DMP2110UVTQ-7

**DMP2110UVTQ** [ **DUAL P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

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||||
|---|---|---|
|ID max|
|BVDSS|RDS(ON) max|
|TA = +25°C|
|150mΩ @ VGS = -4.5V|-1.8A|
|-20V|200mΩ @ VGS = -2.5V|-1.6A|
|240mΩ @ VGS = -1.8V|-1.4A|

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## **Description** 

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. 

## **Applications** 

- General Purpose Interfacing Switch 

- Power Management Functions 

## **Features and Benefits** 

- Low On-Resistance 

- Low Gate Threshold Voltage 

- Low Input Capacitance 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **The DMP2110UVTQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.** 

- **https://www.diodes.com/quality/product-definitions/** 

## **Mechanical Data** 

- Case: TSOT26 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminal Connections: See Diagram 

- Terminals: Finish—Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

- Weight: 0.013 grams (Approximate) 

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D1 S1 D2 TSOT26<br>G1 S2 G2<br>Top View  Top View<br>Pin-Out<br>**----- End of picture text -----**<br>


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D1 D2<br>G1 G2<br>S1 S2<br>Equivalent Circuit<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

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|---|---|---|---|
|Part Number|Case|Packaging|
|DMP2110UVTQ-7|TSOT26|3000/Tape|& Reel|
|DMP2110UVTQ-13|TSOT26|10,000/Tape|& Reel|

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- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and 

Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

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||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|AR7 = Product Type Marking Code|
|AR7|YM = Date Code Marking|
|Y or Y = Year (ex: G = 2019)|
|M = Month (ex: 9 = September)|
|Date|Code Key|
|Year|2019|2020|2021|2022|2023|2024|2025|2026|2027|
|Code|G|H|I|J|K|L|M|N|O|
|Ce|
|Month|Jan|Feb|Mar|Apr|May|Jun|Jul|Aug|Sep|Oct|Nov|Dec|
|Code|1|2|3|4|5|6|7|8|9|O|N|D|
|i{_|—]|—|—|—]|—|}|—|—|—|—|—|—_ -|

