Flammability Classification Rating 94V-0<br> Portable Power Adaptors   Moisture Sensitivity: Level 1 per J-STD-020<br> Terminal Connections: See Diagram<br>— a  Terminals: Finish – NiPdAu Annealed over Copper Leadframe.<br>Solderable per MIL-STD-202, Method 208   e4<br> Weight: 0.0065 grams (Approximate)<br>U-DFN2020-6<br>Type B  D3 G2 S1 D1 D2<br>S2<br>G2<br>D2  D1  G1 G2<br>D1  4 5 6<br>D2<br>S G D S1 S2<br>G1<br>a> S1  @) &<br>Top View  Q1 P-CHANNEL  Q2 P-CHANNEL<br>Pin1  Internal Schematic<br>Bottom View  Internal Schematic<br>NEW PRODUCT<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 5) 

|**Ordering Informationg Information Information** (Note 5)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMP2160UFDBQ-7|U-DFN2020-6 Type B|3000/Tape & Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/ 

   5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

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**DMP2160UFDBQ** 

|NEW PRODUCT<br>**Marking Information**<br>Date CodeKey<br>**Year**<br>**2008**<br>**2009**<br>**2010**<br>**2011**<br>**2012**<br>**2013**<br>**2014**<br>**2015**<br>**Code**<br>V<br>W<br>X<br>Y<br>Z<br>A<br>B<br>C<br>**Month**<br>**Jan**<br>**Feb**<br>**Mar**<br>**Apr**<br>**May**<br>**Jun**<br>**Jul**<br>**Aug**<br>**Sep**<br>**Code**<br>1<br>2<br>3<br>4<br>5<br>6<br>7<br>8<br>9<br>**Maximum Ratings**(@TA= +25°C, unless otherwise specified.)<br>**Characteristic**<br>**Symbol**<br>**Value**<br>Drain-Source Voltage<br>VDSS<br>-20<br>Gate-Source Voltage<br>VGSS<br>±12<br>Drain Current(Note 6)<br>ID<br>-3.8<br>Pulsed Drain Current(Note 7)<br>IDM<br>-13<br>P2 = Marking Code<br>YM = Date Marking<br>Y = Year (ex: V = 2008)<br>M = Month (ex: 9 = September)<br>Dot denotes Pin 1<br>**P2**<br>**YM**<br>|~~SS~~||**2016**<br>D<br>**Oct**<br>O||**2017**<br>E<br>**Nov**<br>N<br>**Units**<br>V<br>V<br>A<br>A|**2018**<br>F<br>**Dec**<br>D|
|---|---|---|---|---|---|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Power Dissipation(Note 6)|PD|1.4|W|
|Thermal Resistance,Junction to Ambient|RJA|89|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C|



