DMP2160UFDB-7

**NOT RECOMMENDED FOR NEW DESIGN USE DMP2065UFDB DMP2160UFDB** BODES ~~[LO]~~ | **DUAL P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Features** 

## **Mechanical Data** 

- Low On-Resistance 

   - 70mΩ @VGS = -4.5V 

   - 85mΩ @VGS = -2.5V 

   - 86mΩ (Typ) @VGS = -1.8V 

- Low Gate Threshold Voltage, -0.9V Max 

- Fast Switching Speed 

- Low Input/Output Leakage 

- Low Profile, 0.5mm Max Height 

   - Case: U-DFN2020-6 (Type B) 

   - Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminal Connections: See Diagram 

   - Terminals: Finish – NiPdAu Annealed over Copper Leadframe; Solderable per MIL-STD-202, Method 208 **e4** 

   - Weight: 0.0065 grams (Approximate) 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- **An Automotive-Compliant Part is Available Under Separate Datasheet (DMP2160UFDBQ)** 

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U-DFN2020-6 (Type B)<br>**----- End of picture text -----**<br>


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D1 D2<br>S2<br>G2<br>D2<br>D1<br>D1<br>D2  G1 G2<br>G1<br>S1<br>Pin1  S1 S2<br>Bottom View  Equivalent Circuit<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|
|---|---|---|
||||
|**Part Number**|**Case**|**Packaging**|
|DMP2160UFDB-7|U-DFN2020-6(Type B)|3,000/Tape & Reel|
|DMP2160UFDB-7R|U-DFN2020-6(Type B)|3,000/Tape & Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

U-DFN2020-6 (Type B) 

P2 = Marking Code YM = Date Marking **P2** Y = Year (ex: E = 2017) M = Month (ex: 9 = September) Dot Denotes Pin 1 

|Date Code Key|||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|DMP2160UFDB<br>1 of 7<br>December 2017<br>**Year**<br>**2008**<br>**2009**<br>**…..**<br>**2015**<br>**2016**<br>**2017**<br>**2018**<br>**2019**<br>**2020**<br>**2021**<br>**2022**<br>**Code**<br>V<br>W<br>…..<br>C<br>D<br>E<br>F<br>G<br>H<br>I<br>J<br>**Month**<br>**Jan**<br>**Feb**<br>**Mar**<br>**Apr**<br>**May**<br>**Jun**<br>**Jul**<br>**Aug**<br>**Sep**<br>**Oct**<br>**Nov**<br>**Dec**<br>**Code**<br>1<br>2<br>3<br>4<br>5<br>6<br>7<br>8<br>9<br>O<br>N<br>D<br>~~ee~~<br>~~So~~|||||||||||||
|Document number: DS31643  Rev. 10-3|||||**www.diodes.com**|||||||© Diodes Incorporated|