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1 of 7 **www.diodes.com** 

DMP2110UVTQ Document number: DS41734 Rev. 2 - 2 

October 2019 © Diodes Incorporated 

**DMP2110UVTQ** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|VDSS|-20|V|
|Gate-Source Voltage|VGSS|±10|V|
|Drain Current (Note 5) Continuous<br>TA= +25°C<br>TA= +70°C|= +25°C<br>= +70°C<br>ID|-1.8<br>-1.4|A|
|Pulsed Drain Current (10μs Pulse, DutyCycle = 1%)|IDM|-15|A|
|Body-Diode Continuous Current (Note 5)|IS|-0.7|A|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation (Note 5)||PD|0.74|W|
|Thermal Resistance, Junction to Ambient (Note 5)|Steady<br>State|RϴJA|168|°C/W|
|Total Power Dissipation (Note 6)||PD|0.74|W|
|Thermal Resistance, Junction to Ambient (Note 6)|Steady<br>State|RϴJA|1.01|°C/W|
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 7)**|||||||
|Drain-Source Breakdown Voltage|BVDSS|-20|—|—|V|VGS= 0V,ID= -250µA|
|Zero Gate Voltage Drain Current TJ= +25°C|IDSS|—|—|-1.0|µA|VDS= -16V,VGS= 0V|
|Gate-Source Leakage|IGSS|—|—|±100|nA|VGS= ±8V,VDS= 0V|
|**ON CHARACTERISTICS(Note 7)**|||||||
|Gate Threshold Voltage<br>~~Ee~~|VGS(TH)<br>~~Ee~~|-0.45<br>~~Ee~~|—<br>~~Ee~~|-1.0<br>~~Ee~~|V<br>~~Ee~~|VDS= VGS,ID= -250µA<br>~~Ee~~|
|Static Drain-Source On-Resistance<br>~~Ee~~|RDS(ON)<br>~~Ee~~|—<br>~~Ee~~|—<br>~~Ee~~|150<br>~~Ee~~|mΩ<br>~~Ee~~|VGS= -4.5V,ID= -2.8A<br>~~Ee~~|
||||—<br>~~Ee~~|200<br>~~Ee~~||VGS= -2.5V,ID= -2.0A<br>~~Ee~~|
||||—<br>~~Ee~~|240<br>~~Ee~~||VGS= -1.8V,ID= -1.0A<br>~~Ee~~|
|Diode Forward Voltage<br>~~Ee~~|VSD<br>~~Ee~~|—<br>~~Ee~~|—<br>~~Ee~~|-1.0<br>~~Ee~~|V<br>~~Ee~~|VGS= 0V,IS= -1A<br>~~Ee~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~——~~|||||||
|Input Capacitance<br>~~——~~|Ciss<br>|—<br>|443<br>|—<br>|pF<br>|VDS= -6V, VGS= 0V<br>f = 1.0MHz<br>|
|Output Capacitance<br>~~——~~|Coss<br>|—<br>|59<br>|—<br>|pF<br>||
|Reverse Transfer Capacitance<br>~~——~~|Crss<br>|—<br>|47<br>|—<br>|pF<br>||
|Gate Resistance<br>~~——~~|RG<br>|—<br>|8.5<br>|—<br>|Ω<br>|VGS= 0V,VDS= 0V,f = 1.0MHz<br>|
|Total Gate Charge<br>~~——~~|Qg<br>|—<br>|6.0<br>|—<br>|nC<br>|VGS= -4.5V, VDS= -10V, ID= -3A<br><br>~~eee~~|
|Gate-Source Charge<br>|Qgs<br>|—<br>|0.6<br>|—<br>|nC<br>||
|Gate-Drain Charge<br>|Qgd<br>|—<br><br>~~eee~~|1.8<br><br>~~eee~~|—<br><br>~~eee~~|nC<br><br>~~eee~~||
|Turn-On DelayTime<br>~~ee~~|tD(ON)<br>~~ee~~|—<br>~~ee~~<br>~~eee~~|4.0<br>~~ee~~<br>~~eee~~|—<br>~~ee~~<br>~~eee~~|ns<br>~~ee~~<br>~~eee~~|VDS= -10V, VGS= -4.5V,<br>RL= 10Ω, RG= 1.0Ω, ID= -1A<br>~~ee~~<br>~~eee~~|
|Turn-On Rise Time<br>~~ee~~|tR<br>~~ee~~|—<br>~~ee~~<br>~~eee~~|3.7<br>~~ee~~<br>~~eee~~|—<br>~~ee~~<br>~~eee~~|ns<br>~~ee~~<br>~~eee~~||
|Turn-Off DelayTime<br>~~ee~~|tD(OFF)<br>~~ee~~|—<br>~~ee~~<br>~~eee~~|24.5<br>~~ee~~<br>~~eee~~|—<br>~~ee~~<br>~~eee~~|ns<br>~~ee~~<br>~~eee~~||
|Turn-Off Fall Time<br>~~ee~~|tF<br>~~ee~~|—<br>~~ee~~<br>~~eee~~|9.5<br>~~ee~~<br>~~eee~~|—<br>~~ee~~<br>~~eee~~|ns<br>~~ee~~<br>~~eee~~||
|Reverse RecoveryTime<br>~~ee~~|tRR<br>~~ee~~|—<br>~~ee~~<br>~~eee~~|8.3<br>~~ee~~<br>~~eee~~|—<br>~~ee~~<br>~~eee~~|ns<br>~~ee~~<br>~~eee~~|IF= -1.0A,di/dt = 100A/μs<br>~~ee~~<br>~~eee~~|
|Reverse RecoveryCharge|QRR|—<br>~~eee~~|2.0<br>~~eee~~|—<br>~~eee~~|nC<br>~~eee~~|IF= -1.0A, di/dt= 100A/μs<br>~~eee~~|