**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||||
|---|---|---|---|---|---|---|
|**Characteristic**<br>~~ee~~|**Symbol**<br>~~ee~~|**Min**<br>~~ee~~|**Typ**<br>~~ee~~|**Max**<br>~~ee~~|**Unit**<br>~~ee~~|**Test Condition**<br>~~ee~~|
|**OFF CHARACTERISTICS(Note 8)**<br>~~ee~~|||||||
|Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~|-20<br>~~ee~~|<br>~~ee~~|<br>~~ee~~|V<br>~~ee~~|VGS= 0V,ID= -250µA<br>~~ee~~|
|Zero Gate Voltage Drain Current<br>~~ee~~|IDSS<br>~~ee~~|<br>~~ee~~|<br>~~ee~~|-1<br>~~ee~~|A<br>~~ee~~|VDS= -20V,VGS= 0V<br>~~ee~~|
|Gate-Source Leakage<br>~~ee~~|IGSS<br>~~ee~~|<br><br>~~ee~~|<br><br>~~ee~~|100<br>800<br>~~ee~~|nA<br>~~ee~~|VGS=8V, VDS= 0V<br>VGS=12V,VDS= 0V<br>~~ee~~|
|**ON CHARACTERISTICS(Note 8)**<br>~~ee~~|||||||
|Gate Threshold Voltage<br>~~—~~|VGS(th)<br>|-0.45<br>|<br>|-0.9<br>|V<br>|VDS= VGS,ID= -250A<br>|
|Static Drain-Source On-Resistance<br>~~—|~~|RDS (ON)<br>~~|~~|<br><br><br>~~|~~|54<br>68<br>86<br>~~|~~|70<br>85<br><br>~~|~~|mΩ<br>~~|~~|VGS= -4.5V,ID= -2.8A<br>~~|~~|
|||||||VGS= -2.5V,ID= -2.0A<br>~~|~~|
|||||||VGS= -1.8V,ID= -1.0A<br>~~|~~|
|Forward Transfer Admittance<br>~~—|~~||Yfs|<br>~~|~~|<br>~~|~~|8<br>~~|~~|<br>~~|~~|S<br>~~|~~|VDS= -5V,ID= -2.8A<br>~~|~~|
|Diode Forward Voltage(Note 8)<br>~~—~~|VSD<br>|<br>|0.7<br>|-1.2<br>|V<br>|VGS= 0V,IS= -1.6A<br>|
|**DYNAMIC CHARACTERISTICS**<br>~~eseeee~~|||||||
|Input Capacitance<br>~~——~~<br>~~es~~|Ciss<br>~~——~~<br>~~ee~~|<br>~~——~~<br>~~ee~~|536<br>~~——~~<br>~~ee~~|<br>~~——~~<br>~~ee~~|pF<br>~~——~~<br>~~ee~~|VDS= -10V, VGS= 0V<br>f = 1.0MHz<br>~~——~~|
|Output Capacitance<br>~~——~~<br>~~es~~|Coss<br>~~——~~<br>~~ee~~|<br>~~——~~<br>~~ee~~|68<br>~~——~~<br>~~ee~~|<br>~~——~~<br>~~ee~~|pF<br>~~——~~<br>~~ee~~||
|Reverse Transfer Capacitance<br>~~——~~<br>~~es~~|Crss<br>~~——~~<br>~~ee~~|<br>~~——~~<br>~~ee~~|59<br>~~——~~<br>~~ee~~|<br>~~——~~<br>~~ee~~|pF<br>~~——~~<br>~~ee~~||
|Gate Resistance<br>~~es ~~|Rg<br> ~~ee~~|<br>~~ee~~|8.72<br>~~ee ~~|<br> ~~ee~~|Ω<br>~~ee~~|VDS= 0V, VGS= 0V, f = 1MHz|
|Total Gate Charge<br>~~Oe~~|Qg<br>~~Oe~~|<br>~~Oe~~|6.5<br>~~Oe~~|<br>~~Oe~~|nC<br>~~Oe~~|VGS= -4.5V, VDD= -10V,<br>ID= -1.5A|
|Gate-Source Charge<br>~~Oe~~|Qgs<br>~~Oe~~|<br>~~Oe~~|0.8<br>~~Oe~~|<br>~~Oe~~|nC<br>~~Oe~~||
|Gate-Drain Charge<br>~~Oe~~<br>~~ee~~|Qgd<br>~~Oe~~<br>~~ee~~|<br>~~Oe~~<br>~~ee~~|1.4<br>~~Oe~~<br>~~ee~~|<br>~~Oe~~<br>~~ee~~|nC<br>~~Oe~~||
|Turn-On Delay Time<br>~~Oe~~<br>~~ee~~|tD(on)<br>~~Oe~~<br>~~ee~~|<br>~~Oe~~<br>~~ee~~|11.51<br>~~Oe~~<br>~~ee~~|<br>~~Oe~~<br>~~ee~~|ns<br>~~Oe~~|VGEN= -4.5V, VDD= -10V,<br>RL= 10Ω, RG= 6Ω|
|Turn-On Rise Time<br>~~ee~~|tr<br>~~ee~~|<br>~~ee~~|12.09<br>~~ee~~|<br>~~ee~~|ns||
|Turn-Off DelayTime<br>~~ee~~|tD(off)<br>~~ee~~|<br>~~ee~~|55.34<br>~~ee~~|<br>~~ee~~|ns||
|Turn-Off Fall Time<br>~~ee~~|tf<br>~~ee~~|<br>~~ee~~|27.54<br>~~ee~~|<br>~~ee~~|ns||



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**DMP2160UFDBQ** 

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10 10<br>VGS = -8.0V VDS = -5V<br>VGS = -4.5V<br>8 V GS  = -2.5V 8<br>VGS = -2.0V<br>6 6<br>fo sf<br>4 VGS = -1.5V 4<br>TA = 150°C<br>2 aan 2 T A  = 125°C y TA = 85°C<br>TA = 25°C<br>VGS = -1.0V VGS = -1.2V TA = -55°C<br>0 0<br>0 1 2 3 4 5 0.5 1 1.5 2<br>-VDS, DRAIN-SOURCE VOLTAGE (V) -VGS, GATE SOURCE VOLTAGE (V)<br>Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics<br>0.14 0.14<br>0.12 0.12<br>0.1 To 0.1 A<br>SeeeeZE PoP TA Er  = 150°C<br>TA = 125°C<br>0.08 V GS = -1.8V 0.08<br>Cee) |=  Ce<br>0.06 V GS = -2.5V 0.06 TA = 85°C<br>VGS = -4.5V TA = 25°C<br>0.04 — 0.04 SES T A  = -55°C S<br>0.02 0.02<br>PTTTTTTT]) =o ET<br>0 0<br>0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8<br>COCPPPe) | Gee<br>-ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A)<br>Fig. 3 Typical On-Resistance  Fig. 4  Typical Drain-Source On-Resistance<br>vs. Drain Current and Gate Voltage vs. Drain Current and Temperature<br>1.6<br>0.11<br>1.4<br>VGS = -2.5V<br>ID = -2A 0.09<br>1.2 cooper} V GSID = -5A  = -4.5V = LLL VGSID = -2A = -2.5V LEE<br>0.07<br>1.0<br>core} Deer VGS = -4.5V<br>ID = -5A<br>0.05<br>0.8<br>AT eee<br>0.6 PPPT TTT) 0.03 ELL<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)<br>Fig. 5 On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, DRAIN CURRENT (A)<br>-I<br>D<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>, DRAIN-SOURCE<br>R<br>ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, DRAIN CURRENT (A)<br>-I<br>D<br>**----- End of picture text -----**<br>