December 2017 © Diodes Incorporated 

**NOT RECOMMENDED FOR NEW DESIGN USE DMP2065UFDB** 

**DMP2160UFDB** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|VDSS|-20|V|
|Gate-Source Voltage|VGSS|±12|V|
|Drain Current(Note 5)|ID|-3.8|A|
|Pulsed Drain Current(Note 6)|IDM|-13|A|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA= +25°C, unless otherwise specified.)|= +25°C, unless otherwise specified.)|= +25°C, unless otherwise specified.)|||||
|---|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 7)**|||||||
|Drain-Source Breakdown Voltage|BVDSS|-20|—|—|V|VGS= 0V,ID= -250µA|
|Zero Gate Voltage Drain Current<br>~~NSIS~~|IDSS<br>~~NSIS~~|—<br>~~NSIS~~|—<br>~~NSIS~~|-1<br>~~NSIS~~|µA<br>~~NSIS~~|VDS= -20V,VGS= 0V<br>~~NSIS~~|
|Gate-Source Leakage<br>~~NSIS~~|IGSS<br>~~NSIS~~|—<br>—<br>~~NSIS~~|—<br>~~NSIS~~|±100<br>±800<br>~~NSIS~~|nA<br>~~NSIS~~|VGS= ±8V, VDS= 0V<br>VGS= ±12V,VDS= 0V<br>~~NSIS~~|
|**ON CHARACTERISTICS(Note 7)**|||||||
|Gate Threshold Voltage|VGS(TH)|-0.45|—|-0.9<br>~~|~~|V<br>~~|~~|VDS= VGS,ID= -250µA|
|Static Drain-Source On-Resistance<br>~~Oh~~|RDS(ON)<br>~~Oh~~|—<br>—<br>—<br>~~Oh~~|54<br>68<br>86<br>~~Oh~~|70<br>85<br>—<br>~~Oh~~<br>~~|~~|mΩ<br>~~Oh~~<br>~~|~~|VGS= -4.5V,ID= -2.8A<br>~~Oh~~|
|||||||VGS= -2.5V,ID= -2.0A<br>~~Oh~~|
|||||||VGS= -1.8V,ID= -1.0A<br>~~Oh~~|
|Forward Transfer Admittance<br>~~Oh~~||Yfs|<br>~~Oh~~|—<br>~~Oh~~|8<br>~~Oh~~|—<br>~~Oh~~<br>~~|~~|S<br>~~Oh~~<br>~~|~~|VDS= -5V,ID= -2.8A<br>~~Oh~~|
|Diode Forward Voltage(Note 7)|VSD|—|-0.7|-1.2<br>~~|~~|V<br>~~|~~|VGS= 0V,IS= -1.6A|
|**DYNAMIC CHARACTERISTICS**<br>~~aeeee~~<br>~~ee~~|||||||
|Input Capacitance<br>~~aee~~|Ciss<br>~~ee~~|—<br>~~ee~~|536<br>~~ee~~|—|pF|VDS= -10V, VGS= 0V<br>f = 1.0MHz<br>~~ee~~|
|Output Capacitance<br>~~aee~~|Coss<br>~~ee~~|—<br>~~ee~~|68<br>~~ee~~|—|pF||
|Reverse Transfer Capacitance<br>~~aee~~|Crss<br>~~ee~~|—<br>~~ee~~|59<br>~~ee~~|—|pF||
|Gate Resistance<br>~~aee~~|Rg<br>~~ee~~|—<br>~~ee~~|34<br>~~ee~~|—|Ω|VDS= 0V,VGS= 0V,f = 1MHz<br>~~ee~~|
|Total Gate Charge<br>~~a ee ~~|Qg<br> ~~ee~~|—<br>~~ee~~|6.5<br>~~ee~~|—|nC|VGS= -4.5V, VDD= -10V,<br>ID= -1.5A<br>~~ee~~|
|Gate-Source Charge|Qgs|—|0.8|—|nC||
|Gate-Drain Charge|Qgd|—|1.4|—|nC||
|Turn-On DelayTime|tD(ON)|—|11.51|—|ns|VGEN= -4.5V, VDD= -10V,<br>RL= 10Ω, RG= 6Ω|
|Turn-On Rise Time|tR|—|12.09|—|ns||
|Turn-Off DelayTime|tD(OFF)|—|55.34|—|ns||
|Turn-Off Fall Time|tF|—|27.54|—|ns||



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

- Notes: 5. Device mounted on FR-4 PCB, on minimum recommended, 2oz Copper pad layout. 

   6. Repetitive rating, pulse width limited by junction temperature. 

   7. Short duration pulse test used to minimize self-heating effect. 

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DMP2160UFDB Document number: DS31643  Rev. 10 - 3 