6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 

7. Short duration pulse test used to minimize self-heating effect. 

8. Guaranteed by design. Not subject to product testing. 

2 of 7 **www.diodes.com** 

DMP2110UVTQ Document number: DS41734 Rev. 2 - 2 

October 2019 © Diodes Incorporated 

**DMP2110UVTQ** 

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10.0 10<br> VGS  VGS = -2.5V = -2.0V  VDS = -5.0V<br> VGS = -1.8V<br>8.0 8<br>{L  VGS = -3.0V  — ee<br> VGS = -4.5V<br>6.0  VGS = -8.0V  6<br>4.0 yo ” 4 a oe<br>fo  VGS = -1.5V  oon oo<br>2.0 2 85 ℃<br> VGS = -1.2V  150 ℃ 25 ℃<br>125 ℃ -55 ℃<br>0.0 a| _______— 0 a ) a<br>0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3<br>VDS, DRAIN-SOURCE VOLTAGE (V)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic  Figure 2. Typical Transfer Characteristic<br>0.15 0.5<br> VGS = -1.8V<br>0.12 0.4<br>ii a TELE<br>ID = -2.0A<br>0.09  VGS = -2.5V  0.3<br>e ee TE E<br>0.06 ae 0.2 APL EL<br> VGS = -4.5V  ID = -2.8A<br>0.03 0.1<br>L EE A ci tL<br>ID = -1.0A<br>0 ALLELE ELL 0 e rn<br>1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8<br>ID, DRAIN-SOURCE CURRENT (A)   VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3. Typical On-Resistance vs. Drain Current  Figure 4. Typical Transfer Characteristic<br>and Gate Voltage<br>0.14 1.8<br>VGS = -4.5V   VGS = -4.5V, ID = -2.8A<br>0.12 150 ℃ 1.6<br> VGS = -2.5V, ID = -2.0A<br>0.1<br>125 ℃ 1.4<br>0.08 85 ℃<br>SEERRE EE 1.2 OL<br>0.06<br>25 ℃<br>0.04 1  VGS = -1.8V, ID = -1.0A<br>-55 ℃<br>0.020 CEPRPEPE -CEECCCCo Er 0.80.6 a ZOALLEL<br>1 2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150<br>ID, DRAIN CURRENT (A)  TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 5. Typical On-Resistance vs. Drain Current  Figure 6. On-Resistance Variation with Temperature<br>and Temperature<br>, DRAIN CURRENT (A) ID , DRAIN CURRENT (A) ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)  , DRAIN-SOURCE ON-RESISTANCE (Ω)<br>RDS(ON) RDS(ON)<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>,  DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>DS(ON) R<br>R<br>**----- End of picture text -----**<br>


3 of 7 **www.diodes.com** 

DMP2110UVTQ Document number: DS41734 Rev. 2 - 2 

October 2019 © Diodes Incorporated 

**DMP2110UVTQ** 

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0.15 1.2<br> VGS = -1.8V, ID = -1.0A<br>1<br>0.12<br>Tt}  VGS = -2.5V, ID = -2.0A  ZA = EE<br>0.8<br>0.09 ID = -1mA<br>0.6<br>0.06 a oS .<br> VGS = -4.5V, ID = -2.8A<br>0.4 ID = -250μA<br>0.03<br>a- 0.2 OCCl S TRSS<br>0 0<br>-50 PTELTETT)) -25 0 25 50 75 100 125 150 =  (EEE -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE ( ℃ )  TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 7. On-Resistance Variation with Temperature  Figure 8. Gate Threshold Variation vs.<br>JunctionTemperature<br>10 10000<br>VGS = 0V  f = 1MHz<br>8 e e |<br>1000<br>6 pe Ciss<br>4<br>100 Coss<br>2 TA = 150 [o] C  I TA = 85 [o] C  N en e<br>TA = 125 [o] C  TA = 25 [o] C  Crss<br>TA = -55 [o] C<br>0 10<br>0 0.3 0.6 0.9 1.2 1.5 0 4 8 12 16 20<br>VSD, SOURCE-DRAIN VOLTAGE (V)  VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current  Figure 10. Typical Junction Capacitance<br>10 100<br>R<br>DS(ON)<br>PW = 10ms<br>8 10 PW = 100ms                                                                   PW = 1ms<br>PW = 100µs<br>6<br>1<br>4<br>VDS = -10V, ID = -3.0A  TJ(Max) = 150 ℃<br>2 0.1 TSingle Pulse C = 25 ℃ PW = 1s<br>DUT on 1*MRP  PW = 10s<br>Board<br>DC<br>0 0.01 VGS = -4.5V<br>0 anna 2 4 6 8 10 12 14 0.1 1 tte 10 fi 100<br>Qg (nC)  VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11. Gate Charge  Figure 12. SOA, Safe Operation Area<br>, GATE THRESHOLD VOLTAGE (V)<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>GS(TH)<br>DS(ON) V<br>R<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