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**DMP2160UFDBQ** 

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10,000 1<br>CC f = 1MHz<br>ee<br>a——_—COa 0.9 PP et te<br>a<br>se 0.8 ~~<br>1,000 No|_| | 0.7 MeeMN EE |<br>C iss<br>\ es | 0.6 m < . ID = -1mA<br>0.5<br>100 QO= Coss ID = -250µA =<br>0aI NI Crss ———— 0.4 PEE| ONS™<br>——— 0.3 Pi Et Ey ysS<br>10 0.2<br>tT | ft Pt |} [ett]<br>0 4 8 12 16 20 -50 -25 0 25 50 75 100 125 150<br>-VDS, DRAIN-SOURCE VOLTAGE (V) TA, AMBIENT TEMPERATURE (°C)<br>Fig. 7 Typical Capacitance Fig. 8 Gate Threshold Variation vs. Ambient Temperature<br>10 10,000<br>ee<br>a Qa<br>8 1,000 |i| TT A A = 150°C = 125 __ °C<br>———SSSSS SS|<br>a GG<br>6 TA = 25°C<br>TA = 85°C<br>100 TY<br>4<br>a QO<br>10<br>2<br>T A  = 25°C<br>ee | [oY<br>/ ———=_—<br>0 1<br>A eeee<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 4 8 12 16 20<br>-VSD, SOURCE-DRAIN VOLTAGE (V) -VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 9 Diode Forward Voltage vs. Current Fig. 10 Typical Drain-Source Leakage Current vs. Voltage<br>1<br>D = 0.7<br>SSee<br>a D = 0.5 ge a<br>ee<br>D = 0.3<br>PE TT TEN ern TT EE PP<br>0.1 LUTESNFLAT er D = 0.9 aUT ELLIE | eeEAE TTT TT<br>He D = 0.1<br>| D = 0.05 LUT UA<br>0.01 PoaPteeeiE D = 0.01 D = 0.02 D = 0.005 71Aea)TTeeeTIE AEEHTAIT|ToTIT|HH J P(pk) TR JR -JA T —_e JA t (t) = r(t) *  A1 = 146°C/Wt =2 P * R  R JA (t)JA lllAeeHECooomall<br>HS Duty Cycle, D = t1/t2 a<br>0.001 Tc oon Co<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (s)<br>Fig. 11 Transient Thermal Response<br>, GATE THRESHOLD VOLTAGE (V)<br>-V<br>GS(TH)<br>C, CAPACITANCE (pF)<br>, SOURCE CURRENT (A)<br>S<br>-I<br>, LEAKAGE CURRENT (nA)<br>-I<br>DSS<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 

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U-DFN2020-6<br>A A3 Type B<br>SEATING PLANE Dim  Min  Max  Typ<br>Tite A1 ky — A  0.545 0.605 0.575<br>A1  0 0.05 0.02<br>D<br>Pin#1 ID A3    0.13<br>D2 b  0.20 0.30 0.25<br>D  1.95 2.075 2.00<br>z d    0.45<br>D2  0.50 0.70 0.60<br>d<br>E E2 e    0.65<br>f f E  1.95 2.075 2.00<br>E2  0.90 1.10 1.00<br>L f    0.15<br>L  0.25 0.35 0.30<br>e b z    0.225<br>Bae: Sane All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

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ed Y C<br>Dimensions  Value (in mm)<br>G<br>X2 Z 1.67<br>G 0.20<br>T E G1 + G1 0.40<br>X1 X1 1.0<br>X2 0.45<br>Y 0.37<br>sti m G Y1 0.70<br>Y1 C 0.65<br>el Z<br>**----- End of picture text -----**<br>


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**DMP2160UFDBQ** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2014, Diodes Incorporated 

**www.diodes.com** 

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