December 2017 © Diodes Incorporated 

**NOT RECOMMENDED FOR NEW DESIGN USE DMP2065UFDB** 

**DMP2160UFDB** 

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10 10<br>VGS = -8.0V V     = -5VDS<br>VGS = -4.5V<br>8 V GS  = -2.5V 8<br>VGS = -2.0V [A)] (T<br>[N] E<br>6 Peo R 6 f<br>R<br>U<br>C<br>4 VGS = -1.5V [IN] RA 4<br>D<br>fp , D s<br>- [I]<br>T   = 150°CA<br>2 foo 2 T   = 125°CA / T   = 85°CA<br>T   = 25°CA<br>VGS = -1.0V VGS = -1.2V T   = -55°CA<br>0 0<br>0 1 2 3 4 5 0.5 1 1.5 2<br>-VDS, DRAIN-SOURCE VOLTAGE (V) -V    , GATE SOURCE VOLTAGE (V)GS<br>Fig. 1 Typical Output Characteristics<br>Fig. 2 Typical Transfer Characteristics<br>0.14 ) 0.14<br>[(] E<br>0.12 THT. C 4 0.12 ,<br>0.1 es [SISTAN] E 0.1 Y O T   = 150°CA<br>- [R] T   = 125°CA<br>0.08 V GS = -1.8V [N] O 0.08<br>oo E S SO<br>ig h C (Y é~<br>0.06 V GS = -2.5V R 0.06 T   = 85°CA<br>VGS = -4.5V - [SOU] T   = 25°CA<br>oe CS<br>0.04 [IN] RA 0.04 T   = -55°CA<br>D<br>0.02 TOR , [)] ON 0.02<br>(<br>D [S]<br>R<br>0 0<br>0 SnD 1 2-ID, DRAIN CURRENT (A)3 4 5 7 6 7 8 (pee 0 1 2-I  , DRAIN CURRENT (A)D 3 4 5 6 7 8<br>Fig. 3 Typical On-Resistance  Fig. 4  Typical Drain-Source On-Resistance<br>vs. Drain Current and Gate Voltage vs. Drain Current and Temperature<br>1.6<br>0.11<br>1.4 ORE) Oe<br>VGS = -2.5V<br>ID = -2A 0.09<br>1.2 592s V GSID = -5A  = -4.5V Au VGSID = -2A = -2.5V e<br>0.07<br>1.0<br>VGS = -4.5V<br>eat) |  eee ID = -5A<br>0.05<br>0.8<br>TT eee<br>0.6 PLE TTT 0.03 ALE<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE ((°C)  癈 ) TJ, JUNCTION TEMPERATURE ((°C)  癈 )<br>Fig. 5 On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>, DRAIN CURRENT (A)<br>D<br>-I<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>D<br>, DRAIN CURRENT (A)<br>-I<br>**----- End of picture text -----**<br>


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DMP2160UFDB 

December 2017 © Diodes Incorporated 

**www.diodes.com** 

Document number: DS31643  Rev. 10 - 3 

**NOT RECOMMENDED FOR NEW DESIGN USE DMP2065UFDB** 

**DMP2160UFDB** 

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10,000 1<br>f = 1MHz )<br>( [V] 0.9<br>G [E]<br>0.8<br>O [LTA]<br>1,000 V<br>0.7<br>eee SRR<br>C iss H [OLD]<br>S 0.6 I   = -1mAD<br>esses T [HRE] 0.5 FR O<br>100 Coss T [E] I   = -250µAD<br>Ses Crss G [A] , ) 0.4 VO S S<br>T [H]<br>(<br>G [S] 0.3<br>= - [V] aan’ 2.4a><br>10 0.2<br>0 4 8 12 16 20 -50 -25 0 25 50 75 100 125 150<br>ee -VDS, DRAIN-SOURCE VOLTAGE (V) ee eee ae) T  , AMBIENT TEMPERATURE (°C)A 4Ren<br>Fig. 7 Typical Capacitance Fig. 8 Gate Threshold Variation vs. Ambient Temperature<br>10 10,000<br>8 T   = 150°CA<br>[nA)] (T 1,000 T   = 125°CA<br>[N] E<br>R<br>6 T A  = 25°C TA = 25 癈 RU<br>C T   = 85°CA<br>100<br>G [E]<br>4<br>, [LEAKA] SS 10<br>2 Tce,  Ya - [I] D T   = 25°CA<br>0 1<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 4 8 12 16 20<br>EKA -VSD, SOURCE-DRAIN VOLTAGE (V) —— -V    , DRAIN-SOURCE VOLTAGE (V)DS<br>Fig. 9 Diode Forward Voltage vs. Current Fig. 10 Typical Drain-Source Leakage Current vs. Voltage<br>10<br>9 VDS = -10V<br>ID = -1.5A<br>8<br>Gur wan<br>7 wi GR ha<br>6<br>aa” 6/7<br>5 QQ<br>4 PFOYY]<br>3 Of<br>2 PF oYi| |<br>1 LY ||<br>0 hi<br>0 5 10 15<br>Q g, TOTAL GATE CHARGE (nC)<br>Figure 11 Gate-Charge Characteristics<br>S<br>, SOURCE CURRENT (A)<br>-I<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>-V<br>, LEAKAGE CURRENT (nA)<br>DSS<br>-I<br>C, CAPACITANCE (pF)<br>, GATE-SOURCE VOLTAGE (V)<br>-V<br>GS<br>**----- End of picture text -----**<br>