4 of 7 **www.diodes.com** 

DMP2110UVTQ Document number: DS41734 Rev. 2 - 2 

October 2019 © Diodes Incorporated 

**DMP2110UVTQ** [| 

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'mecoereocoerRaATtTE DB<br>DrODES,<br>**----- End of picture text -----**<br>


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1 | e/a a a eo ei i reed= ce OO<br>Saw<br>D=0.7<br>P ECTCSOS ee<br>D=0.5<br>D=0.9<br>FC CC ELIUI Coe. CTH TUM<br>D=0.3  ach CUTIE FETT ETT<br>T T y NE<br>0.1 Lr| nf<br>P D=0.1  a ASH<br>ee oe ee el<br>eeOT<br>D=0.05<br>Fy vi cU HRPM TTT<br>GJ ek aa<br>CeATCC<br>D=0.02<br>0.01 ueN WATT ELI LTTE ELIE LITCT il<br>D=0.01  eZ<br>En A IASATP<br>a eet AVTee ee ee<br>D=0.005<br>Evi n TTT TTT TTT<br>RθJA(t) = r(t) * RθJA<br>D=Single Pulse  RDuty Cycle, D = t1 / t2 θJA = 173 ℃ /W<br>0.001 ee area ey a<br>1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 100000 1000000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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DMP2110UVTQ Document number: DS41734 Rev. 2 - 2 

October 2019 © Diodes Incorporated 

**DMP2110UVTQ** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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TSOT26<br>D<br>e1 0 1(4x)<br>E1/2<br>E/2<br>E1 E c<br>Gauge Plane<br>0<br>Seating Plane<br>L<br>L2<br>zie<br>e b 0 1(4x)<br>A2<br>A1<br>A<br>Seating Plane<br>**----- End of picture text -----**<br>


|**TSOT26**|**TSOT26**|**TSOT26**|**TSOT26**|
|---|---|---|---|
|**Dim**|**Min**|**Max **|**Typ**|
|**Dim**<br>**A**|**Min**<br>|**Max **<br>1.00|**Typ**<br>|
|**A1**|0.010|0.100||
|**A2**|0.840|0.900||
|**D**|2.800|3.000|2.900|
|**E**<br>**E1**|2.800BSC<br>1.500<br>1.700<br>1.600|||
|**E1**<br>**b**|1.500<br>0.300|1.700<br>0.450|1.600<br>|
|**c**|0.120|0.200||
|**e**|0.950BSC<br>SC|||
|**e1**|1.900BSC|||
|**L**|0.30|0.50||
|**L2**<br>**θ**|0.250BSC|||
|**θ**|0°|8°|4°|
|**θ1**|4°|12°||
|**All Dimensions in mm**||||



## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**TSOT26** 

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C<br>Dimensions Value (in mm)<br>C  0.950<br>Y1 X  0.700<br>Y  1.000<br>Y1  3.199<br>a<br>Y<br>X<br>000:<br>**----- End of picture text -----**<br>


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DMP2110UVTQ Document number: DS41734 Rev. 2 - 2 

October 2019 © Diodes Incorporated 

**DMP2110UVTQ** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2019, Diodes Incorporated 

**www.diodes.com** 

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DMP2110UVTQ Document number: DS41734 Rev. 2 - 2 

October 2019 © Diodes Incorporated