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DMP2160UFDB Document number: DS31643  Rev. 10 - 3 

December 2017 © Diodes Incorporated 

**DMP2160UFDB** 

## **NOT RECOMMENDED FOR NEW DESIGN USE DMP2065UFDB** 

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1<br>D = 0.7<br>SGT 1 I EEETIERRERISC eo: ee ETT |<br>D = 0.5<br>na a eo<br>ee<br>D = 0.3<br>or rH LEHRER HT<br>0.1 LUI D = 0.1 LATINh D = 0.9<br>EE UI EAT LALIT LT<br>PoTT D = 0.05 HitToT TE T T T Oe CULL  AMACTTACT CTTTTTTTTCT TT TTT TTT RθJA R JA(t) = r(t) = r(t) * R(t) * R TTT θJAJA ChTTT<br>D = 0.02 RθJA R= 146JA  = 146°C/W ℃ /W<br>TY ee tT<br>0.01 IFSSa D = 0.01 A BO eeALMTAI|ELLIEUIL  UITIE P(pk) t1 CersHoeiii a Fe Poy|<br>Lotti]AMIE D = 0.005 §=6|A7| | Iii [ TI iit | Titty ft TTT T T J - TJ - T j}¢«—_> A = P A t = 2  P *  R * R θJAJA(t)  (t) a y [ TT<br>AAT eT Ch<br>Duty Cycle, D = t1/t2<br>eI D = Single Pulse  ETI EE EI Rt<br>0.001<br>eum EUAN CEE LUTTE LETTE INOW AP LTS<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t 1, PULSE DURATION TIME (s)<br>Fig. 12 Transient Thermal Response<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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DMP2160UFDB Document number: DS31643  Rev. 10 - 3 

December 2017 

**www.diodes.com** 

© Diodes Incorporated 

**NOT RECOMMENDED FOR NEW DESIGN USE DMP2065UFDB** 

**DMP2160UFDB** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **U-DFN2020-6 (Type B)** 

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**----- Start of picture text -----**<br>
A3<br>A1<br>A<br>Seating Plane U-DFN2020-6<br>(Type B)<br>Sat<br>D Dim  Min  Max  Typ<br>A  0.545 0.605 0.575<br>D2 D2 A1  0.00 0.05 0.02<br>A3 -  -  0.13<br>b 0.20 0.30 0.25<br>D  1.95 2.075 2.00<br>D2  0.50 0.70 0.60<br>e  -  -  0.65<br>z1 E  1.95 2.075 2.00<br>E2  0.90 1.10 1.00<br>E z1 E2<br>k  -  -  0.45<br>k L  0.25 0.35 0.30<br>= z  -  -  0.225<br>z1  -  -  0.175<br>L All Dimensions in mm<br>e<br>z<br>b<br>ggested Pad Layout ested Pad Layout yout out<br>Please see http://www.diodes.com/package-outlines.html for the latest version.<br>U-DFN2020-6 (Type B)<br>X2<br>C<br>Value<br>Dimensions<br>(in mm)<br>C  0.650<br>G  0.150<br>G1  0.450<br>X  0.350<br>X1(2x)<br>X1  0.600<br>Y2 Y1(2x ) X2  1.650<br>G<br>Y  0.500<br>G1<br>Y1  1.000<br>Y2  2.300<br>Y<br>CT vo X<br>(Pin #1 ID)<br>R0.150<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout ested Pad Layout yout out** 

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DMP2160UFDB Document number: DS31643  Rev. 10 - 3 

December 2017 © Diodes Incorporated 

**NOT RECOMMENDED FOR NEW DESIGN USE DMP2065UFDB** 

**DMP2160UFDB** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings oO noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: we A.   Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or WD 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. NK Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its oN representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2017, Diodes Incorporated **www.diodes.com** RAZ 

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DMP2160UFDB Document number: DS31643  Rev. 10 - 3 

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